Class 438/36 - Ordered or disordered

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making a semiconductor device wherein a compound
No. of applications: 22
Last issue date: 02/09/2012

Application No.	Application Title	Issue Date
20120032187	Lattice-Mismatched GaInP LED Devices and Methods of Fabricating Same A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided b...	02/09/2012
20110227038	SEMICONDUCTOR LIGHT EMITTING DEVICE AND A PRODUCTION METHOD THEREOF A semiconductor light emitting device comprising a semiconductor layer of (Al_yGa_1-y)_xIn_1-xP (0<x≦1, 0≦y≦1) that consists of a first semiconductor layer of a first electrical conduction type, an active layer of a multi...	09/22/2011
20110223701	GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base ...	09/15/2011
20110133204	LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF A light emitting diode includes a thermal conductive substrate, an p-type GaN layer, an active layer and an n-type GaN layer sequentially stacked above the substrate and an electrode pad deposited on the n-type GaN layer. A surface of n-type GaN layer away from the acti...	06/09/2011
20110051771	Optoelectronic Component and Method for Producing an Optoelectronic Component An optoelectronic component contains an epitaxial layer sequence (6) based on a nitride compound semiconductor having an active layer (4) and, wherein the epitaxial growth substrate (1) comprises Al_1-xGa_xN, where 0<x<0.95...	03/03/2011
20110017976	ULTRAVIOLET LIGHT EMITTING DIODE/LASER DIODE WITH NESTED SUPERLATTICE A light emitting device with a template comprising a substrate and a nested superlattice. The superlattice has Al_1-x-yIn_yGa_xN wherein 0≦x≦α and 0≦y≦1 with x increasing with distance from said substrate. An ultraviolet light-emit...	01/27/2011
20100155709	ENCAPSULATION FOR AN ELECTRONIC THIN FILM DEVICE The present invention relates to an encapsulation for an electronic thin film device, comprising a first barrier layer (108), a second barrier layer (112), and a first planarization layer (110′) for reducing the formation of pinholes in a subseque...	06/24/2010
20100105158	METHOD OF FABRICATING SEMICONDUCTOR DEVICE A method of fabricating a semiconductor device having high output power and excellent long-term reliability by preventing thermal adverse influence exerted at the time of window structure formation is provided. The method comprises a 1st step of forming predetermined se...	04/29/2010
20090230397	DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface...	09/17/2009
20090140267	SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Disclosed are a semiconductor light emitting device comprising a single crystalline buffer layer and a manufacturing method thereof. The semiconductor light emitting device comprises a single crystalline buffer layer, and a compound semiconductor structure comprising II...	06/04/2009
20090080483	SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and the s...	03/26/2009
20090001349	LIGHT-EMITTING NANOCOMPOSITE PARTICLES A method of making an inorganic light emitting layer includes combining a solvent for semiconductor nanoparticle growth, a solution of core/shell quantum dots, and semiconductor nanoparticle precursor(s); growing semiconductor nanoparticles to form a crude solution of c...	01/01/2009
20080176351	MANUFACTURING METHOD OF DISPLAY DEVICE The present invention provides a manufacturing method of a display device which can prevent the reduction of a size of a pseudo single-crystalline region having strip-like crystals in forming such a pseudo single-crystalline silicon region on a substrate. A step for for...	07/24/2008
20080128678	Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit ligh...	06/05/2008
20080112451	Semiconductor Laser Diode With Narrow Lateral Beam Divergence The invention relates to high power broad-area semiconductor lasers incorporating a structure that provides both gain guiding and index guiding. The lateral width of the index guiding region is greater than the lateral width of the gain guiding region by at least 20 mic...	05/15/2008
20080061302	LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME A light emitting diode comprises an N-type semiconductor layer comprising a horizontal lattice defect layer, an active layer on the N-type semiconductor layer, and a P-type semiconductor layer on the active layer....	03/13/2008
20070257253	ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME An organic light emitting display device and a method of fabricating the same are provided. A trench is formed in a planarization layer, and then a first electrode is formed to have opposite ends in the trench, thereby reducing a height difference between the planarizat...	11/08/2007
20070238209	Modulation of Step Function Phenomena by Varying Nanoparticle Size The present invention is directed to methods and systems of modulating step function phenomena by varying nanoparticle size—particularly wherein a plurality of such nanoparticles are employed, and wherein said nanoparticles comprise a size distribution favorable for c...	10/11/2007
20070029553	Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices A method of fabricating a semiconductor device includes forming a strained first semiconductor layer on an insulating layer that is between second semiconductor layers. The strained first semiconductor layer may be epitaxially grown from the second semiconductor layers ...	02/08/2007
20050227398	Method of manufacturing an electrical lead An electrically conductive member (10) includes an elongate body (11) which has at least one electrically conductive region (20). The electrically conductive region (20) comprises a porous polymeric material coated with an electrically conduc...	10/13/2005
20050205863	Highly efficient organic light-emitting device using substrate or electrode having nanosized half-spherical convex and method for preparing the same The present invention provides a transparent substance formed with a plurality of continuous half-spherical convexes having a diameter of 25˜1,000 nm on its first main surface; an organic light-emitting device comprising a substrate, a first electrode, an organic mater...	09/22/2005
20050095749	Device for protecting a chip and method for operating a chip A device for protecting a chip has a chamber adapted to receive the chip, a window allowing radiation to pass therethrough and to impinge the chip and a gas inlet. The gas inlet is in communication with the chamber and adapted to receive from a gas supply a gas flow, th...	05/05/2005

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Class 438/36 - Ordered or disordered