Class 117/106 - With pretreatment or preparation of a base (e.g., annealing)

Subclass of Class 117 - Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
Definition: Subject matter in which a base* is prepared or in
No. of patents: 259
Last issue date: 07/01/2008

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Number	Title	Issue Date
7393410	Method of manufacturing nano-wire There is provided a method of manufacturing a nano-wire using a crystal structure. In the method of manufacturing a nano-wire, a crystal grain having a plurality of crystal faces is used as a seed, and a crystal growing material having a lattice constant difference ...	07/01/2008
7377978	Method for producing silicon epitaxial wafer and silicon epitaxial wafer It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze level of the whole rear main surface to 50 ppm or less. A met...	05/27/2008
7367865	Methods for making wafers with low-defect surfaces, wafers obtained thereby and electronic components made from the wafers The electronic semiconductor component has a crystalline wafer substrate with an active surface and a semiconductor layer coating the active surface. So that the semiconductor layer has a few surface defects the crystalline wafer substrate is a sapphire or silicon c...	05/06/2008
7365369	Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co...	04/29/2008
7361220	Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder)...	04/22/2008
7357837	GaN single crystal substrate and method of making the same The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing st...	04/15/2008
7348226	Method of forming lattice-matched structure on silicon and structure formed thereby A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD). ...	03/25/2008
7348278	Method of making nitride-based compound semiconductor crystal and substrate A method of making a nitride-based compound semiconductor crystal has the step of growing a nitride-based compound semiconductor crystal with a predetermined thickness by using a nitride-based compound semiconductor substrate as a seed crystal. The nitride-based com...	03/25/2008
7312480	Semiconductor device and method of fabricating the same A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity c...	12/25/2007
7309527	Hydrophilic surfaces carrying temporary protective covers A substrate carrying a temporary protective cover and related methods of producing and processing substrates are described. In one embodiment, a substrate bears a hydrophilic coating carrying a temporary protective cover that protects the hydrophilic coating against...	12/18/2007
7306674	Nucleation of diamond films using higher diamondoids Novel uses of higher diamondoids are disclosed. Specifically, higher diamondoids may be used to nucleate diamond films and diamond-like carbon films. Such higher diamondoids include iso-tetramantane [1(2)3], anti-tetramantane [121], the two enantiomers of skew-tetra...	12/11/2007
7294404	Graded photocatalytic coatings The invention provides graded photocatalytic coatings. In one aspect, the invention provides a substrate carrying a photocatalytic coating that includes a first graded film region and a second graded film region. The first graded film region has a substantially cont...	11/13/2007
7288791	Epitaxial wafer and method for manufacturing method It is an object of the present invention to provide an epitaxial wafer with fewer pit defects in the epitaxial layer of a silicon monocrystalline wafer that has been doped with arsenic. Pit defects tend to occur when gas etching is performed prior to epitaxial film ...	10/30/2007
7282398	Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconduct...	10/16/2007
7276121	Forming improved metal nitrides Method and apparatus are provided for forming metal nitride (MN), wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and then contacting MI with ammonia to form the MN in a process of reduced or no toxicity. Such method ...	10/02/2007
7228046	Environmentally stable electro-optic device and method for making same A method is provided for stabilizing an electro-optic substrate employed in a waveguide device. The method comprises cleaning a surface of the substrate, and exposing the device to a reactive oxide to passivate the surface. A layer of sealant is deposited on the sub...	06/05/2007
7227189	Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crys...	06/05/2007
7221025	Semiconductor on insulator substrate and devices formed therefrom A semiconductor on insulator (SOI) device is comprised of a layer of a dielectric material having a perovskite lattice, such as a rare earth scandate. The dielectric material is selected to have an effective lattice constant that enables growth of semiconductor mate...	05/22/2007
7211143	Sacrificial template method of fabricating a nanotube Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates ove...	05/01/2007
7211144	Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf...	05/01/2007
7205216	Modification of electrical properties for semiconductor wafers A method and structure for fabricating semiconductor wafers. The method comprises providing a plurality of semiconductor wafers. The plurality of semiconductor wafers comprises a first semiconductor wafer and a second semiconductor wafer. The first semiconductor waf...	04/17/2007
7201803	Valve control system for atomic layer deposition chamber A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication wi...	04/10/2007
7175704	Method for reducing defect concentrations in crystals A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high p...	02/13/2007
7169227	Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO2 substrate using an aluminum halide reactant gas, a gallium halide reactant gas, a...	01/30/2007
7164187	Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device Provided are a semiconductor and semiconductor substrate exhibiting low resistance on the substrate side while exhibiting high resistivity in an epitaxially grown layer formed thereover; a method of manufacturing the same; and a semiconductor device employing this s...	01/16/2007
7147714	Manufacturing method of silicon carbide single crystals When a SiC substrate is heated up to around 1800°C., sublimation of SiC occurs from the SiC substrate. Moreover, temperature of the front surface of the SiC substrate is lower than that of the back surface of the SiC substrate. Therefore, sublimation gas sublimed f...	12/12/2006
7128786	Process for depositing III-V semiconductor layers on a non-III-V substrate This invention relates to a method for depositing III-V semiconductor layers on a non III-V substrate especially a sapphire, silicon or silicon oxide substrate, or another substrate containing silicon. According to said method, a III-V layer, especially a buffer lay...	10/31/2006
7115167	Method of growing a semiconductor multi-layer structure The invention provides a method of growing an (In, Ga)N multiplayer structure by molecular beam epitaxy. Each GaN or InGaN layer in the multilayer structure is grown at a substrate temperature of at least 650° C., and this provides improved material quality. Ammoni...	10/03/2006
7108748	Low temperature load and bake Methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. Advantageously, a short, low temperature process consumes very little of the thermal budget, such that the process is suitable for a...	09/19/2006
7108745	Formation method for semiconductor layer After a Group III-V compound semiconductor layer, to which a p-type dopant has been introduced, has been formed over a substrate, the compound semiconductor layer is annealed. In the stage of heating the compound semiconductor layer, atoms, deactivating the p-type d...	09/19/2006
7101795	Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor depo...	09/05/2006
7094288	Method for producing a positively doped semiconductor with large forbidden band A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a ...	08/22/2006
7090723	Highly anisotropic ceramic thermal barrier coating materials and related composites High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch. ...	08/15/2006
7083996	Nitride semiconductor device and manufacturing method thereof A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal...	08/01/2006
7085616	Atomic layer deposition apparatus A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer sup...	08/01/2006
7077867	Prosthetic knee joint having at least one diamond articulation surface Prosthetic joints, components for prosthetic joints, superhard bearing and articulation surfaces, diamond bearing and articulation surfaces, substrate surface topographical features, materials for making joints, bearing and articulation surfaces, and methods for man...	07/18/2006
7077904	Method for atomic layer deposition (ALD) of silicon oxide film The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process usi...	07/18/2006
7060131	Epitaxy with compliant layers of group-V species The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant, wherein strain relaxation associated with lattice-mismatched epitaxy is sup...	06/13/2006
7048798	Silicon carbide single crystal and method and apparatus for producing the same A method of producing a silicon carbide single crystal in which a sublimation raw material 40 is accommodated at the side of vessel body 12 in a graphite crucible 10, placing a seed crystal of a silicon carbide single crystal at the side of cove...	05/23/2006
7046719	Soft handoff between cellular systems employing different encoding rates A receiver (200) is provided receiving signals from differing base stations (BTSA and BTSB). The signal from BTSA is encoded using a first rate convolutional encoder while the signal transmitted from BTSB is encoded...	05/16/2006

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Class 117/106 - With pretreatment or preparation of a base (e.g., annealing)