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| Application No. | Application Title | Issue Date |
| 20110180828 | SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS OF MANUFACTURING Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN... | 07/28/2011 |
| 20090233394 | Led with substrate modifications for enhanced light extraction and method of making same The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into ... | 09/17/2009 |
| 20090200563 | Group III nitride semiconductor light-emitting device and production method therefor Provided is a method for producing a Group III nitride semiconductor light-emitting device including a GaN substrate serving as a growth substrate, which method facilitates tapering of a bottom portion of the GaN substrate. In the production method, firstly, a Group III... | 08/13/2009 |
| 20080131987 | METHOD FOR FABRICATING LIGHT-EMITTING DEVICE A method for fabricating a light-emitting device includes: forming a first semiconductor layer on a substrate; foaming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer, the second semiconductor layer having a con... | 06/05/2008 |
| 20070246724 | PACKAGE BASE STRUCTURE AND ASSOCIATED MANUFACTURING METHOD A package base structure of a light emitting device and associated manufacturing method is provided. The method includes steps of forming a first mask layer and a second mask layer on a first surface and a second surface of a substrate; defining a first opening and a se... | 10/25/2007 |
| 20070065961 | Method of manufacturing amorphous NIO thin films and nonvolatile memory devices using the same Example embodiments relate to a method of manufacturing amorphous NiO thin films and nonvolatile memory devices including amorphous thin films that use a resistance material. Other example embodiments relate to a method of manufacturing amorphous NiO thin films having i... | 03/22/2007 |
| 20070048894 | System and method for reduced material pileup An embodiment of the invention pertains to a two stage process that facilitates the formation of a substantially uniform layer. A material is isotropically deposited on a re-entry shaped surface topography and a substrate resulting in a non-wetting film on the re-entry ... | 03/01/2007 |
| 20070037407 | Method of cleaning semiconductor device fabrication apparatus A semiconductor device fabrication apparatus is cleaned after a conductive layer is formed on a metal oxide layer of a substrate. The substrate is disposed on a heater in a process chamber of the apparatus, and the conductive layer is formed by introducing source gases ... | 02/15/2007 |
| 20060281326 | Washing apparatus, washing stystem, and washing method The present invention provides a cleaning apparatus, a cleaning system and a cleaning method for a member used in the semiconductor field, excellent in cleaning capability and good in operation efficiency. The present invention is directed to a cleaning apparatus for cl... | 12/14/2006 |
