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...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 7438760 | Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline... | 10/21/2008 |
| 7416604 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface o... | 08/26/2008 |
| 7416605 | Anneal of epitaxial layer in a semiconductor device An anneal of an epitaxially grown crystalline semiconductor layer comprising a combination of group-IV elements. The layer contains at least one of the group of carbon and tin. The layer of epitaxially grown material is annealed at a temperature substantially in a r... | 08/26/2008 |
| 7393412 | Method for manufacturing compound semiconductor epitaxial substrate A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a step of epitaxially growing an InGaAs layer on an InP single crystal s... | 07/01/2008 |
| 7374617 | Atomic layer deposition methods and chemical vapor deposition methods The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a reaction chamber. At least a fragment of a precursor material is chemisorbe... | 05/20/2008 |
| 7371263 | Plasmaless dry contact cleaning method using interhalogen compounds A method of removing an oxide layer from an article. The article may be located in a reaction chamber into which an interhalogen compound reactive with the oxide layer is introduced. A temperature of the reaction chamber may be modified so as to remove the oxide lay... | 05/13/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7361563 | Methods of fabricating a semiconductor device using a selective epitaxial growth technique Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a reaction chamber. A semiconductor source gas and a main etching gas are... | 04/22/2008 |
| 7335569 | In-situ formation of metal insulator metal capacitors The invention describes an in-situ method of fabricating a metal insulator metal (MIM) capacitor and products formed by the same. The method utilizes atomic layer deposition (ALD) or metal-organic chemical vapor deposition (MOCVD). In the method, a metal precursor i... | 02/26/2008 |
| 7303991 | Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ... | 12/04/2007 |
| 7294583 | Methods for the use of alkoxysilanol precursors for vapor deposition of SiOfilms A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more eff... | 11/13/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7271077 | Deposition methods with time spaced and time abutting precursor pulses An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 09/18/2007 |
| 7269343 | Heating configuration for use in thermal processing chambers An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the... | 09/11/2007 |
| 7261777 | Method for fabricating an epitaxial substrate A method for fabricating an epitaxial substrate. The technique includes providing a crystalline or mono-crystalline base substrate, implanting atomic species into a front face of the base substrate to a controlled mean implantation depth to form a zone of weakness w... | 08/28/2007 |
| 7262116 | Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate... | 08/28/2007 |
| 7250083 | ALD method and apparatus A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substra... | 07/31/2007 |
| 7250088 | Directionally solidified columnar grained article and apparatus for manufacture thereof A method and an apparatus for manufacturing a directionally solidified columnar grained article with a reduced amount of secondary misorientation of the columnar grains. The method employs a casting assembly comprising a mold with a cavity, a selector section at a l... | 07/31/2007 |
| 7235482 | Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology An atomic layer deposition method is used to deposit a TiN or TiSiN film having a thickness of about 50 nm or less on a substrat. A titanium precursor which is tetrakis(dimethylamido)titanium (TDMAT), tetrakis(diethylamido)titanium (TDEAT), or Ti{OCH(CH3)... | 06/26/2007 |
| 7235819 | Semiconductor device having group III nitride buffer layer and growth layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 06/26/2007 |
| 7235130 | Apparatus and method for diamond production An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measur... | 06/26/2007 |
| 7232487 | Method for making an epitaxial germanium temperature sensor A method of making a highly sensitive epitaxial germanium low temperature sensor that is superior in the method of production and performance than those currently available. The geometry and sensitivity of the sensor can be tuned to desired temperature ranges, and s... | 06/19/2007 |
| 7229498 | Nanostructures produced by phase-separation during growth of (III-V)(IV)alloys Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of p... | 06/12/2007 |
| 7226509 | Method for fabricating a carrier substrate A method for fabricating a carrier substrate. The technique includes providing a crystalline or mono-crystalline base substrate, growing a stiffening layer on a front face of the base substrate at a thickness sufficient to form a carrier substrate for subsequent pro... | 06/05/2007 |
| 7220669 | Thin films for magnetic device Methods are provided for forming uniformly thin layers in magnetic devices. Atomic layer deposition (ALD) can produce layers that are uniformly thick on an atomic scale. Magnetic tunnel junction dielectrics, for example, can be provided with perfect uniformity in th... | 05/22/2007 |
| 7217903 | Method for purifying gas using plasma discharge A method is provided for purifying gases, particularly gases contaminated by environmentally harmful substances, by way of plasma discharge. The gas to be purified is guided through a thermal plasma, which is generated by electrodeless ignition of a process gas, so ... | 05/15/2007 |
| 7217322 | Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer A method of fabricating an epitaxial silicon-germanium layer for an integrated semiconductor device comprises the step of depositing an arsenic in-situ doped silicon-germanium layer, wherein arsenic and germanium are introduced subsequently into different regions of... | 05/15/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7204886 | Apparatus and method for hybrid chemical processing A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body and a gas distribution assembly disposed on the chamber body. In one embodiment, the method comprises positioning a substrate su... | 04/17/2007 |
| 7192827 | Methods of forming capacitor structures The invention includes a method of forming a capacitor structure. A first electrical node is formed, and a layer of metallic aluminum is formed over the first electrical node. Subsequently, an entirety of the metallic aluminum within the layer is transformed into on... | 03/20/2007 |
| 7189432 | Varying conductance out of a process region to control gas flux in an ALD reactor A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. In one embodiment, instead of varying the gas flux on a substrate in the chamber by controlling the flow of gas upstream of the process chamber, the gas fl... | 03/13/2007 |
| 7176479 | Nitride compound semiconductor element A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire substrate; a second single crys... | 02/13/2007 |
| 7175713 | Apparatus for cyclical deposition of thin films An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases i... | 02/13/2007 |
| 7166883 | Capacitor structures The invention includes a method of forming a capacitor structure. A first electrical node is formed, and a layer of metallic aluminum is formed over the first electrical node. Subsequently, an entirety of the metallic aluminum within the layer is transformed into on... | 01/23/2007 |
| 7166233 | Pulsed plasma processing method and apparatus In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the cham... | 01/23/2007 |
| 7166170 | Cylinder-based plasma processing system A method and system for reducing the cost of a vacuum processing system by utilizing separately fabricated parts for the walls and the tops and bottoms of chambers. Walls are formed from cylinders (e.g., aluminum tubing or rolled ring forgings), and plates are then ... | 01/23/2007 |
| 7166165 | Barrier coating for vitreous materials A chemical vapor deposition apparatus comprises a reaction chamber and one or more vitreous components having an outer surface that is covered at least in part by a devitrification barrier layer. In some arrangements, the one or more vitrious components can include ... | 01/23/2007 |
| 7153361 | Production method of opto-electronic device array An opto-electronic device array is made from a multilayer epitaxial film by the following steps. The multilayer epitaxial film is separated into a plurality of segments. The segments are transferred to a first substrate to be arranged in an array substantially. Acti... | 12/26/2006 |
| 7153362 | System and method for real time deposition process control based on resulting product detection A system and method for real time deposition process control based on resulting product detection, where the system and method detect an amount of at least one reaction product in real time, while the deposition process is being performed, the detected amount of rea... | 12/26/2006 |
