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...Daniel Webster invented a "bull plow" to pull out tree stumps. It didn't catch on because it was huge and required four oxen to pull it!
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| Application No. | Application Title | Issue Date |
| 20110259242 | Additives to Prevent Degradation of Cyclic Alkene Derivatives This disclosure relates to compositions that include (a) at least one substituted or unsubstituted cyclic alkene, and (b) an antioxidant composition including at least one compound of Formula (I): R1 | |
| 20110186464 | Process for manufacturing glass containers and product obtained therewith A process for manufacturing glass containers completely or partly treated with the chemical vapor deposition (CVD) technique, by which a layer of oxides of Si and/or B and/or Ti and/or Zr and/or Ta and/or Al and/or mixtures of one or more of said elements is deposited w... | 08/04/2011 |
| 20110159204 | OXYGEN RADICAL GENERATION FOR RADICAL-ENHANCED THIN FILM DEPOSITION A method of radical-enhanced atomic layer deposition (REALD) involves alternating exposure of a substrate to a first precursor gas and to radicals, such as monatomic oxygen radicals (O•), generated from an oxygen-containing second precursor gas, while maintaining spat... | 06/30/2011 |
| 20110070380 | SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may co... | 03/24/2011 |
| 20110052931 | Coated Cutting Tools Having a Platinum Group Metal Concentration Gradient and Related Processes The present disclosure is directed to cutting tools. The disclosed cutting tools may have a wear resistant coating on a substrate. The substrate may have hard particles cemented in a binder phase. The binder may have a near-surface concentration gradient of at least one... | 03/03/2011 |
| 20100304106 | GAS BARRIER LAMINATE FILM AND METHOD OF PRODUCING GAS BARRIER LAMINATE FILM A gas barrier laminate film including an organic compound layer and an oxide inorganic compound layer and having both excellent gas barrier properties and durability. The gas barrier laminate film comprises an organic compound layer, a silicon atom-containing compound l... | 12/02/2010 |
| 20100274176 | WOUND CARE SYSTEM AND BACTERICIDAL METHODS AND DEVICES A variety of article and systems including wound care systems, methods for making the wound care systems, bactericidal, and methods for treating wounds using these systems are disclosed. The wound care systems may include a first material comprising one or more fibers o... | 10/28/2010 |
| 20100221428 | METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND/OR SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION Pentakis(dimethylamino) disilane comprising compound is used along with a nitrogen containing gas and optionally an oxygen containing gas for SiN (and optionally SiON) film deposition by CVD.... | 09/02/2010 |
| 20100129994 | Method for forming a film on a substrate A method for forming a film on a substrate comprising: heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the... | 05/27/2010 |
| 20100068894 | COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precurso... | 03/18/2010 |
| 20090324930 | PROTECTIVE COATINGS FOR SILICON BASED SUBSTRATES WITH IMPROVED ADHESION An environmental coating system for silicon based substrates wherein a porous intermediate barrier layer having an elastic modulus of about 30 to 150 GPa is provided between a silicon metal containing bondcoat and a ceramic top environmental barrier layer.... | 12/31/2009 |
| 20090297711 | Process Stability of NBDE Using Substituted Phenol Stabilizers A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I),
| 12/03/2009 |
| 20090035463 | THERMAL PROCESSING SYSTEM AND METHOD FOR FORMING AN OXIDE LAYER ON SUBSTRATES Thermal processing system and method for forming an oxide layer on substrates. The thermal processing system has a gas injector with first and second fluid lumens confining first and second process gases, such an molecular hydrogen and molecular oxygen, from each other ... | 02/05/2009 |
| 20080299313 | Film forming apparatus and film forming method A film forming apparatus that forms a film on an inner wall of a tubular body by a chemical vapor deposition method is provided. The film forming apparatus includes: a source material storage section; a process gas generation section that forms process gas containing so... | 12/04/2008 |
| 20080299288 | Durable, heat-resistant multi-layer coatings and coated articles A method of providing a durable protective coating structure which comprises at least three layers, and which is stable at temperatures in excess of 400° C., where the method includes vapor depositing a first layer deposited on a substrate, wherein the first layer is a... | 12/04/2008 |
| 20080292811 | CHAMBER IDLE PROCESS FOR IMPROVED REPEATABILITY OF FILMS Methods and apparatus for improving the substrate-to-substrate uniformity of silicon-containing films deposited by vapor deposition of precursors vaporized from a liquid source on substrates in a chamber are provided. The methods include exposing a chamber to a processi... | 11/27/2008 |
| 20080268153 | Thin-film forming apparatus and thin-film forming method A thin-film forming method of this invention forms a thin film on a wafer. This method is capable of improving the quality yield of wafers. The thin-film forming method includes the step of suctioning a flow of a film-forming gas from both sides of a conveyance path whi... | 10/30/2008 |
| 20080254232 | COBALT NITRIDE LAYERS FOR COPPER INTERCONNECTS AND METHODS FOR FORMING THEM An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or ta... | 10/16/2008 |
| 20080242111 | Atomic layer deposition of strontium oxide via n-propyltetramethyl cyclopentadiendyl precursor A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material... | 10/02/2008 |
| 20080241384 | LATERAL FLOW DEPOSITION APPARATUS AND METHOD OF DEPOSITING FILM BY USING THE APPARATUS A deposition apparatus and deposition method for forming a film on a substrate are disclosed. A film is deposited on a substrate by exposing the substrate to different flow directions of reactant gases. In one embodiment, the substrate is rotated in the reaction chamber... | 10/02/2008 |
