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| Number | Title | Issue Date |
| 7867334 | Silicon casting apparatus and method of producing silicon ingot A silicon casting apparatus for producing polycrystal silicon ingot by heating a silicon melt (8) held in a mold (4) from above by a heater (3) and cooling it from below while changing the heat exchange area of a heat exchange region (HE), defin... | 01/11/2011 |
| 7749324 | Casting method of silicon ingot and cutting method of the same The present invention includes a method for casting a silicon ingot by using a continuous casting method by means of an electromagnetic induction, and a method for cutting the silicon ingot as a starting material into plural silicon blocks. When the silicon blocks w... | 07/06/2010 |
| 7591895 | Method and apparatus for producing crystals A method and an apparatus for producing crystals wherein crystal quality can be kept and a crystal composition is uniformed from a growth early stage to a growth last stage are provided. In an apparatus for producing crystals wherein the crystals 13 are grown... | 09/22/2009 |
| 7413605 | Method for manufacturing silicon single crystal By pulling up an ingot in consideration of deformation of a crucible, generation of the defective ingot is prevented and a plurality of ingots having equivalent quality with the first ingot are pulled up in a multiple pull-up. Firstly, a deformation amount of a cruc... | 08/19/2008 |
| 7399360 | Crucible and method of growing single crystal by using crucible Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of ... | 07/15/2008 |
| 7381392 | Silicon feedstock for solar cells The present invention relates to silicon feedstock for producing directionally solidified silicon ingots, thin sheets and ribbons for the production of silicon wafers for PV solar cells where the silicon feedstock contains between 0.2 and 10 ppma boron and between 0... | 06/03/2008 |
| 7344594 | Melter assembly and method for charging a crystal forming apparatus with molten source material A method of charging a crystal forming apparatus with molten source material is provided. The method includes the steps of positioning a melter assembly relative to the crystal forming apparatus for delivering molten silicon to a crucible of the apparatus. An upper ... | 03/18/2008 |
| 7336692 | Induction furnace for melting semi-conductor materials An induction furnace includes an induction coil, an electrically non-conductive crucible having an inner diameter disposed within the induction coil, and an electrically conductive member disposed below the crucible and having an outer diameter which is further from... | 02/26/2008 |
| 7326297 | Device for the production of crystal rods having a defined cross-section and column-shaped polycrystallization structure by means of floating-zone continuous crystallization The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material,... | 02/05/2008 |
| 7323047 | Method for manufacturing granular silicon crystal In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during fal... | 01/29/2008 |
| 7318916 | Semiconductive GaAs wafer and method of making the same A semiconductive GaAs wafer has a diameter of 4 inches or more, and an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less. A semiconductive GaAs wafer is made by growing a GaAs single crystal under a temperature gr... | 01/15/2008 |
| 7311772 | Apparatus and method for supplying raw material in Czochralski method Means for supplying raw material in additional charging or recharging of solid granular raw material into molten material in the crucible, comprises a raw material supply tube to be filled with said material, a metallic support member which runs through the inside o... | 12/25/2007 |
| 7232484 | Method and apparatus for doping semiconductors Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles t... | 06/19/2007 |
| 7229494 | Production method for compound semiconductor single crystal A method for producing a compound semiconductor single crystal by a liquid encapsulated Czochralski method, including containing a semiconductor raw material and an encapsulating material in a raw material melt-containing portion having a first crucible having a bot... | 06/12/2007 |
| 7220308 | Manufacturing method of high resistivity silicon single crystal To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high r... | 05/22/2007 |
| 7193701 | Gray optical standard A system for providing and using a gray optical standard is disclosed, the standard generally comprising a housing having a cavity and an at least partially transparent portion adjacent to the cavity for receiving the radiation emitted radiation by an optical instru... | 03/20/2007 |
| 7135069 | Coating silicon pellets with dopant for addition of dopant in crystal growth An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, and (2) heating the solution so as to evaporate water and form a polymerized polyvinyl alcohol c... | 11/14/2006 |
| 7122082 | Silicon wafer and manufacturing method thereof A silicon wafer wherein stacking fault (SF) nuclei are distributed throughout the entire in-plane direction, and the density of the stacking fault nuclei is set to a range of between 0.5×108 cm−3 and 1×1011 cm−3.... | 10/17/2006 |
| 7113535 | Induction furnace for melting granular materials A continuous- or intermittent-melt induction furnace useful for heating and/or melting semi-conductor or other materials includes an induction coil, a susceptor switchable between open and closed electric circuit modes, and a crucible. The susceptor is inductively o... | 09/26/2006 |
| 7105204 | Apparatus and method for coating the exterior surface of a pipe The exterior surface of a pipe is coated around its full perimeter without rotation of the pipe or the complete coating apparatus. In one example, the coating apparatus includes coating heads attached to a rotor with the coating material supplied under positive air ... | 09/12/2006 |
| 7074466 | Beverage and food containers, inwardly directed foam Beverage or food containers made from sheet material, and methods of making such containers. Such container comprises a layer of paperboard and an expanded foam layer applied as a coating in a liquid carrier, and affixed to a paperboard base layer. The expanded foam... | 07/11/2006 |
| 7052547 | Apparatus for supplying raw material In single crystal growth by means of a CZ method, a granular/lump polycrystalline raw material is additionally supplied into a raw material melt in a crucible through a vertical charging tube. A raw material accumulating section is provided at a site part way downwa... | 05/30/2006 |
| 7014704 | Method for growing silicon single crystal A method for growing a silicon single crystal used for semiconductor integrated circuit devices, wherein the single crystal is grown by the CZ method at a nitrogen concentration of 1×1013 atoms/cm3–1×1015 atoms/cm3 wit... | 03/21/2006 |
| 7001455 | Method and apparatus for doping semiconductors Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles t... | 02/21/2006 |
| 6984263 | Shallow melt apparatus for semicontinuous czochralski crystal growth In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible... | 01/10/2006 |
| 6916371 | Apparatus for growing stoichiometric lithium niobate and lithium tantalate single crystals and method of growing the same A method for growing stoichiometric lithium niobate and lithium tantalate single crystals is provided. A crystal growing apparatus that includes a long crucible with a separation member therein is used. A solid feed material is quenched from a molten state, solidifi... | 07/12/2005 |
| 6908509 | CZ raw material supply method Additional charge of a solid raw material 13 in the shapes of granules/lumps, low in raw material cost, and with no risk of cracking, is performed into a molten raw material 14 in a crucible in a static manner without solidifying a surface of the molte... | 06/21/2005 |
| 6843849 | Method and apparatus for growing high quality single crystal In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2 | 01/18/2005 |
| 6740158 | Process for coating silicon shot with dopant for addition of dopant in crystal growth An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in a boron dopant spin-on solution comprising a borosilicate, a polymer precursor, and a volatile solvent, and (2) removing the solvent so as to leave a polymeric coa... | 05/25/2004 |
| 6613653 | Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatu... | 09/02/2003 |
| 6605149 | Method of stacking polycrystalline silicon in process for single crystal production A process forms a single crystal silicon ingot from varying sized pieces of polycrystalline silicon source material according to the Czochralski method. The process comprises placing into a crucible on the bottom a generally polygonal-shaped concentric ar... | 08/12/2003 |
| 6464777 | Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal A stoichiometric single crystal of lithium niobate or lithium tantalate is produced by pulling a single crystal of lithium niobate or lithium tantalate having a molar fraction of Li2 O/(Nb2 O5 +Li2 O) or Li... | 10/15/2002 |
| 6447602 | Crystal growth apparatus and method Crystal growth apparatus comprising a crucible for containing a supply of molten material from which the crystal may be grown and first reflection means for receiving radiation directed along an input path and reflecting radiation towards second reflectio... | 09/10/2002 |
| 6361597 | Single crystal material auxiliary melting apparatus and single crystal material melting method The present invention aims to improve thermal efficiency and to reduce melting time when a raw material in an auxiliary crucible is heated and melted by induction heating method. When an initial raw material 30a is at low temperature and its conductivity ... | 03/26/2002 |
| 6277192 | Crystal pulling unit A crystal pulling unit for the production of a crystal block has a recharging tube (7), via which granulate (17) enters into a crucible (2) with a melt (3), located within a container (1). This recharging tube (7) has an annular space (20) between an inne... | 08/21/2001 |
| 6231669 | Crystal pulling unit A crystal pulling unit for the production of a crystal block has a recharging tube (7), via which granulate (17) is introduced into a crucible (2) with a melt (3), located inside a container (1). A fine-dust separator (8) is located in the recharging tube... | 05/15/2001 |
| 6110272 | Method for producing silicon single crystal A method of loading a crucible, comprises loading at least one polycrystalline silicon rod into the crucible. Lump and/or granular polycrystalline silicon may also be loaded into the crucible. Especially when loaded into the crucible in a close-packed pyr... | 08/29/2000 |
| 6106617 | Apparatus for feeding raw material into a quartz crucible A method of an apparatus for automatically and rapidly feeding raw material into a quartz crucible in manufacture of single-crystal silicon by CZ method. After a draining hose 203 is disposed in a quartz crucible 201, pure water is supplied from a water s... | 08/22/2000 |
| 6077345 | Silicon crystal growth melt level control system and method The amount of silicon feed material supplied to a silicon melt furnace in a silicon crystal web growing installation is controlled by providing a melt level reference signal, generating a melt level signal representative of the level of the molten silicon... | 06/20/2000 |
| 6027563 | Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber For the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber (9, 41) with a cooling body (11), which can be lowered relative to the chamber, the flat bottom surface of a seed body (25) of solid silicon is laid... | 02/22/2000 |
