Class 438/368 - Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process including the simultaneous outdiffusing of electrically
No. of applications: 3
Last issue date: 01/11/2007

Application No.	Application Title	Issue Date
20070007572	Capacitor fabrication methods and capacitor constructions A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode and c...	01/11/2007
20050073026	Semiconductor device with a toroidal-like junction Formation of elements of a vertical bipolar transistor is described, in particular a vertical npn transistor formed on a p-type substrate. Accordingly, an improved method not limited by constraints of photolithography, and an ensuing device made by such methods, is desc...	04/07/2005
20050012143	Semiconductor device and method of manufacturing the same An aspect of the present invention provides a semiconductor device that includes a semiconductor base including, a semiconductor substrate of a first conductivity type and a drain region of the first conductivity type formed on the semiconductor substrate and having a l...	01/20/2005

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