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| Number | Title | Issue Date |
| 8123855 | Device and process for growing Ga-doped single silicon crystals suitable for making solar cells A device and method for producing Ga doped silicone single crystal with a diameter between 150 and 165 mm and a narrow resistivity distribution range (from 3 Ω·cm to 0.5 Ω·cm). The device is characterized by the use of a shorter heater and a funnel shaped gas fl... | 02/28/2012 |
| 7909930 | Method for producing a silicon single crystal and a silicon single crystal A method for producing a silicon single crystal by the Czochralski method with carbon-doping comprising: charging a polycrystalline silicon material and any one of a carbon dopant selected from the group consisting of an organic compound, an organic compound and a s... | 03/22/2011 |
| 7842133 | Single crystal growing method In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted ... | 11/30/2010 |
| 7744696 | Method for preparing borate-based crystal and laser oscillation apparatus A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water t... | 06/29/2010 |
| 7641734 | Method for producing silicon single crystal A method of growing silicon single crystals with a [110] crystallographic axis orientation by the Czochralski method is provided according to which a silicon seed crystal doped with a high concentration of boron is used and an included angle of a conical part during... | 01/05/2010 |
| 7470323 | Process for producing p-doped and epitaxially coated semiconductor wafers from silicon The Czochralski method is used for producing p−-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus ob... | 12/30/2008 |
| 7442253 | Process for forming low defect density, ideal oxygen precipitating silicon The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and ma... | 10/28/2008 |
| 7435294 | Method for manufacturing silicon single crystal, and silicon wafer A silicon single crystal is manufactured by growing said crystal composed of a defect-free area free from the Grown-in defects by the CZ process, adding a gas of a hydrogen atom-containing substance to an atmosphere gas within a growing apparatus, and doping nitroge... | 10/14/2008 |
| 7431765 | Process for preparing single crystal silicon having improved gate oxide integrity A process for producing a single crystal silicon wafer comprising a front surface, a back surface, a lateral surface joining the front and back surfaces, a central axis perpendicular to the front and back surfaces, and a segment which is axially symmetric about the ... | 10/07/2008 |
| 7404856 | Nitrogen-doped silicon substantially free of oxidation induced stacking faults The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, a... | 07/29/2008 |
| 7399428 | Compositions comprising high light-output yellow phosphors and their methods of preparation Embodiments of the present invention are directed to compositions and processing methods of rare-earth vanadate based materials that have high emission efficiency in a wavelength range of 480 to 700 nm with the maximum intensity at 535 nm (bright yellow) under UV, X... | 07/15/2008 |
| 7384477 | Method for producing a single crystal and a single crystal The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the cryst... | 06/10/2008 |
| 7378071 | Silicon wafer and method for producing silicon single crystal A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silico... | 05/27/2008 |
| 7374741 | Method for growing silicon single crystal and silicon wafer In this method for growing a silicon single crystal, an ambient gas where a single crystal is grown contains a gas hydrogen-containing substance, and a silicon single crystal is grown at a pull rate to form a dislocation cluster defect occurrence region at least in ... | 05/20/2008 |
| 7364618 | Silicon wafer, method for manufacturing the same and method for growing silicon single crystals This silicon wafer is obtained from a silicon single crystal grown by the CZ method in a hydrogen-containing inert gas atmosphere, and is a completely grown-in defect-free wafer containing no COPs or dislocation clusters throughout the wafer in the thickness and rad... | 04/29/2008 |
| 7361218 | Method and apparatus for fabricating a crystal fiber The present invention relates to a method for fabricating a crystal fiber having different regions of polarization inversion, comprising the following steps: (a) providing a source material; (b) putting the source material into a fabricating apparatus; and (c) formi... | 04/22/2008 |
| 7344689 | Silicon wafer for IGBT and method for producing same A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot... | 03/18/2008 |
| 7341787 | Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to... | 03/11/2008 |
| 7329317 | Method for producing silicon wafer The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 an... | 02/12/2008 |
| 7326395 | Method for producing a single crystal and silicon single crystal wafer The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw ... | 02/05/2008 |
| 7323048 | Method for producing a single crystal and a single crystal A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal which is being pulled without lowering a pulling rate V, thereby the si... | 01/29/2008 |
| 7320731 | Process for growing silicon single crystal and process for producing silicon wafer A process for growing a silicon single crystal which is capable of growing a silicon single crystal at a pulling rate which is not lower than the critical pulling rate at which an OSF-generating region will be generated is provided. Such a process for growing a sili... | 01/22/2008 |
| 7316745 | High-resistance silicon wafer and process for producing the same A high-resistance silicon wafer is manufactured, in which a gettering ability and economical efficiency is excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is to be implemented on th... | 01/08/2008 |
| 7311888 | Annealed wafer and method for manufacturing the same The present invention provides an annealed wafer which has a wafer surface layer serving as a device fabricating region and having an excellent oxide film dielectric breakdown characteristic, and a wafer bulk layer in which oxide precipitates are present at a high d... | 12/25/2007 |
| 7309393 | High resistivity aluminum antimonide radiation detector Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection. ... | 12/18/2007 |
| 7300517 | Manufacturing method of hydrogen-doped silicon single crystal A manufacturing method of a hydrogen-doped silicon single crystal. A silicon single crystal is grown under an inert atmosphere containing hydrogen in a CZ pulling furnace comprising a pull chamber connected to a main chamber. At least one portion of a mixed gas comp... | 11/27/2007 |
| 7294196 | Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappe... | 11/13/2007 |
| 7291225 | Heat shield and crystal growth equipment A heat shield and a crystal growth equipment are provided, in which the length-adjustable and hybrid-angle heat shield is provided for the crystal growth equipments. The heat shield is adapted for not only guiding the inert gas flow but also speeding up the flow rat... | 11/06/2007 |
| 7291220 | Process of producing silicon wafer A silicon wafer made by the Czochralski method, including a ring-shaped OSF region and having nitrogen concentration ranging from 2.9×1014 to 5.0×1015 atoms/cm3 and oxygen concentration of 1.27×1018 to 3.0×1018 | 11/06/2007 |
| 7273647 | Silicon annealed wafer and silicon epitaxial wafer A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material wafer having nitrogen at a concentration of less than 1×1014 | 09/25/2007 |
| 7270706 | Roll crusher to produce high purity polycrystalline silicon chips A single roll crusher for comminuting high purity materials includes a roll with teeth spaced around the circumference of the roll. The roll is rotatably mounted inside a housing. The housing has a top with an entrance port, sides, and bottom with an exit port. The ... | 09/18/2007 |
| 7258739 | Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof Firstly, a silicon ingot in which boron and germanium were doped is sliced to prepare a silicon wafer and then the wafer is thermally processed by oxidation to form the thermal oxidation film on the surface layer portion of the wafer. Thereby, the concentration of g... | 08/21/2007 |
| 7258744 | Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal The present invention discloses a graphite heater for producing a single crystal used when producing a single crystal by the Czochralski method which comprises at least a terminal part to which electric current is supplied and a cylindrical heat generating part by r... | 08/21/2007 |
| 7255740 | Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements A method is described for making low-stress single crystals with a hexagonal crystal structure, which has a crystallographic c-axis perpendicular to a [0001] surface. A single crystal maintained at a temperature under the melting point of the crystal raw material is... | 08/14/2007 |
| 7235863 | Silicon wafer and process for producing it A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs... | 06/26/2007 |
| 7232484 | Method and apparatus for doping semiconductors Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles t... | 06/19/2007 |
| 7233031 | Vertical power semiconductor component A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the ... | 06/19/2007 |
| 7229495 | Silicon wafer and method for producing silicon single crystal A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silico... | 06/12/2007 |
| 7229496 | Process for producing silicon single crystal layer and silicon single crystal layer A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the tem... | 06/12/2007 |
| 7226508 | Quartz glass crucible and method for the production thereof A known quartz glass crucible for crystal pulling consists of a crucible wall, having an outer layer which is provided in an external area thereof with a crystallisation promoter which results in crystallisation of quartz glass, forming cristobalite when the quartz ... | 06/05/2007 |
