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| Number | Title | Issue Date |
| 8177910 | System and method for crystal growing To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucib... | 05/15/2012 |
| 7621996 | Silicon wafer and method for producing same A method for producing a silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3, interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100... | 11/24/2009 |
| 7563319 | Manufacturing method of silicon wafer An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side wafer with said buried oxide film interposed therebetween thus to fabri... | 07/21/2009 |
| 7473314 | Method for growing silicon single crystal A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the cr... | 01/06/2009 |
| 7442253 | Process for forming low defect density, ideal oxygen precipitating silicon The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and ma... | 10/28/2008 |
| 7435294 | Method for manufacturing silicon single crystal, and silicon wafer A silicon single crystal is manufactured by growing said crystal composed of a defect-free area free from the Grown-in defects by the CZ process, adding a gas of a hydrogen atom-containing substance to an atmosphere gas within a growing apparatus, and doping nitroge... | 10/14/2008 |
| 7431764 | Method for pulling up single crystal The axial temperature gradient G at the vicinity of the solid-liquid interface 24 in an ingot is calculated in consideration of the heating value of a heater 18, the dimensions and physical property values of furnace inside components and the convectio... | 10/07/2008 |
| 7431765 | Process for preparing single crystal silicon having improved gate oxide integrity A process for producing a single crystal silicon wafer comprising a front surface, a back surface, a lateral surface joining the front and back surfaces, a central axis perpendicular to the front and back surfaces, and a segment which is axially symmetric about the ... | 10/07/2008 |
| 7404856 | Nitrogen-doped silicon substantially free of oxidation induced stacking faults The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, a... | 07/29/2008 |
| 7384477 | Method for producing a single crystal and a single crystal The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the cryst... | 06/10/2008 |
| 7378071 | Silicon wafer and method for producing silicon single crystal A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silico... | 05/27/2008 |
| 7374741 | Method for growing silicon single crystal and silicon wafer In this method for growing a silicon single crystal, an ambient gas where a single crystal is grown contains a gas hydrogen-containing substance, and a silicon single crystal is grown at a pull rate to form a dislocation cluster defect occurrence region at least in ... | 05/20/2008 |
| 7368407 | High-frequency porcelain composition, process for producing the same and planar high-frequency circuit A sintering temperature can be lowered to 1,200° C. by adding from 15% by weight or more to 35% by weight or less of rutile-type titanium dioxide into forsterite. By carrying out sintering at such a low temperature, a sintered product can be obtained in which sinte... | 05/06/2008 |
| 7364618 | Silicon wafer, method for manufacturing the same and method for growing silicon single crystals This silicon wafer is obtained from a silicon single crystal grown by the CZ method in a hydrogen-containing inert gas atmosphere, and is a completely grown-in defect-free wafer containing no COPs or dislocation clusters throughout the wafer in the thickness and rad... | 04/29/2008 |
| 7361218 | Method and apparatus for fabricating a crystal fiber The present invention relates to a method for fabricating a crystal fiber having different regions of polarization inversion, comprising the following steps: (a) providing a source material; (b) putting the source material into a fabricating apparatus; and (c) formi... | 04/22/2008 |
| 7351282 | Cutting method and apparatus for ingot, wafer, and manufacturing method of solar cell Cutting method of ingot into wafers along cleavage plane. Onto surface of single crystal ingot 10 is implanted ion beam 23 to generate lattice defects in a direction defined by the crystal axes that corresponds to the cleavage plane. Cleavage is genera... | 04/01/2008 |
| 7344689 | Silicon wafer for IGBT and method for producing same A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot... | 03/18/2008 |
| 7329317 | Method for producing silicon wafer The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 an... | 02/12/2008 |
| 7326395 | Method for producing a single crystal and silicon single crystal wafer The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw ... | 02/05/2008 |
| 7326658 | Method for preparing nitrogen-doped annealed wafer and nitrogen-doped and annealed wafer The present invention provides a method for producing a nitrogen-doped annealed wafer, wherein before a wafer sliced from a silicon single crystal doped with at least nitrogen and polished is subjected to a high temperature heat treatment at 1100° C. to 1350° C. i... | 02/05/2008 |
| 7323048 | Method for producing a single crystal and a single crystal A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal which is being pulled without lowering a pulling rate V, thereby the si... | 01/29/2008 |
| 7320731 | Process for growing silicon single crystal and process for producing silicon wafer A process for growing a silicon single crystal which is capable of growing a silicon single crystal at a pulling rate which is not lower than the critical pulling rate at which an OSF-generating region will be generated is provided. Such a process for growing a sili... | 01/22/2008 |
| 7316745 | High-resistance silicon wafer and process for producing the same A high-resistance silicon wafer is manufactured, in which a gettering ability and economical efficiency is excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is to be implemented on th... | 01/08/2008 |
| 7311888 | Annealed wafer and method for manufacturing the same The present invention provides an annealed wafer which has a wafer surface layer serving as a device fabricating region and having an excellent oxide film dielectric breakdown characteristic, and a wafer bulk layer in which oxide precipitates are present at a high d... | 12/25/2007 |
| 7300517 | Manufacturing method of hydrogen-doped silicon single crystal A manufacturing method of a hydrogen-doped silicon single crystal. A silicon single crystal is grown under an inert atmosphere containing hydrogen in a CZ pulling furnace comprising a pull chamber connected to a main chamber. At least one portion of a mixed gas comp... | 11/27/2007 |
| 7294196 | Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappe... | 11/13/2007 |
| 7291220 | Process of producing silicon wafer A silicon wafer made by the Czochralski method, including a ring-shaped OSF region and having nitrogen concentration ranging from 2.9×1014 to 5.0×1015 atoms/cm3 and oxygen concentration of 1.27×1018 to 3.0×1018 | 11/06/2007 |
| 7285471 | Process for transfer of a thin layer formed in a substrate with vacancy clusters Processes for forming semiconductor structure comprising a transfer layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect to defects and resulting structures therefrom. For example, a semiconductor o... | 10/23/2007 |
| 7282094 | Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps 1 to 7, the distribution of temperatures within a singl... | 10/16/2007 |
| 7270706 | Roll crusher to produce high purity polycrystalline silicon chips A single roll crusher for comminuting high purity materials includes a roll with teeth spaced around the circumference of the roll. The roll is rotatably mounted inside a housing. The housing has a top with an entrance port, sides, and bottom with an exit port. The ... | 09/18/2007 |
| 7258744 | Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal The present invention discloses a graphite heater for producing a single crystal used when producing a single crystal by the Czochralski method which comprises at least a terminal part to which electric current is supplied and a cylindrical heat generating part by r... | 08/21/2007 |
| 7258739 | Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof Firstly, a silicon ingot in which boron and germanium were doped is sliced to prepare a silicon wafer and then the wafer is thermally processed by oxidation to form the thermal oxidation film on the surface layer portion of the wafer. Thereby, the concentration of g... | 08/21/2007 |
| 7255740 | Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements A method is described for making low-stress single crystals with a hexagonal crystal structure, which has a crystallographic c-axis perpendicular to a [0001] surface. A single crystal maintained at a temperature under the melting point of the crystal raw material is... | 08/14/2007 |
| 7244306 | Method for measuring point defect distribution of silicon single crystal ingot A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be sym... | 07/17/2007 |
| 7232484 | Method and apparatus for doping semiconductors Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles t... | 06/19/2007 |
| 7229496 | Process for producing silicon single crystal layer and silicon single crystal layer A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the tem... | 06/12/2007 |
| 7229501 | Silicon epitaxial wafer and process for manufacturing the same The present invention provides a silicon epitaxial wafer having an excellent IG capability all over the radial direction thereof and a process for manufacturing the same. The present invention is directed to a silicon epitaxial wafer having an excellent gettering ca... | 06/12/2007 |
| 7229495 | Silicon wafer and method for producing silicon single crystal A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silico... | 06/12/2007 |
| 7226507 | Method for producing single crystal and single crystal The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed ... | 06/05/2007 |
| 7226505 | Method for vanishing defects in single crystal silicon and single crystal silicon A method for eliminating defects in single crystal silicon, which comprises subjecting single crystal silicon prepared by the CZ method to an oxidation treatment and then to an ultra high temperature heat treatment at a temperature of at least 1300° C., or comprise... | 06/05/2007 |
