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| Number | Title | Issue Date |
| 8337614 | GaN single crystal substrate and method for processing surface of GaN single crystal substrate The surface of a gallium nitride single crystal substrate is processed, e.g., comprising steps by planarizing the top side and the bottom side of a gallium nitride original substrate positioned on a support bed; radiating light having wavelengths ranging from 370 to... | 12/25/2012 |
| 8287642 | Devices and methods for providing stimulated raman lasing Devices and methods for providing stimulated Raman lasing are provided. In some embodiments, devices include a photonic crystal that includes a layer of silicon having a lattice of holes and a linear defect that forms a waveguide configured to receive pump light and... | 10/16/2012 |
| 8197594 | Silicon wafer for semiconductor and manufacturing method thereof Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions ≧20 μm below the wafer surface in the range of 5×1011/cm3, and a density of BMDs with sizes of ≧300 nm≦1×107/cm3, exhibit reduced... | 06/12/2012 |
| 8110041 | Coloured diamond A method of producing a single crystal CVD diamond of a desired color which includes the steps of providing single crystal CVD diamond which is colored and heat treating the diamond under conditions suitable to produce the desired color. Colors which may be produced... | 02/07/2012 |
| 8105434 | Si ribbon, SiO2 ribbon and ultra pure ribbons of other substances A method of purifying substances is described herein, particularly suitable for purifying silica and forming it into silicon oxide sheets or ribbons, or silicon sheets or ribbons. The method includes ion sweeping a sheet of a substance containing ionic impurities by... | 01/31/2012 |
| 8048220 | Method for producing a strained layer on a substrate and layered structure The invention relates to a method for producing a strained layer. Said method comprises the following steps: placing the layer on a substrate and straining it, structuring the strained layer, relaxing the layer, producing directional off-sets in the layer to be stra... | 11/01/2011 |
| 7993452 | Method of manufacturing epitaxial silicon wafer A role of a bottom face of a silicon wafer is identified in a manufacturing process of the silicon wafer. And preferable characteristic feature is also identified. In order to obtain the above characteristic feature, a process method to be implemented into the metho... | 08/09/2011 |
| 7972437 | Hollow nanocrystals and method of making Described herein are hollow nanocrystals having various shapes that can be produced by a simple chemical process. The hollow nanocrystals described herein may have a shell as thin as 0.5 nm and outside diameters that can be controlled by the process of making. ... | 07/05/2011 |
| 7892354 | Process for the parallel detection of crystalline forms of molecular solids A process for the detection of polymorphic or pseudopolymorphic forms of solid, molecular and crystallizing compounds, or of molecular, cocrystalline compounds or of solid solutions which consist of at least two solid, molecular and crystallizing compounds, in a ser... | 02/22/2011 |
| 7837789 | Method of SiC single crystal growth and SiC single crystal A method of epitaxial growth of a 4H—SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical growth rate, comprising growing a 4H—SiC single crystal on a 4H—SiC... | 11/23/2010 |
| 7758695 | Method for fabricating metal substrates with high-quality surfaces One embodiment of the present invention provides a method for fabricating a high-quality metal substrate. During operation, the method involves cleaning a polished single-crystal substrate. A metal structure of a predetermined thickness is then formed on a polished ... | 07/20/2010 |
| 7754008 | Method of forming dislocation-free strained thin films A method of forming a stressed thin film on a substrate includes forming a plurality of islands on a viscous layer that is present on a surface of a substrate. Adjacent islands are bridged with a stressor layer. The structure is annealed at an elevated temperature a... | 07/13/2010 |
| 7628853 | Lithium tantalate substrate and process for its manufacture A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept ... | 12/08/2009 |
| 7442250 | Lithium tantalate substrate and method for producing same A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept ... | 10/28/2008 |
| 7438762 | Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of t... | 10/21/2008 |
| 7431764 | Method for pulling up single crystal The axial temperature gradient G at the vicinity of the solid-liquid interface 24 in an ingot is calculated in consideration of the heating value of a heater 18, the dimensions and physical property values of furnace inside components and the convectio... | 10/07/2008 |
| 7419547 | Method for marking a crystalline material using cathodoluminescence In a first exemplary embodiment of the present invention, a method is provided for marking a sample of a doped crystalline material. According to a feature of the present invention, the method comprises the steps of causing a controlled alteration to the crystalline... | 09/02/2008 |
| 7396404 | Methods for forming alkali halide ingots into rectangular plates The present disclosure provides methods for forging cylindrical alkali halide melt-grown single-crystal-type ingots into rectangular blocks. The resulting rectangular blocks are devoid of peripheral cracks and fissures, and possess uniform properties and reduced lev... | 07/08/2008 |
| 7397110 | High resistance silicon wafer and its manufacturing method A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is i... | 07/08/2008 |
| 7390359 | Nitride semiconductor wafer A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconducto... | 06/24/2008 |
| 7381265 | Method for crystallization of a weakly acidic and/or weakly basic compound A method for crystallization of a weakly acidic and/or weakly basic compound having an uncharged form and at least one charged form comprises the steps of: a) providing a solution of said compound in a solvent having an initial pH-... | 06/03/2008 |
| 7374612 | Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal A method of producing a lithium-tantalate crystal comprising, at least subjecting a single-polarized lithium-tantalate crystal wherein an optical absorption coefficient at a wave number of 3480 cm−1 is 0.3 cm−1 or less to a heat treatment u... | 05/20/2008 |
| 7367865 | Methods for making wafers with low-defect surfaces, wafers obtained thereby and electronic components made from the wafers The electronic semiconductor component has a crystalline wafer substrate with an active surface and a semiconductor layer coating the active surface. So that the semiconductor layer has a few surface defects the crystalline wafer substrate is a sapphire or silicon c... | 05/06/2008 |
| 7364715 | As-grown single crystal of alkaline earth metal fluoride A single crystal of alkaline earth metal fluoride is produced by a single crystal pulling method, has a straight barrel part diameter of not less than 17 cm, preferably has a straight barrel part length of not less than 5 cm, and has a light transmittance, as measur... | 04/29/2008 |
| 7364616 | Wafer demounting method, wafer demounting device, and wafer demounting and transferring machine It is an object of the present invention to provide a wafer release method capable of releasing a wafer safely, simply and certainly and improving a wafer releasing rate, a wafer release apparatus and a wafer release transfer machine using the wafer release apparatu... | 04/29/2008 |
| 7361217 | Method for crystallising a melamine melt Method for crystallizing a melamine melt to form melamine particles with a D90 of at most 2 mm by cooling a melamine melt to below the crystallization temperature of the melamine, comprising the formation of a suspension of melamine particles in the cooli... | 04/22/2008 |
| 7357835 | Production of crystalline materials by using high intensity ultrasound A crystalline material sufficiently pure for use in pharmaceuticals may be made by forming a saturated solution of the material, changing the temperature of the solution so it becomes supersaturated, and subjecting the solution to irradiation by high intensity ultra... | 04/15/2008 |
| 7356229 | Reflective polarizers containing polymer fibers A polarizer is formed with an arrangement of polymer fibers substantially parallel within a polymer matrix. The polymer fibers are formed of at least first and second polymer materials. At least one of the polymer matrix and the first and second polymer materials is... | 04/08/2008 |
| 7348612 | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a MESFET having a source region, a drain region and a gate contact. The gate contact is disposed between the source region and ... | 03/25/2008 |
| 7341774 | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films An electronic or opto-electronic device or a chemical sensor comprising: an interpenetrating network of a nanostructured high surface area to volume ratio film material and an organic/inorganic material forming a nanocomposite. The high surface area to volume film m... | 03/11/2008 |
| 7342995 | Apparatus for estimating specific polymer crystal A specific macromolecule crystal evaluating device according to the present invention is equipped with a sample detecting stage for detecting a protein crystal in a sample container, an X-ray measuring stage that is spaced from the sample detecting stage and carries... | 03/11/2008 |
| 7341628 | Method to reduce crystal defects particularly in group III-nitride layers and substrates Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium ... | 03/11/2008 |
| 7335258 | Functionalization and separation of nanotubes and structures formed thereby Methods of forming a microelectronic structure are described. Embodiments of those methods include attaching at least one functional group to a chondroitin sulfate molecule, and then attaching the at least one functional group to a carbon nanotube, wherein the carbo... | 02/26/2008 |
| 7332030 | Method of treating a part in order to alter at least one of the properties thereof Process for the treatment of a component, at least one zone to be treated of which located in the depth of this component at a certain distance from the surface thereof, has at least one property that can be modified when this zone is subjected to a thermal energy d... | 02/19/2008 |
| 7332028 | Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon The invention relates to the handling of a composition comprising a rare-earth halide, especially within the context of the growth of crystals from said composition, said crystals generally being of formula AeLnfX(3f+e) in which Ln r... | 02/19/2008 |
| 7329318 | Methods of crystal precipitation Crystals of paroxetine hydrochloride ½-hydrate are allowed to separate out by adding water to a solution or suspension comprising paroxetine hydrochloride and a polar organic solvent which contains no water or at most 60% by weight of water to adjust the water cont... | 02/12/2008 |
| 7329316 | Manufacturing method for QPM wavelength converter elements, QPM wavelength converter element, and medical laser apparatus using it A manufacturing method for quasi phase matching (QPM) wavelength converter elements using crystal quartz as a base material in which twins are periodically induced, comprises a step of periodically inducing the twins by applying a stress onto a crystal quartz substr... | 02/12/2008 |
| 7329874 | LuI:Ce-a scintillator for gamma-ray spectroscopy and time-of-flight pet The present invention includes very fast scintillator materials including lutetium iodide doped with Cerium (Lu1-xI3:Cex; LuI3:Ce). The LuI3 scintillator material has surprisingly good characteristics including ... | 02/12/2008 |
| 7329590 | Method for depositing nanolaminate thin films on sensitive surfaces The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is redu... | 02/12/2008 |
| 7326785 | Pyrrolidine derivatives as factor XA inhibitors The invention relates to compounds of formula (I) processes for their preparation, pharmaceutical compositions containing them and to their use in medicine, particularly use in the amelioration of a clinical cond... | 02/05/2008 |
