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| Number | Title | Issue Date |
| 7767022 | Method of annealing a sublimation grown crystal A crystal is sublimation grown in a crucible by way of a temperature gradient in the presence of between 1 and 200 Torr of inert gas. The pressure of the inert gas is then increased to between 300 and 600 Torr, while the temperature gradient is maintained substantia... | 08/03/2010 |
| 7767021 | Growing method of SiC single crystal A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of α-phase and making a mole fraction of C greater than that of Si in the source, providing th... | 08/03/2010 |
| 7754013 | Apparatus and method for atomic layer deposition on substrates A deposition station allows atomic layer deposition (ALD) of films onto a substrate. The station comprises an upper and a lower substantially flat part between which a substrate is accommodated. The parts are positioned opposite each other and parallel to the substr... | 07/13/2010 |
| 7655090 | Method of controlling stress in gallium nitride films deposited on substrates Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a va... | 02/02/2010 |
| 7540920 | Silicon-containing layer deposition with silicon compounds Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion ... | 06/02/2009 |
| 7435297 | Molten-salt-based growth of group III nitrides A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is ... | 10/14/2008 |
| 7427326 | Minimizing degradation of SiC bipolar semiconductor devices A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segr... | 09/23/2008 |
| 7416606 | Method of forming a layer of silicon carbide on a silicon wafer The invention relates to a method of forming a layer of silicon carbide on a silicone wafer. The method includes the following steps: depositing an anti-carburation mask on the wafer using an essentially-check pattern; performing a carburation step under conditions ... | 08/26/2008 |
| 7393412 | Method for manufacturing compound semiconductor epitaxial substrate A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a step of epitaxially growing an InGaAs layer on an InP single crystal s... | 07/01/2008 |
| 7384481 | Method of forming a rare-earth dielectric layer Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide t... | 06/10/2008 |
| 7384477 | Method for producing a single crystal and a single crystal The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the cryst... | 06/10/2008 |
| 7377978 | Method for producing silicon epitaxial wafer and silicon epitaxial wafer It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze level of the whole rear main surface to 50 ppm or less. A met... | 05/27/2008 |
| 7374617 | Atomic layer deposition methods and chemical vapor deposition methods The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a reaction chamber. At least a fragment of a precursor material is chemisorbe... | 05/20/2008 |
| 7371281 | Silicon carbide single crystal and method and apparatus for producing the same A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course o... | 05/13/2008 |
| 7361220 | Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder)... | 04/22/2008 |
| 7358578 | Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide ... | 04/15/2008 |
| 7335395 | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles Methods of Using Preformed Nanotubes to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to cre... | 02/26/2008 |
| 7327731 | Point-to-multipoint connections for data delivery The present invention provides a technique for achieving reliable delivery of bulk data from a single origin to multiple destinations such that the origin only sends the data once to the network, without waiting for the destinations to be connected to the network. T... | 02/05/2008 |
| 7309394 | Ultraviolet light-emitting device in which p-type semiconductor is used An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impur... | 12/18/2007 |
| 7303632 | Vapor assisted growth of gallium nitride A vapor transport growth process for bulk growth of high quality gallium nitride for semiconductor applications is disclosed. The method includes the steps of heating a gallium nitride source material, a substrate suitable for epitaxial growth of GaN thereon, ammoni... | 12/04/2007 |
| 7304332 | Compound semiconductor epitaxial substrate and method for manufacturing same A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure which comprises an InGaAs layer as a channel layer 9 and an InGaP layer containing n-type impurities as a front side electron supplyin... | 12/04/2007 |
| 7294360 | Conformal coatings for micro-optical elements, and method for making the same A micro-optical element is produced through vapor deposition techniques, such as atomic layer deposition. An optical structure having a surface with uneven structures is exposed to one or more precursor vapors to create a self-limiting film growth on the surface of ... | 11/13/2007 |
| 7282425 | Structure and method of integrating compound and elemental semiconductors for high-performance CMOS A method for fabricating a semiconductor substrate includes epitaxially growing an elemental semiconductor layer on a compound semiconductor substrate. An insulating layer is deposited on top of the elemental semiconductor layer, so as to form a first substrate. The... | 10/16/2007 |
| 7279041 | Atomic layer deposition methods and atomic layer deposition tools An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effect... | 10/09/2007 |
| 7279697 | Field effect transistor with enhanced insulator structure A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the... | 10/09/2007 |
| 7276389 | Article comprising metal oxide nanostructures and method for fabricating such nanostructures This invention discloses novel field emitters which exhibit improved emission characteristics combined with improved emitter stability, in particular, new types of carbide or nitride based electron field emitters with desirable nanoscale, aligned and sharped-tip emi... | 10/02/2007 |
| 7276117 | Method of forming semi-insulating silicon carbide single crystal Embodiments related to a method of forming semi-insulating silicon carbide (SiC) single crystal are disclosed in which shallow donor levels originating, at least in part, from residual nitrogen impurities are compensated by the addition of one or more trivalent elem... | 10/02/2007 |
| 7274835 | Optical waveguide displacement sensor A substrate incorporates a mechanical cantilever resonator with passive integrated optics for motion detection. The resonator acts as a waveguide, and enables optical detection of deflection/displacement amplitude, including oscillations. In one embodiment, the cant... | 09/25/2007 |
| 7258742 | Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus A method of manufacturing KNbO3 single crystal thin film having single-phase high quality and excellent morphology on each of single crystal substrates. A surface acoustic wave element, frequency filter, frequency oscillator, electronics circuit, and elec... | 08/21/2007 |
| 7256110 | Crystal manufacturing method A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a second crystalline layer (a GaN system intermediate layer) and forming ... | 08/14/2007 |
| 7255744 | Low-resistivity -type semiconductor diamond and method of its manufacture Concerns lithium-doped diamond: Low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and a method of manufacturing such diamond are provided. Low-resistivity n-type semiconductor diamond containing 1017 cm−3 or... | 08/14/2007 |
| 7250083 | ALD method and apparatus A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substra... | 07/31/2007 |
| 7250454 | Conductive nanocomposite films Methods for preparing low resistivity nanocomposite layers that simultaneously offer optical clarity, wear resistance and superior functional performance. Nanofillers and a substance having a polymer are mixed. Both low-loaded and highly-loaded nanocomposites are in... | 07/31/2007 |
| 7242044 | Compositions for thin-film capacitance device, high-dielectric constant insulating film, thin-film capacitance device, and thin-film multilayer capacitor A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film ca... | 07/10/2007 |
| 7238734 | Optical filters from nanocomposites Methods for preparing optical filter nanocomposites from nanopowders. Both low-loaded and highly-loaded nanocomposites are included. Nanoscale coated and un-coated fillers may be used. Nanocomposite filter layers may be prepared on substrates. Gradient nanocomposite... | 07/03/2007 |
| 7235131 | Method for forming a single crystalline film A method for forming a single crystalline film including the steps of forming an amorphous film on a single crystalline substrate, forming an opening in the amorphous film and thereby exposing a part of a surface of the substrate, and introducing atomic beams, molec... | 06/26/2007 |
| 7232487 | Method for making an epitaxial germanium temperature sensor A method of making a highly sensitive epitaxial germanium low temperature sensor that is superior in the method of production and performance than those currently available. The geometry and sensitivity of the sensor can be tuned to desired temperature ranges, and s... | 06/19/2007 |
| 7229493 | 3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor ... | 06/12/2007 |
| 7229498 | Nanostructures produced by phase-separation during growth of (III-V)(IV)alloys Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of p... | 06/12/2007 |
| 7220313 | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing ... | 05/22/2007 |
