Bizarre Patents
Mouse device with a built-in printer
A mouse device for use as an input device of a computer is provided that includes a housing in which recording paper is loadable, and a printer unit provided within the housing for printing on the recording paper print information received from the computer.
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| Application No. | Application Title | Issue Date |
| 20090014705 | PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME A phase change memory device is provided. The phase change memory device comprises a substrate. A first conductive layer is formed on the substrate. A heating electrode is formed on the first conductive layer, and electrically connected to the first conductive layer, wh... | 01/15/2009 |
| 20080078983 | Layer structures comprising chalcogenide materials The invention provides a layer structure comprising a first layer, the first layer comprising chalcogenide material, and a second layer being deposited onto the first layer, the second layer comprising silver and another material which decreases the mobility of silver a... | 04/03/2008 |
| 20080073638 | Programmable resistance memory devices and systems using the same and methods of forming the same A programmable resistance memory element and method of forming the same. The memory element includes a first electrode, a dielectric layer over the first electrode and a second electrode over the dielectric layer. The dielectric layer and the second electrode each have ... | 03/27/2008 |
| 20080017842 | Phase change memory cell including nanocomposite insulator A memory cell includes a first electrode, a second electrode, storage material positioned between the first electrode and the second electrode, and a nanocomposite insulator contacting the storage material.... | 01/24/2008 |
| 20070194294 | Phase change memory devices and methods for fabricating the same In a phase change memory, an interlayer insulating layer is disposed on a substrate. A heater plug includes a lower portion disposed in a contact hole penetrating the interlayer insulating layer and an upper portion protruding upward over the top surface of the interlay... | 08/23/2007 |
| 20070187664 | PHASE CHANGE MEMORY CELL WITH HIGH READ MARGIN AT LOW POWER OPERATION A memory cell device includes a first electrode, phase-change material adjacent the first electrode, a second electrode adjacent the phase-change material, a diffusion barrier adjacent the phase-change material, and isolation material adjacent the diffusion barrier for ... | 08/16/2007 |
| 20070158632 | Method for Fabricating a Pillar-Shaped Phase Change Memory Element A method of fabricating a sub-feature size pillar structure on an integrated circuit. The process first provides a substrate having formed thereon a phase change layer, an electrode layer and a hard-mask layer. Then there is formed a feature-size hard-mask, by lithograp... | 07/12/2007 |
| 20070158633 | Method for Forming Self-Aligned Thermal Isolation Cell for a Variable Resistance Memory Array A non-volatile method with a self-aligned RRAM element. The method includes a lower electrode element, generally planar in form, having an inner contact surface. At the top of the device is a upper electrode element, spaced from the lower electrode element. A containmen... | 07/12/2007 |
| 20070131922 | Thin Film Fuse Phase Change Cell with Thermal Isolation Pad and Manufacturing Method A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top... | 06/14/2007 |
| 20070120107 | PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME A phase-change memory device has a phase-change layer, a heater electrode having an end held in contact with the phase-change layer, a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductiv... | 05/31/2007 |
| 20070108430 | Thermally contained/insulated phase change memory device and method (combined) A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed contact surfaces. A phase change memory element is encased within the dielec... | 05/17/2007 |
| 20070045606 | Shaping a phase change layer in a phase change memory cell A phase change memory cell includes a phase change layer of a phase change material on a semiconductor body. A hard mask structure is formed on the phase change layer and a resist mask is formed on the hard mask structure. A hard mask is formed by shaping the hard mask ... | 03/01/2007 |
| 20070045605 | Method for fabricating chalcogenide-applied memory A chalcogenide memory cell includes a lower electrode, a chalcogenide layer, and an upper electrode. The lower electrode includes a tapered cavity. The chalcogenide layer is formed in the tapered cavity of the lower electrode. One side of the chalcogenide layer is adjac... | 03/01/2007 |
| 20070029537 | Phase change memory cell and method of formation A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first electrode. A metal-chalcogenide layer is over the phase change material la... | 02/08/2007 |
| 20070018149 | Semiconductor device and method of producing the same In a semiconductor device, a phase change layer is formed as a side wall and is therefore reduced in volume. Even if the number of times of rewriting is small, the phase change layer is entirely used as a phase change region. Therefore, the phase change region is not in... | 01/25/2007 |
| 20060284160 | SUBLITHOGRAPHIC CONTACT STRUCTURE, IN PARTICULAR FOR A PHASE CHANGE MEMORY CELL, AND FABRICATION PROCESS THEREOF A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of chal... | 12/21/2006 |
| 20060284156 | Phase change memory cell defined by imprint lithography A memory cell includes a first electrode, a second electrode, and a phase-change material between the first electrode and the second electrode. A minimum cross-sectional area of a current path between the first electrode and the second electrode is defined by an imprint... | 12/21/2006 |
| 20060208248 | Nonvolatile nanochannel memory device using organic-inorganic complex mesoporous material A memory device of the current invention includes a memory layer having nanochannels sandwiched between an upper electrode and a lower electrode, in which the memory layer is made of an organic-inorganic complex for use in formation of nanopores, and has metal nanoparti... | 09/21/2006 |
| 20060175596 | Phase change memory cell with high read margin at low power operation The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is... | 08/10/2006 |
| 20060138393 | Ge precursor, GST thin layer formed using the same, phase-change memory device including the GST thin layer, and method of manufacturing the GST thin layer Provided are a Ge precursor for low temperature deposition containing Ge, N, and Si, a GST thin layer doped with N and Si formed using the same, a memory device including the GST thin layer doped with N and Si, and a method of manufacturing the GST thin layer. The Ge pr... | 06/29/2006 |
| 20060131554 | Nonvolatile memory device having two or more resistance elements and methods of forming and using the same A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory... | 06/22/2006 |
| 20060113521 | Chalcogenide memory having a small active region A chalcogenide phase change memory cell has a substrate with a conductor line. The conductor line has a contact end. An insulating layer is located over the substrate and conductor line. An aperture is located in the insulating layer. The aperture extends to the substra... | 06/01/2006 |
| 20060079011 | Methods for marking a bare semiconductor die A method used for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including back grinding in particular. The present method comprises reducing the cross-s... | 04/13/2006 |
| 20060043354 | Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers A chalcogenide layer includes a composition of compounds having the formula MmX1-m, where M denotes one or more elements selected from the group consisting of group IVb elements of the periodic system, group Vb elements of the periodic system and t... | 03/02/2006 |
| 20060001016 | Initializing phase change memories A thin film phase change memory may be provided with a layer which changes between amorphous and crystalline states. The threshold voltage of that layer may be increased in a variety of fashions. As a result of the threshold increase, it is possible to transition cells,... | 01/05/2006 |
| 20050287826 | Method of sealing low-k dielectrics and devices made thereby Methods for sealing porous low-k dielectrics, and devices made thereby, are described, comprising treating the porous low-k dielectrics by atomic layer deposition so as to seal the pores. ALD reactants are chosen in part based on their size, such that they do not deeply... | 12/29/2005 |
| 20050255234 | Method for manufacturing resonator A method for manufacturing a resonator of the present invention includes the steps of (a) forming a resonator film including a piezoelectric film made of piezoelectric material and (b) preparing a resonator substrate for supporting the resonator film. The method further... | 11/17/2005 |
| 20050242339 | Apparatus and method for transverse characterization of materials An apparatus for transverse characterization of materials includes a lower pattern of contacts, separated by spacings, a material, and an upper pattern of a multiplicity of contacts, separated by spacings differing from the spacings of the lower pattern. The transverse ... | 11/03/2005 |
| 20050133778 | Chalcogenide glass constant current device, and its method of fabrication and operation The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately ... | 06/23/2005 |
| 20050127350 | Field emission phase change diode memory A storage cell that may be a memory cell, and integrated circuit (IC) chip including an array of the memory cells and a method of forming the IC. Each storage cell is formed between a top an bottom electrode. Each cell includes a phase change layer that may be a chalcog... | 06/16/2005 |
| 20050104057 | Methods of manufacturing a stressed MOS transistor structure An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in t... | 05/19/2005 |
| 20050067611 | Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data state... | 03/31/2005 |
| 20050029503 | Lateral phase change memory A lateral phase change cell may be formed over a semiconductor substrate. The lateral cell, in some embodiments, may be exposed to light so that the same cell may be addressed by both optical and electrical signals. ... | 02/10/2005 |
| 20050029505 | Phase change access device for memories A memory may have access devices formed using a chalcogenide material. The access device does not induce a snapback voltage sufficient to cause read disturbs in the associated memory element being accessed. In the case of phase change memory elements, the snapback volta... | 02/10/2005 |
| 20050029502 | Processing phase change material to improve programming speed A phase change material may be processed to reduce its microcrystalline grain size and may also be processed to increase the crystallization or set programming speed of the material. For example, material doped with nitrogen to reduce grain size may be doped with titani... | 02/10/2005 |
