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...Daniel Webster invented a "bull plow" to pull out tree stumps. It didn't catch on because it was huge and required four oxen to pull it!
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| Number | Title | Issue Date |
| 7918934 | Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconducto... | 04/05/2011 |
| 7637997 | Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal A silicon single crystal is grown by the CZ method. A silicon melt from which the crystal is grown is added with dopant such that the crystal has a resistivity of 0.025 to 0.08 Ωcm. As well as the dopant, carbon is added to the silicon melt. The crystal is pulled i... | 12/29/2009 |
| 7608145 | Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby Disclosed is a method of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon mel... | 10/27/2009 |
| 7582160 | Silicone single crystal production process In silicon single crystal growth by the Czochralski method using a quartz crucible, a silicon single crystals with a uniform distribution of oxygen concentration can be produced in high yield without being affected by changes of crystal diameter and initial amount o... | 09/01/2009 |
| 7476274 | Method and apparatus for making a highly uniform low-stress single crystal by drawing from a melt and uses of said crystal The method provides a uniform low-stress single crystal in a predetermined crystal orientation. The method of making it includes immersing a single crystal held at a temperature under its melting point in a melt of crystal raw material and drawing it from the melt t... | 01/13/2009 |
| 7442251 | Method for producing silicon single crystals and silicon single crystal produced thereby This method for producing silicon single crystals includes: growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a cooling member which circumferentially surrounds the silicon single c... | 10/28/2008 |
| 7431764 | Method for pulling up single crystal The axial temperature gradient G at the vicinity of the solid-liquid interface 24 in an ingot is calculated in consideration of the heating value of a heater 18, the dimensions and physical property values of furnace inside components and the convectio... | 10/07/2008 |
| 7427325 | Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby In a method for producing a high quality silicon single crystal by the Czochralski method, a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part and a circumferential part, and the temperature gradient of the central p... | 09/23/2008 |
| 7419545 | Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method The present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide single crystal is produced or grown by dissolving and reacting silicon (Si) and carbon (C) in an alkali metal flux. T... | 09/02/2008 |
| 7372995 | Analysis apparatus An analysis apparatus includes an information acquisition part for acquiring shape information about an analysis target object, an additional information extraction part for extracting additional information on the analysis target object from the shape information, ... | 05/13/2008 |
| 7368011 | Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the ... | 05/06/2008 |
| 7361219 | Method for producing silicon wafer and silicon wafer The present invention are a method for producing a silicon wafer having a crystal orientation from a silicon single crystal ingot grown by a Floating Zone method (FZ method), wherein, at least, an FZ silicon single crystal ingot is grown by being made to be di... | 04/22/2008 |
| 7351282 | Cutting method and apparatus for ingot, wafer, and manufacturing method of solar cell Cutting method of ingot into wafers along cleavage plane. Onto surface of single crystal ingot 10 is implanted ion beam 23 to generate lattice defects in a direction defined by the crystal axes that corresponds to the cleavage plane. Cleavage is genera... | 04/01/2008 |
| 7329317 | Method for producing silicon wafer The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 an... | 02/12/2008 |
| 7326292 | Quality evaluation method for single crystal ingot The inventive quality evaluation method for a single crystal ingot generally includes a step of determining cropping and sampling positions and a step of evaluating a sample. The step of determining cropping and sampling positions includes: (a) inputting basic infor... | 02/05/2008 |
| 7323048 | Method for producing a single crystal and a single crystal A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal which is being pulled without lowering a pulling rate V, thereby the si... | 01/29/2008 |
| 7314523 | Manufacturing equipment of SiC single crystal and method for manufacturing SiC single crystal A method for manufacturing a SiC single crystal from a SiC seed crystal is provided. The method includes the steps of: measuring a diameter of the SiC single crystal during a crystal growth of the SiC single crystal; and controlling the diameter of the SiC single cr... | 01/01/2008 |
| 7309392 | Lithium niobate substrate and method of producing the same In a method of producing a lithium niobate substrate by the use of a lithium niobate crystal grown by the Czochralski process, the lithium niobate crystal is heat-treated at a temperature of from 300° C. or more to less than 500° C. in the state the lithium niobat... | 12/18/2007 |
| 7309393 | High resistivity aluminum antimonide radiation detector Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection. ... | 12/18/2007 |
| 7291221 | Electromagnetic pumping of liquid silicon in a crystal growing process A method and system for use in combination with a crystal growing apparatus for growing a monocrystalline ingot according to a Czochralski process. The crystal growing apparatus has a heated crucible including a semiconductor melt from which the ingot is pulled. The... | 11/06/2007 |
| 7282094 | Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps 1 to 7, the distribution of temperatures within a singl... | 10/16/2007 |
| 7266925 | Pot having a plant cover secured thereto A plant package comprising a pot covered with a plant cover, the plant cover at least comprising a base portion, and optionally having a skirt or a detachable upper portion. The plant cover has a heat shrinkable bonding material for heat shrinking to secure the plan... | 09/11/2007 |
| 7264674 | Method for pulling a single crystal An apparatus is used to pull a single crystal, wherein a flow of an inert gas to the single crystal to be grown, a pressure in an apparatus body, and a temperature environment are always kept constant by keeping a melt level at a prescribed position in spite of chan... | 09/04/2007 |
| 7244306 | Method for measuring point defect distribution of silicon single crystal ingot A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be sym... | 07/17/2007 |
| 7244309 | Apparatus for pulling single crystal by CZ method In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon see... | 07/17/2007 |
| 7235133 | Method for growing single crystal of semiconductor By utilizing a crystal pulling apparatus for producing a single crystal according to the Czochralski method comprising at least a crucible to be charged with a raw material, a heater surrounding the crucible, and subsidiary heating means provided below the crucible,... | 06/26/2007 |
| 7235863 | Silicon wafer and process for producing it A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs... | 06/26/2007 |
| 7227983 | Automated macromolecular crystal detection system and method An automated macromolecular method and system for detecting crystals in two-dimensional images, such as light microscopy images obtained from an array of crystallization screens. Edges are detected from the images by identifying local maxima of a phase congruency-ba... | 06/05/2007 |
| 7220308 | Manufacturing method of high resistivity silicon single crystal To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high r... | 05/22/2007 |
| 7214267 | Silicon single crystal and method for growing silicon single crystal A silicon single crystal and a method for growing a silicon single crystal are provided. A p-type silicon single crystal is grown with a uniform resistivity value in a pulling direction. Pulling is conducted by the Czochralski method from molten silicon obtained by ... | 05/08/2007 |
| 7201800 | Process for making silicon wafers with stabilized oxygen precipitate nucleation centers A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected ... | 04/10/2007 |
| 7195669 | Method of producing silicon monocrystal A silicon single crystal rod (24) is pulled from a silicon melt (13) made molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal r... | 03/27/2007 |
| 7193731 | Optical displacement sensor Optical displacement sensor may possess light-emitting element(s) for projecting light onto distance measurement target(s), and light-receiving element(s) capable of receiving light reflected from distance measurement target(s) and disposed such that light-receiving... | 03/20/2007 |
| 7191561 | Pot having a plant cover secured thereto A plant package comprising a pot covered with a plant cover, the plant cover at least comprising a base portion, and optionally having a skirt or a detachable upper portion. The plant cover has a heat shrinkable bonding material for heat shrinking to secure the plan... | 03/20/2007 |
| 7172656 | Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus In a device and a method for measuring the position of the liquid surface of a melt while a single crystal is being pulled, two measuring-lines are defined in an image of a fusion ring which is captured by means of a two-dimensional CCD camera, the intersections of ... | 02/06/2007 |
| 7160386 | Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconducto... | 01/09/2007 |
| 7147710 | Method of manufacturing epitaxial silicon wafer There is described a method which enables stable manufacture of a high-quality, ultra-thin epitaxial silicon wafer, as well as an epitaxial silicon wafer capable of bearing shipment manufactured by the method. A method of manufacturing an epitaxial silicon wafer hav... | 12/12/2006 |
| 7132091 | Single crystal silicon ingot having a high arsenic concentration A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 Ω·cm. ... | 11/07/2006 |
| 7125450 | Process for preparing single crystal silicon using crucible rotation to control temperature gradient The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient in the crystal, G0, as a function of radius (i.e., G0... | 10/24/2006 |
| 7122082 | Silicon wafer and manufacturing method thereof A silicon wafer wherein stacking fault (SF) nuclei are distributed throughout the entire in-plane direction, and the density of the stacking fault nuclei is set to a range of between 0.5×108 cm−3 and 1×1011 cm−3.... | 10/17/2006 |
