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| Application No. | Application Title | Issue Date |
| 20120129280 | Method of Manufacturing Light Emitting Device A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode ... | 05/24/2012 |
| 20120104429 | ORGANIC EL ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ORGANIC EL DISPLAY DEVICE An organic EL element includes a substrate 20, a lower electrode 21, an upper electrode 26, and an organic layer 22. The organic layer 22 is provided between the upper and lower electrodes 21, 26. The upper and lower electrodes ... | 05/03/2012 |
| 20120104451 | ORGANIC LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME An organic light emitting device and a method for manufacturing the same are provided. The organic light emitting device comprises: a substrate; a first electrode disposed on the substrate; a hole function layer disposed on the first electrode; a first emission layer di... | 05/03/2012 |
| 20120106582 | HEAT SINK FOR A PULSED HIGH-POWER LASER DIODE A semiconductor laser module having a substrate and having at least one semiconductor laser situated on the substrate, the substrate having a layer structure which includes at least one primary layer which establishes a thermal contact with the semiconductor laser. The ... | 05/03/2012 |
| 20120107972 | LASER DIODE AND METHOD OF MANUFACTURING THE SAME A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includ... | 05/03/2012 |
| 20120068151 | Light emitting and lasing semiconductor methods and devices The invention is applicable for use in conjunction with a light-emitting semiconductor structure that includes a semiconductor active region of a first conductivity type containing a quantum size region and having a first surface adjacent a semiconductor input region of... | 03/22/2012 |
| 20120070919 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, AND METHOD OF MANUFACTURING BASE MATERIAL It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protecti... | 03/22/2012 |
| 20120049211 | METHOD FOR MANUFACTCURING LIGHT-EMITTER, ORGANIC DISPLAY PANEL USING LIGHT-EMITTER, ORGANIC LIGHT-EMITTING DEVICE AND ORGANIC DISPLAY DEVICE A resin material layer including photosensitive resin material is formed on an interlayer on an underlayer. By partially exposing and developing the resin material layer using developer in which the resin material layer and the interlayer are soluble, an uncured portion... | 03/01/2012 |
| 20120049154 | SOLID STATE LIGHTING DEVICES WITH POINT CONTACTS AND ASSOCIATED METHODS OF MANUFACTURING Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconduc... | 03/01/2012 |
| 20120049223 | LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arra... | 03/01/2012 |
| 20120049756 | SOLID STATE LIGHTING DEVICES WITH IMPROVED CONTACTS AND ASSOCIATED METHODS OF MANUFACTURING Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart f... | 03/01/2012 |
| 20120043527 | LIGHT EMITTING DEVICE According to embodiments of the present invention, a light emitting device is provided. The light emitting device includes: an active region comprising at least one p-i-n junction, the at least one p-i-n junction comprising a p-doped region, an intrinsic region and an n... | 02/23/2012 |
| 20120037952 | LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF A light emitting diode and a fabricating method thereof are provided. A first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first surface are sequentially formed a substrate. Next, the first surface is treated during a sur... | 02/16/2012 |
| 20120034714 | WAFER-LEVEL LIGHT EMITTING DIODE STRUCTURE, LIGHT EMITTING DIODE CHIP, AND METHOD FOR FORMING THE SAME A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subje... | 02/09/2012 |
| 20120032221 | ORGANIC LIGHT EMITTING DIODE AND METHOD FOR PRODUCING AN ORGANIC LIGHT EMITTING DIODE An organic light-emitting diode includes an organic light-emitting layer located between a transparent electrode and one other electrode on a substrate. In some embodiments at least one of the transparent electrode and the other electrode has two layers. The two layers ... | 02/09/2012 |
| 20120025259 | ELECTRO-OPTIC DEVICE AND METHOD FOR MANUFACTURING THE SAME An electro-optic device (501) is provided comprising
| |
| 20120018767 | Light-Emitting Device, Lighting Device, and Manufacturing Method of Light-Emitting Device The manufacturing method of the light-emitting device is provided in which an auxiliary electrode in contact with an electrode formed using a transparent conductive film of a light-emitting element is formed using a mask, and direct contact between the auxiliary electro... | 01/26/2012 |
| 20120018765 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF PRODUCING THE SAME A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emittin... | 01/26/2012 |
| 20120007042 | LIGHT EMITTING DEVICE WITH A SINGLE QUANTUM WELL ROD A light emitting device comprising a first semiconductor layer, a second semiconductor layer and a quantum well layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on the opposite sides of the quantum well layer, the quantum well... | 01/12/2012 |
| 20120007047 | SEMICONDUCTOR LIGHT-EMITTING DEVICE A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, a... | 01/12/2012 |
| 20120007101 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconduct... | 01/12/2012 |
| 20120009696 | LIGHT-EMITTING ELEMENT CAPABLE OF INCREASING AMOUNT OF LIGHT EMITTED, LIGHT-EMITTING DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE A light-emitting element capable of increasing the amount of light emitted, a light-emitting device including the same, and a method of manufacturing the light-emitting element and the light-emitting device include a buffer layer having an uneven pattern formed thereon;... | 01/12/2012 |
| 20120001218 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME Provided are a light emitting device and a method of fabricating the same. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor l... | 01/05/2012 |
| 20120003767 | OPTICAL MODULATOR AND METHOD FOR MANUFACTURING SAME An optical modulator according to the present invention is configured at least by a semiconductor layer subjected to a doping process so as to exhibit a first conductivity type, and a semiconductor layer subjected to a doping process so as to exhibit a second conductivi... | 01/05/2012 |
| 20110315966 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF An organic electroluminescent display device (10) includes: a substrate (11); a first electrode (14) which is provided on the substrate (11), and in which at least a surface portion located on an opposite side from the substrate (11) i... | 12/29/2011 |
| 20110318855 | METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passiva... | 12/29/2011 |
| 20110309402 | PIXEL STRUCTURE AND METHOD OF MAKING THE SAME A pixel structure includes a substrate, a gate line and a gate electrode disposed on the substrate, an insulating layer covering the substrate, a semiconductor layer disposed on the insulating layer, a data line, a source electrode, and a drain electrode which are dispo... | 12/22/2011 |
| 20110312106 | METHOD FOR PREPARING A LIGHT-EMITTING DEVICE USING GAS CLUSTER ION BEAM PROCESSING A method of manufacturing semiconductor-based light-emitting devices, such as light-emitting diodes (LEDs), is described. The method comprises irradiating an interface region with a gas cluster ion beam (GCIB) to improve the interface region between a light-emitting dev... | 12/22/2011 |
| 20110305022 | WIRE-PIERCING LIGHT-EMITTING DIODE LIGHT STRINGS A wire-piercing light-emitting diode (LED) a lead frame having a first lead and a second lead. The first lead has a first transition portion and a first bottom portion with a first cutting member, and the second lead having a second transition portion and a second botto... | 12/15/2011 |
| 20110303937 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF A light emitting diode includes a heat conductive substrate and a light emitting structure formed on the substrate. A transparent conductive layer is formed on the light emitting structure and an electrode pad is deposited on the transparent conductive layer. The light ... | 12/15/2011 |
| 20110297995 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED BY THE SAME In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a l... | 12/08/2011 |
| 20110297949 | Organic light emitting display and method of fabricating the same An organic light emitting display and method of fabricating thereof, the display including a substrate including a first thin film transistor region and a second thin film transistor region; a buffer layer on the substrate; a first and a second semiconductor layer on th... | 12/08/2011 |
| 20110298001 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED BY THE SAME In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a l... | 12/08/2011 |
| 20110297965 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME According to one embodiment, a light-emitting device includes a semiconductor layer, first and second electrode portions, a first insulating film, and a metal layer. The semiconductor layer includes a first main surface, a second main surface on an opposite side to the ... | 12/08/2011 |
| 20110291069 | Light-emitting devices and methods of manufacturing the same Light-emitting devices (LED) and methods of manufacturing the same. A LED includes a first type semiconductor layer, a nano array layer that includes a plurality of nano structures each including a first type semiconductor nano core selectively grown from the first type... | 12/01/2011 |
| 20110284908 | SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconduc... | 11/24/2011 |
| 20110284819 | QUANTUM DOT LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a metho... | 11/24/2011 |
| 20110284909 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a film co... | 11/24/2011 |
| 20110287566 | METHOD FOR FABRICATING AN ELECTROLUMINESCENCE DEVICE A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole tr... | 11/24/2011 |
| 20110278641 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice stru... | 11/17/2011 |
