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| Application No. | Application Title | Issue Date |
| 20120125431 | ORGANIC ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME An organic electronic device which does not deteriorate a device function over a long period of time and a method for its manufacture. The organic electronic device, containing: an organic semiconductor element (B) including a pair of electrodes; a layer (C) containing ... | 05/24/2012 |
| 20120126096 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE According to one embodiment, a semiconductor layer in which a photoelectric conversion unit is formed for each pixel, a readout circuit that is formed on a front side of the semiconductor layer and reads out a signal from the photoelectric conversion unit, a light incid... | 05/24/2012 |
| 20120006389 | Method of Manufacturing Photoelectric Conversion Device, Apparatus for Manufacturing Photoelectric Conversion Device, and Photoelectric Conversion Device An embodiment of a method of manufacturing a photoelectric conversion device according to the present invention includes specifying a spot having an abnormal physical property in a structure comprising a photoelectric conversion member, including a semiconductor layer, ... | 01/12/2012 |
| 20110248372 | EPITAXIAL SUBSTRATE FOR SOLID-STATE IMAGING DEVICE WITH GETTERING SINK, SEMICONDUCTOR DEVICE, BACK ILLUMINATED SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor wafer is set in a laser irradiation apparatus, and laser beam irradiation is performed while the semiconductor wafer is moved. At this time, a laser beam emitted from a laser generating apparatus is condensed by a condensing lens so that the condensing p... | 10/13/2011 |
| 20110189805 | METHOD OF PRODUCING SILICON WAFER, EPITAXIAL WAFER AND SOLID STATE IMAGE SENSOR, AND DEVICE FOR PRODUCING SILICON WAFER An object of the present invention is to provide a method of producing a silicon wafer and a method of producing an epitaxial wafer, which enable easily forming a gettering site in a relatively short period of time and effectively suppressing occurrence of dislocation i... | 08/04/2011 |
| 20110143480 | MICROWAVE ANNEAL OF A THIN LAMINA FOR USE IN A PHOTOVOLTAIC CELL A cleave plane is defined in a semiconductor donor body by implanting ions into the wafer. A lamina is cleaved from the donor body, and a photovoltaic cell is formed which comprises the lamina. The implant may cause some damage to the crystal structure of the lamina. Th... | 06/16/2011 |
| 20110136287 | ANNEALING OF SEMI-INSULATING CdZnTe CRYSTALS In a method of annealing a Cd1−xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacu... | 06/09/2011 |
| 20110073869 | METHOD TO REDUCE DISLOCATION DENSITY IN SILICON USING STRESS A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or m... | 03/31/2011 |
| 20110073184 | METHOD FOR MANUFACTURING MONOCRYSTALLINE THIN FILM AND MONOCRYSTALLINE THIN FILM DEVICE MANUFACTURED THEREBY The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline ... | 03/31/2011 |
| 20110053305 | SOLID-STATE IMAGING DEVICE, CAMERA AND METHOD OF PRODUCING THE SOLID-STAE IMAGING DEVICE Producing a solid-state imaging device by (1) forming a structure including (a) a substrate having a first impurity with a first concentration, (b) a first conductive type Si layer and (c) a first conductive type impurity layer stacked on one another in that order, the ... | 03/03/2011 |
| 20110053351 | Solar Cell Defect Passivation Method The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or s... | 03/03/2011 |
| 20110049664 | EPITAXIAL SUBSTRATE FOR BACK-ILLUMINATED IMAGE SENSOR AND MANUFACTURING METHOD THEREOF Provided is an epitaxial substrate for a back-illuminated image sensor and a manufacturing method thereof that is capable of suppressing metal contaminations and reducing occurrence of a white spot defect of the image sensor, by maintaining a sufficient gettering perfor... | 03/03/2011 |
| 20100311199 | METHOD OF PRODUCING EPITAXIAL SUBSTRATE FOR SOLID-STATE IMAGING DEVICE, AND METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE A method of producing an epitaxial substrate for a solid-state imaging device, comprising: forming a gettering sink by injecting laser beam to a semiconductor substrate through one surface thereof, condensing the laser beam to an arbitrarily selected portion of the semi... | 12/09/2010 |
| 20100308262 | COMPOSITE GETTER FOR MANUFACTURING PHOTOVOLTAIC PANELS The present invention refers to a composite getter for thin-film photovoltaic panels which is made with a polymer having low H2O transmission containing one or more alkaline earth metal oxide, to a photovoltaic panel containing such a composite getter and to ... | 12/09/2010 |
| 20100267184 | Methods of manufacturing image sensors including gettering regions Method of manufacturing image sensors having a plurality of gettering regions. In the method, a gate electrode may be formed on a semiconductor substrate. A source/drain region may be formed in the semiconductor substrate to be overlapped with the gate electrode. A gett... | 10/21/2010 |
| 20100261302 | DRY CLEANING OF SILICON SURFACE FOR SOLAR CELL APPLICATIONS A method and apparatus for cleaning layers of solar cell substrates is disclosed. The substrate is exposed to a reactive gas that may comprise neutral radicals comprising nitrogen and fluorine, or that may comprise anhydrous HF and water, alcohol, or a mixture of water ... | 10/14/2010 |
| 20100240165 | METHOD FOR MANUFACTURING SOLAR CELL A manufacturing method of a polycrystalline solar cell is disclosed. A polycrystalline silicon solar cell in accordance with the present invention performs crystallization-annealing amorphous silicon with a metal catalyst so as to reduce a crystallization temperature. T... | 09/23/2010 |
| 20100216274 | Tandem solar cell including an amorphous silicon carbide layer and a multi-crystalline silicon layer A method for making a tandem solar cell includes the steps of providing a ceramic substrate, providing a titanium-based layer on the ceramic substrate, providing an n+-p−-p+ laminate on the titanium-based layer, passivating the n+... | 08/26/2010 |
| 20100201854 | SOLID-STATE IMAGE PICK-UP DEVICE AND MANUFACTURING METHOD THEREOF, IMAGE-PICKUP APPARATUS, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR SUBSTRATE A solid-state image pick-up device is provided which includes a semiconductor substrate main body which has an element forming layer and a gettering layer provided on an upper layer thereof; photoelectric conversion elements, each of which includes a first conductive ty... | 08/12/2010 |
| 20100186803 | BURIED INSULATOR ISOLATION FOR SOLAR CELL CONTACTS The present invention relates to methods and apparatuses for providing a buried insulator isolation for solar cell contacts. According to certain aspects, the invention places a buried oxide under the emitter of a polysilicon emitter solar cell. The oxide provides an ex... | 07/29/2010 |
| 20100102205 | VENTED HEADER ASSEMBLY OF AN IMAGE INTENSIFIER DEVICE An image intensifier device and a method of fabricating the image intensifier device are disclosed. The image intensifier device includes a microchannel plate (MCP) having a thin-film applied to a surface thereof. An anode assembly comprising an image sensor mounted to ... | 04/29/2010 |
| 20100093126 | METHOD FOR MANUFACTURING A POLY-CRYSTAL SILICON PHOTOVOLTAIC DEVICE USING HORIZONTAL METAL INDUCED CRYSTALLIZATION A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less th... | 04/15/2010 |
| 20100087025 | METHOD FOR DEFECT ISOLATION OF THIN-FILM SOLAR CELL This invention discloses a defect isolation method for thin-film solar cell having at least a defect therein. The thin-film solar cell comprises a substrate, a front electrode layer, an absorber layer and a back electrode layer stacked in such a sequence. The defect iso... | 04/08/2010 |
| 20100047953 | METHOD FOR PRODUCING WAFER FOR BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE In the production of a wafer for backside illumination type solid imaging device having a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor formed at its front surface side and a light receiving surface at its back surfa... | 02/25/2010 |
| 20100047952 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE A fragile layer is formed in a single crystal silicon substrate, a first impurity silicon layer is formed on the one surface side in the single crystal silicon substrate, and a first electrode is formed thereover. After one surface of a supporting substrate and the firs... | 02/25/2010 |
| 20100041175 | METHOD OF PURIFYING A CRYSTALLINE SILICON SUBSTRATE AND PROCESS FOR PRODUCING A PHOTOVOLTAIC CELL The invention relates to a method of purifying a crystalline silicon substrate and to a process for producing a photovoltaic cell. The method of purifying a crystalline silicon substrate according to the invention is of the type that includes a step of extracting impuri... | 02/18/2010 |
| 20090269875 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE An embrittlement layer is formed in the single crystal semiconductor substrate and a first impurity semiconductor layer, a first electrode, and an insulating layer are formed on one surface of the single crystal semiconductor substrate. After attaching the insulating la... | 10/29/2009 |
| 20090253225 | METHOD OF PROCESSING A SEMICONDUCTOR SUBSTRATE BY THERMAL ACTIVATION OF LIGHT ELEMENTS Method of processing a substrate containing at least one semiconductor of the SiXAY type and comprising at least four separate types of light elements, comprising at least the following steps:
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| 20080157241 | Semiconductor wafer pre-process annealing & gettering method and system for solar cell formation Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant... | 07/03/2008 |
| 20080038861 | Support with integrated deposit of gas absorbing material for manufacturing microelectronic microoptoelectronic or micromechanical devices The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the in... | 02/14/2008 |
| 20070272864 | Uncooled Cantilever Microbolometer Focal Plane Array with Mk Temperature Resolutions and Method of Manufacturing Microcantilever A microbolometer sensor has a first cantilever supported above a substrate and formed of a bimaterial so as to deform in a first direction in response to incident radiation, and a second cantilever supported above the substrate and formed of a bimaterial so oriented as ... | 11/29/2007 |
| 20070131278 | Electrode stacks for electroactive devices and methods of fabricating the same A cathode stack with a getter layer is disclosed. The cathode stack includes an electron injection layer, a capping layer and a getter layer. An organic electroactive device including a cathode stack with a getter layer is also presented. A method of fabricating an elec... | 06/14/2007 |
| 20050255626 | Method of manufacturing semiconductor device A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is no... | 11/17/2005 |
