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| Application No. | Application Title | Issue Date |
| 20120025195 | Confined Lateral Growth of Crystalline Material In a structure for crystalline material growth, there is provided a lower growth confinement layer and an upper growth confinement layer that is disposed above and vertically separated from the lower growth confinement layer. A lateral growth channel is provided between... | 02/02/2012 |
| 20120021591 | Method of Manufacturing Nitride Substrate for Semiconductors In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 ... | 01/26/2012 |
| 20110312167 | PLASMA PROCESSING APPARATUS, AND DEPOSITION METHOD AN ETCHING METHOD USING THE PLASMA PROCESSING APPARATUS A plasma processing apparatus, comprising:
| 12/22/2011 |
| 20110300695 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the proces... | 12/08/2011 |
| 20110269301 | MANUFACTURING METHOD OF SINGLE CRYSTAL SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF ELECTRODE To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor film 11 having compression stress is formed over a surface of a single crystal semiconductor substrate 10 by a vapo... | 11/03/2011 |
| 20110223749 | METHOD OF FORMING NITRIDE SEMICONDUCTOR EPITAXIAL LAYER AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×107 cm<... | 09/15/2011 |
| 20110140122 | LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME Large area single crystal III-V nitride material having an area of at least 2 cm2, having a uniformly low dislocation density not exceeding 3×106 dislocations per cm2 of growth surface area, and including a plurality of distinct regions... | 06/16/2011 |
| 20110117732 | CYCLICAL EPITAXIAL DEPOSITION AND ETCH Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Be... | 05/19/2011 |
| 20110089520 | GROWTH OF MONOCRYSTALLINE GeN ON A SUBSTRATE The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550° C. and 940° C., ... | 04/21/2011 |
| 20110081771 | MULTICHAMBER SPLIT PROCESSES FOR LED MANUFACTURING Embodiments described herein generally relate to methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and/or hydride vapor phase epitaxial (HVPE) processes. In one embodiment, deposition of a group III1-N laye... | 04/07/2011 |
| 20110059599 | Graphene Nanoelectric Device Fabrication Embodiments of the present invention provide methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices. Embodiments of the present invention also provide method... | 03/10/2011 |
| 20110053359 | METHODS OF MANUFACTURING QUANTUM WELL MATERIALS Processes for economical large scale commercial production of blocks of quantum well particles, platelets, or continuous sheets of material imparting minimal or essentially no parasitic substrate loss in quantum well devices such as thermoelectric generators in which th... | 03/03/2011 |
| 20110018103 | SYSTEM AND METHOD FOR TRANSFERRING SUBSTRATES IN LARGE SCALE PROCESSING OF CIGS AND/OR CIS DEVICES According to an embodiment, the present invention provide method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure, each of the su... | 01/27/2011 |
| 20100327314 | Insulated Gate Bipolar Transistor (IGBT) Collector Formed with Ge/A1 and Production Method This invention discloses an IGBT device with its collector formed with Ge/Al and associated method of fabrication. The collector is formed on the substrate layer, which is on the back of IGBT, and contains Ge and Al thin films. After thinning and etching the back side o... | 12/30/2010 |
| 20100323506 | Method for fabricating semiconductor substrates and semiconductor devices A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening exposes the interface between the semiconductor layer and the foreign subs... | 12/23/2010 |
| 20100313948 | Photovoltaic Device and Manufacturing Method Thereof A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode,... | 12/16/2010 |
| 20100314661 | SEMICONDUCTOR SUBSTRATE, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME The present invention provides a fabrication method of a semiconductor substrate, by which a planar GaN substrate that is easily separated can be fabricated on a heterogeneous substrate, and a semiconductor device which is fabricated using the GaN substrate. The semicon... | 12/16/2010 |
| 20100308344 | METHOD FOR GROWING P-TYPE SIC SEMICONDUCTOR SINGLE CRYSTAL AND P-TYPE SIC SEMICONDUCTOR SINGLE CRYSTAL In a method for growing a p-type SiC semiconductor single crystal on a SiC single crystal substrate, using a first solution in which C is dissolved in a melt of Si, a second solution is prepared by adding Al and N to the first solution such that an amount of Al added is... | 12/09/2010 |
| 20100279495 | METHOD OF FORMING p-TYPE GALLIUM NITRIDE BASED SEMICONDUCTOR, METHOD OF FORMING NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FORMING EPITAXIAL WAFER A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region 17 containing a p-type dopant is for... | 11/04/2010 |
| 20100273320 | DEVICE AND METHOD FOR SELECTIVELY DEPOSITING CRYSTALLINE LAYERS USING MOCVD OR HVPE The invention relates to a device for depositing one or more layers, in particular crystalline layers, on one or more substrates, in particular crystalline substrates (6), which are situated on a susceptor (3) in a process chamber (2) of a reactor (... | 10/28/2010 |
| 20100270583 | MANUFACTURING METHOD OF NITRIDE SEMI-CONDUCTOR LAYER, AND A NITRIDE SEMI-CONDUCTOR LIGHT EMITTING DEVICE WITH ITS MANUFACTURING METHOD In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N (0<a<1, 0<b<1, 1−a−b>0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phas... | 10/28/2010 |
| 20100261341 | METHOD FOR MANUFACTURING EPITAXIAL WAFER An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the ... | 10/14/2010 |
| 20100248461 | Method of growing GaN using CVD and HVPE A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epi... | 09/30/2010 |
| 20100240198 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE A method for fabricating a semiconductor device includes growing an AlN layer by MOVPE in which a nitrogen-source flow ratio at a far side from a substrate is set lower than that at a near side, the nitrogen-source flow ratio being a ratio of a flow rate of a nitrogen s... | 09/23/2010 |
| 20100197123 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE A semiconductor device includes a device isolation structure formed on a semiconductor substrate to define an active region. A first Si-based epitaxial pattern is formed over the active region corresponding to a bit line contact region and a portion of a gate region at ... | 08/05/2010 |
| 20100159679 | MANUFACTURING METHOD FOR EPITAXIAL WAFER To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial waf... | 06/24/2010 |
| 20100148212 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT- EMITTING DEVICE The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing... | 06/17/2010 |
| 20100144130 | THIN-FILM DEPOSITION AND RECIRCULATION OF A SEMI-CONDUCTOR MATERIAL A process for coating a substrate at atmospheric pressure is disclosed, the process comprising the steps of vaporizing a mass of semiconductor material within a heated inert gas stream to create a fluid mixture having a temperature above the condensation temperature of ... | 06/10/2010 |
| 20100133658 | NITRIDE SEMICONDUCTOR COMPONENT LAYER STRUCTURE ON A GROUP IV SUBSTRATE SURFACE The invention relates to nitride semiconductor component having a Group III nitride layer structure which is deposited on a substrate having a Group IV substrate surface made of a Group IV substrate material with a cubical crystal structure. The Group IV substrate surfa... | 06/03/2010 |
| 20100136773 | Semiconductor Device Manufacturing Method and Substrate Processing Apparatus A semiconductor device manufacturing method comprises the steps of loading a substrate into a processing chamber, mounting the substrate on a support tool in the processing chamber, processing the substrate mounted on the support tool by supplying process gas into the p... | 06/03/2010 |
| 20100120237 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES A growth substrate is removed from a semiconductor film, and a surface of the semiconductor film exposed by removing the growth substrate is flattened. The semiconductor film along device division lines are partially etched by dry etching to form grooves in a lattice th... | 05/13/2010 |
| 20100108976 | ELECTRONIC DEVICES INCLUDING CARBON-BASED FILMS, AND METHODS OF FORMING SUCH DEVICES Methods in accordance with this invention form microelectronic structures, such as non-volatile memories, that include carbon layers, such as carbon nanotube (“CNT”) films, in a way that protects the CNT film against damage and short-circuiting. Microelectronic stru... | 05/06/2010 |
| 20100093159 | SEPARATE INJECTION OF REACTIVE SPECIES IN SELECTIVE FORMATION OF FILMS Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include sim... | 04/15/2010 |
| 20100084664 | ZINC SULFIDE SUBSTRATES FOR GROUP III-NITRIDE EPITAXY AND GROUP III-NITRIDE DEVICES A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal orientation, and which has a first surface and a second surface. The structure includes a layer of a group III-nitride cr... | 04/08/2010 |
| 20100084742 | Method for manufacturing semiconductor epitaxial crystal substrate The present invention provides a method for manufacturing a gallium nitride semiconductor epitaxial crystal substrate with a dielectric film which has a low gate leak current and negligibly low gate lag, drain lag, and current collapse characteristics. The method for ma... | 04/08/2010 |
| 20100078626 | P-TYPE SEMICONDUCTOR MATERIAL, SEMICONDUCTOR DEVICE, ORGANIC ELECTROLUMINESCENT DEVICE, AND METHOD FOR MANUFACTURING P-TYPE SEMICONDUCTOR MATERIAL To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material,... | 04/01/2010 |
| 20100075488 | CVD REACTOR WITH MULTIPLE PROCESSING LEVELS AND DUAL-AXIS MOTORIZED LIFT MECHANISM An apparatus for processing a substrate, comprising a processing chamber and a substrate support and lift pin assembly disposed within the chamber. The substrate support and lift pin assembly are coupled to a lift mechanism that controls positioning of the substrate sup... | 03/25/2010 |
| 20100068872 | Method for Fabricating Single-Crystalline Substrate Containing Gallium Nitride The present invention provides a method for fabricating a single-crystalline substrate containing gallium nitride (GaN) comprising the following steps. First, form a plurality of island containing GaN on a host substrate. Next, use the plurality of islands containing Ga... | 03/18/2010 |
| 20100012922 | METHODS OF FORMING STRUCTURES INCLUDING NANOTUBES AND STRUCTURES INCLUDING SAME A semiconductor structure including nanotubes forming an electrical connection between electrodes is disclosed. The semiconductor structure may include an open volume defined by a lower surface of an electrically insulative material and sidewalls of at least a portion o... | 01/21/2010 |
| 20100001376 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE AND NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE The present invention provides a method for manufacturing a nitride semiconductor self-supporting substrate and a nitride semiconductor self-supporting substrate manufactured by this manufacturing method, the method including at least: a step of preparing a nitride semi... | 01/07/2010 |
