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| Number | Title | Issue Date |
| 8172941 | Method and device for producing semiconductor wafers of silicon Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt... | 05/08/2012 |
| 8172942 | Arc discharge apparatus, apparatus and method for manufacturing vitreous silica glass crucible, and method for pulling up silicon single crystal The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a ... | 05/08/2012 |
| 8163083 | Silica glass crucible and method for pulling up silicon single crystal using the same A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 μm/hr or les... | 04/24/2012 |
| 8142565 | Vitreous silica crucible for pulling single-crystal silicon A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liqui... | 03/27/2012 |
| 8062419 | Rare-earth oxyorthosilicate scintillator crystals and method of making rare-earth oxyorthosilicate scintillator crystals A method of making LSO scintillators with high light yield and short decay times is disclosed. In one arrangement, the method includes codoping LSO with cerium and another dopant from the IIA or IIB group of the periodic table of elements. The doping levels are chos... | 11/22/2011 |
| 8048221 | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities... | 11/01/2011 |
| 8043427 | Semiconductor wafers of silicon and method for their production Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the... | 10/25/2011 |
| 7972438 | High-index UV optical materials for immersion lithography This invention is related to material for use as an ultraviolet (UV) optical element and particularly for use as a 193 nm immersion lens element. The material for use as a UV optical element includes a Lithium Magnesium Aluminate (LMAO) body. The specific compound f... | 07/05/2011 |
| 7887633 | Germanium-enriched silicon material for making solar cells Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon l... | 02/15/2011 |
| 7875115 | Epitaxial wafer and method for producing epitaxial wafers This disclosure is aimed at providing a method for producing an epitaxial wafer allowing uniform occurrence of oxygen precipitate in a substrate plane in the radial direction in a base plate and excelling in the crystal quality of an epi-layer. A method for t... | 01/25/2011 |
| 7875116 | Silicon single crystal producing method, annealed wafer, and method of producing annealed wafer A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of... | 01/25/2011 |
| 7862656 | Apparatus and method for growing a crystal and heating an annular channel circumscribing the crystal An apparatus and method is provided for pulling a crystal seed from melt for growing a single crystal. The method includes the steps of providing a crucible and providing within the crucible an outer container, and providing coaxially within the outer container an i... | 01/04/2011 |
| 7846252 | Silicon wafer for IGBT and method for producing same A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot... | 12/07/2010 |
| 7846253 | Silicon semiconductor substrate and production method thereof The present invention can provide a silicon semiconductor substrate used for and epitaxial wafer, in which uniform and high-level gettering ability is obtained irrespective of slicing positions from a silicon single crystal while generation of epitaxial defects can ... | 12/07/2010 |
| 7837791 | Silicon single crystal wafer for particle monitor A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepar... | 11/23/2010 |
| 7819972 | Method for growing silicon single crystal and method for manufacturing silicon wafer In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×1017 to 18×1017 atoms/cm3 on ASTM-F121 1979. A mixed gas of an inert gas and a gase... | 10/26/2010 |
| 7803228 | Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and SOI wafers By using oxygen-containing silicon wafers obtained by the CZ method and by combining the first heat treatment comprising controlled heat-up operation (ramping) with the second heat treatment comprising high-temperature heat treatment and medium temperature heat trea... | 09/28/2010 |
| 7754009 | Unpolished semiconductor wafer and method for producing an unpolished semiconductor wafer Unpolished semiconductor wafers are produced by: (a) pulling a single crystal of a semiconductor material, (b) grinding the single crystal round, (c) separating a semiconductor wafer from this crystal, (d) rounding the edge of the semiconductor wafer, (e) surface-gr... | 07/13/2010 |
| 7740702 | Silicon wafer and method for manufacturing the same A silicon wafer and a method for manufacturing the same are provided, wherein the silicon wafer has no crystal defects in the vicinity of the surface and provides excellent gettering efficiency in the process of manufacturing devices without IG treatment. The oxygen... | 06/22/2010 |
| 7708830 | Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center... | 05/04/2010 |
| 7708829 | Method and apparatus for crystal growth A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect whic... | 05/04/2010 |
| 7708828 | Dust-free and pore-free, high-purity granulated polysilicon A polycrystalline granulated silicon is made of particles which have a density of greater than 99.9% of the theoretical solid density and therefore have a pore content of less than 0.1% and have a surface roughness Ra of less than 150 nm. ... | 05/04/2010 |
| 7708827 | Highly pure, replaceable wear insert and process for manufacturing the same A highly pure, replaceable wear insert and a process for manufacturing the same use a group of materials which is suitable for meeting the requirements of high temperature semiconductor technology processes and is chosen at the same time for producing thin layers or... | 05/04/2010 |
| 7704318 | Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate When growing a silicon single crystal free of grown-in defects based on the CZ method, the crystal is pulled out at a critical pulling rate at which a ring-shaped OSF occurrence region vanishes in a center portion of the crystal by using a hot zone structure in whic... | 04/27/2010 |
| 7641733 | Method and apparatus for growth of multi-component single crystals A method and apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm−2 and a radial compositiona... | 01/05/2010 |
| 7635413 | Method for preparing silicon carbide single crystal A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cool... | 12/22/2009 |
| 7618491 | Scintillator single crystal and production method of same A scintillator single crystal of a specific cerium-doped silicate compound that contains 0.00005 to 0.1 wt % of one or more types of element selected from the group consisting of elements belonging to group 2 of the periodic table based on the total weight of the si... | 11/17/2009 |
| 7582159 | Method for producing a single crystal A method for producing a single crystal by Czochralski method with pulling a seed crystal from a raw material melt, wherein in which a range of a pulling rate of pulling a single crystal, a temperature gradient at a solid-liquid interface and a highest temperature a... | 09/01/2009 |
| 7544246 | Lithium tantalate substrate and method of manufacturing same In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 16... | 06/09/2009 |
| 7544248 | Lithium tantalate substrate and method of manufacturing same In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 16... | 06/09/2009 |
| 7544247 | Lithium tantalate substrate and method of manufacturing same In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 16... | 06/09/2009 |
| 7537657 | Silicon wafer and process for producing it A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs... | 05/26/2009 |
| 7537658 | Method for producing epitaxial silicon wafer An oxide film 13 on the surface of the substrate 11 and an inner wall oxide film 112 in a COP 111 exposed to the surface of the substrate 11 are removed by cleaning the surface of the substrate 11 with a hydrofluoric acid so... | 05/26/2009 |
| 7507291 | Method and apparatus for growing multiple crystalline ribbons from a single crucible Methods and apparatus for concurrent growth of multiple crystalline ribbons from a single crucible employ meniscus shapers to facilitate continuous growth of discrete and substantially flat crystalline ribbons having controlled width. ... | 03/24/2009 |
| 7442251 | Method for producing silicon single crystals and silicon single crystal produced thereby This method for producing silicon single crystals includes: growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a cooling member which circumferentially surrounds the silicon single c... | 10/28/2008 |
| 7435379 | System for performing crystallization trials A trial generation station is provided comprising: a deck configured to receive a crystallization plate from a transport mechanism, the crystallization plate including a plurality of trial zones where crystallization trials are generated; and a head configured to be... | 10/14/2008 |
| 7435294 | Method for manufacturing silicon single crystal, and silicon wafer A silicon single crystal is manufactured by growing said crystal composed of a defect-free area free from the Grown-in defects by the CZ process, adding a gas of a hydrogen atom-containing substance to an atmosphere gas within a growing apparatus, and doping nitroge... | 10/14/2008 |
| 7435397 | System for performing crystallization trials A crystallization system is provided comprising a screen generation station; a screen storage station; including a housing configured to store a plurality of screen storage plates and mechanics for retrieving a selected screen storage plate from among the plurality ... | 10/14/2008 |
| 7431764 | Method for pulling up single crystal The axial temperature gradient G at the vicinity of the solid-liquid interface 24 in an ingot is calculated in consideration of the heating value of a heater 18, the dimensions and physical property values of furnace inside components and the convectio... | 10/07/2008 |
| 7431765 | Process for preparing single crystal silicon having improved gate oxide integrity A process for producing a single crystal silicon wafer comprising a front surface, a back surface, a lateral surface joining the front and back surfaces, a central axis perpendicular to the front and back surfaces, and a segment which is axially symmetric about the ... | 10/07/2008 |
