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| Number | Title | Issue Date |
| 7442251 | Method for producing silicon single crystals and silicon single crystal produced thereby This method for producing silicon single crystals includes: growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a cooling member which circumferentially surrounds the silicon single c... | 10/28/2008 |
| 7364782 | Flocked transfer and article of manufacture including the application of the transfer by thermoplastic polymer film A flocked transfer is produced by applying a release agent to a release sheet, and then applying the flocking to a release agent. Unlike the traditional method, a binder and thermoplastic hot melt film is applied to the back of the flock. The transfer, which is esse... | 04/29/2008 |
| 7362049 | Blue-enriched incandescent lamp A blue-enriched incandescent lamp having on the interior surface of its light transmissive glass envelope a coating in accordance with an aspect of the invention. The coating contains a phosphor that is energized by the ultraviolet/violet emission ( | 04/22/2008 |
| 7351368 | Flocked articles and methods of making same A method of manufacturing a molded article using lamination of a flocked surface onto a backing film is provided. Also provided is a flocked article comprising an antimicrobial agent. ... | 04/01/2008 |
| 7318916 | Semiconductive GaAs wafer and method of making the same A semiconductive GaAs wafer has a diameter of 4 inches or more, and an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less. A semiconductive GaAs wafer is made by growing a GaAs single crystal under a temperature gr... | 01/15/2008 |
| 7282094 | Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps 1 to 7, the distribution of temperatures within a singl... | 10/16/2007 |
| 7276085 | Methods of treating and cleaning fibers, carpet yarns and carpets Methods of enhancing stain resistance of fibers, carpet yarns and carpets are disclosed. In one aspect, the invention relates to a method of treating fiber, yarn or carpet comprising applying an aqueous treating composition to fiber, yarn or carpet, wherein the aque... | 10/02/2007 |
| 7263162 | Sample mounts for microcrystal crystallography Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surfac... | 08/28/2007 |
| 7235863 | Silicon wafer and process for producing it A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs... | 06/26/2007 |
| 7229494 | Production method for compound semiconductor single crystal A method for producing a compound semiconductor single crystal by a liquid encapsulated Czochralski method, including containing a semiconductor raw material and an encapsulating material in a raw material melt-containing portion having a first crucible having a bot... | 06/12/2007 |
| 7195669 | Method of producing silicon monocrystal A silicon single crystal rod (24) is pulled from a silicon melt (13) made molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal r... | 03/27/2007 |
| 7192620 | Mold-release coating systems A mold-release coating system includes a barrier coating of a substantially liquid wax material. The wax material is deposited onto the mold surface. The wax material includes about 7 to about 10 weight percent solids. The wax material is permitted to substantially ... | 03/20/2007 |
| 7191568 | Modular safety surface and method for preparing the same A modular safety unit having a skid resistant surface for use in a location where it is desirable to add a skid resistant surface for traction comprising a base made of resin, the base having a top side and a bottom side; an aggregate made from calcined bauxite, and... | 03/20/2007 |
| 7175707 | P-type GaAs single crystal and its production method A p-type GaAs single crystal containing Si, Zn, B and In as dopants has an average dislocation density of 100 cm−2 or less. It may be produced by cooling a GaAs melt containing Si, Zn, B and In as dopants in a crystal-growing container having a seed cry... | 02/13/2007 |
| 7161110 | Melting and vaporizing apparatus and method An apparatus and method for heating materials or substances in an oven at an oven temperature below their melting and/or vaporization points to either melt and/or vaporize the substance. Substances are inserted into a substantially spherical envelope. The envelope i... | 01/09/2007 |
| 7147894 | Method for assembling nano objects A method for the self assembly of a macroscopic structure with a pre-formed nano object is provided. The method includes processing a nano object to a desired aspect ratio and chemical functionality and mixing the processed nano object with a solvent to form a suspe... | 12/12/2006 |
| 7141113 | Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer A method for growing a silicon crystal by a Czochralsky method, wherein, let a pulling speed be V (mm/min) and an average value of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., be G (... | 11/28/2006 |
| 7132091 | Single crystal silicon ingot having a high arsenic concentration A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 Ω·cm. ... | 11/07/2006 |
| 7122082 | Silicon wafer and manufacturing method thereof A silicon wafer wherein stacking fault (SF) nuclei are distributed throughout the entire in-plane direction, and the density of the stacking fault nuclei is set to a range of between 0.5×108 cm−3 and 1×1011 cm−3.... | 10/17/2006 |
| 7097897 | Powder coated strap and method for making same A corrosion-resistant coated strap is formed from an elongated metal strap base element having a width and a thickness and defining first and second sides and a pair of edge regions. A coating is applied and cured onto the base element. The coating has a substantial... | 08/29/2006 |
| 7014883 | Apparatus and method for forming a composite structure A method for forming a composite structure is disclosed. The method includes four steps. Step one calls for applying a primer (104) to a surface (102) of a tool (100). Step two requires applying a coating (106) to primer (104). Ste... | 03/21/2006 |
| 6977023 | Screen printed resin film applique or transfer made from liquid plastic dispersion The present invention is directed to the use of a resin dispersion to form a variety of decorative transfers. The transfers can include a decorative medium such as flock. Primary and secondary carriers are used in some embodiments of the invention. The resin dispers... | 12/20/2005 |
| 6947651 | Optical waveguides formed from nano air-gap inter-layer dielectric materials and methods of fabrication thereof Waveguides and methods of fabrication thereof are presented. A representative waveguide includes a waveguide core and a cladding layer, where the cladding layer surrounds the waveguide core. The waveguide core and cladding can be made of a host material having a plu... | 09/20/2005 |
| 6929771 | Method of decorating a molded article A method of providing a molding article with a plush surface is provided. The method includes providing a flocked transfer, securing the transfer in place in a mold, and molding the article such that the transfer is embedded in the surface of the article. The articl... | 08/16/2005 |
| 6849119 | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and back surfaces.... | 02/01/2005 |
| 6800132 | Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer A method for producing a silicon ingot through pulling up a silicon single crystal according to the Czochralski method, wherein the silicon single crystal is pulled up while being doped with nitrogen in such a condition as to form a part having a nitrogen content of... | 10/05/2004 |
| 6752976 | Inp single crystal substrate By using an InP single crystal substrate of the present invention in which the oxygen atom concentration is within the range of 1×1017 to 1×1018 atoms/cm3 for vapor phase epitaxial growth such as the MOCVD method, the occurrence of... | 06/22/2004 |
| 6312517 | Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method A method of lowering the resistivity of resultant silicon crystal from a Czochralski crystal growing process by adding arsenic dopant to the melt in multiple stages.... | 11/06/2001 |
| 6019841 | Method and apparatus for synthesis and growth of semiconductor crystals The invention is an improved method and apparatus for growing crystals that incorporates an isolation valve between the growth and injection chambers to allow the growth chamber to be maintained at operating temperature and pressure while decoupling the i... | 02/01/2000 |
| 5986288 | Epitaxial wafer for a light-emitting diode and a light-emitting diode An epitaxial wafer for a light-emitting diode includes an n-type GaP single-crystal substrate, and at least an n-type semiconductor epitaxial layer and a p-type semiconductor epitaxial layer formed on the substrate. The substrate has a boron concentration... | 11/16/1999 |
| 5814148 | Method for preparing molten silicon melt from polycrystalline silicon charge A process for preparing a molten silicon melt from polycrystalline silicon for use in producing single crystal silicon by the Czochralski method is disclosed. Granular and chunk polycrystalline silicon are loaded into a Czochralski crucible as a mixed cha... | 09/29/1998 |
| 5733805 | Method of fabricating semiconductor device utilizing a GaAs single crystal By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, ther... | 03/31/1998 |
| 5567505 | Means and method of applying a plastic finishing layer to the surface of a composite article; coated composite article Means for applying a plastic finishing layer to the surface of a composite article comprising an extruded plastic-based solid body reinforced by one or more bundles of reinforcing fibers, these bundles being affixed to its surface, comprising a ring (1), ... | 10/22/1996 |
| 5524571 | Method for synthesizing compound semiconductor polycrystals and apparatus therefor Herein disclosed are apparatuses for manufacturing compound semiconductor polycrystals comprising a pressure vessel, an upper shaft, a container for a first component fixed to the upper shaft, a heater around the container, a lower shaft, a susceptor and ... | 06/11/1996 |
| 5515810 | Method and apparatus for manufacturing semi-insulation GaAs monocrystal To manufacture a low-carbon concentration GaAs wafer required for devices such as hall sensors, FETs, HEMTs etc. at a high production yield without deteriorating the semi-insulation characteristics thereof, a method of manufacturing a semi-insulation GaAs... | 05/14/1996 |
| 5487354 | Method for pulling a silicon single crystal A method for pulling a silicon single crystal has the single crystal being pulled at a speed defined as maximum pulling speed in the vertical direction with respect to a silicon melt held in a crucible. The value of the maximum pulling speed is approximat... | 01/30/1996 |
| 5477806 | Method of producing silison single crystal A solid layer is melted from the upper part thereof by the heat of a heater while the contact area between a molten liquid layer and an inner wall of a crucible is adjusted in a Double Layered CZ method, so that the eluting amount of oxygen from the cruci... | 12/26/1995 |
| 5431125 | Twin-free crystal growth of III-V semiconductor material Twin-free (100) InP crystals of large dimensions and having flat crowns are produced by combining the magnetic liquid encapsulated Kyropoulos (MLEK) process and the magnetic liquid encapsulated Czochralski (MLEC) process. Observation of the flat crown by ... | 07/11/1995 |
| 5429067 | Czochralski method using a member for intercepting radiation from a raw material molten solution A Czochralski method using radiation intercepting members (1, 9) is used for manufacturing a single crystal such as compound semiconductors with a high production yield using a material having a low thermal conductivity or with a small temperature gradien... | 07/04/1995 |
| 5415125 | Method of forming a semiconductor boule A method of forming a semiconductor boule comprises the steps of providing a chamber having a crucible therein; introducing a first material and a second material into the crucible, the second material overlying the first material; heating the crucible to... | 05/16/1995 |
