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| Application No. | Application Title | Issue Date |
| 20120129290 | METHOD FOR FORMING SEMICONDUCTOR NANO-MICRO RODS AND APPLICATIONS THEREOF An embodiment of this invention utilizes ZnO rods as the etching mask to etch a GaN layer arranged below, so that GaN rods are formed. The GaN rods have similar patterns as the ZnO rods. The pattern, size, position, and height of the GaN rods are respectively controlled... | 05/24/2012 |
| 20120107990 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR CRYSTAL GROWTH APPARATUS According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include a crystal growth process. The crystal growth process is configured to grow a stacked structure of compound semiconductor composed of a grou... | 05/03/2012 |
| 20120107991 | MAGNESIUM DOPING IN BARRIERS IN MULTIPLE QUANTUM WELL STRUCTURES OF III-NITRIDE-BASED LIGHT EMITTING DEVICES A III-nitride-based light emitting device having a multiple quantum well (MQW) structure and a method for fabricating the device, wherein at least one barrier in the MQW structure is doped with magnesium (Mg). The Mg doping of the barrier is accomplished by introducing ... | 05/03/2012 |
| 20120083063 | Method for producing group III nitride semiconductor light-emitting device A method for producing a Group III nitride semiconductor light-emitting device includes an n-type layer, a light-emitting layer, and a p-type layer, each of the layers being formed of Group III nitride semiconductor, being sequentially deposited via a buffer layer on a ... | 04/05/2012 |
| 20120068153 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group... | 03/22/2012 |
| 20120068207 | OPTICAL DEVICE, SEMICONDUCTOR WAFER, METHOD OF PRODUCING OPTICAL DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER Provided is an optical device including a base wafer containing silicon, a plurality of seed crystals disposed on the base wafer, and a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals. At least on... | 03/22/2012 |
| 20120068172 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME An organic light emitting display device includes a substrate, a transparent electrode layer, a source/drain layer, an IGZO semiconductor layer, a first insulating layer, a gate layer, a second insulating layer and an organic light emitting diode. The organic light-emit... | 03/22/2012 |
| 20120068154 | GRAPHENE QUANTUM DOT LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME A graphene quantum dot light emitting device includes: a first graphene; a graphene quantum dot layer disposed on the first graphene and including a plurality of graphene quantum dots; and a second graphene disposed on the graphene quantum dot layer. A method of manufac... | 03/22/2012 |
| 20120049158 | ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY INCREASED INDIUM INCORPORATION An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ra... | 03/01/2012 |
| 20120049157 | NITRIDE SEMICONDUCTOR LIGHT EMMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on t... | 03/01/2012 |
| 20120049152 | SOLID STATE LIGHTING DEVICES WITH LOW CONTACT RESISTANCE AND METHODS OF MANUFACTURING Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconduc... | 03/01/2012 |
| 20120043523 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer i... | 02/23/2012 |
| 20120037884 | THIN P-TYPE GALLIUM NITRIDE AND ALUMINUM GALLIUM NITRIDE ELECTRON-BLOCKING LAYER FREE GALLIUM NITRIDE-BASED LIGHT EMITTING DIODES A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking lay... | 02/16/2012 |
| 20120032137 | SOLID STATE LIGHTING DEVICES WITH DIELECTRIC INSULATION AND METHODS OF MANUFACTURING Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and a... | 02/09/2012 |
| 20120033698 | NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING SAME A nitride semiconductor laser element has: a nitride semiconductor layer having cavity planes at the ends of a waveguide region, an insulating film formed on an upper face of the nitride semiconductor layer so that the ends on the cavity plane side are isolated from cav... | 02/09/2012 |
| 20120032141 | Compositions Comprising QD Sol-Gel Composites and Methods for Producing and Using the Same The present invention provides OLEDs comprising cross-linked quantum dots and methods for producing and using the same.... | 02/09/2012 |
| 20120032143 | EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device com... | 02/09/2012 |
| 20120025232 | III-NITRIDE LIGHT-EMITTING DIODE AND METHOD OF PRODUCING THE SAME Embodiments of the present invention provides III-nitride light-emitting diodes, which primarily include a first electrode, a n-type gallium nitride (GaN) nanorod array consisted of one or more n-type GaN nanorods ohmic contacting with the first electrode, one or more i... | 02/02/2012 |
| 20120018753 | ULTRAVIOLET LIGHT EMITTING DIODE DEVICES AND METHODS FOR FABRICATING THE SAME A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum ga... | 01/26/2012 |
| 20120018734 | Light-emitting devices and methods of manufacturing the same Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission... | 01/26/2012 |
| 20120013273 | SOLID STATE LIGHTING DEVICES WITHOUT CONVERTER MATERIALS AND ASSOCIATED METHODS OF MANUFACTURING Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor materia... | 01/19/2012 |
| 20120012855 | SOLID-STATE LIGHT EMITTERS HAVING SUBSTRATES WITH THERMAL AND ELECTRICAL CONDUCTIVITY ENHANCEMENTS AND METHOD OF MANUFACTURE Solid-state lighting devices (SSLDs) including a carrier substrate with conductors and methods of manufacturing SSLDs. The conductors can provide (a) improved thermal conductivity between a solid-state light emitter (SSLE) and a package substrate and (b) improved electr... | 01/19/2012 |
| 20120012814 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the l... | 01/19/2012 |
| 20120009711 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING UNDERLYING LAYER A method of making a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underly... | 01/12/2012 |
| 20120008660 | III-NITRIDE SEMICONDUCTOR LASER, AND METHOD FOR FABRICATING III-NITRIDE SEMICONDUCTOR LASER Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not l... | 01/12/2012 |
| 20110315953 | METHOD OF FORMING COMPOUND SEMICONDUCTOR A method of forming a semiconductor is provided and includes patterning a pad and a nanowire onto a wafer, the nanowire being substantially perpendicular with a pad sidewall and substantially parallel with a wafer surface and epitaxially growing on an outer surface of t... | 12/29/2011 |
| 20110318857 | Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof Provided is a nitride semiconductor light emitting device including: a substrate; a first buffer layer formed above the substrate; an indium-containing second buffer layer formed above the first buffer layer; an indium-containing third buffer layer formed above the seco... | 12/29/2011 |
| 20110315952 | LIGHT-EMITTING DEVICES WITH IMPROVED ACTIVE-REGION A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increas... | 12/29/2011 |
| 20110318860 | Group-III Nitride Epitaxial Layer on Silicon Substrate A semiconductor device includes a silicon substrate; silicon faceted structures formed on a top surface of the silicon substrate; and a group-III nitride layer over the silicon faceted structures. The silicon faceted structures are separated from each other, and have a ... | 12/29/2011 |
| 20110316018 | ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers... | 12/29/2011 |
| 20110309345 | COMPOUND FOR ORGANIC ELECTROLUMINESCENT DEVICE AND ORGANIC ELECTROLUMINESCENT DEVICE HAVING THE SAME The present invention provides a compound of formula (I) for an organic electroluminescent device: wherein X and Y are each independently selected for the group consisting of an alkyl substituted, aryl substi... | 12/22/2011 |
| 20110312117 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming an active layer including indium (In) on a heated substrate. The method can include forming a multiple-layer film made of a nitride... | 12/22/2011 |
| 20110309328 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, EPITAXIAL SUBSTRATE, AND METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitti... | 12/22/2011 |
| 20110303931 | SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME Disclosed are a semiconductor light emitting diode and a method for fabricating the same. The method comprises forming a crystalline nitride semiconductor layer on a substrate, forming an amorphous layer and a crystalline nitride semiconductor layer on the nitride semic... | 12/15/2011 |
| 20110303932 | Organic, Radiation-Emitting Component and Method for Producing the Same A method for producing an organic, radiation-emitting component is specified, wherein at least one layer (10) containing an emitter material is produced in a radiation-emitting region (4) of the component, wherein the layer (10) is produced by means... | 12/15/2011 |
| 20110292958 | ENHANCED PLANARITY IN GaN EDGE EMITTING LASERS A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate defines a 20 | 12/01/2011 |
| 20110291072 | SEMICONDUCTOR DIES, LIGHT-EMITTING DEVICES, METHODS OF MANUFACTURING AND METHODS OF GENERATING MULTI-WAVELENGTH LIGHT A semiconductor die includes at least one first region and at least one second region. The at least one first region is configured to emit light having at least a first wavelength. The at least one second region is configured to emit light having at least a second wavel... | 12/01/2011 |
| 20110284890 | LIGHT EMITTING DEVICE GROWN ON A RELAXED LAYER In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type reg... | 11/24/2011 |
| 20110284919 | METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber... | 11/24/2011 |
| 20110284824 | LIGHT EMITTING DIODE STRUCTURE AND A METHOD OF FORMING A LIGHT EMITTING DIODE STRUCTURE A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure comprises a superlattice comprising, a first barrier layer; a first quantum well layer comprising a first metal-nitride based material formed on the fir... | 11/24/2011 |
