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| Number | Title | Issue Date |
| 7931748 | Systems and methods for the production of highly tetrahedral amorphous carbon coatings The invention provides systems and methods for the deposition of an improved diamond-like carbon material, particularly for the production of magnetic recording media. The diamond-like carbon material of the present invention is highly tetrahedral, that is, it featu... | 04/26/2011 |
| 7594968 | Ultratough CVD single crystal diamond and three dimensional growth thereof The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at l... | 09/29/2009 |
| 7553373 | Silicon carbide single crystal and production thereof A method of producing a silicon carbide single crystal, having: fixing a seed crystal, including setting a seed crystal on a seed crystal fixing part with interposition of an adhesive; applying a uniform pressure on the entire surf... | 06/30/2009 |
| 7501024 | Carbon nanohorn producing device and carbon nanohorn producing method A plume (109) is generated by irradiating a side face of a graphite rod (101) with a laser beam (103) to vaporize carbon. The vaporized carbon is introduced to a carbon nanohorn recovery chamber (119) through a recovery pipe (155),... | 03/10/2009 |
| 7497906 | Seed crystal fixing apparatus and a method for fixing the seed crystal A seed crystal fixing apparatus for fixing the seed crystal on the seed crystal setting part of a reaction vessel with interposition of the adhesive, has a chamber configured to place the seed crystal setting part and form a hermetic atmosphere within the chamber; a... | 03/03/2009 |
| 7387679 | Silicon carbide single crystal and method and apparatus for producing the same A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second... | 06/17/2008 |
| 7323051 | One hundred millimeter single crystal silicon carbide wafer A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbi... | 01/29/2008 |
| 7316746 | Crystals for a semiconductor radiation detector and method for making the crystals A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone... | 01/08/2008 |
| 7314520 | Low 1c screw dislocation 3 inch silicon carbide wafer A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm−2. ... | 01/01/2008 |
| 7314521 | Low micropipe 100 mm silicon carbide wafer A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm−2. ... | 01/01/2008 |
| 7311267 | Product dispenser and carrier A product dispenser and carrier (10, 110, 210, 310, 410, 510, 610) for attachment to a surface such as a dryer fin includes a plate member (11, 111, 211, 311, 411, 511) and a product carrier (21, 121, 221, 321, 421, 521). The plate member (11... | 12/25/2007 |
| 7309026 | Product dispenser and carrier A product dispenser (10, 110, 210, 310, 410, 510, 610, 710, 720, 730, 740, 750, 760, 780, 800, 810, 820, 830, 840, 850, and 860) for attachment to a surface such as an inner surface of a dryer releasably attaches a product (31, 131, 431, 531, 713, 7... | 12/18/2007 |
| 7300519 | Reduction of subsurface damage in the production of bulk SiC crystals The invention is an improvement in a method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. The improvement includes etching the front face on each of a first and second SiC seed to a depth of greater than about 20 ... | 11/27/2007 |
| 7279041 | Atomic layer deposition methods and atomic layer deposition tools An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effect... | 10/09/2007 |
| 7258745 | Method for fabricating hafnia films The present invention comprises a method for fabricating hafnia film comprising the steps of providing a substrate having a surface that allows formation of a self-assembled monolayer thereon via covalent bonding; providing an aqueous solution that provides homogene... | 08/21/2007 |
| 7220313 | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing ... | 05/22/2007 |
| 7220321 | Apparatus and processes for the mass production of photovoltaic modules An apparatus and processes for large scale inline manufacturing of CdTe photovoltaic modules in which all steps, including rapid substrate heating, deposition of CdS, deposition of CdTe, CdCl2 treatment, and ohmic contact formation, are performed within a... | 05/22/2007 |
| 7214903 | Melting and vaporizing apparatus and method An apparatus and method for heating materials or substances in an oven at an oven temperature below their melting and/or vaporization points to either melt and/or vaporize the substance. Substances are inserted into a substantially spherical envelope. The envelope i... | 05/08/2007 |
| 7175704 | Method for reducing defect concentrations in crystals A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high p... | 02/13/2007 |
| 7161110 | Melting and vaporizing apparatus and method An apparatus and method for heating materials or substances in an oven at an oven temperature below their melting and/or vaporization points to either melt and/or vaporize the substance. Substances are inserted into a substantially spherical envelope. The envelope i... | 01/09/2007 |
| 7147715 | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen A method is disclosed for producing semi-insulating silicon carbide crystal with a controlled nitrogen content. The method includes the steps of introducing an ambient gas containing hydrogen into a sublimation growth chamber, heating a silicon carbide source powder... | 12/12/2006 |
| 7087112 | Nitride ceramics to mount aluminum nitride seed for sublimation growth An apparatus and method for fabricating a mount for an aluminum nitride (AlN) seed for single crystal aluminum nitride growth is provided. A holder having a proximal base and wall portions extending therefrom is fabricated from crystal growth crucible material, and ... | 08/08/2006 |
| 7083680 | Sublimation and purification method A glass bottle containing a sample of an organic material to be purified is located at a position surrounded by a heater near one end in an outer glass tube. An inner glass tube for catching organic crystals obtained by recrystallization is located at a position nea... | 08/01/2006 |
| 7056383 | Tantalum based crucible A crucible is provided that is thermally stable at high temperatures and is suitable for use in the growth of large, bulk AlN, AlxGa1-xN or other nitride single crystals. The crucible is comprised of specially treated tantalum. During the initi... | 06/06/2006 |
| 7055761 | Product dispenser and carrier A product dispenser and carrier (10, 110, 210, 310, 410, 510, 610) includes a product (31, 131, 431, 531) operatively connected to a product carrier (21, 121, 221, 321, 421, 521). The product dispenser and carrier (10, 110, 210, 310, 410, 510... | 06/06/2006 |
| 7048798 | Silicon carbide single crystal and method and apparatus for producing the same A method of producing a silicon carbide single crystal in which a sublimation raw material 40 is accommodated at the side of vessel body 12 in a graphite crucible 10, placing a seed crystal of a silicon carbide single crystal at the side of cove... | 05/23/2006 |
| 7045009 | Method and apparatus for manufacturing single crystal A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a c... | 05/16/2006 |
| 6984448 | Cubic boron nitride clusters A cubic boron nitride cluster comprises a core (10) and an overgrown region, the overgrown region containing a plurality of cubic boron nitride crystallites (12) extending outwards from the core (10). The majority of the cubic boron nitride crys... | 01/10/2006 |
| 6962624 | Method and device for depositing in particular organic layers using organic vapor phase deposition The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in ga... | 11/08/2005 |
| 6935618 | Valve component with multiple surface layers A sliding component, particularly a disk valve plate. The sliding component includes a multi-layer surface structure comprising a strengthening layer harder than the substrate material, and an amorphous diamond top layer. ... | 08/30/2005 |
| 6916374 | Atomic layer deposition methods and atomic layer deposition tools An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effect... | 07/12/2005 |
| 6908041 | Product dispenser and carrier A product dispenser and carrier (10, 110, 210, 310, 410, 510, 610) for attachment to a surface such as a dryer fin includes a plate member (11, 111, 211, 311, 411, 511) and a product carrier (21, 121, 221, 321, 421, 521). The plate member (11... | 06/21/2005 |
| 6863728 | Apparatus for growing low defect density silicon carbide A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first s... | 03/08/2005 |
| 6833027 | Method of manufacturing high voltage schottky diamond diodes with low boron doping A method of making a Schottky diode comprising the steps of: providing a single crystal diamond comprising a surface; placing the single crystal diamond in a CVD system; heating the diamond to a temperature of at least about 950° C.; providing a gas mixture capable... | 12/21/2004 |
| 6783592 | Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations The present invention is related to a method that enables and improves wide bandgap homoepitaxial layers to be grown on axis single crystal substrates, particularly SiC. The lateral positions of the screw dislocations in epitaxial layers are predetermined instead of... | 08/31/2004 |
| 6770137 | Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same A crucible has first member and second cylindrical body, and is disposed in a lower chamber. The fist member is disposed in the second cylindrical body so as to define a gas flow path formed therebetween as a gap. A pedestal is disposed inside the first member. A se... | 08/03/2004 |
| 6569240 | Dielectric film and method for forming the same After an underlying layer, made of a single crystal metal material, has been formed on a semiconductor layer, part or all of the underlying layer is changed into a metal oxide layer by supplying oxygen thereto from above the underlying layer. Then, a ferr... | 05/27/2003 |
| 6562131 | Method for growing single crystal silicon carbide A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square centimeter, a micropipe density of less than 10 per... | 05/13/2003 |
| 6562130 | Low defect axially grown single crystal silicon carbide A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square centimeter, a micropipe density of less than 10 per... | 05/13/2003 |
| 6554897 | Method of producing silicon carbide A method of producing silicon carbide (SiC), by introducing into the interior of a furnace a quantity of relatively pure elemental silicon and a quantity of elemental carbon; subjecting the interior of the furnace to a vacuum; and heating the silicon and ... | 04/29/2003 |
