Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Application No. | Application Title | Issue Date |
| 20120007092 | Method for Manufacturing Thin Film Transistor, and Thin Film Transistor Disclosed is a method for manufacturing a thin film transistor in which a semiconductor film in a channel portion is provided between a source electrode and a drain electrode, wherein a partition layer (a bank) can be appropriately formed. The method comprises the steps... | 01/12/2012 |
| 20110284930 | ASYMMETRIC SILICON-ON-INSULATOR (SOI) JUNCTION FIELD EFFECT TRANSISTOR (JFET), A METHOD OF FORMING THE ASYMMETRICAL SOI JFET, AND A DESIGN STRUCTURE FOR THE ASYMMETRICAL SOI JFET An asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method. The JFET includes a bottom gate on an insulator layer, a channel region on the bottom gate and, on the channel region, source/drain regions and a top gate between the source/d... | 11/24/2011 |
| 20110263104 | THIN BODY SEMICONDUCTOR DEVICES A method for fabricating an FET device is disclosed. The method includes providing a body over an insulator, with the body having at least one surface adapted to host a device channel. Selecting the body to be Si, Ge, or their alloy mixtures. Choosing the body layer to ... | 10/27/2011 |
| 20110263079 | INTERFACE PROTECTION LAYAER USED IN A THIN FILM TRANSISTOR STRUCTURE Embodiments of the disclosure generally provide methods of using an interface protection layer disposed between an active layer and a source-drain metal electrode layer. In one embodiment, a method for forming an interface protection layer in a thin film transistor incl... | 10/27/2011 |
| 20110220906 | PIXEL STRUCTURE AND FABRICATION METHOD THEREOF The present invention discloses pixel structures and fabrication methods thereof. The pixel includes a thin film transistor forming at a thin film transistor region and a storage capacitor forming at a pixel electrode region. The method includes: forming a gate conducti... | 09/15/2011 |
| 20110169001 | DISPLAY DEVICE, SWITCHING CIRCUIT AND FIELD EFFECT TRANSISTOR A this film transistor is provided. The thin film transistor includes a semiconductor layer including a source region, a drain region, and a channel region, wherein the channel region is provided between the source region and the drain region; and a gate electrode overl... | 07/14/2011 |
| 20110073842 | NANO-WIRE FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE TRANSISTOR, AND INTEGRATED CIRCUIT INCLUDING THE TRANSISTOR Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing an SOI substrate having a (100) surface orientation, and nano-wire field effect transistor where two triangular columnar members configuring the nano-wires and being m... | 03/31/2011 |
| 20110049594 | SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION A method of forming a SOI substrate, diodes in the SOI substrate and electronic devices in the SOI substrate and an electronic device formed using the SOI substrate. The method of forming the SOI substrate includes forming an oxide layer on a silicon first substrate; io... | 03/03/2011 |
| 20110053322 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a... | 03/03/2011 |
| 20110039377 | Semiconductor on Insulator A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on a semiconductor substrate, and a lattice-matched semiconductor layer is f... | 02/17/2011 |
| 20110027946 | Horizontal Coffee-Stain Method Using Control Structure To Pattern Self-Organized Line Structures A modified coffee-stain method for producing self-organized line structures and other very fine features that involves disposing a solution puddle on a target substrate, and then controlling the peripheral boundary shape of the puddle using a control structure that cont... | 02/03/2011 |
| 20110027947 | PRINTING METHOD FOR HIGH PERFORMANCE ELECTRONIC DEVICES A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by patt... | 02/03/2011 |
| 20110020990 | THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundar... | 01/27/2011 |
| 20110012669 | SEMICONDUCTOR-ON-INSULATOR WITH BACK SIDE CONNECTION Embodiments of the present invention provide for the removal of excess carriers from the body of active devices in semiconductor-on-insulator (SOI) structures. In one embodiment, a method of fabricating an integrated circuit is disclosed. In one step, an active device i... | 01/20/2011 |
| 20110012115 | DISPLAY DEVICE WITH IMPROVED SENSING MECHANISM A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on t... | 01/20/2011 |
| 20110012090 | SILICON-GERMANIUM NANOWIRE STRUCTURE AND A METHOD OF FORMING THE SAME A silicon-germanium nanowire structure arranged on a support substrate is disclosed, The silicon-germanium nanowire structure includes at least one germanium-containing supporting portion arranged on the support substrate, at least one germanium-containing nanowire disp... | 01/20/2011 |
| 20100327260 | Single Electron Transistor Operating at Room Temperature and Manufacturing Method for Same The present invention relates to a single electron transistor operating at room temperature and a manufacturing method for same. More particularly, the present invention relates to a single electron transistor operating at room temperature, in which a quantum dot or a s... | 12/30/2010 |
| 20100320468 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME In a portion of a gate signal line and a portion of a common signal line, cutouts which are arranged perpendicular to the extending direction of these lines and open to face each other in an opposed manner are formed. A cruciform shape in appearance is formed by combini... | 12/23/2010 |
| 20100317160 | HORIZONTAL COFFEE-STAIN METHOD USING CONTROL STRUCTURE TO PATTERN SELF-ORGANIZED LINE STRUCTURES A modified coffee-stain method for producing self-organized line structures and other very fine features that involves disposing a solution puddle on a target substrate, and then controlling the peripheral boundary shape of the puddle using a control structure that cont... | 12/16/2010 |
| 20100317159 | Vertical Coffee-Stain Method For Forming Self-Organized Line Structures A “vertical” coffee-stain method for producing self-organized line structures and other very fine features that involves disposing a target structure in a solution made up of a fine particle solute dispersed in a liquid solvent such that a “waterline” is formed ... | 12/16/2010 |
| 20100311212 | METHOD FOR PRODUCING DISPLAY DEVICE In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface th... | 12/09/2010 |
| 20100295127 | METHOD OF FORMING A PLANAR FIELD EFFECT TRANSISTOR WITH EMBEDDED AND FACETED SOURCE/DRAIN STRESSORS ON A SILICON-ON-INSULATOR (SOI) WAFER, A PLANAR FIELD EFFECT TRANSISTOR STRUCTURE AND A DESIGN STRUCTURE FOR THE PLANAR FIELD EFFECT TRANSISTOR Disclosed are embodiments of a method of forming, on an SOI wafer, a planar FET with embedded and faceted source/drain stressors. The method incorporates a directional ion implant process to create amorphous regions at the bottom surfaces of source/drain recesses in a s... | 11/25/2010 |
| 20100283059 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME A semiconductor device includes: an insulating substrate; a stepwise layer arranged on the insulating substrate and having an end portion whose inclination angle is equal to or greater than 60°; an insulating layer formed on the insulating substrate and the stepwise la... | 11/11/2010 |
| 20100276669 | ELECTRIC NANODEVICE AND METHOD OF MANUFACTURING SAME A nanodevice is disclosed. The nanodevice comprises: a drain region, a source region opposite to the drain region and being separated therefrom at least with a trench, and a gate region, isolated from the drain and the source regions and from the trench. The trench has ... | 11/04/2010 |
| 20100264418 | CONTROL SUBSTRATE AND CONTROL SUBSTRATE MANUFACTURING METHOD A control substrate comprising:
| 10/21/2010 |
| 20100248421 | Method of forming organic thin film and method of manufacturing semiconductor device using the same Provided are a method of forming an organic semiconductor thin film and a method of manufacturing a semiconductor device using the. According to example embodiments, a method of forming an organic semiconductor thin film at least may include exposing a lower substrate c... | 09/30/2010 |
| 20100213517 | HIGH VOLTAGE SEMICONDUCTOR DEVICE This invention describes implementation of medium/high voltage semiconductor devices with a better voltage-blocking capability versus specific on-resistanσe trade off. This approach can be implemented in baseline and submicron CMOS without any additional process steps.... | 08/26/2010 |
| 20100210052 | THIN FILM TRANSISTOR PANEL, LIQUID CRYSTAL DISPLAY HAVING THE SAME AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR PANEL A thin film transistor panel, a liquid crystal display having the same, and a method of manufacturing the thin film transistor panel are provided. The thin film transistor includes a gate line formed on an insulating substrate in a predetermined direction, a data line c... | 08/19/2010 |
| 20100197083 | FABRICATION METHODS OF THIN FILM TRANSISTOR SUBSTRATES Methods for manufacturing thin film transistor arrays utilizing three steps of lithography and one step of laser ablation while the lithography procedure is used four to five times in conventional processes are disclosed. The use of the disclosed methods assists in impr... | 08/05/2010 |
| 20100181574 | THIN FILM TRANSISTOR DEVICES WITH DIFFERENT ELECTRICAL CHARACTERISTICS AND METHOD FOR FABRICATING THE SAME A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second region of a substrate. A first polysilicon active layer is disposed in the first region and between the substr... | 07/22/2010 |
| 20100171154 | Silicon-On-Insulator Junction Field-Effect Transistor Having A Fully Depleted Body and Fabrication Method Therefor Silicon-on-insulator JFET (SOI JFET) having a fully depleted body and fabrication methods therefor. SOI JFETs offer leakage advantages over bulk silicon JFETs. However, some SOI JFETs have poor switching characteristics (e.g., high switch on time). The devices and techn... | 07/08/2010 |
| 20100171155 | Body-biased Silicon-On-Insulator Junction Field-Effect Transistor Having A Fully Depleted Body and Fabrication Method Therefor Silicon-on-insulator JFET having a body bias and a fully depleted body and fabrication methods therefore are disclosed. SOI JFETs offer leakage advantages over bulk silicon JFETs. However, some SOI JFETs have poor switching characteristics (e.g., high switch on time), a... | 07/08/2010 |
| 20100171546 | Polycrystalline silicon thin film transistors with bridged-grain structures A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A ... | 07/08/2010 |
| 20100163856 | METHOD OF FABRICATING POLYSILICON, THIN FILM TRANSISTOR, METHOD OF FABRICATING THE THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semic... | 07/01/2010 |
| 20100163880 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME A thin film transistor array panel comprises a repair line disposed in a peripheral area of a display area and being configured to repair when at least one of a gate line and a data line are disconnected, and a detour line disposed in the peripheral area and comprising ... | 07/01/2010 |
| 20100163882 | THIN FILM TRANSISTOR ARRAY SUBSTRATE FOR AN X-RAY DETECTOR AND METHOD OF FABRICATING THE SAME A thin film transistor (TFT) array substrate for an X-ray detector and a method of fabricating the same are provided. The TFT array substrate includes a substrate, a gate line formed on the substrate, a data line crossing the gate line, a thin film transistor including ... | 07/01/2010 |
| 20100151633 | PROCESSES FOR FORMING CHANNELS IN THIN-FILM TRANSISTORS Methods for consistently reproducing channels of small length are disclosed. An ink composition comprising silver nanoparticles and a surface modification agent is used. The surface modification agent may also act as a stabilizer for the nanoparticles. A first line is p... | 06/17/2010 |
| 20100151634 | Display Device At least two TFTs which are connected with a light emitting element are provided, crystallinities of semiconductor regions composing active layers of the respective TFTs are made different from each other. As the semiconductor region, a region obtained by crystallizing ... | 06/17/2010 |
| 20100129965 | METAL SUBSTRATE HAVING ELECTRONIC DEVICES FORMED THEREON A method of forming an electronic device on a metal substrate deposits a first seed layer of a first metal on at least one master surface with a roughness less than 400 nm. A supporting metal layer is bonded to the first seed layer to form the metal substrate 10.... | 05/27/2010 |
| 20100112762 | METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES Methods of fabricating a semiconductor structure with a non- epitaxial thin film disposed on a surface of a substrate of the semiconductor structure are disclosed. The methods provide selective non-epitaxial growth (SNEG) or deposition of amorphous and/or polycrystallin... | 05/06/2010 |
