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| Application No. | Application Title | Issue Date |
| 20120070997 | GAS SWITCHING SECTION INCLUDING VALVES HAVING DIFFERENT FLOW COEFFICIENT'S FOR GAS DISTRIBUTION SYSTEM A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can suppl... | 03/22/2012 |
| 20120070996 | POLAR REGIONS FOR ELECTROSTATIC DE-CHUCKING WITH LIFT PINS An apparatus for electrostatic chucking and dechucking of a semiconductor wafer includes an electrostatic chuck with a number of zones. Each zone includes one or more polar regions around a lift pin that contacts a bottom surface of the semiconductor wafer. The apparatu... | 03/22/2012 |
| 20120045902 | SHOWERHEAD ELECTRODES AND SHOWERHEAD ELECTRODE ASSEMBLIES HAVING LOW-PARTICLE PERFORMANCE FOR SEMICONDUCTOR MATERIAL PROCESSING APPARATUSES Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a pla... | 02/23/2012 |
| 20120034786 | Plasma Processing Chamber with Dual Axial Gas Injection and Exhaust An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed ... | 02/09/2012 |
| 20120021538 | PLASMA PROCESSING METHOD AND STORAGE MEDIUM There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma... | 01/26/2012 |
| 20120007244 | Backside Processing of Semiconductor Devices A semiconductor device includes a workpiece having a bottom surface opposite the top surface. Metallization layers are disposed over the top surface and a protective layer is disposed over the metallization layers. The semiconductor device further includes a metal silic... | 01/12/2012 |
| 20120003837 | Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination A plasma processing method of subjecting a substance to plasma processing by using a semiconductor device manufacturing apparatus including a process chamber, a unit for supplying gas to the process chamber, an exhausting unit to reduce pressure in the process chamber, ... | 01/05/2012 |
| 20120003836 | MOVABLE GROUND RING FOR A PLASMA PROCESSING CHAMBER A movable ground ring of a movable substrate support assembly is described. The movable ground ring is configured to fit around and provide an RF return path to a fixed ground ring of the movable substrate support assembly in an adjustable gap capacitively-coupled plasm... | 01/05/2012 |
| 20110312167 | PLASMA PROCESSING APPARATUS, AND DEPOSITION METHOD AN ETCHING METHOD USING THE PLASMA PROCESSING APPARATUS A plasma processing apparatus, comprising:
| 12/22/2011 |
| 20110300714 | PLASMA PROCESSING CHAMBER COMPONENT HAVING ADAPTIVE THERMAL CONDUCTOR An assembly comprises a component of a plasma process chamber, a thermal source and a polymer composite therebetween exhibiting a phase transition between a high-thermal conductivity phase and a low-thermal conductivity phase. The temperature-induced phase change polyme... | 12/08/2011 |
| 20110294300 | SELECTIVE ETCH FOR SILICON FILMS A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or... | 12/01/2011 |
| 20110287631 | PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE A plasma processing apparatus and a method of manufacturing a semiconductor device which can prevent a discharge from occurring between a substrate such as a semiconductor wafer or the like, and a base material of a lower electrode or a peripheral structure of the base ... | 11/24/2011 |
| 20110281436 | CLEANING COMPOSITION, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND CLEANING METHOD Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semicon... | 11/17/2011 |
| 20110281437 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE A semiconductor manufacturing apparatus includes a chamber, a gas supplier, a vacuum pump, an electrode, a conductive knitted wire mesh and a radio frequency power supply. The electrode is placed outside of the chamber and fixed to the chamber. The gas supplier supplies... | 11/17/2011 |
| 20110272808 | SEMICONDUCTOR PROCESS AND STRUCTURE A semiconductor process includes the following steps. Firstly, a conductive substrate is provided. Then, at least one insulating pattern is formed on the conductive substrate. Thereafter at least one metal pattern is formed on the insulating pattern. After that, a passi... | 11/10/2011 |
| 20110250758 | PLASMA PROCESSING METHOD OF SEMICONDUCTOR MANUFACTURING APPARATUS Plasma processing methods of a semiconductor manufacturing apparatus which can minimize the amount of impurities adhered to the surface of a wafer, when a desired process using plasma is performed. According to the plasma processing methods of the semiconductor manufact... | 10/13/2011 |
| 20110250759 | Method to Reduce Charge Buildup During High Aspect Ratio Contact Etch A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants ar... | 10/13/2011 |
| 20110244691 | ETCHING PROCESSING METHOD An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processi... | 10/06/2011 |
| 20110237083 | SUBSTRATE PROCESSING METHOD Disclosed is a substrate processing method configured to prevent the occurrence of a bowing shape to form a hole of a vertical processing shape on a mask layer, and to secure a remaining layer quantity as the mask layer. The substrate processing method receives a wafer ... | 09/29/2011 |
| 20110230040 | INDUCTIVELY COUPLED DUAL ZONE PROCESSING CHAMBER WITH SINGLE PLANAR ANTENNA A dual zone plasma processing chamber is provided. The plasma processing chamber includes a first substrate support having a first support surface adapted to support a first substrate within the processing chamber and a second substrate support having a second support s... | 09/22/2011 |
| 20110223750 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS According to an embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes: arranging a semiconductor substrate on a first electrode out of first and second electrodes arranged to be opposed to each other in a vacuum container; apply... | 09/15/2011 |
| 20110217806 | RADIOFREQUENCY PLASMA REACTOR AND METHOD FOR MANUFACTURING VACUUM PROCESS TREATED SUBSTRATES An electrode (3i) of a radiofrequency parallel plate plasma reactor comprises an electrode surface of a multitude of surfaces of metal members (28) which reside on dielectric spacing members (29), whereby the metal members (28) are... | 09/08/2011 |
| 20110212624 | SYSTEM, METHOD AND APPARATUS FOR PLASMA ETCH HAVING INDEPENDENT CONTROL OF ION GENERATION AND DISSOCIATION OF PROCESS GAS A method of etching a semiconductor wafer including injecting a source gas mixture into a process chamber including injecting the source gas mixture into a multiple hollow cathode cavities in a top electrode of the process chamber and generating a plasma in each one of ... | 09/01/2011 |
| 20110207332 | THIN FILM COATED PROCESS KITS FOR SEMICONDUCTOR MANUFACTURING TOOLS A plasma processing apparatus used in semiconductor device manufacturing includes a process kit formed of insulating materials such as quartz and coated with a Y2O3 coating. The Y2O3 coating is a thin film formed using suitabl... | 08/25/2011 |
| 20110183522 | METHOD AND APPARATUS FOR PATTERN COLLAPSE FREE WET PROCESSING OF SEMICONDUCTOR DEVICES A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collap... | 07/28/2011 |
| 20110177694 | Switchable Neutral Beam Source The invention can provide apparatus and methods of processing a substrate in real-time using a switchable quasi-neutral beam system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used in an etch procedure to more ... | 07/21/2011 |
| 20110177695 | SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM A recovery process of a damaged layer and a reducing process of an oxide are performed on a substrate in which the oxide and the damaged layer from which carbon has been eliminated are formed on exposed surfaces of a Cu wiring and a SiCOH film as a low-k film, respectiv... | 07/21/2011 |
| 20110163420 | ASPECT RATIO ADJUSTMENT OF MASK PATTERN USING TRIMMING TO ALTER GEOMETRY OF PHOTORESIST FEATURES A method for adjusting the geometry of photomask patterns is provided. Such adjusted pattern can be employed to achieve pattern doubling in subsequent layers. A patterned photoresist mask is provided over an underlayer. A polymer layer is placed over the mask. The mask ... | 07/07/2011 |
| 20110143546 | ASHING METHOD AND ASHING DEVICE An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma g... | 06/16/2011 |
| 20110143547 | SOLUTION FOR REMOVAL OF RESIDUE AFTER SEMICONDUCTOR DRY PROCESS AND RESIDUE REMOVAL METHOD USING SAME The present invention provides a chemical solution capable of completely removing the residues after a dry process in a short period of time, wherein the chemical solution causes less damage to low-k films than before, and prevents cracking and roughness of the Cu surfa... | 06/16/2011 |
| 20110136346 | Substantially Non-Oxidizing Plasma Treatment Devices and Processes Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication wit... | 06/09/2011 |
| 20110133284 | MULTIPLE CARBON NANOTUBE TRANSFER AND ITS APPLICATIONS FOR MAKING HIGH-PERFORMANCE CARBON NANOTUBE FIELD-EFFECT TRANSISTOR (CNFET), TRANSPARENT ELECTRODES, AND THREE-DIMENSIONAL INTEGRATION OF CNFETS A wafer-scale multiple carbon nanotube transfer process is provided. According to one embodiment of the invention, plasma exposure processes are performed at various stages of the fabrication process of a carbon nanotube device or article to improve feasibility and yiel... | 06/09/2011 |
| 20110130007 | IN-SITU CLEAN TO REDUCE METAL RESIDUES AFTER ETCHING TITANIUM NITRIDE Methods of processing substrates having titanium nitride layers are provided. In some embodiments, a method for processing a substrate having a dielectric layer to be etched, a titanium nitride layer above the dielectric layer, and a patterned photoresist layer above th... | 06/02/2011 |
| 20110117747 | METHOD OF FABRICATING SINGLE CHIP FOR INTEGRATING FIELD-EFFECT TRANSISTOR INTO MEMS STRUCTURE A method of fabricating a single chip for integrating a field-effect transistor into a microelectromechanical systems (MEMS) structure is provided. The method includes the steps of: providing a substrate having thereon at least one transistor structure, a MEMS structure... | 05/19/2011 |
| 20110117748 | Localized Plasma Processing A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and ... | 05/19/2011 |
| 20110104902 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be pro... | 05/05/2011 |
| 20110097900 | QUARTZ WINDOW FOR A DEGAS CHAMBER A five-sided quartz window configured to be mounted on a degas chamber as a UV-transmissive window. The quartz window is made of synthetic quartz and has a uniform thickness. The shape of the quartz window is defined by an upper surface, a lower surface and a sidewall t... | 04/28/2011 |
| 20110097902 | METHOD AND APPARATUS OF HALOGEN REMOVAL A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen r... | 04/28/2011 |
| 20110097901 | DUAL MODE INDUCTIVELY COUPLED PLASMA REACTOR WITH ADJUSTABLE PHASE COIL ASSEMBLY Embodiments of dual mode inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a dual mode inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly ... | 04/28/2011 |
| 20110092072 | HEATING PLATE WITH PLANAR HEATING ZONES FOR SEMICONDUCTOR PROCESSING A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar h... | 04/21/2011 |
