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| Application No. | Application Title | Issue Date |
| 20120049199 | Method of forming polycrystalline silicon layer, method of manufacturing thin film transistor including the method, thin-film transistor manufactured by using the method of manufacturing thin-film transistor, and organic light-emitting display device including the thin-film transistor A method of forming a polycrystalline layer includes forming a buffer layer on a substrate; treating the buffer layer with hydrogen plasma; forming an amorphous silicon layer on the buffer layer; forming a metallic catalyst layer for crystallizing the amorphous silicon ... | 03/01/2012 |
| 20120049188 | Method of forming polycrystalline silicon layer and thin film transistor and organic light emitting device including the polycrystalline silicon layer A method for forming a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; forming a metal catalyst on the amorphous silicon layer; forming a gettering metal layer on an overall surface of the amorphous silicon layer where the meta... | 03/01/2012 |
| 20120034766 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating ... | 02/09/2012 |
| 20120018733 | Thin Film Solar Cells And Other Devices, Systems And Methods Of Fabricating Same, And Products Produced By Processes Thereof Systems, methods, devices, and products of processes consistent with the innovations herein relate to thin-film solar cells and other devices. In one exemplary implementation, there is provided a thin film device.... | 01/26/2012 |
| 20120003807 | METHOD FOR FORMING SEMICONDUCTOR REGION AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE To provide a method for manufacturing a power storage device which enables improvement in performance of the power storage device, such as an increase in discharge capacity. To provide a method for forming a semiconductor region which is used for a power storage device ... | 01/05/2012 |
| 20110312135 | Method of forming a polycrystalline silicon layer and method of manufacturing thin film transistor A method of crystallizing a silicon layer and a method of manufacturing a TFT, the method of crystallizing a silicon layer including forming a catalyst metal layer on a substrate; forming a catalyst metal capping pattern on the catalyst metal layer; forming a second amo... | 12/22/2011 |
| 20110291100 | DEVICE AND METHOD FOR FABRICATING THIN SEMICONDUCTOR CHANNEL AND BURIED STRAIN MEMORIZATION LAYER A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer and processing the second semiconductor layer to form an amorphized mate... | 12/01/2011 |
| 20110284861 | LOW-TEMPERATURE POLYSILICON THIN FILM AND METHOD OF MANUFACTURING THE SAME, TRANSISTOR, AND DISPLAY APPARATUS A method for manufacturing a low-temperature polysilicon thin film comprises the steps of providing a substrate and forming a buffer layer on the substrate; forming a first amorphous silicon thin film on the buffer layer; forming catalyst particles on the first amorphou... | 11/24/2011 |
| 20110248277 | METHOD OF CRYSTALIZING AMORPHOUS SILICON LAYER, METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE SAME, AND THIN FILM TRANSISTOR USING THE MANUFACTURING METHOD A method of crystallizing an amorphous silicon layer, a method of manufacturing a thin film transistor using the same, and a thin film transistor using the manufacturing method, the crystallizing method including: forming an amorphous silicon layer; positioning crystall... | 10/13/2011 |
| 20110237055 | Methods of Manufacturing Stacked Semiconductor Devices A stacked semiconductor device that is reliable by forming an insulating layer on a lower memory layer and by forming a single crystalline semiconductor in portions of the insulating layer. A method of manufacturing the stacked semiconductor device, including: providing... | 09/29/2011 |
| 20110220874 | Inorganic Bulk Multijunction Materials and Processes for Preparing the Same A nanostructured composite material comprising semiconductor nanocrystals in a crystalline semiconductor matrix. Suitable nanocrystals include silicon, germanium, and silicon-germanium alloys, and lead salts such as PbS, PbSe, and PbTe. Suitable crystalline semiconducto... | 09/15/2011 |
| 20110223698 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS Provided are a crystallization apparatus and method, which prevent cracks from being generated, a method of manufacturing a thin film transistor (TFT), and a method of manufacturing an organic light emitting display apparatus. The crystallization apparatus includes a ch... | 09/15/2011 |
| 20110217815 | MANUFACTURING METHOD OF OXIDE SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF TRANSISTOR An object is to provide a manufacturing method of an oxide semiconductor film with high crystallinity. Another object is to provide a manufacturing method of a transistor with high field effect mobility. In a manufacturing method of an oxide semiconductor film, an oxide... | 09/08/2011 |
| 20110217828 | METHODS OF FABRICATING VERTICAL SEMICONDUCTOR DEVICE UTILIZING PHASE CHANGES IN SEMICONDUCTOR MATERIALS A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second prelim... | 09/08/2011 |
| 20110207303 | Methods of Fabricating Semiconductor Devices Methods for fabricating a semiconductor device are provided. In the methods, first material layers and second material layers may be alternatingly and repeatedly stacked on a substrate. An opening penetrating the first material layers and the second material layers may ... | 08/25/2011 |
| 20110207302 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SUBSTRATE PROCESSING METHOD AND APPARATUS Embodiments described herein relate to improving the quality of a substrate and the performance of a semiconductor device, which is caused by contaminates or particles being engrained into a substrate with a silicon film formed thereon, and forming a silicon film with a... | 08/25/2011 |
| 20110207304 | Method of Fabricating Semiconductor Devices Methods of fabricating a semiconductor device include alternatingly and repeatedly stacking sacrificial layers and first insulating layers on a substrate, forming an opening penetrating the sacrificial layers and the first insulating layers, and forming a spacer on a si... | 08/25/2011 |
| 20110186845 | CRYSTALLIZATION METHOD OF AMORPHOUS SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR Provided is a thin film transistor that includes a gate electrode formed in one major plane of a substrate, a gate insulating film covering the gate electrode, a semiconductor film formed opposite to the gate electrode with the gate insulating film interposed and includ... | 08/04/2011 |
| 20110156131 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon nitride film and a silicon oxide film are formed in this order on an inner su... | 06/30/2011 |
| 20110155995 | Vertically Oriented Nanostructure and Fabricating Method Thereof A vertically oriented nanometer-wires structure is disclosed. The vertically oriented nanometer-wires structure includes a non-crystalline base and many straight nanometer-wires. The straight nanometer-wires are uniformly distributed on the non-crystalline base, and the... | 06/30/2011 |
| 20110151651 | METHOD FOR FORMING INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND (110) PMOS FINFET SIDEWALL CHANNELS A method of forming an integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded ... | 06/23/2011 |
| 20110124184 | Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second el... | 05/26/2011 |
| 20110121309 | METHOD OF FABRICATING POLYSILICON LAYER, THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the... | 05/26/2011 |
| 20110124164 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE An amorphous semiconductor layer is formed over a first single crystal semiconductor layer provided over a glass substrate or a plastic substrate with an insulating layer therebetween. The amorphous semiconductor layer is formed by a CVD method at a deposition temperatu... | 05/26/2011 |
| 20110114961 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER, THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME, AND METHODS OF FABRICATING THE SAME A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a subs... | 05/19/2011 |
| 20110097881 | Method of Forming Mono-Crystalline Germanium or Silicon Germanium A method is presented for forming mono-crystalline germanium or silicon germanium in a trench. In an embodiment, the method comprises providing a substrate comprising at least one active region that is adjacent to two insulating regions, forming in the active region a t... | 04/28/2011 |
| 20110053355 | Plasma apparatus and method of fabricating nano-crystalline silicon thin film A plasma apparatus having a chamber, a set of arc electrodes and a substrate holder is provided. The set of arc electrodes disposed within the chamber has an anode and a cathode, wherein an arc forming space is formed between the anode and the cathode. The anode and the... | 03/03/2011 |
| 20110021008 | Directional Solid Phase Crystallization of Thin Amorphous Silicon for Solar Cell Applications Embodiments of the present invention provide a method for converting a doped amorphous silicon layer deposited onto a crystalline silicon substrate into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon sub... | 01/27/2011 |
| 20110014755 | METHOD OF FABRICATING POLYCRYSTALLINE SILICON, TFT FABRICATED USING THE SAME, METHOD OF FABRICATING THE TFT, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE TFT A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 to 50 Å on the a-Si layer, forming a metal catalyst l... | 01/20/2011 |
| 20110014781 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE According to one embodiment, a method of fabricating a semiconductor device includes forming a first insulator on a semiconductor substrate, forming a first groove on the insulator to expose at least a part of the semiconductor substrate at a bottom of the first groove,... | 01/20/2011 |
| 20100330759 | NANOWIRE TRANSISTOR WITH SURROUNDING GATE One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment of the method, a pillar of amorphous semiconductor material is formed on a crystalline substrate, and a solid phase epitaxy process is performed to crystall... | 12/30/2010 |
| 20100326513 | INVERSE OPAL STRUCTURE HAVING DUAL POROSITY, METHOD OF MANUFACTURING THE SAME, DYE-SENSITIZED SOLAR CELL, AND METHOD OF MANUFACTURING THE DYE-SENSITIZED SOLAR CELL An inverse opal structure having dual porosity, a method of manufacturing the inverse opal structure, a dye-sensitized solar cell, and a method of manufacturing the dye-sensitized solar cell improve the light scattering effects of an included light scattering layer and ... | 12/30/2010 |
| 20100323503 | INTEGRATED EMITTER FORMATION AND PASSIVATION Embodiments of the present invention provide a method for forming an emitter region in a crystalline silicon substrate and passivating the surface thereof by depositing a doped amorphous silicon layer onto the crystalline silicon substrate and thermally annealing the cr... | 12/23/2010 |
| 20100304547 | REDUCTION OF STI CORNER DEFECTS DURING SPE IN SEMICONDCUTOR DEVICE FABRICATION USING DSB SUBSTRATE AND HOT TECHNOLOGY A device and method of reducing residual STI corner defects in a hybrid orientation transistor comprising, forming a direct silicon bonded substrate wherein a second silicon layer with a second crystal orientation is bonded to a handle substrate with a first crystal ori... | 12/02/2010 |
| 20100295059 | SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRYSTAL SUBSTRATE The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stabilit... | 11/25/2010 |
| 20100237351 | METHOD OF MANUFACTURING A DOUBLE GATE TRANSISTOR A planar double-gate transistor is manufactured wherein crystallisation inhibitors are implanted into the channel region (16) of a semiconductor wafer (10), said wafer having a laminate structure comprising an initial crystalline semiconductor layer (14... | 09/23/2010 |
| 20100237346 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME A rectifier is formed by forming a first electrode layer, a semiconductor layer and a second electrode layer. A third electrode layer is formed between the first electrode layer and the semiconductor layer, or between the second electrode layer and the semiconductor lay... | 09/23/2010 |
| 20100233858 | METHOD OF PREVENTING GENERATION OF ARC DURING RAPID ANNEALING BY JOULE HEATING Disclosed herein is a rapid annealing method in a mixed structure composed of a heat treatment-requiring material, dielectric layer and conductive layer, comprising that during rapid annealing on a predetermined part of the heat treatment-requiring material, by instanta... | 09/16/2010 |
| 20100224883 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from... | 09/09/2010 |
| 20100227443 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER A method of forming a polycrystalline silicon layer includes forming an amorphous silicon layer on a substrate by chemical vapor deposition using a gas including a silicon atom and hydrogen gas, and crystallizing the amorphous silicon layer into a polycrystalline silico... | 09/09/2010 |
