|Application No.||Application Title||Issue Date|
|20140051026||PATTERNING PROCESS AND RESIST COMPOSITION|
A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a tertiary ester type acid labile group having a plurality of methyl or ethyl groups on alicycle and an acid generator onto a substrate, prebaking, exposi...
|20140045123||MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS|
A polymer comprising recurring units derived from a (meth)acrylate monomer of tertiary ester type having branched alkyl on alicycle is used to form a resist composition. When subjected to exposure, PEB and organic solvent development, the resist composition is improved ...
|20140038107||Method and System for E-Beam Lithography with Multi-Exposure|
The present disclosure provides a method for electron-beam (e-beam) lithography patterning. The method includes forming a resist layer on a substrate; performing a first e-beam exposure process to the resist layer according to a first pattern; performing a second e-beam...
|20140030656||METHOD FOR FORMING RESIST PATTERNS AND METHOD FOR PRODUCING PATTERNED SUBSTRATES|
A method for forming a resist pattern that includes a layout having a minimum line width of 100 nm or less forms a resist film on a substrate, draws a lithography pattern on the resist film with a variable shape electron beam, and executes puddle development on the resi...
|20140030657||MANUFACTURING METHOD OF PHOTOMASK, METHOD FOR OPTICAL PROXIMITY CORRECTION, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE|
A manufacturing method of a photomask by which a resist pattern corresponding to a pattern with designed values can be formed, a method for optical proximity correction, and a manufacturing method of a semiconductor device are provided. Proximity design features that ar...
|20140030643||ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION|
Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) containing an acid-decomposable repeating unit (A), which resin when acted on by an acid, increases its solubility in an alkali developer, a compound (Q) that when exposed to acti...
|20140023972||Data Process for E-Beam Lithography|
The present disclosure provides a dithering method of increasing wafer throughput by an electron beam lithography system. The dithering method generates an edge map from a vertex map. The vertex map is generated from an integrated circuit design layout (such as an origi...
|20140017613||HOLDING APPARATUS, PROCESSING APPARATUS, LITHOGRAPHY APPARATUS, AND METHOD FOR MANUFACTURING ARTICLE|
A holding apparatus includes a base provided with a protrusion for supporting a substrate, and holds the substrate via liquid with which a gap between the substrate supported by the protrusion and the base is filled. The holding apparatus includes a heat storage member ...
|20140011136||PATTERNING PROCESS AND RESIST COMPOSITION|
A negative pattern is formed by coating a resist composition comprising a branched polymer having chains extending in at least three directions and an optional acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an or...
|20140004464||POLYMER COMPOSITION, PHOTORESIST COMPRISING THE POLYMER COMPOSITION, AND COATED ARTICLE COMPRISING THE PHOTORESIST|
A copolymer comprises the polymerized product of a dissolution-rate controlling monomer having the formula (I), an acyclic vinyl ether monomer of the formula (II), and a cyclic vinyl ether monomer of the formula (III):
|20140004465||RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME|
A resist underlayer film forming composition for lithography, includes: a polymer including a structure of formula (1) below at a terminal of a polymer chain; a cross-linking agent; a compound that promotes a cross-linking reaction; and an organic solvent:
|20130344441||ORGANIC SOLVENT DEVELOPABLE PHOTORESIST COMPOSITION|
Provided is a hydrophobic negative tone developable (NTD) resist composition comprising (a) a hydrophobic polymer having (i) at least one nonpolar acid-stable group; and (ii) at least one nonpolar acid-labile group, and (b) a photoacid generator (PAG) that may or may no...
|20130344443||LITHOGRAPHY APPARATUS, AND METHOD OF MANUFACTURE OF PRODUCT|
A lithography apparatus writes with a charged particle beam on a substrate scanned in a first direction. The apparatus includes a shielding device which individually shields a plurality of charged particle beams in first and second charged particle beam groups, a holder...
|20130337378||SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS|
A sulfonium salt comprising (a) a polymerizable substituent, (b) a sulfonium cation, and (c) a sulfonate anion within a common molecule is capable of generating a sulfonic acid in response to high-energy radiation or heat. A resist composition comprising the sulfonium s...
|20130330671||SURFACE SWITCHABLE PHOTORESIST|
Lithography methods on a semiconductor substrate are described. The methods include coating a resist layer on the substrate, wherein the resist layer comprises a resist polymer configured to turn soluble to a base solution in response to reaction with an acid, and a swi...
|20130330670||Electron Beam Lithography System and Method for Improving Throughput|
An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to t...
Nanosubstrates as biosensors, methods of making such nanosubstrates, and methods of using such nanosubstrates to detect biomarkers are described....
|20130323646||RESIST COMPOSITION AND PATTERNING PROCESS|
A polymer is obtained from copolymerization of a unit having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group with a hydroxyphenyl methacrylate unit having one acyl, acyloxy or alkoxycarbonyl group. The polymer is useful as a base resin in...
|20130323648||SMART SUBFIELD METHOD FOR E-BEAM LITHOGRAPHY|
The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pat...
|20130316289||Electron Beam Data Storage System and Method for High Volume Manufacturing|
The present disclosure provides for many different embodiments of a charged particle beam data storage system and method. In an example, a method includes dividing a design layout into a plurality of units; creating a lookup table that maps each of the plurality of unit...
There is herein described a method and apparatus for photoimaging. More particularly, there is described a method and apparatus for photoimaging a substrate (e.g. a web) covered with a wet curable photopolymer wherein a rotatable phototool is pressed and rotated against...
|20130316288||CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM PATTERN WRITING METHOD|
A apparatus, includes a unit to operate a number of other correction processing sections written before a relevant correction processing section, to ensure that a calculation time to calculate amounts of temperature rise for the all correction processing sections to doe...
|20130309606||RESIST COMPOSITION, PATTERNING PROCESS, MONOMER, AND COPOLYMER|
A polymer is obtained from copolymerization of a recurring unit having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group and a recurring unit having formula (1) wherein R1 is methyl, ethyl, propyl, methoxy, ethoxy or propoxy, R
|20130309608||METHOD AND SYSTEM FOR FORMING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES WITH DIFFERENT DOSAGES|
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each oth...
|20130309609||METHOD AND SYSTEM FOR FORMING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES WHICH EXPOSE DIFFERENT SURFACE AREA|
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different...
|20130309610||METHOD AND SYSTEM FOR FORMING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES|
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of exposure passes are used, and where the sum of the base dosa...
|20130302726||CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM USING THE COMPOSITION, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, PHOTOMASK AND POLYMER COMPOUND|
A chemical amplification resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by a group having a non-acid-decomposable polycyclic alicyclic hydrocarbon structure; and (B) a compound capabl...
|20130294972||ZERO-MODE WAVEGUIDE FOR SINGLE BIOMOLECULE FLUORESCENCE IMAGING|
The disclosed subject matter provides a zero-mode waveguide (ZMW) including a substrate and at least one nano-well thereon and having a bottom surface and a side wall comprising gold. A surface of the side wall is passivated with a first functional molecule comprising p...
|20130288181||DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE|
The present invention provides a drawing apparatus which performs drawing on a substrate with a charged particle beam, the apparatus comprising a correction device configured to correct drawing data for controlling the drawing, and a drawing device configured to perform...
|20130287881||IMPRINT MOLD FOR MANUFACTURING BIT-PATTERNED MEDIUM AND MANUFACTURING METHOD OF THE SAME|
There is provided an imprint mold for manufacturing a bit-patterned medium with an imprint method, wherein dot-shaped protrusions are formed on a main surface of a substrate, so as to be a base of a magnetic material region in the bit-patterned medium, with the dot-shap...
|20130288182||Electron Beam Processing With Condensed Ice|
In a method for imaging a solid state substrate, a vapor is condensed to an amorphous solid water condensate layer on a surface of a solid state substrate. Then an image of at least a portion of the substrate surface is produced by scanning an electron beam along the su...
|20130273474||Grid Refinement Method|
The present disclosure provides an embodiment of a method, for a lithography process for reducing a critical dimension (CD) by a factor n wherein n<1. The method includes providing a pattern generator having a first pixel size S1 to generate an alternating dat...
|20130252172||MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD|
A multi charged particle beam writing apparatus of the present invention includes an aperture member to form multiple beams, a plurality of first deflectors to respectively perform blanking deflection of a corresponding beam, a second deflector to collectively deflect t...
|20130236832||ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS|
There is disclosed an acid generator generating a sulfonic acid represented by the following general formula (1) in response to high-energy beam or heat:
As a result, there is provided a novel acid generator ...
|20130230805||DRAWING APPARATUS, REFERENCE MEMBER, AND METHOD OF MANUFACTURING ARTICLE|
A drawing apparatus includes a charged particle optical system, a first measurement device including an image taking optical system and configured to measure a position of a reference mark in a first direction, a second measurement device configured to measure a positio...
|20130230807||METHOD OF FABRICATING TRANSPARENT ANTI-REFLECTIVE ARTICLE|
A method of fabricating an anti-reflective optically transparent structure includes the steps of providing an optically transparent substrate having a first refractive index and a first surface; and forming an anti-reflective layer within the first surface of the transp...
|20130230806||LITHOGRAPHY APPARATUS, AND ARTICLE MANUFACTURING METHOD|
A lithography apparatus includes a deflector configured to deflect the charged particle beam to scan the charged particle beam on the substrate in a scan direction; a detector including a shield for shielding the charged particle beam, and configured to detect an intens...
|20130224662||CHARGED PARTICLE BEAM APPARATUS, DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE|
A charged particle beam apparatus, which processes an object with a charged particle beam, includes: a detector having a detection surface, and configured to detect a charged particle beam incident on a partial region of the detection surface; and a controller configure...
|20130224652||METAL PEROXO COMPOUNDS WITH ORGANIC CO-LIGANDS FOR ELECTRON BEAM, DEEP UV AND EXTREME UV PHOTORESIST APPLICATIONS|
Compositions are disclosed having the formula (3):
wherein x is an integer of 1 to 4, y is an...
|20130224657||ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS|
The present invention provides an acid generator generates a sulfonic acid represented by the following general formula (1) in response to high-energy beam or heat:
To provide a novel acid generator which is suitably used as an acid generat...