Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7431767 | Apparatus and method for growth of a thin film An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a spec... | 10/07/2008 |
| 7371281 | Silicon carbide single crystal and method and apparatus for producing the same A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course o... | 05/13/2008 |
| 7323051 | One hundred millimeter single crystal silicon carbide wafer A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbi... | 01/29/2008 |
| 7316746 | Crystals for a semiconductor radiation detector and method for making the crystals A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone... | 01/08/2008 |
| 7300519 | Reduction of subsurface damage in the production of bulk SiC crystals The invention is an improvement in a method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. The improvement includes etching the front face on each of a first and second SiC seed to a depth of greater than about 20 ... | 11/27/2007 |
| 7261843 | Photochromic optical article Describes a photochromic article, e.g., an ophthalmic photochromic plastic article, such as a lens, in which the article includes (1) a rigid substrate, e.g., a transparent substrate such as a glass or organic polymeric substrate, as for example, a thermoset or ther... | 08/28/2007 |
| 7235152 | Storage stable, thermofusible, thermosetting adhesive paste A storage stable adhesive paste composition is described. It contains a plurality of first solid particles comprising a surface protected polyisocyanate and a plurality of second solid particles of polymer having functional groups that react with the polyisocyanate.... | 06/26/2007 |
| 7192482 | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals A silicon carbide seeded sublimation growth system and associated method are disclosed. The system includes a crucible, a silicon carbide source composition in the crucible, a seed holder in the crucible, a silicon carbide seed crystal on the seed holder, means for ... | 03/20/2007 |
| 7157102 | Multi-layered microcapsules and method of preparing same A multi-layered microcapsule containing one or more active ingredients and process for preparing the same is disclosed. The multi-layered microcapsule comprises an inner solid microparticle core, typically composed of a biodegradable polymer, and having one or more ... | 01/02/2007 |
| 7141499 | Apparatus and method for growth of a thin film An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a spec... | 11/28/2006 |
| 7135072 | Methods of fabricating silicon carbide crystals Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed... | 11/14/2006 |
| 7125601 | Integrated granule product An integrated granule product that includes a film having a plurality of ceramic coated granules bonded to the film by a cured adhesive. The integrated granule product is generally considered an intermediate product because it is suitable for application onto variou... | 10/24/2006 |
| 7118622 | Organic dyes suitable for use in drugs and cosmetics laked onto a platy titanium dioxide pigment An unsupported platy titanium dioxide pigment containing an organic dye laked thereon. The dyed TiO2 pigment is useful to color cosmetic, food, and drug formulations. ... | 10/10/2006 |
| 7070828 | Process for coating solid particles A process for coating solid particles which comprises the steps of a) contacting a gas with a fluid composition comprising i) a polymer and ii) a liquid diluent to produce a foam, and b) contacting the produced foam with solid particles and agitating the particles t... | 07/04/2006 |
| 7041320 | High drug loaded injectable microparticle compositions and methods of treating opioid drug dependence Methods and compositions to induce opioid drug independence in opioid drug dependent individuals comprising administering opioid agonists and/or antagonists encapsulated in biodegradable polymer microspheres in a dosage formulation. ... | 05/09/2006 |
| 6943387 | Semiconductor device, manufacturing thereof and power amplifier module In a semiconductor device using an emitter top heterojunction bipolar transistor having a planar shape in a ring-like shape, a structure is provided in which a base electrode is present only on an inner side of a ring-like emitter-base junction region. This allows r... | 09/13/2005 |
| 6932866 | Method for depositing in particular crystalline layers The invention relates to a method and a device for depositing especially crystalline layers on especially crystalline substrates in a process chamber of a reactor housing having a water-cooled wall. The floor of said process chamber is heated. At least one reaction ... | 08/23/2005 |
| 6913767 | Compositions for microencapsulation of antigens for use as vaccines Methods and compositions are provided for the encapsulation of antigens in PLGA microspheres for use as vaccines. Such microspheres can also contain adjuvants. Mixtures of microspheres are provided which release antigen at desired intervals to provide boosts with an... | 07/05/2005 |
| 6872253 | Method of forming a semiconductor component The invention relates to a method of forming a semiconductor component comprising the steps of: providing a semiconductor substrate, forming a pattern of pores in the semiconductor substrate, the pores having a fir... | 03/29/2005 |
| 6616757 | Method for achieving low defect density GaN single crystal boules A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter... | 09/09/2003 |
| 6569240 | Dielectric film and method for forming the same After an underlying layer, made of a single crystal metal material, has been formed on a semiconductor layer, part or all of the underlying layer is changed into a metal oxide layer by supplying oxygen thereto from above the underlying layer. Then, a ferr... | 05/27/2003 |
| 6139631 | Crystal growth method and apparatus A crystal growth method having the steps of: preparing a growth container having a vapor generating chamber VC provided with a source material 14, a growth chamber GC provided with a seed crystal 12, and a coupling portion 18 having a cross sectional area... | 10/31/2000 |
| 6132506 | Method for the heat treatment of ZnSe crystal An object of the present invention is to provide a method for the heat treatment of ZnSe crystal whereby the crystal can be prevented from deterioration of crystallinity and caused to have low resistivity without occurrence of precipitates in the crystal.... | 10/17/2000 |
| 6045614 | Method for epitaxial growth of twin-free, (111)-oriented II-VI alloy films on silicon substrates A method is provided for depositing a (111)-oriented heteroepitaxial II-VI alloy film on Si substrates. The (111)-oriented heteroepitaxial II-VI alloy film may comprise II-VI semiconductor and/or II-VI semimetal. As such, the method of the present inventi... | 04/04/2000 |
| 5944891 | Method for the heat treatment of ZnSe crystal An object of the present invention is to provide a method for the heat treatment of a ZnSe crystal whereby the crystal can be prevented from crystallinity deterioration and caused to have low resistivity without occurrence of precipitates in the crystal. ... | 08/31/1999 |
| 5746827 | Method of producing large diameter silicon carbide crystals A method for producing crystals of silicon carbide in a furnace. The furnace has a crucible with a cavity in which the cavity has first and second spaced-apart regions. The crucible cavity of the furnace is capable of being heated, preferably by induction... | 05/05/1998 |
| 5690736 | Method of forming crystal A crystal is formed by applying crystal forming treatment to a substrate, the surface of the substrate being divided into nonnucleation surface exhibiting a small nucleation density and nucleation surface having a sufficeintly small area to allow crystal ... | 11/25/1997 |
| 5215938 | Process to obtain semi-insulating single crystalline epitaxial layers of arsenides and phosphides of metals of the group III of the periodic table useful to make electronic devices The present invention is related to a process to obtain semi-insulating single crystalline epitaxial layers of arsenides and phosphides of metals from group III of the periodic table, mainly Gallium Arsenide (GaAs) and Indium Phosphide (InP) useful for ma... | 06/01/1993 |
| 4869776 | Method for the growth of a compound semiconductor crystal A method for the growth of a compound semiconductor crystal using the sublimation method or the halogen transportation method, comprising maintaining the temperature of a limited portion of the crystal, which has just begun to grow, at a higher level than... | 09/26/1989 |
| 4762576 | Close space epitaxy process A process of high pressure close-space epitaxy in the semi-confined atmosre of a reusable demountable ampule in a furnace growth chamber. The ampule has a substrate and source materials placed therein whereupon the ampule is then loaded in the pressure f... | 08/09/1988 |
| 4717443 | Mass transport of indium phosphide A mass transport process for use in the manufacture of semiconductor devices, particularly but not exclusively low threshold semiconductor lasers in the InP/InGaAsP system, involves the arrangement of a cover wafer (18) of the material to be grown adjacen... | 01/05/1988 |
| 4487813 | Composition control of CSVPE HgCdTe Method for growing HgCdTe (15) upon a CdTe substrate (5) using a HgTe source (3) and close-spaced vapor phase epitaxy (CSVPE). A processing temperature T of between 520° C. and 625° C. is employed over a processing time t of between approximately 1/4 an... | 12/11/1984 |
| 4468278 | Process for mono-crystal growth in a closed tubular chamber The invention relates to the production of mono-crystals. It concerns a process for the growth of at least one mono-crystal in a cylindrical chamber, comprising a source zone and a well zone, heated to different uniform temperatures. By appropriate regula... | 08/28/1984 |
| 4431475 | Process for making doped semiconductors A process for making doped semiconductor bodies in thick sheets by epitaxial growth of a doped monocrystalline semiconductor layer on a substrate body by means of a transfer reaction, the transfer system being so arranged that dead spaces are avoided and ... | 02/14/1984 |
| 4282057 | Vapor growth of mercury iodide for use as high energy detectors The low temperature red form of mercuric iodide is grown by a chemical transport method which introduces organic monomers or polymers during the crystal growth process. Resulting crystals are in the form of platelets which are more directly useful in radi... | 08/04/1981 |
