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| Application No. | Application Title | Issue Date |
| 20110318858 | METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passiva... | 12/29/2011 |
| 20110304684 | SURFACE EMITTING LASER DEVICE, SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, IMAGE FORMING APPARATUS, AND METHOD OF MANUFACTURING THE SURFACE EMITTING LASER DEVICE A surface emitting laser device includes a substrate and plural semiconductor layers laminated on the substrate, the plural semiconductor layers including a first semiconductor multi-layer film including aluminum (Al), an active layer, and a second semiconductor multi-l... | 12/15/2011 |
| 20110291139 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optical device disposed on the first surface; a conducting pad disposed on the first surface; a first alignment mark formed on the first su... | 12/01/2011 |
| 20110253972 | LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM A method for fabricating a semiconductor light-emitting device based on a strain adjustable multilayer semiconductor film is disclosed. The method includes epitaxially growing a multilayer semiconductor film on a growth substrate, wherein the multilayer semiconductor fi... | 10/20/2011 |
| 20110195539 | METHOD FOR FORMING SEMICONDUCTOR LAYER AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE A method for manufacturing a light emitting device according to an embodiment of the present invention includes preparing a growth substrate; selectively forming a projection pattern on the growth substrate; forming a first conductive type semiconductor layer on the gro... | 08/11/2011 |
| 20110159623 | Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode c... | 06/30/2011 |
| 20110147704 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION LAYER A light-emitting device and method for the fabrication thereof. The device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-we... | 06/23/2011 |
| 20110143471 | SURFACE PASSIVATION TECHNIQUES FOR CHAMBER-SPLIT PROCESSING Surface passivation techniques for chamber-split processing are described. A method includes forming a first Group III-V material layer above a substrate, the first Group III-V material layer having a top surface. A passivation layer is deposited on the top surface of t... | 06/16/2011 |
| 20110133159 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER A semiconductor light-emitting device includes a substrate, a first doped semiconductor layer, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) active layer situated between the first and the second do... | 06/09/2011 |
| 20110127518 | Transistor, method of manufacturing the transistor and electronic device including the transistor Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is va... | 06/02/2011 |
| 20110121270 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME An organic light emitting device including a substrate on which an organic light emitting unit is formed, wherein the organic light emitting unit sequentially includes a first electrode, an organic layer, and a second electrode; and a passivation layer covering the subs... | 05/26/2011 |
| 20110108861 | PROCESS FOR ANISOTROPIC ETCHING OF SEMICONDUCTORS A method is provided for anisotropically etching semiconductor materials such as II-VI and III-V semiconductors. The method involves repeated cycles of plasma sputter etching of semiconductor material with a non-reactive gas through an etch mask, followed by passivation... | 05/12/2011 |
| 20110049540 | METHOD FOR FABRICATING ROBUST LIGHT-EMITTING DIODES One embodiment of the present invention provides a method for fabricating light-emitting diodes (LEDs). The method includes fabricating an InGaAlN-based multilayer LED structure on a conductive substrate. The method further includes etching grooves of a predetermined pa... | 03/03/2011 |
| 20110033965 | VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-ty... | 02/10/2011 |
| 20110008922 | METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconduct... | 01/13/2011 |
| 20110001120 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second d... | 01/06/2011 |
| 20100291722 | ETCHANT AND METHOD OF MANUFACTURING AN ARRAY SUBSTRATE USING THE SAME An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to ab... | 11/18/2010 |
| 20100207549 | LIGHT EMITTING SEMICONDUCTOR DIODE Visible and infrared light sources on silicon that have several attractive properties with respect to integrated optics. First, the devices are operational at room temperature and strictly require no thermal processing in their synthesis (although low temperature anneal... | 08/19/2010 |
| 20100193827 | Pixel Structure and Method for Fabricating the Same A pixel structure includes a first patterned metal layer, a gate insulating layer, a semiconductor channel layer, a second patterned metal layer, a passivation layer, and a conducting layer. A gate line of the second patterned metal layer is electrically connected by th... | 08/05/2010 |
| 20100155730 | THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF In the manufacturing process of the thin film transistor array panel according to an exemplary embodiment of the present invention using three masks, the metal oxide semiconductor or the transparent conductive oxide is used, thereby executing an efficient lift-off proce... | 06/24/2010 |
| 20100133990 | ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF An organic light emitting device includes a substrate including a display area and a peripheral area, a first signal line and a second signal line intersecting the first signal line, a switching thin film transistor electrically connected to the first signal line and th... | 06/03/2010 |
| 20100132762 | ENVIRONMENTAL BARRIER COATING FOR ORGANIC SEMICONDUCTOR DEVICES AND METHODS THEREOF Improved environmental barrier coatings and improved organic semiconductor devices employing the improved environmental barrier coatings are disclosed herein. Methods of making and using the improved coatings and devices are also described. An improved environmental bar... | 06/03/2010 |
| 20100117115 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT A method includes steps of: sequentially growing a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type on a growth substrate to form a layered structure; separating the substrate from th... | 05/13/2010 |
| 20100035418 | PASSIVATION OF SEMICONDUCTOR STRUCTURES HAVING STRAINED LAYERS The present invention provides, in part, methods producing multilayer semiconductor structures having one or more at least partially relaxed strained layers, where the strained layer is at least partially relaxed by annealing. In particular, the invention forms diffusio... | 02/11/2010 |
| 20100012938 | Thin film transistor substrate and method for manufacturing same A thin film transistor (TFT) substrate includes gate lines, data lines intersecting with the gate lines, a plurality of TFTs, pixel electrodes, and a common electrode insulating the gate lines, the data lines, the TFTs, and the pixel electrode. Each pixel electrode is c... | 01/21/2010 |
| 20100006884 | Light Emitting Device and Manufacturing Method Therof The application relates to a structure of a light emitting device and the manufacturing method thereof. The application discloses a method of forming a bonding pad of the light emitting device by chemical deposition method. The light emitting device includes a substrate... | 01/14/2010 |
| 20090321740 | TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF A TFT-LCD array substrate and a manufacturing method thereof. The array substrate comprises a gate line, a data line, and a pixel electrode, and the pixel electrode is disposed in a pixel region defined by the intersection between the gate line and the data line. In the... | 12/31/2009 |
| 20090325333 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME According to one aspect of the present invention, at least one or more of patterns required for manufacturing a display device, such as a conductive layer which forms a wiring or an electrode and a mask, is formed by a droplet discharging method. At that time, a portion... | 12/31/2009 |
| 20090311817 | VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-ty... | 12/17/2009 |
| 20090278163 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME A light-emitting device (1) is provided having a current blocking layer (9) of buried structure, a portion of the current blocking layer (9) having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer being ... | 11/12/2009 |
| 20090272977 | PIXEL STRUCTURE OF A THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY AND FABRICATING METHOD THEREOF A method of fabricating a pixel structure of a thin film transistor liquid crystal display is provided. A transparent conductive layer and a first metallic layer are sequentially formed over a substrate. The first metallic layer and the transparent conductive layer are ... | 11/05/2009 |
| 20090268134 | THIN FILM TRANSISTOR ARRAY PANEL AND A METHOD FOR MANUFACTURING THE SAME A liquid crystal display includes a first substrate, a plurality of gate lines formed on the first substrate, a plurality of data lines intersecting the gate lines, a plurality of thin film transistors connected to the gate lines and the data lines, a plurality of color... | 10/29/2009 |
| 20090257466 | Optoelectronic Semiconductor Component and Method for the Production of an Optoelectronic Semiconductor Device In at least one embodiment, the optoelectronic semiconductor component includes an optically active area that is formed with a crystalline semiconductor material that contains at least one of the substances gallium or aluminum. Furthermore, the semiconductor component c... | 10/15/2009 |
| 20090236977 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME An organic light emitting diode (OLED) display device and a method of fabricating the same. The OLED display device includes a substrate, a thin film transistor on the substrate and including a semiconductor layer, a gate electrode, a gate insulating layer, a source ele... | 09/24/2009 |
| 20090225804 | SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME A semiconductor laser comprises an active section for generating light, and a peripheral section as resonator for producing laser light from the generated light, and includes an InP substrate. The active section has a lower cladding layer formed of AlInAs or AlGaInAs, a... | 09/10/2009 |
| 20090212298 | Thin Film Transistor Substrate Having Nickel-Silicide Layer Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-sil... | 08/27/2009 |
| 20090181226 | METHOD FOR MANUFACTURING METAL LINE EMBEDDED IN SUBSTRATE AND METHOD FOR MANUFACTURING DISPLAY PANEL HAVING THE EMBEDDED METAL LINE A method for manufacturing a metal line embedded in a substrate includes forming a trench in the substrate, bringing a stenciling plate having a through hole corresponding to the trench into contact with the substrate with the through hole being aligned to and exposing ... | 07/16/2009 |
| 20090174928 | DISPLAY SUBSTRATE, ELECTROPHORETIC DISPLAY DEVICE WITH THE SAME AND METHOD FOR MANUFACTURING THE SAME A display substrate, an electrophoretic display (EPD) device including the same, and a method for manufacturing the same are disclosed. The display substrate includes a display region and a non-display region. The display region includes a plurality of gate lines, a plu... | 07/09/2009 |
| 20090174322 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD FOR FORMING THE SAME An organic light-emitting device and a method for forming the same are provided. The organic light-emitting device includes: a substrate including a pixel area and a peripheral circuit area; a passivation layer on the substrate, the passivation layer including a first p... | 07/09/2009 |
| 20090127544 | Method for producing organic electronic devices on solvent-and/or temperature-sensitive plastic substrates The invention relates to the production of organic field-effect transistors (OFETs), solar cells or light-emitting diodes (OLEDs) and circuits based thereon on the surface of solvent- and/or temperature-sensitive plastics, e.g. thermoplastic injection-moulded bodies. A ... | 05/21/2009 |
