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| Application No. | Application Title | Issue Date |
| 20120068311 | SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE A semiconductor substrate having a semiconductor device formable area, wherein a reinforcing part, which is thicker than the semiconductor device formable area and has a top part of which surface is flat, is formed on an outer circumference part of the semiconductor sub... | 03/22/2012 |
| 20120034791 | METHOD OF FLATTENING A RECESS IN A SUBSTRATE AND FABRICATING A SEMICONDUCTOR STRUCTURE A recess is usually formed on the sidewall of the trench due to the dry etch. The recess may influence the profile of an element formed in the trench. Therefore, a method of flattening a recess in a substrate is provided. The method includes: first, providing a substrat... | 02/09/2012 |
| 20110309480 | PROCESS FOR MANUFACTURING POWER INTEGRATED DEVICES HAVING SURFACE CORRUGATIONS, AND POWER INTEGRATED DEVICE HAVING SURFACE CORRUGATIONS According to a process for manufacturing an integrated power device, projections and depressions are formed in a semiconductor body that extend in a first direction and are arranged alternated in succession in a second direction, transversely to the first direction. Fur... | 12/22/2011 |
| 20110284995 | MICROMECHANICAL MEMBRANES AND RELATED STRUCTURES AND METHODS Micromechanical membranes suitable for formation of mechanical resonating structures are described, as well as methods for making such membranes. The membranes may be formed by forming cavities in a substrate, and in some instances may be oxidized to provide desired mec... | 11/24/2011 |
| 20110256733 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film having a predetermined thickness is formed on a substrate in a process vessel by performing a cycle a predetermined... | 10/20/2011 |
| 20110207302 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SUBSTRATE PROCESSING METHOD AND APPARATUS Embodiments described herein relate to improving the quality of a substrate and the performance of a semiconductor device, which is caused by contaminates or particles being engrained into a substrate with a silicon film formed thereon, and forming a silicon film with a... | 08/25/2011 |
| 20110207335 | Constrained Oxidation of Suspended Micro- and Nano-Structures Techniques for preventing bending/buckling of suspended micro/nanostructures during oxidation are provided. In one aspect, a method for oxidizing a structure is provided. The method includes providing the structure having at least one suspended element selected from the... | 08/25/2011 |
| 20110207336 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE A method of manufacturing a semiconductor device according to the present invention includes the steps of: (a) introducing hydrogen and oxygen on a SiC substrate; and (b) subjecting the hydrogen and the oxygen to a combustion reaction on the SiC substrate to form a gate... | 08/25/2011 |
| 20110201210 | FILM FORMATION METHOD, FILM FORMATION APPARATUS, AND METHOD FOR USING FILM FORMATION APPARATUS A film formation method includes a film formation process for forming an SiO2 film on a surface of a target object inside a process container by use of an Si source gas and an oxidizing agent, and an oxidation purge process for performing oxidation on films d... | 08/18/2011 |
| 20110180789 | Hybrid Dielectric Material for Thin Film Transistors Thin-film transistors are made using an organosilicate glass (OSG) as an insulator material. The organosilicate glasses may be SiO2-silicone hybrid materials deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materi... | 07/28/2011 |
| 20110175176 | HIGH-K TRANSISTORS WITH LOW THRESHOLD VOLTAGE A method for forming a semiconductor structure is disclosed. The method includes forming a high-k dielectric layer over a semiconductor substrate and forming a gate layer over the high-k dielectric layer. The method also includes heating the gate layer to 350° C., wher... | 07/21/2011 |
| 20110156222 | Silicon Wafer and Manufacturing Method Thereof Silicon wafers, are manufactured with which a desired strength and electric resistance of a semiconductor device can be obtained. A non-oxidizing heat treatment for oxygen out-diffusion is performed wherein the desired amount of oxygen is discharged from the surface lay... | 06/30/2011 |
| 20110130011 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying ... | 06/02/2011 |
| 20110076857 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing a p... | 03/31/2011 |
| 20110065286 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS At a low temperature of 500° C. to 700° C., the concentration of atomic oxygen is controlled in a wafer stacked direction, and the thickness distribution of oxide films is kept uniform in the wafer stacked direction. A semiconductor device manufacturing method include... | 03/17/2011 |
| 20100267247 | Dual Frequency Low Temperature Oxidation of a Semiconductor Device Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the... | 10/21/2010 |
| 20100233885 | SUBSTRATE PROCESSING METHOD A method for processing a substrate including a processing target layer and an organic film, include: a deposition/trimming process of forming a reinforcement film on a surface of the organic film and, at the same time, trimming a line width of a line portion of the org... | 09/16/2010 |
| 20100221924 | METHODS OF FORMING SIC MOSFETS WITH HIGH INVERSION LAYER MOBILITY Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a ... | 09/02/2010 |
| 20100216317 | Methods for Forming Conformal Oxide Layers on Semiconductor Devices Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Method... | 08/26/2010 |
| 20100210117 | SELECTIVE REMOVAL OF OXYGEN FROM METAL-CONTAINING MATERIALS Oxygen is selectively removed from metal-containing materials in a partially-fabricated integrated circuit. In some embodiments, the partially-fabricated integrated circuit has exposed silicon and metal-containing materials, e.g., as part of a transistor. The silicon an... | 08/19/2010 |
| 20100210118 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS A thin film can be formed on a substrate at a low temperature with a practicable film-forming rate. There is provided a semiconductor device manufacturing method for forming an oxide or nitride film on a substrate. The method comprises: exposing the substrate to a sourc... | 08/19/2010 |
| 20100197146 | Method of heat treating silicon wafer In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting ... | 08/05/2010 |
| 20100181651 | SEALED SEMICONDUCTOR DEVICE A sealed semiconductor device having reduced delamination of the sealing layer in high temperature, high humidity conditions is disclosed. The semiconductor device includes a substrate and a stack of device layers on the substrate sealed with a sealing layer. The upper ... | 07/22/2010 |
| 20100173496 | PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATION TREATMENT A method of forming spacers from a non-silicon oxide, silicon containing spacer layer with horizontal surfaces and sidewall surfaces over a substrate is provided. A plasma oxidation treatment is provided to form a silicon oxide coating over the spacer layer, wherein the... | 07/08/2010 |
| 20100151694 | METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 ... | 06/17/2010 |
| 20100117203 | OXIDE-CONTAINING FILM FORMED FROM SILICON A process for forming an oxide-containing film from silicon is provided that includes heating the silicon substrates to a process temperature of between 250° C. and 1100° C. with admission into the process chamber of diatomic reductant source gas Z-Z′ where Z and Zâ... | 05/13/2010 |
| 20100112824 | METHOD FOR FORMING SILICON OXIDE FILM OF SOI WAFER The invention is a method for forming a silicon oxide film of an SOI wafer, the method by which at least thermal oxidation treatment is performed (a process (A)) on an SOI wafer having an oxide film on the back surface and, after the thermal oxidation treatment, heat tr... | 05/06/2010 |
| 20100090227 | METHOD FOR THE FORMATION OF A GATE OXIDE ON A SIC SUBSTRATE AND SIC SUBSTRATES AND DEVICES PREPARED THEREBY Methods are provided for improving inversion layer mobility and providing low defect density in a semiconductor device based upon a silicon carbide (SiC) substrate. More specifically, embodiments of the present method provide for the formation of a gate oxide on a silic... | 04/15/2010 |
| 20100068895 | Substrate processing apparatus and substrate processing method A substrate processing apparatus includes a processing chamber that processes a substrate, and a substrate placing base enclosed in the processing chamber, and a substrate transporting member that allows the substrate to wait temporarily on the substrate placing base, a... | 03/18/2010 |
| 20100034232 | ELECTRICALLY PUMPED ND3+ DOPED SOLID LASER A laser amplification structure comprising an active medium and at least two electrodes disposed on either side of the active medium, the active medium comprising a first layer of a silicon oxide doped with rare earth ions, wherein the first silicon layer is co-doped wi... | 02/11/2010 |
| 20100029092 | Semiconductor Device Producing Method, Substrate Producing Method and Substrate Processing Apparatus A method is provided with a step of supplying a reacting furnace (200) with a plurality of gases which react each other and an inert gas and oxidizing a substrate (20) under an atmospheric pressure, and a step of carrying out the substrate (20) afte... | 02/04/2010 |
| 20100013017 | Method of manufacturing semiconductor device, and semiconductor device A method of manufacturing a semiconductor device including implanting an element selected from fluorine and nitrogen, over the entire region of a semiconductor substrate; oxidizing the semiconductor substrate to thereby form a first oxide film over the surface of the se... | 01/21/2010 |
| 20100012949 | SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THIN STOICHIOMETRIC FILM OF SILICON NITRIDE, FOR MAKING ELECTRONIC COMPONENTS, AND METHOD FOR OBTAINING SUCH A FILM Substrate, in particular in silicon carbide, covered by a thin film of stoichiometric silicon nitride, for the manufacture of electronic components and method for obtaining said film. To obtain the film on the substrate (1) in the pr... | 01/21/2010 |
| 20100006860 | METHOD FOR IMPROVING INVERSION LAYER MOBILITY IN A SILICON CARBIDE MOSFET A method of manufacturing a semiconductor device based on a SiC substrate (12), comprising the steps of forming (201) an oxide layer (14) on a Si-terminated face of the SiC substrate (12) at an oxidation rate sufficiently high to achieve a ne... | 01/14/2010 |
| 20100009545 | Methods of Fabricating Oxide Layers on Silicon Carbide Layers Utilizing Atomic Oxygen Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature of ... | 01/14/2010 |
| 20100003834 | MRAM Disclosed is a method to convert a low resistance cell in a MRAM device to a capacitive cell. The low resistance cell has a plurality of layers on a substrate. At least one layer remote from the substrate is sensitive to oxygen infusion. The method includes removing a c... | 01/07/2010 |
| 20090311877 | POST OXIDATION ANNEALING OF LOW TEMPERATURE THERMAL OR PLASMA BASED OXIDATION Embodiments of the present invention provide methods of forming oxide layers on semiconductor substrates. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes forming an oxide layer on a substrate using an oxidation process havin... | 12/17/2009 |
| 20090305488 | METHOD OF PRODUCING AN EPITAXIAL LAYER ON SEMICONDUCTOR SUBSTRATE AND DEVICE PRODUCED WITH SUCH A METHOD The invention relates to the manufacture of an epitaxial layer, with the following steps: providing a semiconductor substrate; providing a Si—Ge layer on the semiconductor substrate, having a first depth; —providing the semiconductor substrate with a doped layer wit... | 12/10/2009 |
| 20090294776 | Highly Oxygen-Sensitive Silicon Layer and Method for Obtaining Same Silicon layer highly sensitive to oxygen and method for obtaining said layer. This layer (2), formed on a substrate (4) for example of SiC, has a 3'2 structure. To obtain it, it is possible to substantially uniformly deposit s... | 12/03/2009 |
| 20090273061 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR SUBSTRATE A double-structure silicon on insulator (SOI) substrate with a silicon layer, an insulation film (silicon oxide film), a silicon layer, and an insulation film in this order from the side of the surface. The upper-layer insulation film is formed so as to have a uniform d... | 11/05/2009 |
