System for magnetically attaching templeless eyewear to a person
A system of eyewear that eliminates the need for hinges on the frames of the eyewear.
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| Application No. | Application Title | Issue Date |
| 20120126201 | GALLIUM NITRIDE LED DEVICES WITH PITTED LAYERS AND METHODS FOR MAKING THEREOF Light-emitting diode device and method for making thereof. The device includes an n-type layer including a first surface and associated with a first thickness, and a pitted layer on the first surface. The pitted layer includes a second surface and associated with a seco... | 05/24/2012 |
| 20120128014 | INTRA-CAVITY FREQUENCY DOUBLED MICROCHIP LASER OPERATING IN TEM00 TRANSVERSE MODE A method for making a microchip laser includes preparing a laser-cavity chip assembly comprising a gain media, a first substantially flat surface, and a second substantially flat surface parallel to the first substantially flat surface. The method also includes forming ... | 05/24/2012 |
| 20120126252 | PATTERNING THE EMISSION COLOUR IN TOP-EMISSIVE OLEDS The invention relates to a top-emissive organic light-emitting diode (OLED) (10) arranged to emit light having different emission colours, comprising a multi-layered structure provided with a first electrode, a second electrode and a functional layer enabling lig... | 05/24/2012 |
| 20120126219 | ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR PRODUCING THE SAME An organic electroluminescent element including: a first electrode; at least one organic deposition layer; and a second electrode, the first electrode, the organic deposition layer, and the second electrode being formed in this order, wherein the organic deposition laye... | 05/24/2012 |
| 20120126144 | LIGHT EMITTING DEVICE PACKAGE AND METHOD OF FABRICATING THE SAME Provided are a light emitting device package and a method of fabricating the light emitting device package. The light emitting device packages includes a body, a light emitting device disposed in the body, and a wavelength converting partwavelength converting part dispo... | 05/24/2012 |
| 20120129283 | LIGHT EMITTING DEVICE AND METHOD FOR ENHANCING LIGHT EXTRACTION THEREOF A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer a... | 05/24/2012 |
| 20120128019 | MONOLITHICALLY INTEGRATED MULTI-WAVELENGTH HIGH-CONTRAST GRATING VCSEL ARRAY Multiple-wavelength VCSEL array apparatus and method having a high contrast grating (HCG) mirror which can be implemented on a single substrate in which only the dimensions of the HCG (e.g., duty cycle or the period) need be changed to alter the wavelength of a given VC... | 05/24/2012 |
| 20120126273 | OLED SUBSTRATE CONSISTING OF TRANSPARENT CONDUCTIVE OXIDE (TCO) AND ANTI-IRIDESCENT UNDERCOAT A light-emitting devices and methods for forming light-emitting devices are provided. The device comprises of a substrate having a first refractive index, a transparent electrode that is coupled to an organic layer, where the transparent electrode has a second refractiv... | 05/24/2012 |
| 20120126263 | ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD OF MANUFACTURING THE SAME An organic electroluminescence device and a method of manufacturing the same are provided. The organic electroluminescence device is suitable for being configured on a substrate. The organic electroluminescence device includes a first electrode, a first doped carrier tr... | 05/24/2012 |
| 20120107981 | SEMICONDUCTOR LIGHT SOURCES, SYSTEMS, AND METHODS A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes form... | 05/03/2012 |
| 20120104411 | TEXTURED III-V SEMICONDUCTOR A method for fabricating a III-nitride semiconductor film, comprising depositing or growing a III-nitride semiconductor film in a semiconductor light absorbing or light emitting device structure; and growing a textured or structured surface of the III-nitride nitride se... | 05/03/2012 |
| 20120104443 | IIIOxNy ON SINGLE CRYSTAL SOI SUBSTRATE AND III n GROWTH PLATFORM A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crysta... | 05/03/2012 |
| 20120104440 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the ... | 05/03/2012 |
| 20120104410 | Reflector, Manufacture Method Thereof And Light-Emitting Device Including The Reflector A reflector for a GaN-based light-emitting device, method for manufacturing the reflector and GaN-haled light-emitting device including the reflector are provided. The reflector is formed on a p-type GaN-based epitaxial layer and includes: a whisker crystal of un-doped ... | 05/03/2012 |
| 20120107978 | METHOD OF FABRICATING FLEXIBLE DISPLAY DEVICE A method of fabricating a flexible display device includes: forming a plastic substrate on a carrier substrate, the plastic substrate including an active area and a non-active area surrounding the active area; forming an array element on the carrier substrate, the array... | 05/03/2012 |
| 20120107979 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the fi... | 05/03/2012 |
| 20120104412 | HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The textur... | 05/03/2012 |
| 20120107980 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME A liquid crystal display device and a method of fabricating the same is disclosed, to provide a liquid crystal display device to simplify the process and decrease the fabrication cost, the liquid crystal display device includes a first substrate having a color filter an... | 05/03/2012 |
| 20120104423 | ORGANIC LIGHT-EMITTING ELEMENT, ORGANIC LIGHT-EMITTING DEVICE, ORGANIC DISPLAY PANEL, ORGANIC DISPLAY DEVICE, AND METHOD OF MANUFACTURING AN ORGANIC LIGHT-EMITTING ELEMENT An organic light-emitting element includes a reflective anode, a first functional layer, an organic light-emitting layer that emits blue light, a second functional layer, a transparent cathode, and a coating layer. An optical thickness of the first functional layer is g... | 05/03/2012 |
| 20120104407 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer is formed on the substrate, the first n-type GaN layer has a first surface facing away from t... | 05/03/2012 |
| 20120104413 | LIGHT EMITTING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING The light emitting semiconductor device (1) of the present invention is made of nitrides of group III metals and comprises a layer structure comprising an n-type semiconductor layer (2), a p-type semiconductor layer (3), an active region (4) ... | 05/03/2012 |
| 20120104455 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transit... | 05/03/2012 |
| 20120080698 | HIGH EFFICIENCY LIGHT EMITTING DIODES The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface t... | 04/05/2012 |
| 20120080707 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed ... | 04/05/2012 |
| 20120080709 | LIGHT EMITTING DEVICES HAVING ROUGHENED/REFLECTIVE CONTACTS AND METHODS OF FABRICATING SAME Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provide... | 04/05/2012 |
| 20120082178 | Vertical cavity surface emitting laser and method for manufacturing the same A vertical cavity surface emitting laser capable of high-speed modulation and stabilized control of polarization direction of the laser light is provided, including a resonator which is formed by stacking a semiconductor substrate, a lower mirror layer formed on the upp... | 04/05/2012 |
| 20120080695 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer havin... | 04/05/2012 |
| 20120080668 | ORGANIC EL LIGHTING DEVICE AND METHOD OF MANUFACTURING THE SAME An organic EL lighting device includes a first electrode which is formed corresponding to each of the plurality of light-emitting portions on a substrate, an organic functional layer which is formed at least in a light-emitting area, a second electrode which is formed a... | 04/05/2012 |
| 20120068152 | GRAPHENE LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed betwee... | 03/22/2012 |
| 20120070924 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comp... | 03/22/2012 |
| 20120070925 | Method for Producing a Thin-Film Semiconductor Chip Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse sid... | 03/22/2012 |
| 20120070926 | METHOD FOR PRODUCING A LIGHT-EMITTING DIODE A method for producing a light-emitting diode includes providing a light-emitting diode chip including a semiconductor body, and applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electro... | 03/22/2012 |
| 20120068209 | Semiconductor Light Emitting Devices with Optical Coatings and Methods of Making Same A method of making a semiconductor light emitting device having one or more light emitting surfaces includes positioning a stencil on a substrate such that a chip disposed on the substrate is positioned within an opening in the stencil. Phosphor-containing material is d... | 03/22/2012 |
| 20120049218 | SEMICONDUCTOR LIGHT EMITTING COMPONENT AND METHOD FOR MANUFACTURING THE SAME A method for manufacturing a semiconductor light emitting component is disclosed in the present invention. First, a substrate is provided and an epitaxial structure is formed thereon, wherein a first surface of the epitaxial structure contacts the substrate. The epitaxi... | 03/01/2012 |
| 20120049223 | LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arra... | 03/01/2012 |
| 20120049232 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR PRODUCING THE SAME, LAMP, LIGHTING DEVICE, ELECTRONIC EQUIPMENT, MECHANICAL DEVICE AND ELECTRODE Disclosed is a semiconductor light-emitting element including a substrate; a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated on the substrate in this order; one electrode joined ... | 03/01/2012 |
| 20120049179 | GROUP-III NITRIDE-BASED LIGHT EMITTING DEVICE HAVING ENHANCED LIGHT EXTRACTION EFFICIENCY AND MANUFACTURING METHOD THEREOF A method for enhancing light extraction efficiency of a group-III nitride-based light emitting device is disclosed. By roughening a n-type group-III nitride-based cladding layer or an undoped group-III nitride-based layer, a reflecting layer is formed. Because of gaps o... | 03/01/2012 |
| 20120049191 | Organic Light Emitting Display Device and Method of Manufacturing the Same In an organic light emitting display device and a method of manufacturing the same, the organic light emitting display device comprises: an active layer of a thin film transistor, which is formed on a substrate; a gate electrode formed on the active layer and a first in... | 03/01/2012 |
| 20120051378 | Photodetection Embodiments of the present disclosure provide systems, devices, and methods for photodetection. For example, briefly described, in one embodiment among others, a sensor comprises an array of photodetectors, wherein the reflectance of each of the photodectors is a functi... | 03/01/2012 |
| 20120043550 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a semiconductor light emitting device includes a stacked structural body, first and second electrodes, a high resistance layer and a transparent conductive layer. The stacked structural body includes first and second semiconductor layers and... | 02/23/2012 |