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| Application No. | Application Title | Issue Date |
| 20120126312 | VERTICAL DMOS-FIELD EFFECT TRANSISTOR A vertical diffused metal oxide semiconductor (DMOS) field-effect transistors (FET), has a cell structure with a substrate; an epitaxial layer or well of the first conductivity type on the substrate; first and second base regions of the second conductivity type arranged... | 05/24/2012 |
| 20120126314 | VERTICAL DMOS-FIELD EFFECT TRANSISTOR A vertical diffused metal oxide semiconductor (DMOS) field-effect transistors (FET) comprises a substrate of a first conductivity type forming a drain region; an epitaxial layer of the first conductivity type on said substrate; first and second base regions of the secon... | 05/24/2012 |
| 20120129305 | METHOD FOR MANUFACTURING A MOS-FIELD EFFECT TRANSISTOR A method for manufacturing a Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) has the step of implanting a base region of said MOSFET within an epitaxial layer of a semiconductor chip comprising an insulated gate structure used as a masking element, wherein th... | 05/24/2012 |
| 20120126313 | ULTRA THIN DIE TO IMPROVE SERIES RESISTANCE OF A FET A method for producing a power field effect transistor (FET) device having a low series resistance between the drain and source when switched on has the steps of: forming a vertical power FET in a semiconductor die; and back-grinding the semiconductor die to a thickness... | 05/24/2012 |
| 20120068231 | VERTICAL DISCRETE DEVICES WITH TRENCH CONTACTS AND ASSOCIATED METHODS OF MANUFACTURING The present technology is related generally to vertical discrete devices with a trench at the topside of the vertical discrete devices. The trench is filled with a conducting material. In this approach, a drain or cathode of the vertical discrete devices is electrically... | 03/22/2012 |
| 20120052640 | Methods Of Forming Pluralities Of Vertical Transistors, And Methods Of Forming Memory Arrays Some embodiments include methods of forming vertical transistors. A construction may have a plurality of spaced apart fins extending upwardly from a semiconductor substrate. Each of the fins may have vertical transistor pillars, and each of the vertical transistor pilla... | 03/01/2012 |
| 20120049267 | SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME A semiconductor device includes a pipe channel layer formed over a substrate, a first vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a bit line, a second vertical channel layer formed over the pipe channel layer to couple t... | 03/01/2012 |
| 20120049264 | NAND Memory Constructions and Methods of Forming NAND Memory Constructions Some embodiments include NAND memory constructions. The constructions may contain semiconductor material pillars extending upwardly between dielectric regions, with individual pillars having a pair of opposing vertically-extending sides along a cross-section. First cond... | 03/01/2012 |
| 20120032227 | LOW VOLTAGE TUNNEL FIELD-EFFECT TRANSISTOR (TFET) AND METHOD OF MAKING SAME A low voltage tunnel field effect transistor includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction includes a depletion region interfacing together a source-layer and a drain-layer. The depletion region... | 02/09/2012 |
| 20120025307 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include simultaneously forming a first field insulating film and at least one second field insulating film on a front face side of a semiconductor layer. The at l... | 02/02/2012 |
| 20120021574 | METHOD FOR FABRICATING VERTICAL CHANNEL TYPE NONVOLATILE MEMORY DEVICE A method for fabricating a vertical channel type nonvolatile memory device includes: stacking a plurality of interlayer insulating layers and a plurality of gate electrode conductive layers alternately over a substrate; etching the interlayer insulating layers and the g... | 01/26/2012 |
| 20120018856 | Semiconductor Device With Drift Regions and Compensation Regions Disclosed is a method of forming a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type, and a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type.... | 01/26/2012 |
| 20120018799 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME A semiconductor device and a method for manufacturing the same are provided. The method includes forming a cell structure where a storage node contact is coupled to a silicon layer formed over a gate, thereby simplifying the manufacturing process of the device. The semi... | 01/26/2012 |
| 20120018805 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME According to embodiments, a semiconductor device includes a semiconductor substrate and an element isolation insulating film which isolates a element formation region in a surface portion of the semiconductor substrate. A depletion-type channel region of a first conduct... | 01/26/2012 |
| 20120018798 | Method for Protecting a Semiconductor Device Against Degradation, a Semiconductor Device Protected Against Hot Charge Carriers and a Manufacturing Method Therefor A method for protecting a semiconductor device against degradation of its electrical characteristics is provided. The method includes providing a semiconductor device having a first semiconductor region and a charged dielectric layer which form a dielectric-semiconducto... | 01/26/2012 |
| 20120018740 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR A semiconductor device 100 includes: a body region 105 of a first conductivity type placed on a principal surface of a substrate 101; a silicon carbide layer 102 including a drift region 107 of a second conductivity type; a channel lay... | 01/26/2012 |
| 20120012923 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME The present invention relates to a semiconductor device and a method for forming the same. The semiconductor device includes: a vertical pillar protruded from a semiconductor substrate; a first junction region provided at an upper part of the vertical pillar; a second j... | 01/19/2012 |
| 20120012930 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME According to one embodiment, a semiconductor device includes a semiconductor substrate, and first and second transistors. The substrate has a first conductivity type. The first and second transistors are provided on the substrate. The first and second transistors each i... | 01/19/2012 |
| 20120009747 | Methods of Manufacturing Nonvolatile Memory Devices Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates... | 01/12/2012 |
| 20120007169 | SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD The present invention provides a semiconductor device including:a semiconductor substrate of a first conductive type; a first well region of the first conductive type formed in the semiconductor substrate; an epitaxial region of a second conductive type formed in the se... | 01/12/2012 |
| 20120009746 | METHODS OF FORMING A SEMICONDUCTOR DEVICE A semiconductor device and associated methods, the semiconductor device including a semiconductor substrate with a first well region, a first gate electrode disposed on the first well region, and a first N-type capping pattern, a first P-type capping pattern, and a firs... | 01/12/2012 |
| 20120001257 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME A downsized semiconductor device having an excellent reverse characteristic, and a method of manufacturing the semiconductor device is sought to improve. The semiconductor device comprises a semiconductor body having a polygonal contour. An active area is formed in the ... | 01/05/2012 |
| 20110318893 | METHODS FOR FORMING SEMICONDUCTOR DEVICE STRUCTURES The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.... | 12/29/2011 |
| 20110315960 | TUNNEL FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING SAME A TFET includes a source region (110, 210), a drain region (120, 220), a channel region (130, 230) between the source region and the drain region, and a gate region (140, 240) adjacent to the channel region. The source region contains a first... | 12/29/2011 |
| 20110312137 | Vertical Power MOSFET and IGBT Fabrication Process with Two Fewer Photomasks A process for fabrication of a power semiconductor device is disclosed in which a single photomask is used to define each of p-conductivity well regions and n-conductivity type source regions. In the process a single photomask is deposited on a layer of polysilicon on a... | 12/22/2011 |
| 20110303973 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned v... | 12/15/2011 |
| 20110303976 | HIGH VOLTAGE CHANNEL DIODE A channel diode structure having a drift region and method of forming. A charge balanced channel diode structure having an electrode shield and method of forming.... | 12/15/2011 |
| 20110303972 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME A semiconductor device manufacturing method of an embodiment includes the steps of: forming a first insulating layer on a semiconductor substrate; forming on the first insulating layer an amorphous or polycrystalline semiconductor layer having a narrow portion; forming ... | 12/15/2011 |
| 20110298027 | SEMICONDUCTOR DEVICE It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided o... | 12/08/2011 |
| 20110300679 | PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN A process of forming an electronic device can include providing a workpiece comprising a substrate, including an underlying doped region, and a semiconductor portion overlying the underlying doped region, wherein the semiconductor portion has a primary surface spaced ap... | 12/08/2011 |
| 20110291182 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes vertical pillars formed by etching a semiconductor substrate and junction regions which are located among the neighboring vertical pillars and spaced apart from one... | 12/01/2011 |
| 20110294272 | SEMICONDUCTOR DEVICE PRODUCTION METHOD This semiconductor device includes a first device and a second device provided on a semiconductor substrate and having different breakdown voltages. More specifically, the semiconductor device includes a semiconductor substrate, a first region defined on the semiconduct... | 12/01/2011 |
| 20110291178 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a semiconductor device includes a substrate, a lower gate layer, a stacked body, a dummy electrode layer, an insulating film, and a channel body. The lower gate layer is provided above the substrate. The stacked body includes a plurality of ... | 12/01/2011 |
| 20110291177 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surroundi... | 12/01/2011 |
| 20110291181 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a semiconductor device including a cell region and a terminal region includes a first semiconductor region of a first conductivity type, semiconductor pillars of the first and a second conductivity type, a second semiconductor region of the ... | 12/01/2011 |
| 20110284948 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME A semiconductor device and a fabrication method for the semiconductor device are provided in which an increase of a forward loss is suppressed and a reverse recovery loss is reduced. A semiconductor device may include a semiconductor substr... | 11/24/2011 |
| 20110284949 | VERTICAL TRANSISTOR AND A METHOD OF FABRICATING THE SAME A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer formed on the first electrode, with a portion of the first electrode expo... | 11/24/2011 |
| 20110281411 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE An amorphous silicon layer and a single crystal silicon layer are formed in an upper portion of a silicon pillar. Then, by performing the selective epitaxial growth method twice, an amorphous silicon layer and an amorphous silicon germanium layer are formed in this orde... | 11/17/2011 |
| 20110263088 | POLY-SI THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY HAVING THE SAME A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate support... | 10/27/2011 |
| 20110241104 | INTEGRATED CIRCUIT DEVICE AND METHOD FOR ITS PRODUCTION An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift... | 10/06/2011 |
