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| Number | Title | Issue Date |
| 8163086 | Halogen assisted physical vapor transport method for silicon carbide growth A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated sili... | 04/24/2012 |
| 7648577 | MBE growth of p-type nitride semiconductor materials A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used as the nitrogen precursor for the MBE growth process. To grow p-type ... | 01/19/2010 |
| 7591897 | Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures A process for the rapid synthesis of metal oxide nanoparticles at low temperatures and methods which facilitate the fabrication of long metal oxide nanowires. The method is based on treatment of metals with oxygen plasma. Using oxygen plasma at low temperatures allo... | 09/22/2009 |
| 7435297 | Molten-salt-based growth of group III nitrides A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is ... | 10/14/2008 |
| 7419546 | Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof A method for forming a noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web to a first ion beam having an energy not higher than 500 eV, then to a second beam having an energy o... | 09/02/2008 |
| 7402206 | Method of synthesizing a compound of the formula MAX, film of the compound and its use A method of synthesizing or growing a compound having the general formula Mn+1AXn(16) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen or both, which comprises the step of exposing ... | 07/22/2008 |
| 7399357 | Atomic layer deposition using multilayers A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In this method, a first reactant is admitted into the reaction chamber vol... | 07/15/2008 |
| 7371586 | Superconductor and process for producing the same A superconductor and a method for producing the same are provided. The method for producing a superconductor includes the step of forming a superconducting layer on a base layer by performing a film deposition at least three times, wherein the film thickness of a su... | 05/13/2008 |
| 7371281 | Silicon carbide single crystal and method and apparatus for producing the same A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course o... | 05/13/2008 |
| 7368067 | P-type zinc oxide semiconductor film and process for preparation thereof A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained such that its concentration is distributed to increase toward an end o... | 05/06/2008 |
| 7354783 | Method for fabricating a semiconductor component based on GaN A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body a... | 04/08/2008 |
| 7351286 | One hundred millimeter single crystal silicon carbide wafer A method of producing a high quality bulk single crystal of silicon carbide in a seeded growth system is disclosed. The method includes positioning the seed crystal in a crucible while exerting minimal torsional forces on the seed crystal to thereby prevent torsiona... | 04/01/2008 |
| 7341628 | Method to reduce crystal defects particularly in group III-nitride layers and substrates Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium ... | 03/11/2008 |
| 7338582 | Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure having excellent oxygen reduction catalysis ability and composed of se... | 03/04/2008 |
| 7294209 | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask A battery-operated device provided on a thin-film battery and a method for making. Some embodiments provide a system that includes a vacuum chamber, a plurality of pairs of source and take-up reels within the vacuum chamber, including a first source reel that suppli... | 11/13/2007 |
| 7279041 | Atomic layer deposition methods and atomic layer deposition tools An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effect... | 10/09/2007 |
| 7276121 | Forming improved metal nitrides Method and apparatus are provided for forming metal nitride (MN), wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and then contacting MI with ammonia to form the MN in a process of reduced or no toxicity. Such method ... | 10/02/2007 |
| 7273664 | Preparation method of a coating of gallium nitride The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating, said substrate being coated with a buffer layer, wherein: at least a ... | 09/25/2007 |
| 7250386 | Quantum limit catalysts and hydrogen storage materials A quantum limit catalyst. The instant quantum limit catalyst is comprised of atomic aggregations whose dimensions correspond to the quantum limit. In the quantum limit, the atomic aggregations acquire structural configurations and electronic interactions not attaina... | 07/31/2007 |
| 7244344 | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas sour... | 07/17/2007 |
| H2193 | Method of growing homoepitaxial silicon carbide A method of growing a SiC film within an MBE system is disclosed. The method includes charging a first crucible with a quality of C60, and coating a second crucible with a layer of SiC. The second crucible is charged with a quantity of solid Si. The cruci... | 07/03/2007 |
| 7235139 | Wafer carrier for growing GaN wafers A wafer carrier for growing wafers includes a plate having a first surface and a second surface, a plurality of openings extending from the first surface to the second surface of the plate, and a porous element disposed in each of the plurality of openings, each por... | 06/26/2007 |
| 7235816 | Semiconductor light emitter A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier la... | 06/26/2007 |
| 7229533 | Method of making coated article having low-E coating with ion beam treated and/or formed IR reflecting layer A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. An ion beam is used during at least part of forming an infrared (IR) reflecting layer(s) of such a coated article. Advantageously, this has been fo... | 06/12/2007 |
| 7224532 | Optical uses diamondoid-containing materials Novel optical devices based on diamondoid-containing materials are disclosed. Materials that may be fabricated from diamondoids included diamondoid nucleated CVD films, diamondoid-containing CVD films, molecular crystals, and polymerized materials. Devices that may ... | 05/29/2007 |
| 7194801 | Thin-film battery having ultra-thin electrolyte and associated method A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is suppl... | 03/27/2007 |
| 7189287 | Atomic layer deposition using electron bombardment Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor. ... | 03/13/2007 |
| 7182812 | Direct synthesis of oxide nanostructures of low-melting metals The bulk synthesis of highly crystalline noncatalytic low melting metals such as β-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide n... | 02/27/2007 |
| 7176054 | Method of forming a p-type group II-VI semiconductor crystal layer on a substrate A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a d... | 02/13/2007 |
| 7160529 | Diamondoid-containing field emission devices Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconne... | 01/09/2007 |
| 7135074 | Method for manufacturing silicon carbide single crystal from dislocation control seed crystal A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth surface of the seed crystal. The generation region occupies equal to or... | 11/14/2006 |
| 7131189 | Continuous processing of thin-film batteries and like devices A system for making a thin-film device includes a substrate-supply station that supplies a substrate having a major surface area. The substrate has a first layer on a first surface area of the substrate's major surface area. Also included is a device for depositing ... | 11/07/2006 |
| 7112860 | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices A monolithic electronic device includes a substrate, a semi-insulating, piezoelectric Group III-nitride epitaxial layer formed on the substrate, a pair of input and output interdigital transducers forming a surface acoustic wave device on the epitaxial layer and at ... | 09/26/2006 |
| 7110652 | Optical waveguide and method of manufacture An optical waveguide capable of having various characteristics and a method of manufacture thereof as well as a method of manufacturing a crystal film are provided. An optical functional material KTaxNb1−xO3 is used as an optical w... | 09/19/2006 |
| 7094288 | Method for producing a positively doped semiconductor with large forbidden band A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a ... | 08/22/2006 |
| 7087113 | Textured substrate tape and devices thereof A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary recrystallization temperature of the deformed substrate, and controll... | 08/08/2006 |
| 7077904 | Method for atomic layer deposition (ALD) of silicon oxide film The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process usi... | 07/18/2006 |
| 7060131 | Epitaxy with compliant layers of group-V species The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant, wherein strain relaxation associated with lattice-mismatched epitaxy is sup... | 06/13/2006 |
| 7054140 | Electrolytic capacitor and electrode foil used for electrolytic capacitor There are provided a solid electrolytic capacitor having a low ESR characteristic and an electrode foil to be used for this electrolytic capacitor. In accordance with the present invention, a capacitor element uses an anode foil with a post-etching void factor of no... | 05/30/2006 |
| 7048798 | Silicon carbide single crystal and method and apparatus for producing the same A method of producing a silicon carbide single crystal in which a sublimation raw material 40 is accommodated at the side of vessel body 12 in a graphite crucible 10, placing a seed crystal of a silicon carbide single crystal at the side of cove... | 05/23/2006 |
