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| Application No. | Application Title | Issue Date |
| 20120105094 | METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC BIPOLAR JUNCTION TRANSISTOR THEREOF A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT are provided. The SiC BJT comprises an emitter region, a base region and a collector region. The collector region is arranged on a substrate having an off-axis orientation ... | 05/03/2012 |
| 20120104555 | Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances This invention discloses an insulated gate bipolar transistor (IGBT) device formed in a semiconductor substrate. The IGBT device has a split-shielded trench gate that includes an upper gate segment and a lower shield segment. The IGBT device may further include a dummy ... | 05/03/2012 |
| 20120032303 | Bipolar Junction Transistor Based on CMOS Technology The present invention relates to semiconductor technologies, and more particularly to a bipolar junction transistor (BJT) in a CMOS base technology and methods of forming the same. The BJT includes a semiconductor substrate having an emitter region, a base having a firs... | 02/09/2012 |
| 20120007103 | SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR The present disclosure relates to a silicon carbide (SiC) bipolar junction transistor (BJT), where the surface region between the emitter and base contacts (1, 2) on the transistor is given a negative electric surface potential with respect to the potential in th... | 01/12/2012 |
| 20110304019 | METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICES OBTAINED THEREBY Methods for manufacturing a bipolar transistor semiconductor device are described, along with devices fabricated in accordance with the methods. The methods include the steps of forming a stack of layers over a semiconductor body comprising a window definition layer ( 12/15/2011 | |
| 20110248375 | Bipolar Transistor with an N-Type Base and Method of Production A base contact connection, an emitter structure and a collector structure are arranged on an n-layer, which can be provided for additional npn transistors. The collector structure is arranged laterally to the emitter structure and at least one of the emitter and collect... | 10/13/2011 |
| 20110175198 | ESD PROTECTION WITH INCREASED CURRENT CAPABILITY A stackable electrostatic discharge (ESD) protection clamp (21) for protecting a circuit core (24) comprises, a bipolar transistor (56, 58) having a base region (74, 51, 52, 85) with a base contact (77) therein and an emitter (78 | 07/21/2011 |
| 20110133289 | MULTIPLE DOPING LEVEL BIPOLAR JUNCTIONS TRANSISTORS AND METHOD FOR FORMING A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A fir... | 06/09/2011 |
| 20110115054 | SEMISPHERICAL INTEGRATED CIRCUIT STRUCTURES A diode comprises a substrate formed of a first material having a first doping polarity. The substrate has a planar surface and at least one semispherical structure extending from the planar surface. The semispherical structure is formed of the first material. A layer o... | 05/19/2011 |
| 20110111572 | Memory Including Bipolar Junction Transistor Select Devices An array is formed by a plurality of cells, wherein each cell is formed by a bipolar junction selection transistor having a first, a second, and a control region. The cell includes a common region, forming the second regions of the selection transistors, and a plurality... | 05/12/2011 |
| 20110101444 | ELECTROSTATIC PROTECTION DEVICE An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separat... | 05/05/2011 |
| 20110095398 | BIPOLAR SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME A bipolar semiconductor device includes a collector region that is an n-type low-resistance layer formed in one surface of a semiconductor crystal substrate, an n-type first high-resistance region on the collector region, a p-type base region on the first high-resistanc... | 04/28/2011 |
| 20110057289 | Ultrashallow Emitter Formation Using ALD and High Temperature Short Time Annealing An integrated circuit containing a bipolar transistor including an emitter diffused region with a peak doping density higher than 1·1020 atoms/cm3, and an emitter-base junction less than 40 nanometers deep in a base layer. A process of forming the... | 03/10/2011 |
| 20110026174 | Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first ba... | 02/03/2011 |
| 20110024791 | BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD A bipolar semiconductor device and method are provided. One embodiment provides a bipolar semiconductor device including a first semiconductor region of a first conductivity type having a first doping concentration, a second semiconductor region of a second conductivity... | 02/03/2011 |
| 20100295105 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME A method for manufacturing a semiconductor device includes: an element portion formation step of forming an element portion on a base layer; a delaminating layer formation step of forming a delaminating layer in the base layer; a bonding step of bonding the base layer h... | 11/25/2010 |
| 20100258799 | Bipolar transistor and method of manufacturing the same A bipolar transistor at least includes a semiconductor substrate including an N− epitaxial growth layer and a P− silicon substrate, an N+ polysilicon layer, a tungsten layer, two silicide layers, a base electrode, an emitter electrod... | 10/14/2010 |
| 20100181649 | POLYSILICON PILLAR BIPOLAR TRANSISTOR WITH SELF-ALIGNED MEMORY ELEMENT Memory cells having memory elements self-aligned with the emitters of bipolar junction transistor access devices are described herein, as well as methods for manufacturing such devices. A memory device as described herein comprises a plurality of memory cells. Memory ce... | 07/22/2010 |
| 20100176362 | POLYSILICON PLUG BIPOLAR TRANSISTOR FOR PHASE CHANGE MEMORY Memory devices and methods for manufacturing are described herein. A memory device described herein includes a plurality of memory cells. Memory cells in the plurality of memory cells comprise respective bipolar junction transistors and memory elements. The bipolar junc... | 07/15/2010 |
| 20100167446 | Method for Manufacturing a Junction The present invention relates to a semiconductor device comprising a homojunction or a heterojunction with a controlled dopant (concentration) profile and a method of making the same. Accordingly, one aspect of the invention is a method for manufacturing a junction comp... | 07/01/2010 |
| 20100163872 | Bipolar Junction Transistor and Method of Manufacturing the Same A bipolar junction transistor and a method of manufacturing a bipolar junction transistor are disclosed. An exemplary bipolar junction transistor includes a second conductivity type base region in a first conductivity type substrate, step-shaped recesses in the base reg... | 07/01/2010 |
| 20100078724 | TRANSISTOR-TYPE PROTECTION DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF THE SAME A transistor-type protection device includes: a semiconductor substrate; a well including a first-conductivity-type semiconductor formed in the semiconductor substrate; a source region including a second-conductivity-type semiconductor formed in the well; a gate electro... | 04/01/2010 |
| 20100001290 | BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor crystal includes a recombination-inhibiting semiconductor layer (17) of a second conductive type that is disposed in the vicinity of the surface between a base contact region (16) and emitter regions (14) and that separates the semic... | 01/07/2010 |
| 20100001319 | Method for Making a Heterojunction Bipolar Transistor The invention concerns a heterojunction bipolar transistor comprising a support, and epitaxially grown from said support, at least: one collecting, respectively emitting, layer; at least one base layer; and at least one emitting, respectively collecting, layer. The coll... | 01/07/2010 |
| 20090321879 | SILICIDED BASE STRUCTURE FOR HIGH FREQUENCY TRANSISTORS High frequency performance of (e.g., silicon) bipolar devices (100, 100″) is improved by reducing the extrinsic base resistance Rbx. Emitter (160), base (161) and collector (190) are formed in or on a semiconductor substrate (110). T... | 12/31/2009 |
| 20090315145 | ADJUSTABLE BIPOLAR TRANSISTORS FORMED USING A CMOS PROCESS By providing a novel bipolar device design implementation, a standard CMOS process (105-109) can be used unchanged to fabricate useful bipolar transistors (80) and other bipolar devices having adjustable properties by partially blocking the P or N w... | 12/24/2009 |
| 20090317983 | Process for Producing Silicon Carbide Semiconductor Device In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is t... | 12/24/2009 |
| 20090246928 | Semiconductor device with bipolar transistor and method of fabricating the same Disclosed is a semiconductor device with a bipolar transistor and method of fabricating the same. The device may include a collector region in a semiconductor substrate. A base pattern may be disposed on the collector region. A hard mask pattern may be disposed on the b... | 10/01/2009 |
| 20090231034 | Inverse mode SiGe HBT cascode device and fabrication method Disclosed is a device structure using an inverse-mode cascoded Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) beneficial in applications requiring radiation hardened circuitry. The device comprises a forward-mode common-emitter HBT cascoded with a comm... | 09/17/2009 |
| 20090200641 | Semiconductor device and method of manufacturing the same The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conducti... | 08/13/2009 |
| 20090179303 | Vertical Bipolar Transistor A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline se... | 07/16/2009 |
| 20090108749 | TRANSISTOR AND PROCESS OF PRODUCING THE SAME, LIGHT-EMITTING DEVICE, AND DISPLAY A transistor capable of modulating, at low voltages, a large current flowing between an emitter electrode and a collector electrode. A process of producing the transistor, a light-emitting device comprising the transistor, and a display comprising the transistor. The tr... | 04/30/2009 |
| 20080308837 | VERTICAL CURRENT CONTROLLED SILICON ON INSULATOR (SOI) DEVICE SUCH AS A SILICON CONTROLLED RECTIFIER AND METHOD OF FORMING VERTICAL SOI CURRENT CONTROLLED DEVICES A Silicon on Insulator (SOI) Integrated Circuit (IC) chip with devices such as a vertical Silicon Controlled Rectifier (SCR), vertical bipolar transistors, a vertical capacitor, a resistor and/or a vertical pinch resistor and method of making the device(s). The devices ... | 12/18/2008 |
| 20080164494 | BIPOLAR TRANSISTOR WITH SILICIDED SUB-COLLECTOR Embodiments of the invention provide a semiconductor device including a collector in an active region; a first and a second sub-collector, the first sub-collector being a heavily doped semiconductor material adjacent to the collector and the second sub-collector being a... | 07/10/2008 |
| 20080076228 | BIPOLAR DEVICE HAVING BURIED CONTACTS The invention, in one aspect, provides a semiconductor device that includes a collector for a bipolar transistor located within a semiconductor substrate and a buried contact, at least a portion of which is located in the collector to a depth sufficient that adequately ... | 03/27/2008 |
| 20080067631 | CREATING INCREASED MOBILITY IN A BIPOLAR DEVICE The mobility of charge carriers in a bipolar (BJT) device is increased by creating compressive strain in the device to increase mobility of electrons in the device, and creating tensile strain in the device to increase mobility of holes in the device. The compressive an... | 03/20/2008 |
| 20080064177 | Bipolar Device Having Improved Capacitance The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant... | 03/13/2008 |
| 20080017951 | METHOD OF FORMING A SELF-ALIGNED TRANSISTOR AND STRUCTURE THEREFOR In one embodiment, a transistor is formed to use two conductors to make electrical connection to one of the active regions of the transistor. ... | 01/24/2008 |
| 20080014705 | STRUCTURE AND METHOD FOR PERFORMANCE IMPROVEMENT IN VERTICAL BIPOLAR TRANSISTORS A method of forming a semiconductor device having two different strains therein is provided. The method includes forming a strain in a first region with a first straining film, and forming a second strain in a second region with a second straining film. Either of the fi... | 01/17/2008 |
| 20080003757 | Semiconductor Device Structures for Bipolar Junction Transistors and Methods of Fabricating Such Structures Semiconductor device structures for use with bipolar junction transistors and methods of fabricating such semiconductor device structures. The semiconductor device structure comprises a semiconductor body having a top surface and sidewalls extending from the top surface... | 01/03/2008 |
