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| Application No. | Application Title | Issue Date |
| 20120104445 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME An embodiment of the invention provides a chip package which includes: a substrate having a surface; a first conducting layer located on the surface; a second conducting layer located on the surface, wherein the first conducting layer and the second conducting layer are... | 05/03/2012 |
| 20120104359 | Method of Fabricating Optical Devices Using Laser Treatment of Contact Regions of Gallium and Nitrogen Containing Material A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.... | 05/03/2012 |
| 20120107968 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF ESTIMATING DAMAGE FROM FORMATION OF SCRIBE GROOVE A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode electrode... | 05/03/2012 |
| 20120083059 | SAPPHIRE WAFER DIVIDING METHOD A sapphire wafer dividing method including a cut groove forming step of forming a plurality of cut grooves on the back side of a sapphire wafer along a plurality of crossing division lines formed on the front side where a light emitting layer is formed, a modified layer... | 04/05/2012 |
| 20120070927 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater th... | 03/22/2012 |
| 20120043578 | GaN-Based Light-Emitting Diode and Method for Manufacturing the Same A GaN-based LED and a method for manufacturing the same are provided, and the method includes: providing a substrate, depositing a first transition layer on the substrate; forming a first patterned transition layer by etching with a mask; growing a first epitaxial layer... | 02/23/2012 |
| 20120037930 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, OPTOELECTRONIC COMPONENT, AND COMPONENT ARRANGEMENT HAVING A PLURALITY OF OPTOELECTRONIC COMPONENTS A method for producing optoelectronic components including A) providing a growth substrate with a semiconductor layer arranged thereon that produces a zone which is active during operation, B) applying separating structures on the semiconductor layer, C) applying a mult... | 02/16/2012 |
| 20120020610 | Optoelectronic Modules and a Method for Manufacturing an Array of Optical Devices An array of optical devices includes singlets diced or separated from a first diced surface and a second diced surface of a semiconductor wafer. Each singlet includes a single optical emitter or a single photosensitive semiconductor device. The singlets are identified a... | 01/26/2012 |
| 20120018752 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost ... | 01/26/2012 |
| 20120012868 | LIGHT EMITTING CHIP PACKAGE MODULE AND LIGHT EMITTING CHIP PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF A light emitting chip package module includes a substrate, a light emitting chip package structure, and a magnetic device. The substrate has a surface. The light emitting chip package structure is disposed on the surface of the substrate. The light emitting chip package... | 01/19/2012 |
| 20120009705 | Techniques of Forming Ohmic Contacts on GaN Light Emitting Diodes A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a ga... | 01/12/2012 |
| 20110315999 | Gallium and Nitrogen Containing Triangular or Diamond-shaped Configuration for Optical Devices A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.... | 12/29/2011 |
| 20110309373 | Singulation Method and Resulting Device of Thick Gallium and Nitrogen Containing Substrates A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe... | 12/22/2011 |
| 20110312115 | LASER MACHINING METHOD AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT Provided is a laser machining method in which, when modified regions are formed plural number of times by changing the depth in the thickness direction of a substrate, displacement of the formed modified regions from a planned cutting line is inhibited. Specifically pro... | 12/22/2011 |
| 20110297979 | PASSIVATION FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched s... | 12/08/2011 |
| 20110300653 | METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction of ... | 12/08/2011 |
| 20110299560 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE In the method for fabricating a III-nitride semiconductor laser device, a substrate product is formed, and the substrate product has a laser structure including a substrate that is made of a hexagonal III-nitride semiconductor and has a semipolar primary surface, and th... | 12/08/2011 |
| 20110292959 | SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME A semiconductor laser device includes a semiconductor laminated film including a ridge stripe portion. The semiconductor laminated film includes a first scribed level-different portion formed in a resonator surface which is an edge surface thereof intersecting the ridge... | 12/01/2011 |
| 20110284911 | LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREOF A light emitting diode (LED) chip includes a substrate, a light emitting semiconductor device, a first electrode, and a second electrode. The light emitting semiconductor device has a recess and includes a first portion and a second portion. The first portion is dispose... | 11/24/2011 |
| 20110284906 | VERTICAL LIGHT EMITTING DIODE DEVICE STRUCTURE AND METHOD OF FABRICATING THE SAME A method of fabricating a compound semiconductor vertical LED is provided. A first growth substrate capable of supporting compound semiconductor epitaxial growth thereon is provided. One or more epitaxial layers of compound semiconductor material such as GaN or InGaN is... | 11/24/2011 |
| 20110281383 | METHOD FOR MANUFACTURING HIGH EFFICIENCY LIGHT-EMITTING DIODES A method for manufacturing a light-emitting device comprising the steps of: providing a substrate comprising a first surface and a second surface; forming a plurality of cutting lines on the substrate by a laser beam; cleaning the substrate by a chemical solution; and f... | 11/17/2011 |
| 20110275172 | Method of manufacturing semiconductor light-emitting device A method of manufacturing a semiconductor light-emitting device which includes the steps of forming a plurality of light-emitting device sections (40), having an approximately rectangular shape in plan view, on a substrate (10) in a matrix shape, forming a... | 11/10/2011 |
| 20110266569 | LED WAFER WITH LAMINATED PHOSPHOR LAYER An LED wafer with a growth substrate is attached to a carrier substrate by, for example, a heat-releasable adhesive so that the LED layers are sandwiched between the two substrates. The growth substrate is then removed, such as by laser lift-off. The exposed surface of ... | 11/03/2011 |
| 20110260176 | LIGHT-EMITTING SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME A light-emitting sensor device is provided with: a substrate (110); an irradiating part (120), disposed on the substrate, for applying light to a specimen; a light receiving part (150), disposed on the substrate, for detecting light from the specime... | 10/27/2011 |
| 20110263058 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride s... | 10/27/2011 |
| 20110244612 | OPTICAL DEVICE WAFER PROCESSING METHOD An optical device wafer processing method for dividing an optical device wafer into individual optical devices along a plurality of crossing streets formed on the front side of the wafer. The wafer is composed of a substrate and an optical device layer formed on the fro... | 10/06/2011 |
| 20110241059 | LED DIE STRUCTURE AND METHOD FOR MANUFACTURING THE BOTTOM TERMINAL THEREOF An LED die structure and a method for manufacturing the bottom terminal of the LED die structure, wherein the LED die includes a substrate, a light-emitting layer positioned at the top of the substrate, at least one bottom terminal positioned at the bottom of the substr... | 10/06/2011 |
| 20110233565 | HYBRID COMBINATION OF SUBSTRATE AND CARRIER MOUNTED LIGHT EMITTING DEVICES A multi-chip light emitting device (LED) uses a low-cost carrier structure that facilitates the use of substrates that are optimized to support the devices that require a substrate. Depending upon the type of LED elements used, some of the LED elements may be mounted on... | 09/29/2011 |
| 20110233585 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a f... | 09/29/2011 |
| 20110233516 | OPTICAL SEMICONDUCTOR DEVICE INCLUDING PROTRUSION STRUCTURE OF PARALLELOGRAM CELLS AND ITS MANUFACTURING METHOD In an optical semiconductor device including a support body, semiconductor layers made of (AlzGa1-z)1-xInxP (0≦z≦1, 0≦x≦1) having a light emitting layer provided above the support body, a first ohmic electrode layer pr... | 09/29/2011 |
| 20110228804 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29... | 09/22/2011 |
| 20110229993 | METHOD OF FABRICATING A LIGHT EMITTING DIODE CHIP HAVING PHOSPHOR COATING LAYER A method of fabricating light emitting diode chips having a phosphor coating layer comprises providing a substrate having a plurality of light emitting diodes formed thereon; forming a conductive bump on at least one of the plurality of light emitting diodes; forming a ... | 09/22/2011 |
| 20110229997 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE In one embodiment, a method for manufacturing a semiconductor light emitting device characterized by bonding a first stacked body to a second stacked body is disclosed. The first stacked body includes a first substrate, a semiconductor layer, and a first metal layer. Th... | 09/22/2011 |
| 20110220910 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a barrier metal layer, a first metal pillar, a second metal p... | 09/15/2011 |
| 20110220868 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Discussed are a nitride semiconductor light emitting device in which a critical angle is increased by rounding corners of a substrate so as to improve light extraction efficiency due to increase in an amount of light generated from the inside thereof and extracted to th... | 09/15/2011 |
| 20110216798 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN subs... | 09/08/2011 |
| 20110204412 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT Provided is a method for manufacturing a semiconductor light emitting element, by which semiconductor light emitting elements having excellent light extraction efficiency can be manufactured at high yield. The method includes: a grinding step for grinding a surface to b... | 08/25/2011 |
| 20110204396 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a semiconductor light emitting device includes a semiconductor stack, a first electrode, a second electrode, a first interconnect, an insulating film, and a second interconnect. The semiconductor stack includes a first major surface, a secon... | 08/25/2011 |
| 20110207253 | FLIP-CHIP LED MODULE FABRICATION METHOD A flip-chip LED module fabrication method includes the steps of (a) growing an epitaxial layer consisting of a N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer on a wafer substrate, (b) dividing the wafer into individual light-emitting... | 08/25/2011 |
| 20110195538 | METHOD OF FABRICATING LIGHT EMITING DIODE CHIP The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers... | 08/11/2011 |
