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| Application No. | Application Title | Issue Date |
| 20120125916 | TEMPERATURE CONTROL DEVICE FOR OPTOELECTRONIC DEVICES Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semicondu... | 05/24/2012 |
| 20120049314 | Thermoelectric module and method for fabricating the same The present invention relates to a thermoelectric module. The thermoelectric module includes a first substrate and a second substrate opposed to each other and arranged to be separated from each other, a first electrode and a second electrode arranged in the inside surf... | 03/01/2012 |
| 20120049316 | THERMOELECTRIC MODULE AND METHOD FOR FABRICATING THE SAME The present invention provides a thermoelectric module. The thermoelectric module includes a first substrate and a second substrate opposed to each other and arranged to be separated from each other, a first electrode and a second electrode arranged in the inside surfac... | 03/01/2012 |
| 20120049315 | Thermoelectric module and method for fabricating the same The present invention provides a thermoelectric module. The thermoelectric module includes a first substrate and a second substrate opposed to each other and arranged to be separated from each other, a first electrode and a second electrode arranged in an inside surface... | 03/01/2012 |
| 20120024335 | MULTI-LAYERED THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME The present invention provides a multi-layered thermoelectric device and a method of manufacturing the same. The method for manufacturing a multi-layered thermoelectric device includes the steps of: forming a P-type semiconductor and an N-type semiconductor in a sheet t... | 02/02/2012 |
| 20120025343 | THERMOELECTRIC DEVICE HAVING A VARIABLE CROSS-SECTION CONNECTING STRUCTURE A thermoelectric device having a variable cross-section connecting structure includes a first electrode, a second electrode, and a connecting structure connecting the first electrode and the second electrode. The connecting structure has a first section and a second sec... | 02/02/2012 |
| 20120025276 | TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING A PN JUNCTION BASED ON SILICON/GERMANIUM MATERIALS By incorporating germanium material into thermal sensing diode structures, the sensitivity thereof may be significantly increased. In some illustrative embodiments, the process for incorporating the germanium material may be performed with high compatibility with a proc... | 02/02/2012 |
| 20120017964 | Apparatus, System, and Method for On-Chip Thermoelectricity Generation An apparatus, system, and method for a thermoelectric generator. In some embodiments, the thermoelectric generator comprises a first thermoelectric region and a second thermoelectric region, where the second thermoelectric region may be coupled to the first thermoelectr... | 01/26/2012 |
| 20120017962 | PROCESS FOR GENERATING ELECTRICAL ENERGY IN A SEMICONDUCTOR DEVICE AND THE CORRESPONDING DEVICE Electrical energy is generated in a device that includes an integrated circuit which produces thermal flux when operated. A substrate supports the integrated circuit. A structure is formed in the substrate, that structure having a semiconductor p-n junction thermally co... | 01/26/2012 |
| 20120021551 | THERMOELECTRIC CONVERSION MODULE AND METHOD FOR MANUFACTURING THE SAME A compact, high-performance thermoelectric conversion module includes a laminate having a plurality of insulating layers, p-type thermoelectric semiconductors and n-type thermoelectric semiconductors formed by a technique for manufacturing a multilayer circuit board, pa... | 01/26/2012 |
| 20120007205 | INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the hea... | 01/12/2012 |
| 20120003771 | Method for Producing Thermoelectric Module A method for producing a thermoelectric module comprises steps of positioning electrodes (4) on a pair of current-supplying/pressing members (2) arranged to face each other, at their surfaces facing each other; arranging a plurality of thermoelectric eleme... | 01/05/2012 |
| 20110315880 | TERAMOS-TERAHERTZ THERMAL SENSOR AND FOCAL PLANE ARRAY A TeraMOS sensor based on a CMOS-SOI-MEMS transistor, thermally isolated by the MEMS post-processing, designed specifically for the detection of THz radiation which may be directly integrated with the CMOS-SOI readout circuitry, in order to achieve a breakthrough in per... | 12/29/2011 |
| 20110315985 | SENSOR-FITTED SUBSTRATE AND METHOD FOR PRODUCING SENSOR-FITTED SUBSTRATE A sensor-fitted substrate allowing a sensor-fitted wafer for measuring the temperature or strain to be produced inexpensively, moreover, allowing measurements of the temperature or strain to be carried out with satisfactory accuracy, and a method for producing such a se... | 12/29/2011 |
| 20110315981 | Microbolometer for infrared detector or Terahertz detector and method for manufacturing the same A microbolometer includes a micro-bridge structure for uncooling infrared or terahertz detectors. The thermistor and light absorbing materials of the micro-bridge structure are the vanadium oxide-carbon nanotube composite film formed by one-dimensional carbon nanotubes ... | 12/29/2011 |
| 20110309463 | ELECTROCALORIC EFFECT MATERIALS AND THERMAL DIODES Examples are generally described that include a substrate, an electrocaloric effect material at least partially supported by the substrate, and a thermal diode at least partially supported by the electrocaloric effect material.... | 12/22/2011 |
| 20110304004 | THERMOELECTRIC ELEMENT MODULE AND MANUFACTURING METHOD A thermoelectric element module has P-type thermoelectric materials and N-type thermoelectric materials alternately joined between a pair of substrates. The thermoelectric materials include a thermoelectric mixture powder in which a thermoelectric material powder and a ... | 12/15/2011 |
| 20110298080 | METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MODULE, AND THERMOELECTRIC CONVERSION MODULE There is provided a method for manufacturing a thermoelectric conversion module that can yield a thermoelectric conversion module with a high insulating property and high density without requiring positioning of the thermoelectric conversion elements, as well as a therm... | 12/08/2011 |
| 20110290293 | Thermoelectric module and method for manufacturing the same Disclosed herein is a thermoelectric module. The thermoelectric module includes: first and second substrates that are disposed to be separated from each other, facing each other and includes first and second grooves each formed on inner sides thereof; first and second e... | 12/01/2011 |
| 20110290294 | DEVICE FOR CONVERTING ENERGY AND METHOD FOR MANUFACTURING THE DEVICE, AND ELECTRONIC APPARATUS WITH THE DEVICE The present invention provides an energy converting device, which includes: a base substrate; and a plurality of thermoelectric element structures which are sequentially stacked on the base substrate and electrically interconnected in parallel to one another.... | 12/01/2011 |
| 20110294246 | SILICON DIOXIDE CANTILEVER SUPPORT AND METHOD FOR SILICON ETCHED STRUCTURES An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etch... | 12/01/2011 |
| 20110284048 | MULTI-LAYER SUPERLATTICE QUANTUM WELL THERMOELECTRIC MATERIAL AND MODULE A multi-layer superlattice quantum well thermoelectric material comprising at least 10 alternating layers has a layer thickness of each less than 50 nm, the alternating layers being electrically conducting and barrier layers, wherein the layer structure shows no discern... | 11/24/2011 |
| 20110284049 | THERMOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS In order to achieve a thermoelectric transducer exhibiting a higher conversion efficiency and an electronic apparatus including such a thermoelectric transducer, a thermoelectric conversion device is provided, including a semiconductor stacked structure including semico... | 11/24/2011 |
| 20110266516 | PHASE CHANGE MEMORY DEVICE CAPABLE OF REDUCING DISTURBANCE AND METHOD OF MANUFACTURING THE SAME A phase change memory device includes a plurality of word lines, a plurality of bit lines disposed to be crossed with the plurality of word lines, switching devices disposed at intersections of the plurality of word lines and the plurality of bit lines, heating electrod... | 11/03/2011 |
| 20110254653 | MULTILAYERED STRUCTURE A thermistor structure includes a multilayer structure of at least one quantum layer surrounded by barrier layers in a multilayer structure. The quantum layer includes Ge and may be in the form of either a quantum well or quantum dots. The barrier layer is a carbon-dope... | 10/20/2011 |
| 20110248374 | UNCOOLED INFRARED DETECTOR AND METHODS FOR MANUFACTURING THE SAME This disclosure discusses various methods for manufacturing uncooled infrared detectors by using foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafers, each of which may include a substrate layer, an insulation layer having a p... | 10/13/2011 |
| 20110241153 | METHOD FOR THIN FILM THERMOELECTRIC MODULE FABRICATION Methods of fabrication of a thermoelectric module from thin film thermoelectric material are disclosed. In general, a thin film thermoelectric module is fabricated by first forming an N-type thin film thermoelectric material layer and one or more metallization layers on... | 10/06/2011 |
| 20110241155 | SEMICONDUCTOR THERMOCOUPLE AND SENSOR Conventional “on-chip” or monolithically integrated thermocouples are very mechanically sensitive and are expensive to manufacture. Here, however, thermocouples are provided that employ different thicknesses of thermal insulators to help create thermal differentials... | 10/06/2011 |
| 20110240082 | THERMOELECTRIC MATERIALS BASED ON SINGLE CRYSTAL AlInN-GaN GROWN BY METALORGANIC VAPOR PHASE EPITAXY The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template o... | 10/06/2011 |
| 20110233408 | PYROELECTRIC DETECTOR AND METHOD FOR MANUFACTURING SAME, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT A pyroelectric detector includes a pyroelectric detection element, a support member, a fixing part and a first reducing gas barrier layer. A first side of the support member faces a cavity and the pyroelectric detection element is mounted and supported on a second side ... | 09/29/2011 |
| 20110226303 | METHOD OF MANUFACTURING THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION ELEMENT P-type semiconductor sheets and n-type semiconductor sheets formed by mixing a powder of semiconductor material, a binder resin, a plasticizer, and a surfactant are prepared. In addition, separator sheets formed by mixing a resin such as PMMA and a plasticizer are prepa... | 09/22/2011 |
| 20110227040 | TEMPERATURE SENSOR AND MANUFACTURING METHOD OF TEMPERATURE SENSOR A temperature sensor includes a semiconductor substrate and a quantum well structural part disposed on the semiconductor substrate. The semiconductor substrate is made of a plurality of elements. The quantum well structural part has a resistance value that changes with ... | 09/22/2011 |
| 20110220164 | ENHANCED METAL-CORE THERMOELECTRIC COOLING AND POWER GENERATION DEVICE In various embodiments of the present invention, a thermoelectric device is provided. The thermoelectric device includes one or more thermoelements that transfer heat across the ends of the thermoelectric device. A method for creating the thermoelectric device includes ... | 09/15/2011 |
| 20110220165 | THERMOELECTRIC DEVICE INCLUDING THERMOELECTRIC BODY INCLUDING VACANCY CLUSTER A thermoelectric device includes: a first region; a second region; and a thermoelectric body disposed between the first region and the second region, where the thermoelectric body includes a vacancy.... | 09/15/2011 |
| 20110217804 | THERMALLY ACTIVATED MICROMIRROR AND FABRICATION METHOD A method for fabricating a micromirror in a wafer, including the steps of: depositing and etching layers forming two arms; etching the wafer such that in the back face only a thin portion of the wafer remains in the region of formation of the micromirror and the arms; p... | 09/08/2011 |
| 20110217805 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME A method of manufacturing a semiconductor device is disclosed. The method comprises: applying a sensing layer with variation in a secondary attribute according to heat, on a handle wafer; patterning the sensing layer, thus forming a cavity; forming a sensing part patter... | 09/08/2011 |
| 20110210416 | POLARIZATION ALIGNED AND POLARIZATION GRADED THERMOELECTRIC MATERIALS AND METHOD OF FORMING THEREOF Exemplary embodiments of the invention include a thermoelectric material having an aligned polarization field along a central axis of the material. Along the axis are a first atomic plane and a second atomic plane of substantially similar area. The planes define a first... | 09/01/2011 |
| 20110210414 | Infrared sensor An infrared sensor according to the present invention includes a semiconductor substrate, a thin-film pyroelectric element made of lead titanate zirconate and disposed on the semiconductor substrate, a coating film coating the pyroelectric element and having a topmost s... | 09/01/2011 |
| 20110197942 | THIN-FILM THERMO-ELECTRIC GENERATOR AND FABRICATION METHOD THEREOF For the thin-film thermo-electric generator and fabrication method of this invention, a P-type thermo-electric thin-film layer, an insulating thin-film layer and a N-type thermo-electric thin-film layer is deposited on a substrate to form a three-layer PN junction, mult... | 08/18/2011 |
| 20110198498 | THERMOELECTRIC DEVICE AND METHOD OF FORMING THE SAME, TEMPERATURE SENSING SENSOR, AND HEAT-SOURCE IMAGE SENSOR USING THE SAME Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thi... | 08/18/2011 |
