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| Application No. | Application Title | Issue Date |
| 20120068151 | Light emitting and lasing semiconductor methods and devices The invention is applicable for use in conjunction with a light-emitting semiconductor structure that includes a semiconductor active region of a first conductivity type containing a quantum size region and having a first surface adjacent a semiconductor input region of... | 03/22/2012 |
| 20120009709 | SILICON LIGHT EMITTING DEVICE UTILISING REACH-THROUGH EFFECTS A light emitting device comprises a body of an indirect bandgap semiconductor material. A junction region is formed between a first region in the body of a first doping kind and a second region of the body of a second doping kind of first concentration. A third region o... | 01/12/2012 |
| 20110318857 | Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof Provided is a nitride semiconductor light emitting device including: a substrate; a first buffer layer formed above the substrate; an indium-containing second buffer layer formed above the first buffer layer; an indium-containing third buffer layer formed above the seco... | 12/29/2011 |
| 20110312106 | METHOD FOR PREPARING A LIGHT-EMITTING DEVICE USING GAS CLUSTER ION BEAM PROCESSING A method of manufacturing semiconductor-based light-emitting devices, such as light-emitting diodes (LEDs), is described. The method comprises irradiating an interface region with a gas cluster ion beam (GCIB) to improve the interface region between a light-emitting dev... | 12/22/2011 |
| 20110281387 | METHOD OF MANUFACTURING A LASER GAIN MEDIUM HAVING A SPATIALLY VARIABLE GAIN PROFILE Method of manufacturing a laser medium with a material having a surface and a dopant in the material distributed whereby the material has a spatially variant optical flux density profile uses tailored non-uniform gain profiles within a Yb:YAG laser component (rod, slab,... | 11/17/2011 |
| 20110253975 | Semiconductor Material Doping A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quan... | 10/20/2011 |
| 20110210353 | LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at lea... | 09/01/2011 |
| 20110147790 | Light Emitting Diode and Fabricating Method thereof A light emitting diode and a fabricating method thereof are provided. The method including the steps of sequentially forming a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first region and a second region on a subst... | 06/23/2011 |
| 20110049541 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode ... | 03/03/2011 |
| 20110049542 | AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs The present invention makes available AlxGa(1-x)As (0≦x≦1) substrates, epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infr... | 03/03/2011 |
| 20100230665 | DEVICE, METHOD AND SYSTEM FOR LIGHTING It is presented an organic LED device 101 with, when in use, a predetermined pattern on its light emitting parts. The organic LED device 101 comprises an anode 105, a cathode 103, and an organic light emitting layer 107. The organic li... | 09/16/2010 |
| 20100219445 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND LAMP A buffer layer 12 composed of at least a Group III nitride compound is laminated on a substrate 11 composed of sapphire, and an n-type semiconductor layer 14, a light-emitting layer 15, and a p-type semiconductor layer 16 are laminated... | 09/02/2010 |
| 20100219418 | DIAMOND LED DEVICES AND ASSOCIATED METHODS LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single ... | 09/02/2010 |
| 20100001313 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a first conductive type lower semiconductor layer, a current diffusion layer, a first conductive type upper semiconductor layer, an active layer, and a secon... | 01/07/2010 |
| 20100003777 | Quantum Photonic Imagers and Methods of Fabrication Thereof Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, t... | 01/07/2010 |
| 20090315067 | SEMICONDUCTOR DEVICE FABRICATION METHOD AND STRUCTURE THEREOF A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epit... | 12/24/2009 |
| 20090250693 | Thin film transistor, display device, including the same, and associated methods A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, an... | 10/08/2009 |
| 20090166606 | Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to... | 07/02/2009 |
| 20090086784 | Quantum well intermixing Embodiments of a method of quantum well intermixing (QWI) comprise providing a wafer comprising upper and lower epitaxial layers, which each include barrier layers, and a quantum well layer disposed between the upper and lower epitaxial layers, applying at least one sac... | 04/02/2009 |
| 20080315244 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminate... | 12/25/2008 |
| 20080142781 | Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to... | 06/19/2008 |
| 20080087876 | Method for Fabricating Lateral Semiconductor Device A lateral junction semiconductor device and method for fabricating the same comprising the steps of taking a semiconductor structure having a stack formed by a plurality of layers of semiconductor material arranged in a series of substantially parallel planes, the semic... | 04/17/2008 |
| 20080081390 | Nitride-based light emitting heterostructure An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure incl... | 04/03/2008 |
| 20080054279 | Phosphor Position in Light Emitting Diodes A method of forming an LED lamp with a desired distribution of phosphor is disclosed. The method includes the steps of mixing a plurality of phosphor particles in an uncured polymer resin for which the viscosity can be controlled in response to temperature to form a sub... | 03/06/2008 |
| 20070029553 | Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices A method of fabricating a semiconductor device includes forming a strained first semiconductor layer on an insulating layer that is between second semiconductor layers. The strained first semiconductor layer may be epitaxially grown from the second semiconductor layers ... | 02/08/2007 |
| 20070024185 | ORGANIC EL DISPLAY An organic EL element includes a pair of electrodes and an emitting layer interposed therebetween. The emitting layer is made of a mixture containing a host material and a dopant material. In the emitting layer, a concentration profile of the dopant material along a thi... | 02/01/2007 |
| 20060281327 | SEMICONDUCTOR LASER ELEMENT AND METHOD OF FABRICATION THEREOF A semiconductor laser element having an advantageous vertical light confinement efficiency, a low threshold current and a low element resistance is provided. The semiconductor laser element has a substrate and a stacked structure formed thereon, where the stacked struct... | 12/14/2006 |
| 20060017061 | Nitride semiconductor light emitting device A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side ... | 01/26/2006 |
| 20050106771 | Group III-V compound semiconductor and group III-V compound semiconductor device using the same An AlGaInP layer is formed on a substrate made of GaAs, and an AlGaAs layer is formed on the AlGaInP layer via a buffer layer therebetween. The buffer layer has a thickness of about 1.1 nm and is made of AlGaInP whose Ga content is smaller than that of the AlGaInP layer... | 05/19/2005 |
