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| Number | Title | Issue Date |
| 8133318 | Epitaxially coated silicon wafer with 110 orientation and method for producing it An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the direction of the single silicon crystal is tilted away by the angle θ from the normal to the wafer surface and the projection of the tilte... | 03/13/2012 |
| 8110042 | Method for manufacturing single crystal Using a pulling-up apparatus, an oxygen concentration of the monocrystal at a predetermined position in a pulling-up direction is controlled based on a relationship in which the oxygen concentration of the monocrystal is decreased as a flow rate of the inactive gas ... | 02/07/2012 |
| 8105436 | Single crystal silicon wafer for insulated gate bipolar transistors and process for producing the same A single crystal silicon wafer for use in the production of insulated gate bipolar transistors is made of single crystal silicon grown by the Czochralski method and has a gate oxide with a film thickness of from 50 to 150 nm. The wafer has an interstitial oxygen con... | 01/31/2012 |
| 8012255 | Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper err... | 09/06/2011 |
| 7883578 | Process for preparing CaFlens blanks especially for 193 nm and 157 nm lithography with minimized deffects Homogeneity residuals of the refractive index have a strong influence on the performance of lithography tools for both 193 and 157 nm application wavelengths. By systematic investigations of various defects in the real structure of CaF2 crystals, the orig... | 02/08/2011 |
| 7875117 | Nitrogen doped silicon wafer and manufacturing method thereof An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitat... | 01/25/2011 |
| 7776152 | Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth Apparatus and method for growing and observing the growth of epitaxial layers on a wafer. The apparatus includes: epitaxial growth apparatus; a source of light mounted to illuminate an entire surface of the wafer in the apparatus during growth of the epitaxial layer... | 08/17/2010 |
| 7767020 | Method for manufacturing single crystal semiconductor A method for manufacturing a single crystal semiconductor, in which, in a process of pulling up the single crystal semiconductor from melt for growing it, an impurity is incorporated more uniformly into the single crystal semiconductor so that a variation in impurit... | 08/03/2010 |
| 7632349 | Silicon wafer surface defect evaluation method There is provided a silicon wafer surface defect evaluation method capable of readily detecting a region where small crystal defects exist, the evaluation method comprising: a rapid heat treatment step of a silicon wafer from a silicon single-crystal ingot in an atm... | 12/15/2009 |
| 7524371 | Method for manufacturing defect-free silicon single crystal A method for controlling the temperature gradient on the side surface of a silicon single crystal, the height of a solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal is provided in order to manufacture a ... | 04/28/2009 |
| 7431764 | Method for pulling up single crystal The axial temperature gradient G at the vicinity of the solid-liquid interface 24 in an ingot is calculated in consideration of the heating value of a heater 18, the dimensions and physical property values of furnace inside components and the convectio... | 10/07/2008 |
| 7413605 | Method for manufacturing silicon single crystal By pulling up an ingot in consideration of deformation of a crucible, generation of the defective ingot is prevented and a plurality of ingots having equivalent quality with the first ingot are pulled up in a multiple pull-up. Firstly, a deformation amount of a cruc... | 08/19/2008 |
| 7368011 | Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the ... | 05/06/2008 |
| 7361219 | Method for producing silicon wafer and silicon wafer The present invention are a method for producing a silicon wafer having a crystal orientation from a silicon single crystal ingot grown by a Floating Zone method (FZ method), wherein, at least, an FZ silicon single crystal ingot is grown by being made to be di... | 04/22/2008 |
| 7329317 | Method for producing silicon wafer The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 an... | 02/12/2008 |
| 7326292 | Quality evaluation method for single crystal ingot The inventive quality evaluation method for a single crystal ingot generally includes a step of determining cropping and sampling positions and a step of evaluating a sample. The step of determining cropping and sampling positions includes: (a) inputting basic infor... | 02/05/2008 |
| 7323047 | Method for manufacturing granular silicon crystal In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during fal... | 01/29/2008 |
| 7323053 | Pulling-down apparatus and container therefor It is an object of the present invention to provide a pulling-down apparatus that can breed a crystal having good characteristics of scintillation. The apparatus retains in a container that can control an atmosphere a melting pot having a narrow hole at the bottom s... | 01/29/2008 |
| 7314523 | Manufacturing equipment of SiC single crystal and method for manufacturing SiC single crystal A method for manufacturing a SiC single crystal from a SiC seed crystal is provided. The method includes the steps of: measuring a diameter of the SiC single crystal during a crystal growth of the SiC single crystal; and controlling the diameter of the SiC single cr... | 01/01/2008 |
| 7291370 | Packaging material and containers formed therefrom The flexible, reusable packaging container of the present invention is comprised of a packaging material. The packaging material is comprised of one or more layers of coating disposed on one or more layers of textile substrate. The coating layer may be comprised of ... | 11/06/2007 |
| 7291225 | Heat shield and crystal growth equipment A heat shield and a crystal growth equipment are provided, in which the length-adjustable and hybrid-angle heat shield is provided for the crystal growth equipments. The heat shield is adapted for not only guiding the inert gas flow but also speeding up the flow rat... | 11/06/2007 |
| 7282094 | Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps 1 to 7, the distribution of temperatures within a singl... | 10/16/2007 |
| 7266925 | Pot having a plant cover secured thereto A plant package comprising a pot covered with a plant cover, the plant cover at least comprising a base portion, and optionally having a skirt or a detachable upper portion. The plant cover has a heat shrinkable bonding material for heat shrinking to secure the plan... | 09/11/2007 |
| 7264674 | Method for pulling a single crystal An apparatus is used to pull a single crystal, wherein a flow of an inert gas to the single crystal to be grown, a pressure in an apparatus body, and a temperature environment are always kept constant by keeping a melt level at a prescribed position in spite of chan... | 09/04/2007 |
| 7264750 | Rare earth silicate single crystal and process for production of rare earth silicate single crystals When produced as a single crystal ingot, a rare earth silicate single crystal 1 can be formed by cutting out from the single crystal ingot. The single crystal 1 has a crystal face F100 whose Miller indices can be determined by X-ray diffraction.... | 09/04/2007 |
| 7255740 | Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements A method is described for making low-stress single crystals with a hexagonal crystal structure, which has a crystallographic c-axis perpendicular to a [0001] surface. A single crystal maintained at a temperature under the melting point of the crystal raw material is... | 08/14/2007 |
| 7247202 | Process for the conversion of a fluid phase substrate by dynamic heterogeneous contact with a solid agent A process for the conversion of a substantially fluid phase substrate by heterogeneous contact of the substrate or a fragment or derivative thereof with a substantially solid phase agent wherein the solid phase agent is comprised as a surface of a support element or... | 07/24/2007 |
| 7244177 | Variable volume storage member for a coin dispensing apparatus An improved coin hopper that can be provided as original equipment or as a conversion member for a coin dispensing apparatus is provided. The coin hopper includes a housing member having a cavity for storing coins when mounted in a coin dispensing apparatus and a mo... | 07/17/2007 |
| 7244306 | Method for measuring point defect distribution of silicon single crystal ingot A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be sym... | 07/17/2007 |
| 7235128 | Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the o... | 06/26/2007 |
| 7235133 | Method for growing single crystal of semiconductor By utilizing a crystal pulling apparatus for producing a single crystal according to the Czochralski method comprising at least a crucible to be charged with a raw material, a heater surrounding the crucible, and subsidiary heating means provided below the crucible,... | 06/26/2007 |
| 7229495 | Silicon wafer and method for producing silicon single crystal A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silico... | 06/12/2007 |
| 7227983 | Automated macromolecular crystal detection system and method An automated macromolecular method and system for detecting crystals in two-dimensional images, such as light microscopy images obtained from an array of crystallization screens. Edges are detected from the images by identifying local maxima of a phase congruency-ba... | 06/05/2007 |
| 7226506 | Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer A method for eliminating slip dislocations in producing single crystal silicon, a seed crystal capable of eliminating the slip dislocations, a single crystal silicon ingot from which the slip dislocations have been eliminated and a single crystal silicon wafer, are ... | 06/05/2007 |
| 7208042 | Method of manufacturing silicon single crystal and silicon single crystal manufactured by the method A silicon single crystal ingot is pulled at a pull rate so that the interior of the ingot results in a perfect region in which agglomerates of interstitial silicon-type point defects and agglomerates of vacancy-type point defects are absent, while rotating a quartz ... | 04/24/2007 |
| 7201800 | Process for making silicon wafers with stabilized oxygen precipitate nucleation centers A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected ... | 04/10/2007 |
| 7195671 | Thermal shield An apparatus for growing crystals includes a sealed chamber having a crucible assembly and a seed holder disposed therein. The crucible assembly is adapted to contain a melt therein and the seed holder is selectively positionable within the chamber from a first posi... | 03/27/2007 |
| 7191561 | Pot having a plant cover secured thereto A plant package comprising a pot covered with a plant cover, the plant cover at least comprising a base portion, and optionally having a skirt or a detachable upper portion. The plant cover has a heat shrinkable bonding material for heat shrinking to secure the plan... | 03/20/2007 |
| 7176405 | Heat shield for thermal processing A heat shield (10) that facilitates thermally processing a substrate (22) with a radiation beam (150) is disclosed. The heat shield is in the form of a cooled plate adapted to allow the radiation beam to communicate with the substrate upper surf... | 02/13/2007 |
| 7172656 | Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus In a device and a method for measuring the position of the liquid surface of a melt while a single crystal is being pulled, two measuring-lines are defined in an image of a fusion ring which is captured by means of a two-dimensional CCD camera, the intersections of ... | 02/06/2007 |
