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| Application No. | Application Title | Issue Date |
| 20120129290 | METHOD FOR FORMING SEMICONDUCTOR NANO-MICRO RODS AND APPLICATIONS THEREOF An embodiment of this invention utilizes ZnO rods as the etching mask to etch a GaN layer arranged below, so that GaN rods are formed. The GaN rods have similar patterns as the ZnO rods. The pattern, size, position, and height of the GaN rods are respectively controlled... | 05/24/2012 |
| 20120108001 | METHOD FOR MANUFACTURING SOLAR CELL Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of I... | 05/03/2012 |
| 20120104460 | OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION Embodiments of the invention generally relate to optoelectronic semiconductor devices such as photovoltaic devices including solar cells. In one aspect, an optoelectronic semiconductor device includes an absorber layer made of gallium arsenide (GaAs) and having only one... | 05/03/2012 |
| 20120080092 | HIGH EFFICIENCY SOLAR CELL DEVICE WITH GALLIUM ARSENIDE ABSORBER LAYER Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light ab... | 04/05/2012 |
| 20120068207 | OPTICAL DEVICE, SEMICONDUCTOR WAFER, METHOD OF PRODUCING OPTICAL DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER Provided is an optical device including a base wafer containing silicon, a plurality of seed crystals disposed on the base wafer, and a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals. At least on... | 03/22/2012 |
| 20120068225 | BISPECTRAL MULTILAYER PHOTODIODE DETECTOR AND METHOD FOR MANUFACTURING SUCH A DETECTOR A bispectral detector comprising upper and lower semiconductor layers of a first conductivity type in order to absorb a first and a second electromagnetic spectrum, separated by an intermediate layer that forms a barrier; semiconductor zones of a second conductivity typ... | 03/22/2012 |
| 20120052620 | MULTI-LAYER N-TYPE STACK FOR CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MAKING Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and an absorber layer (e.g., a cadmium telluride layer) on the multi-layer n-type ... | 03/01/2012 |
| 20120052621 | METHODS OF FORMING A WINDOW LAYER IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE Methods are generally provided for manufacturing such thin film photovoltaic devices via sputtering a mixed phase layer from a target (e.g., at least including CdSOx, where x is 3 or 4) on a transparent conductive oxide layer and depositing a cadmium tellurid... | 03/01/2012 |
| 20120042929 | ELECTRICAL CONTACT A photovoltaic device with a low-resistance stable electrical back contact is disclosed. The photovoltaic device can have a CuTex or CuTexNy layer.... | 02/23/2012 |
| 20120031491 | Single P-N Junction Tandem Photovoltaic Device A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction... | 02/09/2012 |
| 20120025212 | GeSn Infrared Photodetectors Photodiode devices with GeSn active layers can be integrated directly on p+ Si platforms under CMOS-compatible conditions. It has been found that even minor amounts of Sn incorporation (2%) dramatically expand the range of IR detection up to at least 1750 nm and substan... | 02/02/2012 |
| 20120028406 | HYBRID PHOTOVOLTAIC CELLS AND RELATED METHODS Embodiments of the present invention involve photovoltaic (PV) cells comprising a semiconducting nanorod-nanocrystal-polymer hybrid layer, as well as methods for fabricating the same. In PV cells according to this invention, the nanocrystals may serve both as the light-... | 02/02/2012 |
| 20120028407 | MULTI-LAYER N-TYPE STACK FOR CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MAKING Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and a cadmium telluride layer on the multi-layer n-type stack. The multi-layer n-t... | 02/02/2012 |
| 20110315221 | METHODS FOR MAKING THIN FILM POLYCRYSTALLINE PHOTOVOLTAIC DEVICES USING ADDITIONAL CHEMICAL ELEMENT AND PRODUCTS THEREOF Method for making a photovoltaic device and structure thereof. The method includes providing a substrate including a glass layer, a first conductive layer on the glass layer, and a cadmium sulfide layer on the first conductive layer. Additionally, the method includes de... | 12/29/2011 |
| 20110308607 | GROUP III-V SOLAR CELL AND METHOD OF MANUFACTURING THE SAME A Group III-V solar cell and a manufacturing method thereof, wherein, three amorphous silicon layers are formed on a substrate, which includes a first type amorphous silicon layer, an intrinsic amorphous silicon layer, and a second type amorphous silicon layer. The latt... | 12/22/2011 |
| 20110303273 | PHOTOVOLTAIC CELL There is disclosed a photovoltaic cell, such as a solar cell, incorporating one or more epitaxially grown layers of SiGe or another germanium material, substantially lattice matched to GaAs. A GaAs substrate used for growing the layers may be removed by a method which i... | 12/15/2011 |
| 20110303904 | PHOTOVOLTAIC DEVICE AND METHOD OF MAKING SAME A photovoltaic device and method of manufacturing is disclosed. In one embodiment, the device includes a silicon layer and first and second organic layers. The silicon layer has a first face and a second face. First and second electrodes electrically are coupled to the ... | 12/15/2011 |
| 20110297213 | Triple Junction Solar Cell An energy efficient triple junction InGaP/GaAs/Ge solar cell. In one embodiment, the triple junction InGaP/GaAs/Ge solar cell includes: a bottom Ge layer; a first tunnel junction layer above the bottom Ge layer; a middle GaAs layer above the first tunnel junction layer;... | 12/08/2011 |
| 20110291103 | TRENCH SIDEWALL CONTACT SCHOTTKY PHOTODIODE AND RELATED METHOD OF FABRICATION A Schottky photodiode may include a monocrystalline semiconductor substrate having a front surface, a rear surface, and a first dopant concentration and configured to define a cathode of the Schottky photodiode, a doped epitaxial layer over the front surface of the mono... | 12/01/2011 |
| 20110287578 | Method of fabricating bifacial tandem solar cells A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other includin... | 11/24/2011 |
| 20110269261 | DEVICES AND METHODS OF PROTECTING A CADMIUM SULFIDE FOR FURTHER PROCESSING Methods for protecting a cadmium sulfide layer on a substrate are provided. The method can include sputtering a cadmium sulfide layer onto a substrate from a cadmium sulfide target at a sputtering pressure (e.g., about 10 mTorr to about 150 mTorr), and sputtering a cap ... | 11/03/2011 |
| 20110259424 | METHOD OF FABRICATING SOLAR CELLS WITH ELECTRODEPOSITED COMPOUND INTERFACE LAYERS A method of fabricating a solar cell involves electroplating a Group IIB-VIA material as a first or sub-layer over a junction partner layer, and then forming a second layer, also of a Group IIB-VIA material over the sub-layer. Both the sub-layer and the second layer com... | 10/27/2011 |
| 20110250718 | LAMINATION AS A MODULAR APPROACH FOR BUILDING ORGANIC PHOTOSENSITIVE DEVICES There is disclosed a modular lamination approach for processing organic photosensitive devices that allows the individual processing of device components, that once processed are brought together in a final step to make electrical contact. The disclosed method of prepar... | 10/13/2011 |
| 20110248316 | INFRARED DETECTOR WITH EXTENDED SPECTRAL RESPONSE IN THE VISIBLE FIELD A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical con... | 10/13/2011 |
| 20110248315 | STRUCTURED PILLAR ELECTRODES An electrode comprising a plurality of structured pillars dispersed across a base contact and its method of manufacture are described. In one embodiment the structured pillars are columnar structures having a circular cross-section and are dispersed across the base surf... | 10/13/2011 |
| 20110232730 | LATTICE MATCHABLE ALLOY FOR SOLAR CELLS An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced ... | 09/29/2011 |
| 20110227116 | LIGHT-EMITTING DEVICE, LIGHT-RECEIVING DEVICE AND METHOD OF MANUFACTURING THE SAME An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a ... | 09/22/2011 |
| 20110214725 | PHOTOVOLTAIC DEVICE WITH GRADED BUFFER LAYER A photovoltaic device can include a graded bandgap buffer layer.... | 09/08/2011 |
| 20110210313 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufac... | 09/01/2011 |
| 20110203651 | SOLAR CELL AND METHOD FOR FABRICATING THE SAME A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on th... | 08/25/2011 |
| 20110204214 | METHOD AND SYSTEM FOR DETECTING LIGHT A light detection system is disclosed. The system comprises a light absorbing layer made of a semiconductor having majority carriers and minority carriers, and being incorporated with bandgap modifying atoms at a concentration selected so as to allow generation of photo... | 08/25/2011 |
| 20110203666 | HIGH EFFICIENCY SOLAR CELL USING IIIB MATERIAL TRANSITION LAYERS A solar cell including a base of single crystal silicon with a cubic crystal structure and a single crystal layer of a second material with a higher bandgap than the bandgap of silicon. First and second single crystal transition layers are positioned in overlying relati... | 08/25/2011 |
| 20110186910 | METHODS OF PREPARING FLEXIBLE PHOTOVOLTAIC DEVICES USING EPITAXIAL LIFTOFF, AND PRESERVING THE INTEGRITY OF GROWTH SUBSTRATES USED IN EPITAXIAL GROWTH There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein th... | 08/04/2011 |
| 20110189814 | PROCESS FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICES In a process for producing a photoelectric conversion device comprising a bottom electrode layer, a photoelectric conversion semiconductor layer, a buffer layer, and a transparent conductive layer, which are stacked in this order on a substrate, all film forming stages ... | 08/04/2011 |
| 20110180129 | PHOTOVOLTAIC CELL The disclosure relates to multiple quantum well (MQW) structures for intrinsic regions of monolithic photovoltaic junctions within solar cells which are substantially lattice matched to GaAs or Ge. The disclosed MQW structures incorporate quantum wells formed of quatern... | 07/28/2011 |
| 20110174363 | Control of Composition Profiles in Annealed CIGS Absorbers Particular embodiments of the present disclosure relate to the use of sputtering, and more particularly magnetron sputtering, in forming absorber structures, and particular multilayer absorber structures, that are subsequently annealed to obtain desired composition prof... | 07/21/2011 |
| 20110168236 | PORTABLE PHOTOVOLTAICS WITH SCALABLE INTEGRATED CONCENTRATOR OF LIGHT ENERGY A luminescent solar concentrator (LSC) for receiving electromagnetic radiation of at least a first wavelength is disclosed. The LSC includes a core layer. A lower clad layer substantially underlies the core layer. At least one photovoltaic (PV) cell is partially embedde... | 07/14/2011 |
| 20110155207 | SOLAR CELLS AND METHOD OF MAKING SOLAR CELLS A multi junction photovoltaic cell includes at least two P-N junctions electrically connected to each other in series. Each P-N junction includes a P-type absorber layer and a N-type emitter layer, each P-type absorber layer including a plurality of alternating thin fil... | 06/30/2011 |
| 20110146774 | Solar Cell Having Quantum Dot Nanowire Array and the Fabrication Method Thereof The present invention relates to a solar cell having quantum dot nanowire array and the fabrication method thereof. The solar cell according to the present invention includes quantum dot nanowire array with a heterostructure including matrix and semiconductor quantum do... | 06/23/2011 |
| 20110146769 | PHOTOVOLTAIC DEVICE COMPRISING COMPOSITIONALLY GRADED INTRINSIC PHOTOACTIVE LAYER Photovoltaic devices and methods of making photovoltaic devices comprising at least one compositionally graded photoactive layer, said method comprising providing a substrate; growing onto the substrate a uniform intrinsic photoactive layer having one surface disposed u... | 06/23/2011 |
