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| Application No. | Application Title | Issue Date |
| 20100322378 | X-RAY ABLATION OF HYALURONAN HYDROGELS Disclosed is a method for ablating hyaluronan-based hydrogels with X-rays, the method comprising the steps of: (a) preparing hyaluronan-based hydrogels; and (b) performing X-ray irradiation to the hyaluronan-based hydrogels to induce a degradation of the hyaluronan-base... | 12/23/2010 |
| 20100067653 | OPTICAL ELEMENT FOR RADIATION IN THE EUV AND/OR SOFT X-RAY REGION AND AN OPTICAL SYSTEM WITH AT LEAST ONE OPTICAL ELEMENT An optical element, especially a normal-incidence collector mirror, for radiation in the EUV and/or soft X-ray region of wavelengths is described. The element has a substrate, a multilayer coating with an optically active region, and a capacitor, having a first and a se... | 03/18/2010 |
| 20090233239 | Reticle for Use in a Semiconductor Lithographic System and Method for Modifying the Same A reticle for use in a semiconductor lithographic system includes at least two separated reticle parts. Each part includes a pattern to be transferred lithographically to a substrate. At least one of the two separated reticle parts is independently replaceable.... | 09/17/2009 |
| 20090130569 | Adjustable Mask Blank Structure for an Euv Phase-Shift Mask The invention concerns a process for forming an optical component comprising:
| 05/21/2009 |
| 20080233512 | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method A liquid recovery system is used by an immersion exposure apparatus. The liquid recovery system comprises: a plate that has a first surface and a second surface on the side opposite the first surface; and a liquid recovery part, at least part of which opposes the second... | 09/25/2008 |
| 20080235651 | Method and apparatus for determining an optical model that models the effects of optical proximity correction One embodiment provides a system that can enable a designer to determine the effects of subsequent processes at design time. During operation, the system may receive a test layout and an optical model that models an optical system, but which does not model the effects o... | 09/25/2008 |
| 20080116397 | Stencil design and method for cell projection particle beam lithography A method and system for particle beam lithography, such as electron beam (EB) lithography, is disclosed. The method and system include selecting one of a plurality of cell patterns from a stencil mask and partially exposing the cell pattern to a particle beam, such as a... | 05/22/2008 |
| 20080032206 | Photomask registration errors of which have been corrected and method of correcting registration errors of photomask Provided are photomask registration errors of which have been corrected and a method of correcting the registration errors of a photomask. The photomask includes a photomask substrate, an optical pattern formed on one surface of the photomask substrate, and a plurality ... | 02/07/2008 |
| 20070287076 | MULTILAYER MIRROR, EVALUATION METHOD, EXPOSURE APPARATUS, DEVICE MANUFACTURING METHOD A multilayer mirror used for EUV light includes a substrate, a reflection layer for reflecting the EUV light, a stress compensation layer, formed between the substrate and the reflection layer, for compensating a deformation of the substrate by the reflection layer, whe... | 12/13/2007 |
| 20070275308 | Reflective mask blank, reflective mask, and method of manufacturing semiconductor device A reflective mask blank and a reflective mask each have, on a multilayer reflective film, a protective film that protects the multilayer reflective film from etching during pattern formation of an absorber layer or a buffer layer formed on the protective film. The prote... | 11/29/2007 |
| 20070259275 | Anti-reflection coating for an EUV mask An EUV mask includes, on top of a multi-layer mirror, a spectral purity enhancement layer, for application in an EUV lithographic apparatus. On top of the spectral purity enhancement layer, a patterned absorber layer is provided. The spectral purity enhancement layer in... | 11/08/2007 |
| 20070238033 | Reflection type photomask blank, reflection type photomask, and method of manufacturing semiconductor device using the same In a reflection type photomask blank having a multilayer reflection film and a light absorption laminated layer laminated on a substrate, the light absorption laminated layer is composed by laminating a second light absorption layer having DUV light absorbing capacity a... | 10/11/2007 |
| 20070224523 | Reflective photomask, method of fabricating the same, and reflective blank photomask The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the subst... | 09/27/2007 |
| 20070224522 | Substrate including deformed portions and method of adjusting a curvature of a substrate Adjusting a curvature of a substrate includes forming at least one deformed portion in a predetermined region of a substrate, wherein the substrate includes a curved region before forming the at least one deformed portion, and forming the at least one deformed portion i... | 09/27/2007 |
| 20070178393 | Reflective photomask and method of fabricating the same A reflective photomask for EUV light is disclosed. The reflective photomask may include a projecting pattern selectively formed on a substrate and a reflective layer on the substrate and the projecting pattern.... | 08/02/2007 |
| 20070162887 | Method of fabricating photo mask Provided is a method of fabricating a photo mask. The method includes preparing a model group including optical proximity correction (OPC) models and generating a preliminary mask layout using an integrated circuit (IC) layout. A contour image may be produced from the p... | 07/12/2007 |
| 20070160916 | Reflective-type mask blank for EUV lithography There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating e... | 07/12/2007 |
| 20070148559 | Phase shift mask and method for fabricating the same A phase shift mask and a method for fabricating the same are provided. The phase shift mask includes: a substrate; a multiple thin layer structure formed over the substrate, the multiple thin layer structure including an opening formed to a predetermined depth; and an a... | 06/28/2007 |
| 20070128528 | Mask blank and photomask having antireflective properties The present invention relates to mask blanks with anti reflective coatings comprising at least two sublayers. Such bilayer or multilayer anti reflective coatings are advantageous for binary and phase shift mask blanks for use in lithography for an exposure wavelength of... | 06/07/2007 |
| 20070101303 | Method and apparatus for integrated circuit layout optimization A method and apparatus for integrated circuit layout optimization are provided. In the conventional art, the major challenges in building integrated circuits (IC) at sub-wavelength geometries include i) to ensure the design intent is faithfully transferred onto silicon;... | 05/03/2007 |
| 20070101310 | Model of sensitivity of a simulated layout to a change in original layout, and use of model in proximity correction A memory is encoded with a model of sensitivity of a distorted layout generated by simulation of a wafer fabrication process, with respect to a change in an original layout that is input to the simulation. The sensitivity model comprises an expression of convolution of ... | 05/03/2007 |
| 20070082272 | Masks, lithography device and semiconductor component The invention relates to masks comprising a multilayer coating of a specified period thickness distribution such as those used in lithography devices for producing semiconductor components. One problem of projection optics concerns pupil apodization which leads to imagi... | 04/12/2007 |
| 20070082273 | Photomask and image device manufacturing method In a photomask formed with a device pattern made of a light-shielding film pattern in a transfer area on a front surface of an optically transparent substrate, the photomask includes a non-device pattern such as a product identification pattern composed of a light-shiel... | 04/12/2007 |
| 20070082278 | Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for tr... | 04/12/2007 |
| 20070074144 | Method and system for selective optical pattern compensation A method and system for making a photographic mask. The method includes determining a first contact area, processing information associated with the first contact area, and determining whether a first optical compensation should be applied to the first contact area base... | 03/29/2007 |
| 20070074143 | Dense OPC A method of calculating process conditions for performing optical and process correction (OPC) or other resolution enhancement techniques on a layout design. Process conditions are estimated on a layout database on a substantially uniform grid. Contour curves are create... | 03/29/2007 |
| 20070065732 | Photomask providing uniform critical dimension on semiconductor device and method of manufacturing the same An approach to correcting non-uniformity of critical dimension (CD) in a semiconductor wafer includes measuring 0th-order light transmitted through or reflected from a photomask in a plurality of regions of the photomask. The photomask is altered to equalize ... | 03/22/2007 |
| 20070067752 | Method for verifying optical proximity correction using layer versus layer comparison A method for verifying optical proximity correction (OPC) using a layer-versus-layer (LVL) comparison. The method includes performing optical proximity correction of an original design of a semiconductor device to prepare a revised design of the semiconductor device; co... | 03/22/2007 |
| 20070061772 | SYSTEM AND METHOD FOR MASK VERIFICATION USING AN INDIVIDUAL MASK ERROR MODEL Methods and systems are disclosed to inspect a manufactured lithographic mask, to extract physical mask data from mask inspection data, to determine systematic mask error data based on differences between the physical mask data and mask layout data, to generate systemat... | 03/15/2007 |
| 20070061773 | METHOD FOR SELECTING AND OPTIMIZING EXPOSURE TOOL USING AN INDIVIDUAL MASK ERROR MODEL Methods are disclosed for selecting and optimizing an exposure tool using an individual mask error model. In one embodiment, a method includes selecting a model of a lithography process including an optical model of an exposure tool and a resist model, creating an indiv... | 03/15/2007 |
| 20070054203 | Mask, method of producing mask, and method of producing semiconductor device To provide a mask able to prevent a drop in pattern position accuracy due to the influence of internal stress of a membrane and able to align patterns including complementary divided patterns precisely, a method of producing the same, and a method of producing a semicon... | 03/08/2007 |
| 20070054202 | Mask, method of producing mask, and method of producing semiconductor device To provide a mask able to prevent a drop in pattern position accuracy due to the influence of internal stress of a membrane and able to align patterns including complementary divided patterns precisely, a method of producing the same, and a method of producing a semicon... | 03/08/2007 |
| 20070048631 | Mask defect repairing method and semiconductor device manufacturing method According to an aspect of the invention, there is provided a mask defect repairing method of repairing a defect caused by a foreign object on a light transmissive photomask, the method including moving the foreign object on a light transmission section of the light tran... | 03/01/2007 |
| 20070031741 | EUVL reflection device, method of fabricating the same, and mask, projection optics system and EUVL apparatus using the EUVL reflection device A reflection device that may include a substrate and a multi-reflection layer formed on the substrate. The multi-reflection layer may be formed of a material capable of reflecting EUV rays. The multi-reflection layer may be formed by stacking a plurality of layer groups... | 02/08/2007 |
| 20070026323 | Mask with minimum reflectivity over absorber layer A reflective mask may include an anti-reflective (AR) coating on an absorber layer to improve inspection contrast in an inspection system using deep ultraviolet (DUV) light. A silicon nitride (Si3N4) AR coating may be used on a chromium (Cr) or tan... | 02/01/2007 |
| 20070022401 | METHOD OF CORRECTING MASK PATTERN AND CORRECTING APPARATUS THEREOF A method of correcting a mask pattern is provided. First, an original writer drawing data of a circuit layout pattern is inputted. Then, according to the original writer drawing data, a correcting writer rule is selected by searching from a look-up table. According to t... | 01/25/2007 |
| 20070022402 | System and method for lithography simulation There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or sy... | 01/25/2007 |
| 20070011648 | Fast systems and methods for calculating electromagnetic fields near photomasks Photomask patterns are represented using contours defined by mask functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit... | 01/11/2007 |
| 20060292457 | System for electrically connecting a mask to earth, a mask A reticle includes an area provided with a conductive metal-based compound coating for electrically grounding the reticle. The reticle is suitable for use with a lithography apparatus whereby the reticle pattern is imaged using extreme ultra violet radiation. One or mor... | 12/28/2006 |
| 20060292459 | EUV reflection mask and method for producing it An EUV mask having elevated sections and trenches lying in between is disclosed. In one embodiment, the mask includes at least a substrate layer having a very low coefficient of thermal expansion, a multilayer, and a capping layer. The elevated sections of the EUV mask ... | 12/28/2006 |
