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| Application No. | Application Title | Issue Date |
| 20120070927 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater th... | 03/22/2012 |
| 20120068196 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND A METHOD OF MANUFACTURE THEREOF A semiconductor light-emitting device comprises a semiconductor layer structure disposed over a substrate. The layer structure includes an active region disposed between a first layer and a second layer. One or more cavities are present in the layer structure, each cavi... | 03/22/2012 |
| 20120018763 | RADIATION-EMITTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arran... | 01/26/2012 |
| 20110254044 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING A LIGHT EMITTING DEVICE A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure... | 10/20/2011 |
| 20110255294 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP A semiconductor light-emitting device (1) of the present invention includes: a substrate (101); a laminated semiconductor layer (20) containing a light-emitting layer, which is formed on the substrate (101); a first electrode (111) for... | 10/20/2011 |
| 20110198609 | Light-Emitting Devices with Through-Substrate Via Connections Multiple through-substrate vias (TSVs) are used to make electrical connections for an LED formed over a substrate. A first TSV extends through the substrate from a back surface of the substrate to the front surface of the substrate and includes a first TSV conductor tha... | 08/18/2011 |
| 20110163347 | Series Connected Segmented LED A light source and method for making the same are disclosed. The light source includes a substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type d... | 07/07/2011 |
| 20110159624 | METHOD OF FORMING LIGHT-EMITTING DIODE A method of forming a light emitting diode is provided. The method includes providing a growth substrate; sequentially forming a sacrificial layer and an epitaxial layer on the growing substrate; forming one or more epitaxial layer openings penetrating the epitaxial lay... | 06/30/2011 |
| 20110136276 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATION THEREOF A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 ... | 06/09/2011 |
| 20110134948 | Semiconductor laser chip, semiconductor laser device, and semiconductor laser chip manufacturing method Provided is a semiconductor laser chip improved more in heat dissipation performance. This semiconductor laser chip includes a substrate, which has a front surface and a rear surface, nitride semiconductor layers, which are formed on the front surface of the substrate, ... | 06/09/2011 |
| 20110134952 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL DISC DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE A method of manufacturing a semiconductor laser having an end surface window structure includes the steps of forming a groove near at least the formation position of the end surface window structure of a substrate, and growing a nitride-based group III-V compound semico... | 06/09/2011 |
| 20110111543 | METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE A thin-film transistor including a gate electrode, a drain electrode, and a source electrode is formed. A first insulating film is formed so as to cover the thin-film transistor. A second insulating film is formed on the first insulating film. A transparent conductive f... | 05/12/2011 |
| 20110084306 | SEMICONDUCTOR LIGHT EMITTING DEVICE A semiconductor light emitting device and corresponding method of manufacture, where the semiconductor light emitting device includes a light emitting structure, a second electrode layer, an insulating layer, and a protrusion. The light emitting structure comprises a se... | 04/14/2011 |
| 20110076793 | PRODUCTION PROCESS FOR SURFACE-MOUNTING CERAMIC LED PACKAGE, SURFACE-MOUNTING CERAMIC LED PACKAGE PRODUCED BY SAID PRODUCTION PROCESS, AND MOLD FOR PRODUCING SAID PACKAGE The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green sheet, inserting a mold with a groove to form a partition in the bottom of t... | 03/31/2011 |
| 20110049556 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF The present invention provides a semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and hence the device is suitable for lighting instruments such as lights and lamps. This semiconductor device comprises a m... | 03/03/2011 |
| 20110014734 | METHOD FOR FABRICATING FLIP CHIP GALLIUM NITRIDE LIGHT EMITTING DIODE The present invention discloses a method for fabricating a flip chip GaN LED, which has a predetermined region on an epitaxial layer for forming a first groove to expose a portion of the substrate, and another predetermined region on the epitaxial layer for forming a se... | 01/20/2011 |
| 20110012094 | Electro-Optic Device and Method for Manufacturing the same Provided are an electro-optic device and a method for manufacturing the same. The method includes forming a bottom electrode on a substrate, forming a first insulation film to cross over the bottom electrode forming an organic film on the substrate where the bottom elec... | 01/20/2011 |
| 20100320489 | SEMICONDUCTOR LIGHT EMITTING DEVICE WITH A CONTACT FORMED ON A TEXTURED SURFACE A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure includes an n-contact region and a p-contact region. A cross section of the n-contact region comprises a plur... | 12/23/2010 |
| 20100301381 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF Provided are a nitride semiconductor light emitting element, including an n-type nitride semiconductor substrate including a dislocation bundle concentration region, and a nitride semiconductor stacked body having an n-type nitride semiconductor layer, an active layer, ... | 12/02/2010 |
| 20100290493 | LASER DIODE AND METHOD OF MANUFACTURING THE SAME A laser diode includes an active layer, a strip-shaped ridge provided above the active layer, a pair of resonator end faces sandwiching the active layer and the ridge from an extending direction of the ridge, and an upland section provided being contacted with both side... | 11/18/2010 |
| 20100265981 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and further improving flatness of a semiconductor layer is obtained. This nitride-ba... | 10/21/2010 |
| 20100253225 | LIGHT DEVICE AND METHOD OF MANUFACTURING A LIGHT DEVICE Light device comprising a substrate, at least one photo-organic layer, at least two electrode layers electrically separated by said at least one photo-organic layer, and at least one encapsulation layer, wherein said at least one photo-organic layer is positioned betwee... | 10/07/2010 |
| 20100226134 | Methods and Apparatus for Improving Collimation of Radiation Beams An apparatus for collimating radiation can include an aperture of subwavelength dimensions and a neighboring set of grooves defined on a metal film integrated with an active or passive device that emits radiation. Integration of the beam collimator onto the facet of a l... | 09/09/2010 |
| 20100219442 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THEREOF Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device includes a light emitting structure, an insulating substrate, a first electrode, a second electrode, and a conductive supporting substrate.... | 09/02/2010 |
| 20100220759 | SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING SEMICONDUCTOR LASER Provided is a semiconductor laser, wherein (λa−λw)>15 (nm) and Lt<25 (μm), where λw is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 μm from one end surface in a resonator direction, ... | 09/02/2010 |
| 20100203662 | LIGHT EMITTING DEVICE A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not para... | 08/12/2010 |
| 20100187559 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME Provided is a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconduc... | 07/29/2010 |
| 20100155715 | DISPLAY SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME A display substrate according to the present invention comprises a gate line formed on a substrate. a data line, a thin film transistor connected to the gate line and the data line respectively and pixel electrode connected to the thin film transistor, wherein a channel... | 06/24/2010 |
| 20100144075 | METHOD OF FORMING OPTICAL WAVEGUIDE Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through whic... | 06/10/2010 |
| 20100133562 | High Brightness LED Utilizing a Roughened Active Layer and Conformal Cladding A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, inclu... | 06/03/2010 |
| 20100112741 | INTEGRATED PHOTONIC SEMICONDUCTOR DEVICES AND METHODS FOR MAKING INTEGRATED PHOTONIC SEMICONDUCTOR DEVICES A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher m... | 05/06/2010 |
| 20100093123 | LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer an... | 04/15/2010 |
| 20100092888 | Process for Structuring Silicon A process for etching a silicon-containing substrate to form structures is provided. In the process, a metal is deposited and patterned onto a silicon-containing substrate (commonly one with a resistivity above 1-10 ohm-cm) in such a way that the metal is present and to... | 04/15/2010 |
| 20100085996 | NITRIDE SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD A method for manufacturing a nitride semiconductor laser device with suppression of deterioration of the yield and good light emission characteristic. The method comprises a step of forming nitride semiconductor layers on an n-type GaN substrate, a step of forming a rid... | 04/08/2010 |
| 20100087021 | METHOD OF FABRICATING PIXEL STRUCTURE A method of fabricating a pixel structure includes first forming a first, a second, and a third dielectric layers over an active device and a substrate. Etching rates of the first and the third dielectric layers are lower than an etching rate of the second dielectric la... | 04/08/2010 |
| 20100078672 | Group III nitride semiconductor light-emitting device and production method therefor Provided is a method for producing a Group III nitride semiconductor light-emitting device including a GaN substrate serving as a growth substrate, which method realizes processing of the GaN substrate to have a membrane structure at high reproducibility. In the product... | 04/01/2010 |
| 20100012969 | LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor l... | 01/21/2010 |
| 20100007271 | Organic light emitting diode display apparatus and method of manufacturing the same An organic light emitting diode (OLED) display apparatus, including a substrate, at least one thin film transistor (TFT) on the substrate, an insulating layer covering the at least one TFT and having a via hole and a groove, a first electrode on the insulating layer and... | 01/14/2010 |
| 20090298212 | Silicon Based Solid State Lighting A semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V compound layers on the substrate, wherein the plurality of III-V compound layers are configured to... | 12/03/2009 |
| 20090275159 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LASER ELEMENT A method for manufacturing a nitride semiconductor laser element having a nitride semiconductor layer including at least an active layer provided on a substrate, a pair of cavity planes formed on the nitride semiconductor layer, and a protruding part where part of the s... | 11/05/2009 |
