Class 438/40 - Tapered etching

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process wherein the material removal step is by etching
No. of applications: 20
Last issue date: 09/01/2011

Application No.	Application Title	Issue Date
20110211604	Completely Self-Adjusted Surface-Emitting Semiconductor Laser For Surface Mounting Having Optimized Properties The present invention relates to a surface-emitting semiconductor laser having a vertical resonator, comprising a substrate base section (1) and a mesa (M) arranged on and/or at the substrate base section, the mesa substantially comprising, viewed perpendicular t...	09/01/2011
20110124140	SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor laser device includes a chip obtained from a substrate and a semiconductor multi-layer formed on the substrate. The semiconductor multi-layer is formed from a plurality of semiconductor layers of a semiconductor material having a hexagonal structure, and...	05/26/2011
20110124139	METHOD FOR MANUFACTURING FREE-STANDING SUBSTRATE AND FREE-STANDING LIGHT-EMITTING DEVICE The present invention provides a method for manufacturing a free-standing substrate, comprising: growing a first layer having a sacrificial layer on a growth substrate; patterning the first layer into a patterned first layer having a structure of a plurality of protrusi...	05/26/2011
20100047947	Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b)...	02/25/2010
20090142869	Method of producing semiconductor optical device Si atoms obtained by thermal decomposition of SiH₄are adsorbed in advance on one surface of a semiconductor substrate and side surfaces of a semiconductor mesa part. Thereby, prior to the growth of a buried layer, a diffusion protection layer composed of Si-...	06/04/2009
20090020781	NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING SAME An exemplary nitride-based semiconductor light emitting device includes a substrate, a nitride-based multi-layered structure epitaxially formed on the substrate, a first-type electrode and a second-type electrode. The multi-layered structure includes a first-type layer,...	01/22/2009
20080305569	Semiconductor Device and a Method of Manufacturing the Same A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can...	12/11/2008
20080291960	Semiconductor laser diode and the manufacturing method thereof A multibeam semiconductor laser diode having: an n-type semiconductor substrate; an n-type clad layer, an active layer, a p-type clad layer and a contact layer; a plurality of partitioning grooves extending from one end to the other end of the substrate and formed from ...	11/27/2008
20080258130	Beveled LED Chip with Transparent Substrate A light emitting diode is disclosed that includes a transparent (and potentially low conductivity) silicon carbide substrate, an active structure formed from the Group III nitride material system on the silicon carbide substrate, and respective ohmic contacts on the top...	10/23/2008
20080240190	METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at l...	10/02/2008
20080224168	Intride-based semiconductor light emitting diode and method of manufacturing the same A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor lay...	09/18/2008
20080056324	METHOD OF PRODUCING MULTI-WAVELENGTH SEMICONDUCTOR LASER DEVICE A method for producing a multi-wavelength semiconductor laser device includes the steps of: forming a nitride epitaxial layer on a substrate for growth of a nitride single crystal; separating the nitride epitaxial layer from the substrate; attaching the separated nitrid...	03/06/2008
20080032435	METHOD FOR MANUFACTURING SEMICONDUCTOR LASER ELEMENT The method for manufacturing a semiconductor laser element according to the present invention has the steps of: forming a semiconductor laminated structure having an active layer composed of a semiconductor material containing Al; etching the semiconductor laminated str...	02/07/2008
20080032436	Light emitting diode and method of fabricating the same A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions...	02/07/2008
20080014670	SEMICONDUCTOR LASER ELEMENT A method of producing a semiconductor laser element including a step of growing a lower cladding layer, an active layer, a left upper cladding layer, a etching stopper layer having a multiple quantum well structure, an upper cladding layer and a contact layer in the ord...	01/17/2008
20070141740	METHOD FOR DAMAGE AVOIDANCE IN TRANSFERRING AN ULTRA-THIN LAYER OF CRYSTALLINE MATERIAL WITH HIGH CRYSTALLINE QUALITY A method for damage avoidance in transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained epitaxial layer buried below a monocrystalline thin layer, and lift-off and trans...	06/21/2007
20070048894	System and method for reduced material pileup An embodiment of the invention pertains to a two stage process that facilitates the formation of a substantially uniform layer. A material is isotropically deposited on a re-entry shaped surface topography and a substrate resulting in a non-wetting film on the re-entry ...	03/01/2007
20060130893	Organic photovoltaic cells with an electric field integrally-formed at the heterojunction interface A bi-layer photovoltaic cell, and method (100) of making same, with an electric field applied at the p-n heterojunction interface. The cell includes a first semiconductor layer including a binder, nanocrystals of an n-type semiconductor, and spatially bound catio...	06/22/2006
20060099729	STRUCTURE AND METHOD OF MAKING A SEMICONDUCTOR INTEGRATED CIRCUIT TOLERANT OF MIS-ALIGNMENT OF A METAL CONTACT PATTERN Disclosed is a method of fabricating a field effect transistor. In the method, a gate stack on a top surface of a semiconductor substrate is formed, and then a first spacer is formed on a sidewall of the gate stack. Next, a silicide self-aligned to the first spacer is d...	05/11/2006
20060094147	Metal-insulator-metal device A method for forming a metal-insulator-metal device includes imprinting at least one first layer to form a first impression, removing a portion of at least one second layer through the first depression to form a recess in the at least one second layer bordered by a firs...	05/04/2006

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Class 438/40 - Tapered etching