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| Application No. | Application Title | Issue Date |
| 20080118643 | Multilayer nitride-containing coatings This invention relates to erosion resistant coatings comprising at least 2 sublayer systems in which each sublayer system is separated from another by an interlayer, wherein (i) each sublayer system is the same or different and comprises at least 4 layers, (ii) said lay... | 05/22/2008 |
| 20080095939 | Method for Producing a Coat on a Piston Ring and Piston Ring The invention relates to a method for producing a coat on the outer peripheral surface of a piston ring base. According to said method, a plurality of layers is applied layer by layer to the peripheral surface by applying, using a PVD method, at least one metal adhesive... | 04/24/2008 |
| 20080092819 | SUBSTRATE SUPPORT STRUCTURE WITH RAPID TEMPERATURE CHANGE The present invention relates to semiconductor reaction chambers including a substrate support structure with rapid temperature change capabilities. The methods and components of the present invention may be used substrate deposition and related processes where varied t... | 04/24/2008 |
| 20080081127 | Organometallic compounds, processes for the preparation thereof and methods of use thereof This invention relates to organometallic compounds represented by the formula (L1)yM(L2)z-y wherein M is a Group 5 metal or a Group 6 metal, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L 04/03/2008 | |
| 20080081113 | NITROGEN PROFILE ENGINEERING IN NITRIDED HIGH DIELECTRIC CONSTANT FILMS A method of forming a nitrided high-k film by disposing a substrate in a process chamber and forming the nitrided high-k film on the substrate by a) depositing a nitrogen-containing film, and b) depositing an oxygen-containing film, wherein steps a) and b) are performed... | 04/03/2008 |
| 20080063798 | PRECURSORS AND HARDWARE FOR CVD AND ALD The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, t... | 03/13/2008 |
| 20080050522 | Preparative method for protective layer of susceptor A protective layer for a susceptor is prepared. The susceptor is a graphite block; and the protective layer consists of a titanium nitride film and a titanium carbide film. The susceptor with the protective layer is used in epitaxial growth and device process with life ... | 02/28/2008 |
| 20080038466 | TANTALUM AND NIOBIUM COMPOUNDS AND THEIR USE FOR CHEMICAL VAPOUR DEPOSITION (CVD) The present invention relates to special, novel tantalum and niobium compounds, the use thereof for the deposition of tantalum- or niobium-containing layers by means of chemical vapour deposition and the tantalum- or niobium-containing layers produced by this process. ... | 02/14/2008 |
| 20080038465 | Precursor For Film Formation And Method For Forming Ruthenium-Containing Film Precursor for ruthenium film deposition, comprising ruthenium tetroxide dissolved in at least one non-flammable solvent, preferably a fluorinated solvent having the general formula CxHyFzOtNu wherein: | 02/14/2008 |
| 20080014352 | SYSTEM AND METHOD FOR FORMING AN INTEGRATED BARRIER LAYER An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode depo... | 01/17/2008 |
| 20070243386 | Process for preparation of multi-thin layered structure Disclosed herein is a method of manufacturing multi-layered thin films having different physical properties on a base material using a plasma-enhanced chemical vapor deposition (PECVD) process. The method includes changing a plasma frequency to be applied, while not cha... | 10/18/2007 |
| 20070224392 | Transparent barrier sheet and production method of transparent barrier sheet A transparent barrier sheet comprising: (a) a substrate sheet having thereon a transparent primer layer; (b) a transparent inorganic thin layer; and (c) a transparent organic thin layer, wherein: the transparent inorganic thin layer comprises silicon nitride or silicon ... | 09/27/2007 |
| 20070160761 | Tungsten and molybdenum compounds and thier use for chemical vapour deposition (CVD) The present invention relates to specific novel tungsten and molybdenum compounds to the use thereof for the deposition of tungsten- or molybdenum-containing layers by means of chemical vapour deposition, and to the tungsten- or molybdenum-containing layers produced... | 07/12/2007 |
| 20070148497 | Coated cutting tool insert The present invention discloses a coated cutting tool insert particularly useful for dry and wet machining, preferably milling, in low and medium alloyed steels, stainless steels, with or without raw surface zones under severe conditions such as vibrations, long overhan... | 06/28/2007 |
| 20070141258 | METHODS OF GROWING NITRIDE-BASED FILM USING VARYING PULSES Nitride-based film is grown using multiple precursor fluxes. Each precursor flux is pulsed one or more times to add a desired element to the nitride-based film at a desired time. The quantity, duration, timing, and/or shape of the pulses is customized for each element t... | 06/21/2007 |
| 20070082132 | Method for forming metal wiring structure A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulati... | 04/12/2007 |
| 20060198958 | Methods for producing silicon nitride films by vapor-phase growth Methods for the production of silicon nitride films by vapor-phase growth. A hydrazine gas and at least one precursor gas are fed into a reaction chamber containing a substrate. The precursor gas is either a trisilylamine gas or a silylhydrazine gas. A silicone nitride ... | 09/07/2006 |
| 20060141155 | Atomic layer deposition using metal amidinates Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN′-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposite... | 06/29/2006 |
| 20050118336 | Method for the deposition of silicon nitride A process is described for depositing silicon nitride, in which the temperature in a furnace is set to from 600° C. to 645° C. The silicon nitride formed in this way is permeable to small molecules, such as in particular hydrogen molecules, yet nevertheless retains it... | 06/02/2005 |
| 20050100670 | Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition Silicon nitride film is formed on substrate (112) by feeding trisilylamine and ammonia into a CVD reaction chamber (11) that contains a substrate (112). The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or ... | 05/12/2005 |
| 20050098109 | Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method The precoat film forming method has the deposition step of feeding processing gas into the film forming device having the loading table structure 18 internally which has the loading table 16 for loading the article W to be processed and depositing the prec... | 05/12/2005 |
| 20050095443 | Plasma enhanced ALD of tantalum nitride and bilayer A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bi... | 05/05/2005 |
| 20050089634 | Method for depositing metallic nitride series thin film The present invention generally relates to a method for depositing a metallic nitride series thin film, typically a TiN-series thin film. The TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, O and N to have a higher barrier ch... | 04/28/2005 |
| 20050079290 | Tantalum amide complexes for depositing tantalum-containing films, and method of making same Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectro... | 04/14/2005 |
| 20050053722 | Method for forming a titanium nitride layer A method for forming a titanium nitride layer. A pre-heating step is performed, wherein a substrate is placed in a chamber comprising inert gas with a pre-heating pressure between 0.1˜3 torr. A TiN deposition step is then performed, wherein the substrate is placed in a... | 03/10/2005 |
