Celebrity Inventors
Mark Twain (Samuel L. Clemens) received Patent No. 121,992 for "An Improvement in Adjustable and Detachable Straps for Garments." He later received two more patents: one for a self-pasting scrapbook and one for a game to help players remember important historical dates.
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| Application No. | Application Title | Issue Date |
| 20110189613 | Exposure apparatus, exposure method, and device fabrication method An exposure apparatus forms an immersion area by supplying a liquid onto a part of a substrate, and forms a prescribed pattern on the substrate through the liquid. A spare immersion area, which is capable of holding part of the liquid on the substrate, is formed at the ... | 08/04/2011 |
| 20110091821 | RESIST TREATMENT UNIT, RESIST COATING AND DEVELOPING APPARATUS, AND RESIST TREATMENT METHOD A resist treatment unit for performing treatment on a resist film which has been formed on a substrate is disclosed. This resist treatment unit includes: a treatment container capable of maintaining a vacuum therein; a mounting table provided in the treatment container ... | 04/21/2011 |
| 20090258322 | METHODS FOR PLANARIZING UNEVENNESS ON SURFACE OF WAFER PHOTORESIST LAYER AND WAFERS PRODUCED BY THE METHODS A wafer has a substrate and a photoresist layer thereon with a surface that is planarized by positioning over a starting surface of the photoresist layer a gray-scale mask having a pattern that correlates with a gradient height profile of unevenness present on the start... | 10/15/2009 |
| 20090130592 | Compositions and processes for immersion lithography New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photores... | 05/21/2009 |
| 20090130612 | PATTERNING PROCESS The invention is directed to a method for patterning a material layer. The method comprises steps of forming a first mask layer on the material layer and then patterning the first mask layer. The patterned first mask layer has a pattern therein and a plurality of gaps w... | 05/21/2009 |
| 20090117360 | SELF-ASSEMBLED MATERIAL PATTERN TRANSFER CONTRAST ENHANCEMENT A non-photosensitive polymeric resist containing at least two immiscible polymeric block components is deposited on the planar surface. The non-photosensitive polymeric resist is annealed to allow phase separation of immiscible components and developed to remove at leas... | 05/07/2009 |
| 20090104571 | Method for air gap formation using UV-decomposable materials A method of selectively removing a sacrificial material on a substrate is described. The method comprises forming a sacrificial layer on a substrate. Thereafter, the sacrificial layer is selectively decomposed at a temperature less than the temperature required to therm... | 04/23/2009 |
| 20090104559 | Bottom Antireflective Coating Compositions Developable bottom antireflective coating compositions are provided.... | 04/23/2009 |
| 20090098490 | Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing The present invention is directed to novel radiation-sensitive, wet developable bottom antireflective coating (DBARC) compositions and their use in semiconductor device manufacturing. The DBARC compositions contain a photoacid generator that produces a photoacid upon ex... | 04/16/2009 |
| 20090081591 | METHOD FOR PATTERNING A PHOTOSENSITIVE LAYER The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosen... | 03/26/2009 |
| 20090081598 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm−1 at 193 nm and a relatively high refractive index are provided. The functionalized polycarbosilanes contain at least one pendant group that is acid labile or aqueous ... | 03/26/2009 |
| 20090081589 | THICK FILM RESISTS Thick film photoresist compositions are disclosed.... | 03/26/2009 |
| 20090075217 | TAPERED EDGE BEAD REMOVAL PROCESS FOR IMMERSION LITHOGRAPHY A method and apparatus for forming a tapered photoresist edge. The method includes: forming a photoresist layer on a substrate; exposing a first annular region of the photoresist layer adjacent to a perimeter of the substrate to actinic radiation, the first annular regi... | 03/19/2009 |
| 20090053652 | PHOTORESIST COMPOSITIONS Photoresist compositions are disclosed.... | 02/26/2009 |
| 20090042133 | Antireflective Coating Composition An antireflective coating composition which forms films with high n values is described.... | 02/12/2009 |
| 20090042148 | Photoresist Composition for Deep UV and Process Thereof The present invention refers to a photoresist composition comprising (i) a polymer A comprising at least one acid labile group; (ii) at least one photoacid generator; (iii) at least one base; (iv) a polymer B, where polymer B is non-miscible with polymer A and soluble i... | 02/12/2009 |
| 20090035668 | Method and materials for patterning a neutral surface A self assembly step for the manufacture of an electronic component comprising, e.g., a semiconductor chip or semiconductor array or wafer comprises forming a diblock copolymer film placed on a random copolymer film substrate operatively associated with the electronic c... | 02/05/2009 |
| 20090035708 | LAYER PATTERNING USING DOUBLE EXPOSURE PROCESSES IN A SINGLE PHOTORESIST LAYER A structure and a method for forming the same. The method includes providing a structure which includes (a) a to-be-patterned layer, (b) a photoresist layer on top of the to-be-patterned layer wherein the photoresist layer includes a first opening, and (c) a cap region ... | 02/05/2009 |
| 20090035665 | PROCESS OF SEMICONDUCTOR FABRICATION WITH MASK OVERLAY ON PITCH MULTIPLIED FEATURES AND ASSOCIATED STRUCTURES Spacers are formed by pitch multiplication and a layer of negative photoresist is deposited on and over the spacers to form additional mask features. The deposited negative photoresist layer is patterned, thereby removing photoresist from between the spacers in some are... | 02/05/2009 |
| 20090035701 | Photoresist and pattern-forming process using the same A photolithography process using a photoresist is as following. A substrate is provided for coating a photoresist thereon to form a photoresist layer and the photoresist is formed by mixing photocatalyst particles and polymer binder in a solvent. The photoresist layer i... | 02/05/2009 |
| 20090029298 | METHOD OF MANUFACTURING PATTERNED MAGNETIC RECORDING MEDIUM Provided is a method of manufacturing a patterned magnetic recording medium. The method includes (a) forming a patterned recording layer on an underlayer of a first substrate; (b) coating a polymer layer on a surface of a second substrate; (c) transferring the polymer l... | 01/29/2009 |
| 20090023078 | Lithography Masks and Methods of Manufacture Thereof Lithography masks and methods of manufacture thereof are disclosed. For example, a method of manufacturing a lithography mask includes forming a stack over a substrate. The stack includes bottom attenuated phase shift material layers, intermediate opaque material layers... | 01/22/2009 |
| 20090004610 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE A method and apparatus for manufacturing a semiconductor device is disclosed. In particular, the application discloses a method that performs a lithography process using a material capable of increasing a depth of focus so as to prevent efficiency of the lithography pro... | 01/01/2009 |
| 20080311530 | GRADED TOPCOAT MATERIALS FOR IMMERSION LITHOGRAPHY A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the top... | 12/18/2008 |
| 20080299487 | LITHOGRAPHY MATERIAL AND LITHOGRAPHY PROCESS An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The... | 12/04/2008 |
| 20080213706 | Method and apparatus for thermal development having a removable support member This invention pertains to a method and apparatus for thermally developing a photosensitive element, and particularly to a method and apparatus for supporting the photosensitive element with a removable flexible support member during thermal treatment.... | 09/04/2008 |
| 20080192253 | METHOD AND TEST-STRUCTURE FOR DETERMINING AN OFFSET BETWEEN LITHOGRAPHIC MASKS A method and a test-structure for determining an offset between lithographic masks are described. In one embodiment, an image of a first mask is provided in a patterning layer on a substrate. The image of the first mask comprises a first set of lines, each line separate... | 08/14/2008 |
| 20080187867 | PHOTOSENSITIVE POLYIMIDE COMPOSITION, POLYIMIDE FILM AND SEMICONDUCTOR DEVICE USING THE SAME A photosensitive polyimide composition, a polyimide film, and a semiconductor device using the same are disclosed. The photosensitive polyimide composition can be cured by heating. A polyhydroxyimide is used as a base resin and can be mixed with a photoacid generator an... | 08/07/2008 |
| 20080176173 | Method for producing light-transmitting electromagnetic wave-shielding film, light-transmitting electromagnetic wave-shielding film and plasma display panel using the shielding film A silver salt-containing layer containing a silver salt and provided on a support is exposed and developed to form a metal silver portion and a light-transmitting portion, and then the metal silver portion is further subjected to physical development and/or plating to f... | 07/24/2008 |
| 20080166638 | Photoresist Composition And Method For Forming Pattern Of A Semiconductor Device A photoresist composition includes a base resin, a copolymer of acrylic acid or methacrylic acid and 3,3-dimethoxypropene, a photoacid generator, an organic base, and an organic solvent, and is used for forming a fine (micro) pattern in a semiconductor device by double ... | 07/10/2008 |
| 20080129970 | Immersion Exposure System, and Recycle Method and Supply Method of Liquid for Immersion Exposure An immersion exposure system 1 performs an exposure process through a liquid 301 provided between an optical element of a projection optical means 121 and a substrate 111. The immersion exposure system 1 includes a liquid supply sectio... | 06/05/2008 |
| 20080124652 | Positive resist composition and patterning process A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyc... | 05/29/2008 |
| 20080118875 | Hardmask composition and associated methods A hardmask composition includes a solvent and an organosilicon copolymer. The organosilicon copolymer may be represented by Formula A:
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| 20080118861 | FILM FORMING METHOD, FILM FORMING APPARATUS AND PATTERN FORMING METHOD Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure. The film forming method includes the steps of forming surface films including a resist film... | 05/22/2008 |
| 20080118863 | Positive resist compositions and patterning process A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. When processed by ArF lithography, the com... | 05/22/2008 |
| 20080118874 | Use of Methanofullerne Derivatives as Resist Materials and Method for Forming a Resist Layer The use as a resist material of a methanofullerene derivative having a plurality of open-ended addends, and to a method for forming a patterned resist layer on a substrate using the methanofullerene derivatives. The methanofullerene derivatives can be represented by the... | 05/22/2008 |
| 20080102402 | MONOMER HAVING SULFONYL GROUP, POLYMER THEREOF AND PHOTORESIST COMPOSITION INCLUDING THE SAME A photoresist monomer having a sulfonyl group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula.
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| 20080090173 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS A resist composition comprising an alkali-soluble polymer having lactone units incorporated therein as an additive forms a resist film which has on its surface a reduced contact angle after development and prevents water penetration during immersion lithography. ... | 04/17/2008 |
| 20080090184 | Positive -Working Photoimageable Bottom Antireflective Coating The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurrin... | 04/17/2008 |
| 20080090171 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN Provided are a positive resist composition for immersion lithography, and a method for forming a resist pattern using the same, wherein the positive resist composition comprises a resin component (A) that increases its alkali solubility under action of an acid, an acid... | 04/17/2008 |
