Mark Twain (Samuel L. Clemens) received Patent No. 121,992 for "An Improvement in Adjustable and Detachable Straps for Garments." He later received two more patents: one for a self-pasting scrapbook and one for a game to help players remember important historical dates.
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Application No. | Application Title | Issue Date |
| 20120129351 | COMPOSITE REMOVABLE HARDMASK A method and apparatus for forming an amorphous carbon layer on a substrate is provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to... | 05/24/2012 |
| 20120129273 | PHOTOLITHOGRAPHICALLY DEFINED CONTACTS TO CARBON NANOSTRUCTURES Methods for the fabrication of nanostructures, including nanostructures comprised of carbon nanotubes, and the nanostructures, devices, and assemblies prepared by these methods, are described.... | 05/24/2012 |
| 20120108076 | SHOWERHEAD FOR CVD DEPOSITIONS A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showe... | 05/03/2012 |
| 20120107502 | Bisamineazaallylic Ligands And Their Use In Atomic Layer Deposition Methods Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising bisamineazaallylic ligands are provided. Also provided are bisamineazaallylic ligands useful in the methods of the invention and metal coordination complexes compri... | 05/03/2012 |
| 20120108075 | Gas-Phase Functionalization of Surfaces of Microelectronic Structures There are provided methods for functionalizing a planar surface of a microelectronic structure, by exposing the surface to at least one vapor including at least one functionalization species, such as NO2 or CH3ONO, that non-covalently bonds to the ... | 05/03/2012 |
| 20120071001 | VAPORIZING AND FEED APPARATUS AND VAPORIZING AND FEED METHOD A vaporizing and feed apparatus for vaporizing and feeding a solid film-forming raw material comprises a supercritical fluid feeding part for producing and feeding a supercritical fluid, a supercritical fluid adjusting part for dissolving the solid film-forming raw mate... | 03/22/2012 |
| 20120071002 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS A process of manufacturing a semiconductor device may be simplified, and oxidation of a metal element-containing film may be suppressed. The method of manufacturing a semiconductor device includes loading a substrate including a metal element-containing film and an insu... | 03/22/2012 |
| 20120068188 | Defects Annealing and Impurities Activation in III-Nitride Compound Semiconductors A GaN sample in a sealed enclosure is heated very fast to a high temperature above the point where GaN is thermodynamically stable and is then cooled down very fast to a temperature where it is thermodynamically stable. The time of the GaN exposure to a high temperature... | 03/22/2012 |
| 20120070996 | POLAR REGIONS FOR ELECTROSTATIC DE-CHUCKING WITH LIFT PINS An apparatus for electrostatic chucking and dechucking of a semiconductor wafer includes an electrostatic chuck with a number of zones. Each zone includes one or more polar regions around a lift pin that contacts a bottom surface of the semiconductor wafer. The apparatu... | 03/22/2012 |
| 20120070973 | Methods of Forming Diodes Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along... | 03/22/2012 |
| 20120068277 | Semiconductor Manufacturing and Semiconductor Device with semiconductor structure Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.... | 03/22/2012 |
| 20120070999 | REPLACEABLE SUBSTRATE MASKING ON CARRIER AND METHOD FOR PROCESSING A SUBSTRATE A holding device adapted for holding a mask and a substrate during processing is described. The holding device includes a substrate carrier adapted for carrying the substrate; and a mask for masking the substrate, wherein the mask is releasably connected to the substrat... | 03/22/2012 |
| 20120071003 | Vacuum Processing Apparatus, Vacuum Processing Method, and Micro-Machining Apparatus Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged fro... | 03/22/2012 |
| 20120071000 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE A manufacturing apparatus for a semiconductor device, comprising: a reactor chamber configured to load a wafer therein; a gas supplying mechanism configured to supply a process gas into the reactor chamber; a gas discharging mechanism configured to discharge a gas from ... | 03/22/2012 |
| 20120045902 | SHOWERHEAD ELECTRODES AND SHOWERHEAD ELECTRODE ASSEMBLIES HAVING LOW-PARTICLE PERFORMANCE FOR SEMICONDUCTOR MATERIAL PROCESSING APPARATUSES Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a pla... | 02/23/2012 |
| 20120045884 | PROTECTIVE THIN FILMS FOR USE DURING FABRICATION OF SEMICONDUCTORS, MEMS, AND MICROSTRUCTURES A method of protecting a substrate during fabrication of semiconductor, MEMS devices. The method includes application of a protective thin film which typically has a thickness ranging from 3 angstroms to about 1,000 angstroms, wherein precursor materials used to deposit... | 02/23/2012 |
| 20120031332 | Water cooled gas injector A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-... | 02/09/2012 |
| 20120034789 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE A method for manufacturing a semiconductor device includes: performing modifying a surface of a semiconductor wafer including a silanol group on the surface with an alkylsilyl group; and fluorinating an alkyl group of the alkylsilyl group with which the surface was modi... | 02/09/2012 |
| 20120034788 | SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE A substrate treatment apparatus includes a reaction tube and a heater heating a silicon wafer. Trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tubeto generate Al2O3 film on the surface of the wafer. The appa... | 02/09/2012 |
| 20120034786 | Plasma Processing Chamber with Dual Axial Gas Injection and Exhaust An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed ... | 02/09/2012 |
| 20120021604 | Controlling Defects in Thin Wafer Handling A method includes bonding a wafer on a carrier through an adhesive, and performing a thinning process on the wafer. After the step of performing the thinning process, a portion of the adhesive not covered by the wafer is removed, while the portion of the adhesive covere... | 01/26/2012 |
| 20120015459 | Thermal Leveling for Semiconductor Devices A semiconductor device and a method of manufacturing are provided. In some embodiments, a backside annealing process such that a first heat source is placed along a backside of the substrate. In other embodiments, the first heat source is used in combination with an ant... | 01/19/2012 |
| 20120015525 | METHOD OF CLEANING A THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS A method of cleaning a thin film forming apparatus, for removing deposits adhering to an inside thereof after supplying a film-forming gas into a reaction chamber to form a amorphous carbon film on a workpiece, includes a heating operation of heating at least one of an ... | 01/19/2012 |
| 20120009799 | TEMPLATE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND TEMPLATE According to one embodiment, a template manufacturing method is a method for manufacturing a template for use in an imprint processing in which a pattern having irregularities are formed on a principal surface, and the pattern is brought into contact with a resist membe... | 01/12/2012 |
| 20120009798 | STENCIL MASK PROFILE An apparatus and method are provided which allow the low cost patterned deposition of material onto a workpiece. A stencil mask, having chamfered edges is applied to the surface of the workpiece. The material is then deposited onto the workpiece, such as by PECVD. Becau... | 01/12/2012 |
| 20120009800 | MASS PRODUCTION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF ELECTRONIC DEVICE In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual waf... | 01/12/2012 |
| 20120003837 | Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination A plasma processing method of subjecting a substance to plasma processing by using a semiconductor device manufacturing apparatus including a process chamber, a unit for supplying gas to the process chamber, an exhausting unit to reduce pressure in the process chamber, ... | 01/05/2012 |
| 20120003438 | GRAPHENE PROCESSING FOR DEVICE AND SENSOR APPLICATIONS A supported graphene device comprises at least one graphene feature of 1 to about 10 graphene layers having a predetermined shape and pattern, with at least a portion of each graphene feature being supported on a substrate. In some embodiments the device comprises graph... | 01/05/2012 |
| 20110318937 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, METHOD OF CLEANING A PROCESS VESSEL, AND SUBSTRATE PROCESSING APPARATUS A method of manufacturing a semiconductor device includes supplying a process gas into a process vessel accommodating a substrate to form a thin film on the substrate and supplying a cleaning gas into the process vessel to clean an inside of the process vessel, after th... | 12/29/2011 |
| 20110312189 | SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD A substrate treating apparatus is provided. The substrate treating apparatus includes a loading/unloading unit, a process unit in which a substrate treating process is performed, a loadlock unit disposed between the loading/unloading unit and the process unit, and a car... | 12/22/2011 |
| 20110312188 | PROCESSING APPARATUS AND FILM FORMING METHOD A processing apparatus for processing objects, includes: a processing container structure having a bottom opening and including a processing container having a processing space for housing the objects, the container having a nozzle housing area on one side of the proces... | 12/22/2011 |
| 20110312187 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD OF MANUFACTURING APPARATUS FOR SEMICONDUCTOR A manufacturing apparatus for a semiconductor device, including: a reaction chamber configured to perform film formation on a wafer; a process gas supplying mechanism provided in an upper part of the reaction chamber and configured to introduce process gas to an interio... | 12/22/2011 |
| 20110306217 | THIN FILM FORMING APPARATUS AND METHOD According to one embodiment, the thin film forming apparatus includes a boat capable of holding two wafers, in each of which a cutout portion is provided in an outer peripheral edge portion, in a groove portion for holding a wafer in a state where back surfaces face eac... | 12/15/2011 |
| 20110306216 | MASK HOLDING DEVICE A holding device adapted for holding a mask and a substrate during processing of the substrate is provided. The holding device includes a mask frame adapted for supporting the mask and a substrate carrier adapted for carrying the substrate to be processed. The substrate... | 12/15/2011 |
| 20110300716 | METHOD OF IMPROVING FILM NON-UNIFORMITY AND THROUGHPUT Methods, apparatus, and systems for depositing materials with gaseous precursors are provided. In certain implementations, the methods involve providing a wafer substrate to a chamber of an apparatus. The apparatus includes a showerhead to deliver a gas to the chamber, ... | 12/08/2011 |
| 20110294303 | CONFINED PROCESS VOLUME PECVD CHAMBER An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled t... | 12/01/2011 |
| 20110294286 | REVERSE PLANARIZATION METHOD A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a semiconductor feature over the substrate; forming a first photoresist layer over the substrate; performing a lithography process on the first photore... | 12/01/2011 |
| 20110290134 | IMPRINT MASK, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate.... | 12/01/2011 |
| 20110287631 | PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE A plasma processing apparatus and a method of manufacturing a semiconductor device which can prevent a discharge from occurring between a substrate such as a semiconductor wafer or the like, and a base material of a lower electrode or a peripheral structure of the base ... | 11/24/2011 |
| 20110287635 | WAFER CARRIER WITH HUB A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate.... | 11/24/2011 |