Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8152919 | Epitaxial silicon wafer and fabrication method thereof An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angl... | 04/10/2012 |
| 7736435 | Method of producing single crystal A method for producing a single crystals by preferential epitaxial growth of {100} face, comprising the steps of (1) growing the crystal on a single crystal {100} substrate; (2) forming on the side of the grown crystal a surface parallel to a {100} face different fr... | 06/15/2010 |
| 7713353 | β-GaOsingle crystal growing method, thin-film single crystal growing method, GaOlight-emitting device, and its manufacturing method A method for growing a β-Ga2O3 single includes preparing a β-Ga2O3 seed crystal and growing the β-Ga2O3 single crystal from the β-Ga2O3 seed crystal in a predetermined direct... | 05/11/2010 |
| 7393411 | β-GaOsingle crystal growing method, thin-film single crystal growing method, GaOlight-emitting device, and its manufacturing method A method for growing a β-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3 light-emittin... | 07/01/2008 |
| 7390581 | Vicinal gallium nitride substrate for high quality homoepitaxy A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 ... | 06/24/2008 |
| 7384481 | Method of forming a rare-earth dielectric layer Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide t... | 06/10/2008 |
| 7381267 | Heteroatomic single-crystal layers A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different, including forming, before the epitaxy, in the wafer surface, at least one... | 06/03/2008 |
| 7371647 | Methods of forming transistors The invention encompasses a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nit... | 05/13/2008 |
| 7368014 | Variable temperature deposition methods A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second temperature different from the first temperature, the first layer may b... | 05/06/2008 |
| 7357837 | GaN single crystal substrate and method of making the same The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing st... | 04/15/2008 |
| 7354477 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and... | 04/08/2008 |
| 7341883 | Silicon germanium semiconductive alloy and method of fabricating same A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al2O3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a orientation of the cubic d... | 03/11/2008 |
| 7329590 | Method for depositing nanolaminate thin films on sensitive surfaces The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is redu... | 02/12/2008 |
| 7323256 | Large area, uniformly low dislocation density GaN substrate and process for making the same Large area, uniformly low dislocation density single crystal III-V nitride material, e.g., gallium nitride having a large area of greater than 15 cm2, a thickness of at least 1 mm, an average dislocation density not exceeding 5E5 cm−2, and a ... | 01/29/2008 |
| 7320732 | Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is prepared as a template. The Miller indices h1, k1, h2, k2 of the two grains... | 01/22/2008 |
| 7314519 | Vapor-phase epitaxial apparatus and vapor phase epitaxial method A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a ... | 01/01/2008 |
| 7314526 | Reaction chamber for an epitaxial reactor Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (... | 01/01/2008 |
| 7303632 | Vapor assisted growth of gallium nitride A vapor transport growth process for bulk growth of high quality gallium nitride for semiconductor applications is disclosed. The method includes the steps of heating a gallium nitride source material, a substrate suitable for epitaxial growth of GaN thereon, ammoni... | 12/04/2007 |
| 7303630 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions... | 12/04/2007 |
| 7299535 | Methods for making data storage media and the resultant media Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater... | 11/27/2007 |
| 7294199 | Nitride single crystal and producing method thereof A method of producing a nitride single crystal includes the step of forming a material transport medium layer containing a compound of rare earth element on a surface of a nitride crystal, and the step of making a seed crystal in contact with the material transport ... | 11/13/2007 |
| 7288153 | Method of fabricating orientation film for crystal display device A method of fabricating an orientation film for a liquid crystal display device is provided. The orientation film is formed on a substrate. An ion-beam irradiation apparatus having an ion generator and a vacuum chamber having a stage on which the substrate is dispos... | 10/30/2007 |
| 7279041 | Atomic layer deposition methods and atomic layer deposition tools An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effect... | 10/09/2007 |
| 7270708 | Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer A susceptor (10) supporting a semiconductor substrate (W) in a vapor phase growth, wherein a pocket (11) is formed on an upper surface of the susceptor to arrange the semiconductor substrate (W) inside thereof. The pocket (11) has a two-stage st... | 09/18/2007 |
| 7258928 | Doped YObuffer layers for laminated conductors A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y2O3 and a dopant for blocking cation dif... | 08/21/2007 |
| 7258743 | Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure This invention relates to a process for controlling the orientation of secondary structures (A1, A2) with at least a crystalline part during the transfer of secondary structures from a primary structure (A) on which the secondary structures have an ini... | 08/21/2007 |
| 7258741 | System and method for producing synthetic diamond Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes o... | 08/21/2007 |
| 7235819 | Semiconductor device having group III nitride buffer layer and growth layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 06/26/2007 |
| 7235214 | System and method for measuring molecular analytes in a measurement fluid A molecular contamination monitoring system includes a piezoelectric measurement sensor exposed to a molecular constituent to be measured; a piezoelectric reference sensor; and a filter for filtering said molecular constituent, the filter located between the referen... | 06/26/2007 |
| 7229859 | Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section ... | 06/12/2007 |
| 7226894 | Superconducting wire, method of manufacture thereof and the articles derived therefrom Disclosed herein is method for making a wire comprising contacting a first end of a first superconducting wire with a second end of a second superconducting wire, wherein the superconducting wire comprises a superconducting filament having a superconducting composit... | 06/05/2007 |
| 7226509 | Method for fabricating a carrier substrate A method for fabricating a carrier substrate. The technique includes providing a crystalline or mono-crystalline base substrate, growing a stiffening layer on a front face of the base substrate at a thickness sufficient to form a carrier substrate for subsequent pro... | 06/05/2007 |
| 7217323 | Equipment and method for manufacturing silicon carbide single crystal A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; hea... | 05/15/2007 |
| 7217322 | Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer A method of fabricating an epitaxial silicon-germanium layer for an integrated semiconductor device comprises the step of depositing an arsenic in-situ doped silicon-germanium layer, wherein arsenic and germanium are introduced subsequently into different regions of... | 05/15/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7208043 | Silicon semiconductor substrate and preparation thereof A silicon semiconductor substrate has a structure possessing oxygen precipitate defects fated to form gettering sites in a high density directly below the defect-free region of void type crystals. The silicon semiconductor substrate is formed by heat-treating a sili... | 04/24/2007 |
| 7204886 | Apparatus and method for hybrid chemical processing A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body and a gas distribution assembly disposed on the chamber body. In one embodiment, the method comprises positioning a substrate su... | 04/17/2007 |
| 7201886 | Single crystal diamond tool Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes o... | 04/10/2007 |
| 7198671 | Layered substrates for epitaxial processing, and device A substrate comprising at least two layers which have different thermal expansion coefficients (TECs) is used for subsequent epitaxial growth of semiconductors. A typical example is an epitaxial growth of III-V Nitride (InGaAlBNAsP alloy semiconductor) on sapphire. ... | 04/03/2007 |
| 7186985 | Method and apparatus for fabricating mercuric iodide polycrystalline films for digital radiography A method is provided for fabricating in a thermal evaporation system a polycrystalline film capable of directly detecting radiation. Source material is placed in a container, and the container is evacuated to create vacuum within the container. The source material i... | 03/06/2007 |
