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A vest or belt is integrally formed with tubular, pet receiving passageways which extend around the wearer's body and terminate in pocket-like chambers for feeding and retrieval.
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| Application No. | Application Title | Issue Date |
| 20080003782 | Multilayer gettering structure for semiconductor device and method In one embodiment, a multi-layer extrinsic gettering structure includes plurality of polycrystalline semiconductor layers each separated by a dielectric layer.... | 01/03/2008 |
| 20070080335 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a semiconductor structure, comprising a gettering region proximate to a device region in a semiconductor wafer. The gettering region includes a precisely-determined arrangement of a plurality of precisely-formed voids through a s... | 04/12/2007 |
| 20050245052 | Semiconductor device having a gettering layer A multi-chip-package (MCP) module includes a plurality of semiconductor chips layered one on another. The lower semiconductor chip includes a semiconductor substrate having a top active layer and a bottom heavily-doped layer. The bottom of the heavily-doped layer is pol... | 11/03/2005 |
| 20050104100 | Solid-state image sensor A solid-state image sensor of the present invention has a plurality of pixel cells that generate signal charges in accordance with incident light. It is characterized by having a gettering region within the area of a pixel cell. The gettering region, which is disposed c... | 05/19/2005 |
| 20050045900 | Protected organic electronic device structures incorporating pressure sensitive adhesive and desiccant Organic electronic device structures are provided, which comprise: (a) a first portion comprising a substrate and an organic electronic device region (e.g., an OLED region) disposed over the substrate; (b) a second portion comprising a cover and a getter region; and (c)... | 03/03/2005 |
| 20050029683 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is anneal... | 02/10/2005 |
| 20050017273 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is anneal... | 01/27/2005 |
