Did You Know...
...that Thomas Edison's patent application on his phonograph was approved by the Patent Office in just seven weeks? In contrast, it took Gordon Gould, the inventor of the laser, 30 years to obtain his patent -- finally awarded in 1988!
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| Application No. | Application Title | Issue Date |
| 20120021597 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or aft... | 01/26/2012 |
| 20090200644 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE A semiconductor device includes a semiconductor layer, an electrode connected to the semiconductor layer, a sacrificial metal layer connected to the electrode and made of a metal having higher ionization tendency than the material of the semiconductor layer and the mate... | 08/13/2009 |
| 20090146308 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of... | 06/11/2009 |
| 20090065811 | Semiconductor Device with OHMIC Contact and Method of Making the Same A semiconductor device with ohmic contact is provided with a method of making the same. In one embodiment, a method is provided for fabricating a semiconductor device. The method comprises providing a semiconductor structure with a N-type doped semiconductor contact lay... | 03/12/2009 |
| 20080293231 | Method for forming electrode for Group-III nitride compound semiconductor light-emitting devices A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices includes a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first electrod... | 11/27/2008 |
| 20080206974 | FABRICATION OF SEMICONDUCTOR DEVICE HAVING COMPOSITE CONTACT A method of fabricating a semiconductor device with a composite contact is provided. The fabrication includes forming the composite contact to a semiconductor layer in a semiconductor structure. The composite contact is formed by forming a DC conducting electrode attach... | 08/28/2008 |
| 20080198885 | LOW CREEP METALLIZATION FOR OPTOELECTRONIC APPLICATIONS A metallization on a semiconductor substrate is disclosed in the form of a laminate comprising a plurality of layers of a “conducting” metallization for providing electrical conductivity, interspersed with a plurality of layers of another metallization. By providing... | 08/21/2008 |
| 20080179743 | Electrode, method for producing same and semiconductor device using same There is provided a technology for obtaining an electrode having a low contact resistance and less surface roughness. There is provided an electrode comprising a semiconductor film 101, and a first metal layer 102 and a second metal layer 103 sequen... | 07/31/2008 |
| 20080176391 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE The present invention has an object of providing a method for manufacturing a semiconductor device which can prevent occurrence of pattern abnormality of an electrode and deterioration of an electronic property. The method for manufacturing the semiconductor device incl... | 07/24/2008 |
| 20080108217 | ESD PROTECTION FOR PASSIVE INTEGRATED DEVICES Methods and apparatus are provided for ESD protection of integrated passive devices (IPDs). The apparatus comprises one or more IPDs having terminals or other elements potentially exposed to ESD transients coupled by charge leakage resistances having resistance values m... | 05/08/2008 |
| 20060073692 | Method for forming an electrode In a semiconductor light-emitting device 100, a buffer layer 102, a undoped GaN layer 103, a high carrier concentration n+-layer 104, an n-type layer 105, an emission layer 106, a p-type layer 107, and a p-type... | 04/06/2006 |
