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| Application No. | Application Title | Issue Date |
| 20120106583 | VERTICALLY-COUPLED SURFACE-ETCHED GRATING DFB LASER A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through th... | 05/03/2012 |
| 20120068090 | FREQUENCY TUNABLE TERAHERTZ TRANSCEIVERS AND METHOD OF MANUFACTURING DUAL WAVELENGTH LASER Provided are a frequency tunable terahertz transceiver and a method of manufacturing a dual wavelength laser. The frequency tunable terahertz transceiver includes: a dual wavelength laser including two distributed feedback lasers that are manufactured in one substrate a... | 03/22/2012 |
| 20120068214 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME An optoelectronic device is provided that includes a substrate having a surface and a normal direction perpendicular to the surface, a first semiconductor layer formed on the surface, and at least one hollow component formed between the first semiconductor layer and the... | 03/22/2012 |
| 20110306155 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE A method for producing a semiconductor optical device includes the steps of forming a semiconductor layer; forming a non-silicon-containing resin layer; forming a first pattern in the non-silicon-containing resin layer; forming a silicon-containing resin layer; etching ... | 12/15/2011 |
| 20110306156 | SURFACE GRATINGS ON VCSELS FOR POLARIZATION PINNING Methods for manufacturing a polarization pinned vertical cavity surface emitting laser (VCSEL). Steps include growing a lower mirror on a substrate; growing an active region on the lower mirror; growing an upper mirror on the active region; depositing a grating layer on... | 12/15/2011 |
| 20110272724 | ALGAINP-BASED LIGHT-EMITTING DIODE WITH DOUBLE REFLECTIVE LAYERS AND FABRICATION METHOD THEREOF The invention discloses an AlGaInP-based LED with double reflective layers and a fabrication method thereof. The method includes: providing a temporary substrate; forming an epitaxial layer on a front of the temporary substrate; forming a distributed Bragg reflector on ... | 11/10/2011 |
| 20110261856 | VERTICAL-CAVITY SURFACE-EMITTING LASER A VCSEL includes a grating layer configured with a non-periodic, sub-wavelength grating, in which the non-periodic, sub-wavelength grating includes at least one first section configured to have a relatively low reflection coefficient and at least one second section conf... | 10/27/2011 |
| 20110261465 | DIFFRACTIVE COMBINER FOR MULTICOLOR AND MONOCHROME DISPLAY, METHOD OF MANUFACTURE AND HEAD-UP DISPLAY DEVICE USING SAME A method for producing a single-layer diffractive combiner for a head-up display having a projection unit with n light sources of λi wavelength(s), where i=1 to n sending light towards the combiner at an angle θp. The method includes forming interference fringes for e... | 10/27/2011 |
| 20110249697 | PUSH-PULL MODULATED COUPLED VERTICAL-CAVITY SURFACE-EMITTING LASERS AND METHOD A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the sec... | 10/13/2011 |
| 20110243175 | SEGMENTED DISTRIBUTED FEEDBACK LASER The present invention provides for a semiconductor laser having a narrow linewidth and low power consumption for optical communication applications. According to various embodiments of the invention, a semiconductor laser is provided which includes a grating layer compr... | 10/06/2011 |
| 20110241051 | Organic Electroluminescent Device An organic electroluminescent device comprising: a substrate; a first electrode disposed over the substrate for injecting charge of a first polarity; a second electrode disposed over the first electrode for injecting charge of a second polarity opposite to said first po... | 10/06/2011 |
| 20110229079 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE OPTICAL SEMICONDUCTOR DEVICE An optical semiconductor device, includes: a plurality of first diffraction grating layers disposed at a spacing from each other along first direction above first semiconductor layer, length of a lower surface of each of a plurality of first diffraction gratings along f... | 09/22/2011 |
| 20110222569 | SEMICONDUCTOR LASER, SEMICONDUCTOR LASER DEVICE, AND FABRICATION METHOD OF SEMICONDUCTOR LASER A semiconductor laser that includes: a substrate; a first semiconductor multilayer reflector of a first conductive type formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a sec... | 09/15/2011 |
| 20110212556 | PROCESS TO FORM A MOLD OF NANOIMPRINT TECHNIQUE FOR MAKING DIFFRACTION GRATING FOR DFB-LD A process using the nanoimprint technique to form the diffraction grating for the DFB-LD is disclosed. The process includes (a) coating a resist for the EB exposure on a dummy substrate, (b) irradiating the resist as varying the acceleration voltage, (c) forming a resis... | 09/01/2011 |
| 20110176572 | VCSEL WITH NON-CIRCULAR MESA AND CURRENT CONFINEMENT APERTURE FOR HIGHER-ORDER LATERAL MODE EMISSION A vertical cavity surface emitting laser (VCSEL) (100) has a substrate (104), on which are disposed first and second distributed Bragg reflectors (DBRs) (106, 112), each DBR comprising a stack of layers of alternating refractive index, an active lay... | 07/21/2011 |
| 20110134956 | PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion impl... | 06/09/2011 |
| 20110092007 | Method of Fabricating Antireflective Grating Pattern and Method of Fabricating Optical Device Integrated with Antireflective Grating Pattern A method of fabricating an antireflective grating pattern and a method of fabricating an optical device integrated with an antireflective grating pattern are provided. The method of fabricating the antireflective grating pattern includes forming a photoresist (PR) patte... | 04/21/2011 |
| 20110012160 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE A semiconductor light-emitting device 100 includes a semiconductor layer 2 including an active layer, a supporting substrate 11 for supporting the semiconductor layer 2, and an attachment layer 15 for bonding a main surface of the semi... | 01/20/2011 |
| 20100327305 | PHOTONIC STRUCTURES FOR EFFICIENT LIGHT EXTRACTION AND CONVERSION IN MULTI-COLOR LIGHT EMITTING DEVICES A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising se... | 12/30/2010 |
| 20100301369 | HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) WITH OPTIMIZED PHOTONIC CRYSTAL EXTRACTOR A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or more o... | 12/02/2010 |
| 20100197057 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE A method for manufacturing a semiconductor optical device having an optical grating, includes the steps of: forming a semiconductor layer, an insulating layer and a first resin layer not containing silicon (Si); forming a second resin layer containing silicon (Si) on th... | 08/05/2010 |
| 20100189147 | Semiconductor Devices and Methods for Generating Light Semiconductor devices and a method for generating light in a semiconductor device are invented and disclosed. The method includes the steps of forming a vertical cavity surface emitting laser including an active region and an oxide layer, the active region separated fro... | 07/29/2010 |
| 20100151608 | METHOD OF MANUFACTURING A SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE Disclosed is a method of manufacturing a substrate for an organic EL device, the method comprising the step of: filling grooves of the optical element with sol-gel coating solution or organic metal cracking solution when a diffraction grating 12 is formed on the ... | 06/17/2010 |
| 20100104235 | Distributed Bragg Reflector Waveguide and Fabricating Method Thereof A method for fabricating a distributed Bragg reflector waveguide is disclosed, which includes forming a first distributed Bragg reflector on a substrate; forming a sacrificial pattern on the first distributed Bragg reflector; forming a second distributed Bragg reflector... | 04/29/2010 |
| 20100098127 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT A method of manufacturing a nitride semiconductor light emitting element includes: forming a stacked layer body of a nitride semiconductor having a second conductive-type layer, a light emitting layer, and a first conductive-type layer stacked on a growth substrate in t... | 04/22/2010 |
| 20100081224 | METHOD OF FORMING DIFFRACTION GRATING AND METHOD OF FABRICATING DISTRIBUTED FEEDBACK LASER DIODE A method of forming a diffraction grating according to the present invention includes a step of preparing a mold having projections and recesses for forming a diffraction grating, a step of bringing the projections and recesses of the mold into contact with a resin laye... | 04/01/2010 |
| 20100022044 | LASER DEVICE, LASER MODULE, SEMICONDUCTOR LASER AND FABRICATION METHOD OF SEMICONDUCTOR LASER A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and h... | 01/28/2010 |
| 20100022043 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME A method of manufacturing semiconductor laser device capable of reducing κL, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction gra... | 01/28/2010 |
| 20090317928 | HIGH TEMPERATURE STABLE FIBER GRATING SENSOR AND METHOD FOR PRODUCING SAME A method of producing a thermally stable grating allows the grating to be placed in environments where temperatures reach 1000° C. and where the grating is relatively stable and has very low loss from scatter. These gratings have spectral characteristics that allow the... | 12/24/2009 |
| 20090305446 | HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) WITH OPTIMIZED PHOTONIC CRYSTAL EXTRACTOR A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or more o... | 12/10/2009 |
| 20090286342 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, SURFACE-EMISSION LASER DIODE, AND PRODUCTION APPARATUS THEREOF, PRODUCTION METHOD, OPTICAL MODULE AND OPTICAL TELECOMMUNICATION SYSTEM A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated... | 11/19/2009 |
| 20090253224 | Nanocrystal structures A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a meta... | 10/08/2009 |
| 20090246903 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE The present invention includes forming an optical guide layer on a substrate, forming a cap layer on the optical guide layer, and forming openings in parts of the optical guide layer and the cap layer to form a diffraction grating from part of the optical guide layer. T... | 10/01/2009 |
| 20090170229 | METHOD FOR PRODUCING A MODULATED GRATING FOR AN OPTIMAL REFLECTION SPECTRUM Method for producing a modulated grating for an optimal reflection spectrum, which grating is a multiple wavelength reflector. The method includes the following steps: a) Determining wavelengths to be reflected b) Calculating a preliminary grating c) Comparing the refle... | 07/02/2009 |
| 20090152533 | INCREASING THE EXTERNAL EFFICIENCY OF LIGHT EMITTING DIODES The present disclosure relates to increasing the external efficiency of light emitting diodes, and specifically to increasing the outcoupling of light from an organic light emitting diode utilizing a diffraction grating.... | 06/18/2009 |
| 20090155944 | Surface Emitting Laser Device and Production Method A surface emitting laser device is disclosed that is able to selectively add a sufficiently large loss to a high order transverse mode so as to efficiently suppress a high order transverse mode oscillation and to oscillate at high output in a single fundamental transver... | 06/18/2009 |
| 20090147807 | Fiber grating laser A fiber (Bragg) laser comprising a fiber with a cladding and a core having a (Bragg) grating inscribed in the core forming a laser cavity.... | 06/11/2009 |
| 20090146165 | LED Structure A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the fi... | 06/11/2009 |
| 20090116522 | Enhanced efficiency laterally-coupled distributed feedback laser The invention describes the method and apparatus for enhanced efficiency in a laterally-coupled distributed feedback (LC-DFB) laser. In a device featuring the effective ridge design, lateral confinement of the guided optical modes is provided by a surface etched grating... | 05/07/2009 |
| 20090117678 | Semiconductor laser with a weakly coupled grating A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged i... | 05/07/2009 |
