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Class 438/370 - Forming buried region (e.g., implanting through insulating layer, etc.)


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process wherein the dopant is implanted or diffused through
No. of applications: 7
Last issue date: 03/22/2012


Application No.Application TitleIssue Date
20120068309Transistor and Method of Manufacturing a Transistor
In accordance with an embodiment of the present invention a transistor is disclosed. The transistor comprises a collector, a base and an emitter, wherein a first end width of the base is larger than a middle width of the base, wherein a first end width of the collector ...
03/22/2012
20070148893Method of forming a doped semiconductor portion
A method of forming a doped semiconductor portion includes providing a semiconductor substrate with a surface, and providing protruding portions of a covering layer on the substrate surface, where the portions are arranged in a pattern of lines or segments of lines exte...
06/28/2007
20070148894SEMICONDUCTOR DEVICE AND METHOD FOR REGIONAL STRESS CONTROL
Mechanical stress control may be achieved using materials having selected elastic moduli. These materials may be selectively formed by implantation, may be provided as a plurality of buried layers interposed between the substrate and the active area, and may be formed b...
06/28/2007
20070087511Method for forming an avalanche photodiode
Methods for fabricating an avalanche photodiode (APD), wherein the APD provides both high optical coupling efficiency and low dark count rate. The APD is formed such that it provides an active region of sufficient width to enable high optical coupling efficiency and a l...
04/19/2007
20060148188Fabrication method for bipolar integrated circuits
A fabrication method is applied to the bipolar integrated circuit, which combines with various patterns of the masks using in the different processes to form a combination mask. By using the combination mask, a silicon dioxide layer is etched to produce the open windows...
07/06/2006
20060091407Multi-wavelength light receiving element and method of fabricating same
Disclosed is a multi-wavelength light receiving element. The multi-wavelength light receiving element includes a first type substrate. A first intrinsic layer is positioned on the first type substrate. A heavily-doped second-type buried layer is positioned on the first ...
05/04/2006
20050118772METHOD FOR FABRICATING A VERTICAL BIPOLAR JUNCTION TRANSISTOR
A semiconductor wafer includes a first doping region of a first conductivity type, a second doping region of a second conductivity type, and a plurality of isolated structures positioned on surfaces of the first doping region and the second doping region. A third doping...
06/02/2005
 
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