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| Number | Title | Issue Date |
| 7544245 | Method for producing barium titanium oxide single-crystal piece using containerless processing Disclosed is a method for producing a barium titanium oxide single crystal piece with a given structure using a containerless solidification process, which comprises the steps of preparing a material made of a barium titanium oxide, controlling the material to be in... | 06/09/2009 |
| 7399360 | Crucible and method of growing single crystal by using crucible Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of ... | 07/15/2008 |
| 7335908 | Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.... | 02/26/2008 |
| 7326477 | Spinel boules, wafers, and methods for fabricating same A single crystal spinel wafer is disclosed, including a front face and a back face; and an outer periphery having first and second flats. In certain embodiments, the single crystal wafer has a specific crystallographic orientation, and the flats are provided to exte... | 02/05/2008 |
| 7198672 | Drop tube type granular crystal producing device A drop tube type particulate crystalline body producing device is a device for creating a substantially spherical crystalline body by solidifying a particulate melt of an inorganic material while allowing it to free-fall inside a drop tube. This device 1 has ... | 04/03/2007 |
| 7179330 | Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of... | 02/20/2007 |
| 7151261 | Method of enhancing performance of cerium doped lutetium orthosilicate crystals and crystals produced thereby A method for enhancing the light yield of a single crystal of cerium doped lutetium orthosilicate (LSO) in response to irradiation with high energy radiation includes diffusing oxygen into the crystal by heating the crystal for a period of time in an ambient contain... | 12/19/2006 |
| 7132060 | Scintillation substances (variants) Inventions relates to scintillation substances and they may be utilized in nuclear physics, medicine and oil industry for recording and measurements of X-ray, gamma-ray and alpha-ray, nondestructive testing of solid states structure, three-dimensional positron-emiss... | 11/07/2006 |
| 7034074 | Aqueous primary dispersions and coating agents, methods for producing them and their use Aqueous primary dispersions and coating materials comprising dispersed and/or emulsified, solid and/or liquid polymer particles and/or dispersed solid core-shell particles having a diameter≦500 nm, preparable by free-radical microemulsion or miniemulsion polymeriz... | 04/25/2006 |
| 6946512 | Molding materials and method for producing molded parts Use of a copolymer (A) preparable by free-radical polymerization of a) at least one olefinically unsaturated monomer and b) at least one olefinically unsaturated monomer different than the olefinically unsaturated monomer (a) and of the gen... | 09/20/2005 |
| 6921901 | Lutetium yttrium orthosilicate single crystal scintillator detector A single crystal having the general composition, Ce2x(Lu1-yYy)2(1-x)SiO5 where x=approximately 0.00001 to approximately 0.05 and y=approximately 0.0001 to approximately 0.9999; preferably where x ranges from app... | 07/26/2005 |
| 6784121 | Integrated circuit dielectric and method A xerogel aging system includes an aging chamber (190) with inlets and outlet and flows a gel catalyst in gas phase over a xerogel precursor film on a semiconductor wafer. Preferred embodiments use an ammonia and water vapor gas mixture catalyst. ... | 08/31/2004 |
| 6607593 | Method of manufacturing a mono-crystalline silicon ball When a crystalline nucleus generated from an under-cooled silicon droplet is grown up to a mono-crystalline silicon ball, a critical under-cooling ƊTcr is determined in response to a diameter d of the silicon droplet so as to satisfy the relat... | 08/19/2003 |
| 6605152 | Catch pan for melt leakage in apparatus for pulling single crystal The present invention provides a catch pan for melt leakage provided under a crucible at a bottom portion of a chamber in a single crystal pulling apparatus based on the CZ method, wherein the catch pan for melt leakage comprises at least a bottom portion... | 08/12/2003 |
| 6440212 | Low cost method for making thermoelectric coolers A process of making thermoelectric coolers by direct printing of n- and p-type semiconductor materials suitable for making thermoelectric coolers is disclosed. Micro Jet Printing of arrays on n and p-type materials belong to conductive site pads on non-co... | 08/27/2002 |
| 6387177 | Method for manufacturing a segmented crystal The present invention relates to a method for manufacturing a crystal with at least two segments, wherein adjacent segments differ by at least one characteristic. The different segments can, for example, be of different materials, or have a different dopi... | 05/14/2002 |
| 6379459 | Crystallization of powders having uniform particle sizes by Ostwald ripening at large levels of supersaturation A method is provided for the manufacture of mineral power crystals having a uniform mean size. The method includes forming a solution which is highly supersaturated with respect to the crystals. The crystals of the solution are Ostwald ripened at a level ... | 04/30/2002 |
| 6299982 | Silicon single crystal wafer and method for producing silicon single crystal wafer There is disclosed a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, wherein a size of grown-in defects in the silicon single crystal wafer is 70 nm or less, a silicon si... | 10/09/2001 |
| 6278832 | Scintillating substance and scintillating wave-guide element The invention is related to nuclear physics, medicine and oil industry, namely to the measurement of x-ray, gamma and alpha radiation; control for trans uranium nuclides in the habitat of a man; non destructive control for the structure of heavy bodies; t... | 08/21/2001 |
| 6235109 | Method of preparing crystalline or amorphose material from melt A method of preparing a crystalline or amorphous material, wherein a droplet of a melt of a metal-containing material is cooled in the atmosphere of an inert gas or in vacuum and in a microgravity environment to solidify the droplet. The cooling is perfor... | 05/22/2001 |
| 5858862 | Process for producing quantum fine wire A process of producing quantum fine wires, it is called silicon nanowires, too, which allows silicon quantum fine wires to grow into desirable shapes. In this process, gold is deposited on a silicon substrate to a thickness of 5 nm or less, and the silico... | 01/12/1999 |
| 5660627 | Method of growing lutetium oxyorthosilicate crystals A method for producing lutetium oxyorthosilicate crystals includes maintaining the interface between a crystal and the melt from which it is pulled substantially flat as the crystal is grown. In a Czochralski growth method, the rate of rotation of the cry... | 08/26/1997 |
| 5647904 | Method for manufacturing superconducting ceramics in a magnetic field A method and an apparatus for fabricating single crystals of superconducting ceramics are described. A powdered row oxide mixture is placed and molten in a melting pot. The surface of the molten mixture is approximately at the freezing point of the mixtur... | 07/15/1997 |
| 5381753 | Fabrication method of fine structures A fabrication method provides fine structures which have few carrier trap centers and light absorption levels and find applications in quantum wires and quantum boxes having arbitrary configurations at least within a two-dimensional plane. The fabrication... | 01/17/1995 |
| 5108720 | Float zone processing of particulate silicon The present invention is a float-zone process for forming particulate silicon into monocrystalline silicon. The process employs a reusable silicon conduit having a lower end heated to form a melt zone and an upper end provided with a means for delivering ... | 04/28/1992 |
| 5006317 | Process for producing crystalline silicon ingot in a fluidized bed reactor Crystalline silicon ingots are produced directly from an internally heated bed of silicon particles.... | 04/09/1991 |
| 4606846 | Mixed rare earth metal, divalent transition metal, aluminum oxide A mixed aluminum oxide having the following formula: wherein X1 and X2, which can be the same or different, represent a metal selected from the group consisting of lanthanum, praseodymium, neodymium, samarium and gadolinium, provided that... | 08/19/1986 |
