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| Application No. | Application Title | Issue Date |
| 20120104516 | METAL SILICIDE FORMATION Techniques for forming metal silicide contact pads on semiconductor devices are disclosed, and in one exemplary embodiment, a method may comprise depositing a metal layer on and between a plurality of raised silicon-based features formed on a semiconductor substrate, th... | 05/03/2012 |
| 20120104614 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE A semiconductor device manufacturing method which prevents the resistance of a Ni silicide layer from increasing due to an additive element. First, a reaction control layer which contains a metallic element with an atomic number greater than Ni and does not contain Ni i... | 05/03/2012 |
| 20120032238 | CONTACT ETCH STOP LAYERS OF A FIELD EFFECT TRANSISTOR An exemplary structure for a field effect transistor according to at least one embodiment comprises a substrate comprising a surface; a gate structure comprising sidewalls and a top surface over the substrate; a spacer adjacent to the sidewalls of the gate structure; a ... | 02/09/2012 |
| 20120007244 | Backside Processing of Semiconductor Devices A semiconductor device includes a workpiece having a bottom surface opposite the top surface. Metallization layers are disposed over the top surface and a protective layer is disposed over the metallization layers. The semiconductor device further includes a metal silic... | 01/12/2012 |
| 20110306204 | FABRICATING METHOD OF SEMICONDUCTOR DEVICE A fabricating method of a semiconductor device includes forming an interlayer insulation layer on a substrate, the interlayer insulation layer including a storage node contact plug, forming an etch stop layer on the interlayer insulation layer, the etch stop layer inclu... | 12/15/2011 |
| 20110260248 | SOI Wafer and Method of Forming the SOI Wafer with Through the Wafer Contacts and Trench Based Interconnect Structures that Electrically Connect the Through the Wafer Contacts A silicon-on-insulator (SOI) wafer is formed to have through-the-wafer contacts, and trench based interconnect structures on the back side of the SOI wafer that electrically connect the through-the-wafer contacts. In addition, selected ones of the through-the-wafer cont... | 10/27/2011 |
| 20110207317 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a semiconductor substrate containing silicon and having a main surface, first and ... | 08/25/2011 |
| 20110198702 | Contact Formation Method, Semiconductor Device Manufacturing Method, and Semiconductor Device A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided. In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only ... | 08/18/2011 |
| 20110169058 | NICKEL-SILICIDE FORMATION WITH DIFFERENTIAL PT COMPOSITION Embodiments of the invention provide a method of forming nickel-silicide. The method may include depositing first and second metal layers over at least one of a gate, a source, and a drain region of a field-effect-transistor (FET) through a physical vapor deposition (PV... | 07/14/2011 |
| 20110104893 | METHOD FOR FABRICATING MOS TRANSISTOR A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a gate and a source/drain region thereon; forming a Ni—Pt layer on surface of the gate and the source/drain r... | 05/05/2011 |
| 20110086509 | PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma ... | 04/14/2011 |
| 20110086510 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF A semiconductor device relating to the present invention has multiple gate electrodes arranged on a semiconductor substrate at a narrow spacing and an interlayer insulating film covering the gate electrodes. The interlayer insulating film consists of a hygroscopic insul... | 04/14/2011 |
| 20110065274 | ENHANCED METHOD OF FORMING NICKEL SILICIDES Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments.... | 03/17/2011 |
| 20110057317 | Contact plug structure, semiconductor device, and method for forming contact plug A contact plug structure formed on a contact hole of an insulating layer of a semiconductor device includes a metal silicide layer formed on a bottom part of the contact hole of the insulating layer, a manganese oxide layer formed on the metal silicide layer in the cont... | 03/10/2011 |
| 20110001169 | FORMING UNIFORM SILICIDE ON 3D STRUCTURES By using a non-conformal diffusion barrier in conjunction with a similarly deposited non-conformal initial deposition of siliciding material, a substantially uniform and conformal silicide can be formed in a 3D structure such as the fin of a FinFET. The siliciding mater... | 01/06/2011 |
| 20100330758 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device may include forming a first interlayer insulation layer on a substrate including at least one gate structure formed thereon, the substrate having a plurality of source/drain regions formed on both sides of the at least on... | 12/30/2010 |
| 20100304563 | MOSFET STRUCTURE WITH MULTIPLE SELF-ALIGNED SILICIDE CONTACTS A metal oxide semiconductor field effect transistor (MOSFET) structure that includes multiple and distinct self-aligned silicide contacts and methods of fabricating the same are provided. The MOSFET structure includes at least one metal oxide semiconductor field effect ... | 12/02/2010 |
| 20100267232 | Transitional Interface Between Metal and Dielectric in Interconnect Structures An integrated circuit structure and methods for forming the same are provided. The integrated circuit structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; an opening in the dielectric layer; a conductive line in the opening;... | 10/21/2010 |
| 20100216305 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a ruthenium (Ru) film at least on a bottom surface of the opening; and filling in the opening with a tungsten (W) fi... | 08/26/2010 |
| 20100207215 | Semiconductor Device and Method of Producing the Same A semiconductor device includes a semiconductor substrate; an N-channel type transistor forming region formed on the semiconductor substrate; a P-channel type transistor forming region formed on the semiconductor substrate and arranged adjacent to the N-channel type tra... | 08/19/2010 |
| 20100190328 | Self Aligned Silicided Contacts Structures and methods of forming self aligned silicided contacts are disclosed. The structure includes a gate electrode disposed over an active area, a liner disposed over the gate electrode and at least a portion of the active area, an insulating layer disposed over t... | 07/29/2010 |
| 20100167533 | METHOD OF FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE A method of fabricating a semiconductor integrated circuit (IC) device can include forming a first silicide layer on at least a portion of a transistor on a substrate, forming nitrogen in the first silicide layer to form a second silicide layer, forming a first stress l... | 07/01/2010 |
| 20100167485 | Contact Barrier Structure and Manufacturing Methods A semiconductor structure includes a semiconductor substrate; a gate dielectric over the semiconductor substrate; a gate electrode over the gate dielectric; a source/drain region adjacent the gate dielectric; a silicide region on the source/drain region; a metal layer o... | 07/01/2010 |
| 20100167532 | METHOD OF HIGH ASPECT RATIO PLUG FILL A method of plug fill for high aspect ratio plugs wherein a nucleation layer is formed at a bottom of a via and not on the sidewalls. The plug fill is in the direction from bottom to top of the via and not inwards from the sidewalls. The resulting plug is voidless and s... | 07/01/2010 |
| 20100099249 | SELECTIVE SILICIDE FORMATION USING RESIST ETCH BACK Methods of selectively forming metal silicides on a memory device are provided. The methods can include forming a mask layer over the memory device; forming a patterned resist over the mask layer; removing upper portions of the patterned resist; forming a patterned mask... | 04/22/2010 |
| 20100078779 | System on a Chip with On-Chip RF Shield Structures of a system on a chip are disclosed. In one embodiment, the system on a chip (SoC) includes an RF component disposed on a first part of a substrate, a semiconductor component disposed on a second part of the substrate, the semiconductor component and the RF c... | 04/01/2010 |
| 20100035429 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE A fabricating method of a polysilicon layer is disclosed which can be applied for fabricating a semiconductor device such as a SRAM and so on. The method for fabricating the semiconductor device includes the steps of: forming a transistor included in the semiconductor d... | 02/11/2010 |
| 20100003793 | METHOD FOR FORMING SILICIDE IN SEMICONDUCTOR DEVICE A method for forming silicide in a semiconductor device includes simultaneously performing a cleaning process and an etching process to remove a silicide metal layer if an excessive delay in time lapses after forming the silicide metal layer. This may prevent the occurr... | 01/07/2010 |
| 20090305500 | Contact Clean by Remote Plasma and Repair of Silicide Surface Method for recovering treated metal silicide surfaces or layers are provided. In at least one embodiment, a substrate having an at least partially oxidized metal silicide surface disposed thereon is cleaned to remove the oxidized regions to provide an altered metal sili... | 12/10/2009 |
| 20090286393 | METHOD OF FORMING AN ELECTRONIC DEVICE USING A SEPARATION TECHNIQUE A method of forming an electronic device can include forming a patterned layer adjacent to a side of a substrate including a semiconductor material. The method can also include separating a semiconductor layer and the patterned layer from the substrate, wherein the semi... | 11/19/2009 |
| 20090269923 | ADHESION AND ELECTROMIGRATION IMPROVEMENT BETWEEN DIELECTRIC AND CONDUCTIVE LAYERS A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the co... | 10/29/2009 |
| 20090261478 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME The present invention constitutes a semiconductor device wherein a Ni-containing metal silicide layer is formed on a semiconductor substrate and its uppermost surface is nitrided. According to this structure, a dangling bond of silicon existing in the metal silicide lay... | 10/22/2009 |
| 20090233439 | Method of forming an ohmic layer and method of forming a metal wiring of a semiconductor device using the same A metal organic precursor represented by a formula of R1-CpML is provided onto a substrate having a conductive pattern including silicon. Here, R1 is an alkyl group substituent of Cp, R1 including methyl, ethyl, propyl, pentamethyl, pent... | 09/17/2009 |
| 20090194813 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME The semiconductor device comprises a word line and a bit line. The word line comprises a gate electrode and a first metal interconnect. The first metal interconnect has contact with the gate electrode and extends into a region upper than a first impurity-diffused region... | 08/06/2009 |
| 20090170311 | METHOD FOR FABRICATING CONTACT IN SEMICONDUCTOR DEVICE A method for fabricating a contact in a semiconductor device includes forming an insulating film having a contact hole over a bottom film, forming a thin metal film in the exposed portion of the bottom film by supplying a reaction gas containing a metal component to a s... | 07/02/2009 |
| 20090170252 | Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw mate... | 07/02/2009 |
| 20090127594 | MOS TRANSISTORS HAVING NiPtSi CONTACT LAYERS AND METHODS FOR FABRICATING THE SAME MOS transistors and methods for fabricating MOS transistors are provided. One exemplary method comprises providing a silicon substrate having an impurity-doped region disposed at a surface of the silicon substrate. A first layer is sputter-deposited onto the impurity-do... | 05/21/2009 |
| 20090087983 | ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate... | 04/02/2009 |
| 20090081866 | VAPOR DEPOSITION OF TUNGSTEN MATERIALS Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the prod... | 03/26/2009 |
| 20090061609 | METHODS OF FORMING NITRIDE READ ONLY MEMORY AND WORD LINES THEREOF A method of forming word lines of a memory includes providing a substrate and forming a conductive layer on the substrate. A metal silicide layer is formed on the conductive layer, and a mask pattern is formed on the metal silicide layer. A mask liner covering the mask ... | 03/05/2009 |
