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| Application No. | Application Title | Issue Date |
| 20110044425 | SPECTRAL PURITY FILTERS FOR USE IN A LITHOGRAPHIC APPARATUS A spectral purity filter includes a plurality of apertures extending through a member. The apertures are arranged to suppress a first wavelength of radiation and to allow at least a portion of a second wavelength of radiation to be transmitted through the apertures. The... | 02/24/2011 |
| 20110033025 | APPARATUS FOR MEASURING AERIAL IMAGE OF EUV MASK An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a port... | 02/10/2011 |
| 20100322378 | X-RAY ABLATION OF HYALURONAN HYDROGELS Disclosed is a method for ablating hyaluronan-based hydrogels with X-rays, the method comprising the steps of: (a) preparing hyaluronan-based hydrogels; and (b) performing X-ray irradiation to the hyaluronan-based hydrogels to induce a degradation of the hyaluronan-base... | 12/23/2010 |
| 20100303199 | GRAZING INCIDENCE COLLECTOR FOR LASER PRODUCED PLASMA SOURCES Grazing incidence collectors (GICs) for extreme ultraviolet (EUV) and X-ray radiation sources, such as laser produced plasma (LPP) sources, are disclosed. Source-collector systems comprising GICs and LPP sources are also disclosed. A laser beam is directed along the col... | 12/02/2010 |
| 20100284511 | Zone-optimized mirrors and optical systems using same A zone-optimized mirror (MZ) for reflecting extreme ultraviolet (EUV) or X-ray radiation (18) includes a reflective surface (S) having two or more substantially discrete zones (Z1, Z2, . . . Zn) that include respective coatings (C1, C2, | 11/11/2010 |
| 20100265481 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE INSTALLATION An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors a... | 10/21/2010 |
| 20100092113 | STATIC PRESSURE SLIDER AND TRANSFERRING DEVICE AND PROCESSING DEVICE PROVIDED WITH THE SAME The present invention relates to a static pressure slider including a stationary member 2, and a movable member 3 configured to be movable relative to the stationary member 2 under a condition that a static pressure fluid layer is provided between t... | 04/15/2010 |
| 20100091941 | MULTI-REFLECTION OPTICAL SYSTEMS AND THEIR FABRICATION A reflective optical system, in which radiation from a radiation source is directed to an image focus or intermediate focus, including one or more mirrors (symmetric about the optical axis). Each mirror has at least first and second reflective surfaces, whereby radiatio... | 04/15/2010 |
| 20100044212 | VERTICALLY STANDING IONIC POLYMER-METAL COMPOSITE A vertically standing IPMC includes a substrate, a first electrode positioned substantially vertical with respect to an upper surface of the substrate, a second electrode positioned substantially vertical with respect to the upper surface of the substrate and disposed o... | 02/25/2010 |
| 20090323044 | CATOPTRIC ILLUMINATION SYSTEM FOR MICROLITHOGRAPHY TOOL In general, in one aspect, the invention features a system that includes an illumination system of a microlithography tool, the illumination system including a first component having a plurality of elements. During operation of the system, the elements direct radiation ... | 12/31/2009 |
| 20090309048 | Radiation System and Lithographic Apparatus Comprising the Same An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or con... | 12/17/2009 |
| 20090154642 | System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus A gas flow management system may comprise a first and second enclosing walls at least partially surrounding first and second respective spaces; a system generating plasma in the first space, the plasma emitting extreme ultraviolet light; an elongated body restricting fl... | 06/18/2009 |
| 20090041182 | ILLUMINATION SYSTEM FOR EUV LITHOGRAPHY The disclosure relates to an illumination system for EUV lithography, as well as related elements, systems and methods. In some embodiments, an illumination system includes a first optical element and a second optical element. The first optical element can include a plu... | 02/12/2009 |
| 20080298542 | Image Producing Methods and Image Producing Devices The invention relates to microlithography and can be used, for instance for producing integrated circuits or structures having a sub-micron resolution. An image is produced with the aid of the stepped displacement, including continuous displacement of the radiator matri... | 12/04/2008 |
| 20080285713 | EXPOSURE APPARATUS An EUV exposure apparatus is configured to maintain the reflective index of the optical element as high as possible and to minimize the maintenance frequency of the optical element by restraining attachments of released gas particles by degasifying to the optical elemen... | 11/20/2008 |
| 20080175349 | MASKLESS EUV PROJECTION OPTICS Various embodiments provide projection optics comprise a plurality of mirrors that provide high demagnification of, for example, about one hundred times or more. The projection optics may be used for photolithography processes, such as extreme ultraviolet lithography pr... | 07/24/2008 |
| 20080175348 | NANOMETER-SCALE LITHOGRAPHY USING EXTREME ULTRAVIOLET/SOFT X-RAY LASER INTERFEROMETRY Direct patterning of nanometer scale features by interferometric lithography using a 46.9 nm laser is described. Multiple exposures using a Lloyd's mirror interferometer permitted printing of arrays having 60 nm FWHM features.... | 07/24/2008 |
| 20080165925 | DOUBLE-FACETTED ILLUMINATION SYSTEM WITH ATTENUATOR ELEMENTS ON THE PUPIL FACET MIRROR The invention relates to an illumination system with a light source emitting radiation with a wavelength ≦193 nm, especially radiation in the EUV wavelength range. The invention comprises a first facetted optical element in a first plane with at least a first and seco... | 07/10/2008 |
| 20080159471 | Debris mitigation system and lithographic apparatus A debris mitigation system for trapping debris coming from a tin debris-generating radiation source is provided. The debris mitigating system includes a debris barrier comprising a plurality of foils, and a cleaning system constructed and arranged to clean the foils. Th... | 07/03/2008 |
| 20080143001 | Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system A conduit system for a lithographic apparatus is disclosed, the conduit system including a conduit configured to guide a liquid or liquid-gas mixture, and a gas injection nozzle configured to introduce a gas in the liquid or liquid-gas mixture to at least partially abso... | 06/19/2008 |
| 20080143981 | OPTICAL ARRANGEMENT AND EUV LITHOGRAPHY DEVICE WITH AT LEAST ONE HEATED OPTICAL ELEMENT, OPERATING METHODS, AND METHODS FOR CLEANING AS WELL AS FOR PROVIDING AN OPTICAL ELEMENT An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or... | 06/19/2008 |
| 20080123807 | ILLUMINATION OPTICS FOR PROJECTION MICROLITHOGRAPHY Illumination optics that can be used, for example, for EUV projection microlithography are disclosed. Also disclosed are illumination systems provided with such illumination optics, projection exposure apparatuses provided with such illumination systems, related methods... | 05/29/2008 |
| 20080116397 | Stencil design and method for cell projection particle beam lithography A method and system for particle beam lithography, such as electron beam (EB) lithography, is disclosed. The method and system include selecting one of a plurality of cell patterns from a stencil mask and partially exposing the cell pattern to a particle beam, such as a... | 05/22/2008 |
| 20080116398 | Method and system for proximity effect and dose correction for a particle beam writing device A method of particle beam lithography includes selecting at least two cell patterns from a stencil, correcting proximity effect by dose control and by pattern modification for the at least two cell patterns, and writing the at least cell two patterns by one shot of the ... | 05/22/2008 |
| 20080089470 | Alignment for contact lithography A contact lithography system includes a patterning tool for transferring a pattern to a substrate; and a capacitive alignment system disposed on the patterning tool for cooperating with a corresponding alignment system disposed on the substrate for determining relative ... | 04/17/2008 |
| 20080083885 | Lithographic apparatus, and device manufacturing method A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emi... | 04/10/2008 |
| 20080036304 | High performance focusing actuator of a voice coil motor A high performance focusing actuator of a voice coil motor comprises a retaining unit having a plastic retaining frame; a center portion of the plastic retaining frame being a receiving space; two opposite corners of the receiving space being chamfered; an inner side of... | 02/14/2008 |
| 20080013680 | Collector configured of mirror shells There is provided a collector. The collector includes a first mirror shell positioned inside a second mirror shell that has a chamfered end. ... | 01/17/2008 |
| 20080013679 | Marking apparatus used in a process for producing multi-layered printed circuit board X-rays are irradiated at the board 5 from the X-ray generator 11, the image of the standard marks 50, 51 are projected on the fluorescence screen 12, the resulted image is photographed simultaneously by one shot of the visible light CCD camer... | 01/17/2008 |
| 20070242799 | Illumination system There is provided an illumination system. The illumination system includes (a) a mirror, (b) a diaphragm in a light path downstream of the mirror, and (c) a field plane in the light path, downstream of the diaphragm. ... | 10/18/2007 |
| 20070211850 | Cleaning of Multi-Layer Mirrors A method of controlling carbonaceous contamination of the surface of a mirror coated with a metal layer comprises the steps of supplying to the mirror a source of carbon for forming carbonaceous deposits on the mirror surface, and a source of a reactant for reacting wit... | 09/13/2007 |
| 20070110213 | Lithographic apparatus A barrier member is disclosed for use in immersion lithography. The barrier member comprises an extractor assembly on a bottom surface configured to face the substrate. The extractor assembly includes a plate configured to split the space between a liquid removal device... | 05/17/2007 |
| 20070076843 | METHOD FOR ADJUSTING GAP BETWEEN TWO OBJECTS AND EXPOSURE METHOD USING THE SAME, GAP ADJUSTING APPARATUS, AND EXPOSURE APPARATUS A method of making a gap between first and second objects have a predetermined value includes steps of introducing light to an entry window on the first object, detecting an intensity of light from an exit window on the first object, and positioning the second object, w... | 04/05/2007 |
| 20070030948 | Illumination system with field mirrors for producing uniform scanning energy This invention relates to an illumination system for scanning lithography especially for wavelengths ≦193 nm, particularly EUV lithography, for the illumination of a slit, comprising at least one field mirror or at least one field lens and being characterized in that ... | 02/08/2007 |
| 20070030464 | Lithographic apparatus and device manufacturing method A gas knife configured to dry a surface in an immersion lithographic apparatus is optimized to remove liquid by ensuring that a pressure gradient is built up in the liquid film on the surface being dried. ... | 02/08/2007 |
| 20060245540 | Illumination system particularly for microlithography There is provided an illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength ≦193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an ... | 11/02/2006 |
| 20060233300 | ILLUMINATION SYSTEM PARTICULARLY FOR MICROLITHOGRAPHY The invention concerns an illumination system, particularly for mircolithography with wavelengths<193 nm, comprising: a primary light source; a first optical component; a second optical component; an image plane; and an exit pupil; wherein said first optical component t... | 10/19/2006 |
| 20060193432 | Method for adjusting gap between two objects and exposure method using the same, gap adjusting apparatus, and exposure apparatus A method of making a gap between first and second objects have a predetermined value includes steps of introducing light to an entry window on the first object, detecting an intensity of light from an exit window on the first object, and positioning the second object, w... | 08/31/2006 |
| 20060133574 | Extreme ultraviolet light source and extreme ultraviolet light source target An object of the present invention is to provide an extreme ultraviolet light source target which can emits extreme ultraviolet light with high emission efficiency. A solid target made of heavy metal or heavy-metal compound and having a density 0.5 to 80% that of the cr... | 06/22/2006 |
| 20060104413 | Mask repeater and mask manufacturing method A mask repeater for transferring the pattern of a master mask onto a real mask by exposure and transferring the pattern on the real mask onto a substrate such as a semiconductor wafer. The size of the master mask is larger than that of the real mask. By using an optical... | 05/18/2006 |
